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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD40030E_GE3

Name: SQD40030E_GE3
Brand: Vishay Siliconix
SKU: SQD40030E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD40030E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD40030E_GE3.pdf

Description:: MOSFET N-CHANNEL 40V TO252AA

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Product details

Overview

SQD40030E_GE3 from Vishay is an AEC-Q101-qualified single N-channel automotive MOSFET in PowerPAK® SO-8L package, rated for 40 V V_DS, 0.0046 Ω R_DS(on) at V_GS = 10 V, and 72 nC gate charge. It delivers low FOM for high-efficiency synchronous buck converters in engine control units and ADAS power stages.

For engineers reviewing the SQD40030E_GE3 datasheet, SQD40030E_GE3 pinout, SQD40030E_GE3 application, or SQD40030E_GE3 equivalent, key selection criteria include its 175 °C junction rating, AEC-Q101 qualification, low on-resistance at 10 V drive, compact PowerPAK® SO-8L footprint, and suitability for high-current DC/DC conversion in automotive power systems.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for high-voltage switching with minimal conduction and switching losses. Its design targets synchronous rectification in 12 V–48 V automotive rails where fast turn-on/turn-off and low Q_g/R_DS(on) ratio are critical.

The device operates reliably up to T_J = 175 °C and supports standard 10 V gate drive without requiring level-shifting circuitry. Its PowerPAK® SO-8L package provides enhanced thermal performance over SO-8 while maintaining PCB compatibility with industry-standard footprints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports nominal 12 V and 24 V automotive battery rails with margin for load dump transients.
R_DS(on) max @ V_GS = 10 V	0.0046 Ω - Enables ≤ 1.5 W conduction loss at 25 A continuous drain current (T_C = 25 °C).
Q_g	72 nC - Balances switching speed and gate driver power requirement for <100 kHz PWM operation.
I_D continuous @ T_C = 25 °C	100 A - Sustains high peak currents in motor actuator and starter solenoid drive circuits.
T_J max	175 °C - Meets under-hood thermal requirements per AEC-Q101 stress testing protocols.
Package	PowerPAK® SO-8L - 55 % thinner and >50 % smaller than two DPAKs; thermally enhanced copper-clip construction.

Pinout & Package

Package: PowerPAK® SO-8L - 5.0 mm × 6.0 mm × 1.0 mm body, exposed drain pad on bottom, dual-side thermal interface capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source	Internally paralleled source terminals reduce source inductance and improve current sharing in high-di/dt applications.
8	Gate	Single gate input compatible with standard 3.3 V/5 V/10 V logic-level drivers; no level shifter required.
Drain (bottom pad)	Drain	Exposed copper drain pad enables direct thermal coupling to PCB ground plane or heatsink for <1.5 °C/W θ_JA.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and ESD stress per Rev H test plan.
TrenchFET® Gen IV silicon	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, reducing total power loss.
100 % lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and ELV End-of-Life Vehicle requirements.
PowerPAK® SO-8L package	Enables 50 % board area reduction vs. SO-8 while improving thermal resistance by 35 %.

Applications

Engine Control Unit (ECU) Power Stage	ADAS Camera Module DC/DC Converter
Use Scenario: High-current 5 V/3.3 V point-of-load regulation supplying microcontrollers and sensors in engine bay environments. IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology operating at 200–500 kHz. Use Value: Low R_DS(on) minimizes conduction loss at 30 A load; 175 °C rating ensures reliability during extended hot-soak conditions.	Use Scenario: Compact 12 V to 5 V step-down supply powering image sensor and ISP in front-facing camera modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck configuration with integrated controller. Use Value: Small PowerPAK® SO-8L footprint saves space in tight camera housings; low Q_g enables clean gate transitions at 1 MHz switching.
Electric Power Steering (EPS) Motor Driver	Start-Stop System Battery Management
Use Scenario: Half-bridge leg in 12 V EPS motor phase-leg driving brushed or BLDC motors up to 5 kW peak. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional regenerative current during torque assist and return. Use Value: 100 A I_D rating supports short-duration stall currents; robust avalanche energy rating (E_AS = 290 mJ) withstands inductive kickback.	Use Scenario: Load switch and protection element in smart battery disconnect unit managing AGM/LiFePO₄ auxiliary batteries. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay controlling battery isolation and charging paths. Use Value: Fast turn-on (<20 ns) and low R_DS(on) reduce voltage drop during cranking; AEC-Q101 qualification ensures field longevity.

Engine Control Unit (ECU) Power Stage

ADAS Camera Module DC/DC Converter

Use Scenario: High-current 5 V/3.3 V point-of-load regulation supplying microcontrollers and sensors in engine bay environments.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology operating at 200–500 kHz.

Use Value: Low R_DS(on) minimizes conduction loss at 30 A load; 175 °C rating ensures reliability during extended hot-soak conditions.

Use Scenario: Compact 12 V to 5 V step-down supply powering image sensor and ISP in front-facing camera modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck configuration with integrated controller.

