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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD40020EL_GE3

Name: SQD40020EL_GE3
Brand: Vishay Siliconix
SKU: SQD40020EL_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD40020EL_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD40020EL_GE3.pdf

Description:: MOSFET N-CH 40V 100A TO252AA

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Product details

Overview

SQD40020EL from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-252 package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.2 mΩ R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, DC-DC converters, and high-current motor drive stages.

For engineers reviewing the SQD40020EL datasheet, SQD40020EL pinout, SQD40020EL application, or SQD40020EL equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (2.7 mΩ), 108 nC total gate charge, 1.4 °C/W junction-to-case thermal resistance, and robust UIS/avalanche capability (E_AS = 105.8 mJ).

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables compatibility with standard logic-level and microcontroller GPIO drivers, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features 100 % R_g and UIS testing per production lot, and its thermal design leverages the TO-252's exposed drain tab for direct PCB copper thermal spreading. Junction-to-ambient resistance is 50 °C/W on a 1"² FR4 board - significantly improved when using extended copper pour or thermal vias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V battery rail protection and switching
R_DS(on) @ V_GS = 10 V	2.2 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages
R_DS(on) @ V_GS = 4.5 V	2.7 mΩ - Ensures robust operation with 3.3 V or 5 V logic-level gate drivers
I_D (continuous, T_C = 25 °C)	100 A - Supports high-current loads such as starter relays, HVAC blowers, and solenoid drivers
E_AS	105.8 mJ - Confirmed single-pulse avalanche energy rating for inductive load switching reliability
T_J operating range	−55 to +175 °C - Validated for under-hood automotive environments without derating
Q_g	108 nC - Determines gate driver power requirement and switching speed in hard-switched applications

Pinout & Package

TO-252 (DPAK) package with exposed drain tab thermally and electrically connected to the drain terminal. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab must be soldered to large copper area for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input; requires ≤ ±20 V gate-source voltage; 1.83 Ω typical gate resistance affects drive loop stability
D	Drain	Main high-side or low-side switching node; connected directly to exposed metal tab for thermal and electrical conduction
S	Source	Reference node for gate drive; source terminal and substrate tied internally; forms return path for load current

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) and high cell density in TO-252 footprint without sacrificing ruggedness
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and ESD testing per stress test plan
100 % R_g and UIS tested	Ensures gate resistance consistency and unclamped inductive switching robustness across every production lot
Low R_thJC (1.4 °C/W)	Allows >90 % of heat to transfer from junction to heatsink via drain tab - critical for compact power modules
Body diode t_rr = 43 ns (typ)	Reduces switching losses and voltage overshoot during freewheeling in synchronous rectifier configurations

Applications

Engine Control Unit (ECU) Load Switching	Automotive DC-DC Converter Primary Switch
Use Scenario: High-side switching of fuel injectors, ignition coils, and solenoids in modern gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V loads with precise timing and current limiting. Use Value: 175 °C operation ensures reliability near hot engine blocks; 2.2 mΩ R_DS(on) minimizes I²R heating during long dwell times.	Use Scenario: Primary-side high-frequency switching in 12 V → 5 V/3.3 V buck converters for ADAS sensors and infotainment. IC Role / Device Role / Timing Role: Main power transistor in hard-switched synchronous buck topology operating at 200–500 kHz. Use Value: Low Q_g (108 nC) and fast switching (t_r/t_f ≤ 20/40 ns) reduce switching losses; 4.5 V drive supports controller IC compatibility.
Electric Power Steering (EPS) Motor Driver	Commercial Vehicle HVAC Blower Control
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motors (24 V nominal). IC Role / Device Role / Timing Role: Low-side or high-side switch handling peak currents >80 A with PWM commutation. Use Value: Avalanche-rated (IAS = 46 A) withstands inductive kickback during fault conditions; TO-252 thermal performance sustains 150 °C ambient.	Use Scenario: Direct-drive PWM control of high-power HVAC blower motors in trucks and buses (24 V systems). IC Role / Device Role / Timing Role: Single-ended switch modulating motor speed via duty-cycle control. Use Value: 100 A continuous rating handles startup surges; low R_DS(on) reduces thermal stress during prolonged full-speed operation.

Engine Control Unit (ECU) Load Switching

Automotive DC-DC Converter Primary Switch

Use Scenario: High-side switching of fuel injectors, ignition coils, and solenoids in modern gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V loads with precise timing and current limiting.

Use Value: 175 °C operation ensures reliability near hot engine blocks; 2.2 mΩ R_DS(on) minimizes I²R heating during long dwell times.

Use Scenario: Primary-side high-frequency switching in 12 V → 5 V/3.3 V buck converters for ADAS sensors and infotainment.

IC Role / Device Role / Timing Role: Main power transistor in hard-switched synchronous buck topology operating at 200–500 kHz.