Use Value: Small PowerPAK® SO-8L footprint saves space in tight camera housings; low Q_g enables clean gate transitions at 1 MHz switching.

Electric Power Steering (EPS) Motor Driver

Start-Stop System Battery Management

Use Scenario: Half-bridge leg in 12 V EPS motor phase-leg driving brushed or BLDC motors up to 5 kW peak.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional regenerative current during torque assist and return.

Use Value: 100 A I_D rating supports short-duration stall currents; robust avalanche energy rating (E_AS = 290 mJ) withstands inductive kickback.

Use Scenario: Load switch and protection element in smart battery disconnect unit managing AGM/LiFePO₄ auxiliary batteries.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay controlling battery isolation and charging paths.

Use Value: Fast turn-on (<20 ns) and low R_DS(on) reduce voltage drop during cranking; AEC-Q101 qualification ensures field longevity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on) @ 10 V, 110 nC Q_g, PowerFLAT™ 5×6	Higher gate charge increases driver loss; slightly larger package footprint	Preferred when higher avalanche ruggedness (E_AS = 420 mJ) is prioritized over switching efficiency
ON Semiconductor NTMFS4C029NT1G	40 V, 2.9 mΩ R_DS(on) @ 10 V, 62 nC Q_g, SO-8FL	Lower Q_g improves high-frequency efficiency but 10 % higher R_DS(on) raises conduction loss at >20 A	Optimal for 1 MHz+ DC/DC designs where gate drive power dominates total loss budget

Compared with STL220N4F7AG and NTMFS4C029NT1G, the SQD40030E_GE3 offers the best balance of ultra-low R_DS(on), moderate Q_g, and AEC-Q101-compliant thermal robustness-making it ideal for mid-frequency (200–500 kHz), high-current (>30 A) automotive power stages where both conduction and switching losses must be minimized.

Availability

SQD40030E_GE3 is available at Aetrix Electronics and suitable for engine management, ADAS camera power supplies, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.

Supply support for SQD40030E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, PA.

The SQ Automotive MOSFET product line is engineered specifically for under-hood and safety-critical vehicle subsystems, emphasizing AEC-Q101 compliance, 175 °C operation, and packaging optimized for thermal and space-constrained automotive power designs.

FAQ

What is the maximum continuous drain current rating for SQD40030E_GE3 at 100 °C case temperature?

The SQD40030E_GE3 supports 65 A continuous drain current at T_C = 100 °C, derated linearly from 100 A at 25 °C per the datasheet's Safe Operating Area (SOA) curve. This rating accounts for thermal resistance and package limitations under sustained high-power conditions typical in EPS and ECU applications.

Does SQD40030E_GE3 support 4.5 V gate drive for logic-level operation?

No - the SQD40030E_GE3 is specified for R_DS(on) only at V_GS = 10 V (0.0046 Ω max). While it will conduct at 4.5 V, no guaranteed R_DS(on) value is provided at that voltage; it is not characterized as a true logic-level MOSFET. Use with 10 V gate drive is recommended for full performance.

Is SQD40030E_GE3 suitable for avalanche energy handling in inductive load switching?

Yes - the SQD40030E_GE3 is fully rated for repetitive avalanche operation with E_AS = 290 mJ at T_J = 25 °C. This makes it appropriate for motor drive and solenoid control where unclamped inductive switching may occur, provided layout minimizes stray inductance.

What is the thermal resistance from junction to case (θ_JC) for SQD40030E_GE3?

The junction-to-case thermal resistance (θ_JC) of SQD40030E_GE3 is 0.85 °C/W, measured from die junction to the exposed drain pad. This value assumes proper soldering of the bottom thermal pad to a minimum 100 mm² copper area on the PCB, enabling efficient heat transfer in high-power automotive modules.

How does the PowerPAK® SO-8L package of SQD40030E_GE3 compare to standard SO-8 in terms of PCB layout?

The PowerPAK® SO-8L package of SQD40030E_GE3 uses the same 5.0 mm × 6.0 mm outline and pin pitch as SO-8 but replaces the plastic body with a copper-clip structure and exposes the drain on the bottom. Layout requires a thermal pad connected to ground plane; no changes to trace routing or mounting holes are needed beyond adding the thermal stencil.

SQD40030E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD40030E_GE3 FAQ

1.How can I place an order for SQD40030E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD40030E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD40030E_GE3 reliable?

The price and inventory of SQD40030E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40030E_GE3 is usually 5 days.

3.What payment methods are accepted for SQD40030E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40030E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD40030E_GE3?

SQD40030E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD40030E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD40030E_GE3?

For technical support, including SQD40030E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40030E_GE3 requirements.

6.How does Aetrix verify that SQD40030E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD40030E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40030E_GE3 meets industry standards.

7.What is the process for return or replacement of SQD40030E_GE3?

All SQD40030E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40030E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD40030E_GE3 part is unused and in its original packaging.

Return procedure for SQD40030E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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