Use Value: Low Q_g (108 nC) and fast switching (t_r/t_f ≤ 20/40 ns) reduce switching losses; 4.5 V drive supports controller IC compatibility.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle HVAC Blower Control

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motors (24 V nominal).

IC Role / Device Role / Timing Role: Low-side or high-side switch handling peak currents >80 A with PWM commutation.

Use Value: Avalanche-rated (IAS = 46 A) withstands inductive kickback during fault conditions; TO-252 thermal performance sustains 150 °C ambient.

Use Scenario: Direct-drive PWM control of high-power HVAC blower motors in trucks and buses (24 V systems).

IC Role / Device Role / Timing Role: Single-ended switch modulating motor speed via duty-cycle control.

Use Value: 100 A continuous rating handles startup surges; low R_DS(on) reduces thermal stress during prolonged full-speed operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 0.95 mΩ @ 10 V, PowerFLAT 5x6 package; higher current but larger footprint and no AEC-Q101 documentation publicly available	Requires PCB redesign due to different package and thermal pad layout; better for space-constrained but non-automotive designs	Select when higher current headroom is needed and AEC-Q101 is not mandatory
IRL40B216TRPBF	40 V, 120 A, 2.1 mΩ @ 10 V, TO-263 package; AEC-Q101 qualified, but R_thJC = 1.0 °C/W and larger outline than TO-252	Compatible thermal interface but needs larger board area; higher cost and longer lead time than SQD40020EL	Select when lower thermal resistance is prioritized over board space and cost

Compared with STL220N4F7AG and IRL40B216TRPBF, the SQD40020EL offers optimal balance of AEC-Q101 compliance, TO-252 board-area efficiency, 2.2 mΩ conduction loss at 10 V, and proven 175 °C operation - making it preferred for volume automotive power switching where qualification, size, and thermal management are jointly constrained.

Availability

SQD40020EL is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQD40020EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQD40020EL belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability 12 V/24 V power switching in harsh under-hood environments.

FAQ

What is the maximum continuous drain current rating for SQD40020EL at 125 °C case temperature?

The SQD40020EL supports 90 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation in high-ambient automotive zones. The SQD40020EL maintains stable R_DS(on) performance up to 175 °C junction temperature, enabling reliable use even with elevated case temperatures.

Is SQD40020EL suitable for 4.5 V gate drive applications?

Yes, the SQD40020EL is fully characterized at V_GS = 4.5 V, delivering 2.7 mΩ R_DS(on) at 15 A - confirming strong enhancement-mode behavior and compatibility with 3.3 V and 5 V microcontrollers. Its gate threshold voltage (1.2–2.2 V) ensures turn-on margin well below 4.5 V, and the SQD40020EL's low Q_g (108 nC) minimizes driver power requirements in logic-level systems.

Does SQD40020EL have an integrated body diode, and what are its key parameters?

Yes, the SQD40020EL includes a monolithic body diode with forward voltage V_SD = 0.8–1.5 V at I_F = 25 A and reverse recovery time t_rr = 43–90 ns. Its Q_rr is 31–65 nC, supporting efficient freewheeling in buck and half-bridge circuits. These values are measured at V_GS = 0 V and are integral to the SQD40020EL's performance in synchronous rectification and inductive load switching.

What thermal resistance values apply to SQD40020EL in standard PCB mounting?

The SQD40020EL has R_thJC = 1.4 °C/W (junction-to-case, drain tab) and R_thJA = 50 °C/W (junction-to-ambient on 1"² FR4 board with 2 oz copper). These values are measured per JEDEC standards and define thermal design boundaries: R_thJC guides heatsink interface design, while R_thJA sets baseline for natural convection cooling. The SQD40020EL's low R_thJC makes it especially effective when paired with internal PCB copper pours or external heatsinks.

Is SQD40020EL AEC-Q101 qualified, and what does that cover?

Yes, the SQD40020EL is AEC-Q101 qualified per the manufacturer's documentation (Vishay S19-0005-Rev. A). This qualification covers stress tests including HTGB, HTRB, TC, UHAST, and mechanical shock - validating reliability for automotive electronic modules. The SQD40020EL's qualification applies specifically to the TO-252 packaged device, and all test data are reported in Vishay's official AEC-Q101 summary for this part number.

SQD40020EL_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 20 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD40020EL_GE3 FAQ

1.How can I place an order for SQD40020EL_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD40020EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD40020EL_GE3 reliable?

The price and inventory of SQD40020EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40020EL_GE3 is usually 5 days.

3.What payment methods are accepted for SQD40020EL_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40020EL_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD40020EL_GE3?

SQD40020EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD40020EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD40020EL_GE3?

For technical support, including SQD40020EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40020EL_GE3 requirements.

6.How does Aetrix verify that SQD40020EL_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD40020EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40020EL_GE3 meets industry standards.

7.What is the process for return or replacement of SQD40020EL_GE3?

All SQD40020EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40020EL_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD40020EL_GE3 part is unused and in its original packaging.

Return procedure for SQD40020EL_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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