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Vishay Siliconix SQD40052EL_GE3
- Part No.:
- SQD40052EL_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD40052EL_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:5,916
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Product details
Overview
SQD40052EL from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 30 A continuous drain current at TC = 25 °C, and 0.0060 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, DC-DC converter primary-side switching, and motor drive H-bridge legs.
For engineers reviewing the SQD40052EL datasheet, SQD40052EL pinout, SQD40052EL application, or SQD40052EL equivalent, key selection criteria include its low RDS(on) at 4.5 V (0.0078 Ω), 100 % Rg and UIS testing, TO-252 package thermal performance (RthJC = 2.4 °C/W), and body diode recovery characteristics (trr = 26–52 ns, Qrr = 13–26 nC).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V and 24 V automotive systems. Its gate charge profile (Qg = 34.5–52 nC, Qgd = 6.6 nC) supports efficient PWM operation in synchronous rectification and half-bridge topologies.
The device integrates a robust intrinsic body diode with specified reverse recovery parameters (VSD = 0.83–1.5 V at IF = 15 A, trr = 26–52 ns), enabling reliable freewheeling in inductive loads without external Schottky supplementation in many mid-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 0.0060 Ω - Enables ≤ 900 mW conduction loss at 30 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ VGS = 4.5 V | 0.0078 Ω - Ensures robust turn-on with standard 5 V logic-level gate drivers in microcontroller-based control. |
| ID (continuous) | 30 A at TC = 25 °C - Supports high-current switching in starter solenoid drivers and HVAC blower modules. |
| TJ operating range | −55 °C to +175 °C - Meets under-hood ambient requirements per AEC-Q101, enabling placement near engines or transmissions. |
| RthJC | 2.4 °C/W - Allows direct heatsinking via the exposed drain pad, reducing thermal bottleneck in TO-252 footprint. |
| EAS | 28.8 mJ - Withstands single-pulse inductive energy spikes common in relay and solenoid driving without avalanche failure. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Dimensions per Vishay document 64424: D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, and 3-terminal configuration (Drain, Gate, Source).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Exposed copper pad electrically connected to drain; must be soldered to large copper area for thermal management and low-inductance return path. |
| Gate | Control input for channel conduction | Low-threshold (VGS(th) = 1.2–2.2 V) input requiring < 100 nA leakage; sensitive to ESD-requires gate resistor and TVS protection in production designs. |
| Source | Reference node for gate drive and current sensing | Common return for load current and gate drive loop; layout must minimize inductance to prevent ringing during hard switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock-required for powertrain and chassis ECUs. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor drives. |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure of merit than planar MOSFETs-improves efficiency in 100–500 kHz DC-DC converters. |
| Low RthJC (2.4 °C/W) | Enables > 20 W power dissipation with minimal heatsink-supports compact, fanless designs in space-constrained modules. |
| Body diode with controlled Qrr | Qrr = 13–26 nC and trr = 26–52 ns allow predictable commutation timing in synchronous rectifiers and bidirectional switches. |
Applications
| Engine Control Unit (ECU) Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injector coils in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling coil energization/de-energization with precise 1–5 ms pulse width modulation. Use Value: Low RDS(on) minimizes coil heating during dwell time; 175 °C rating ensures reliability near hot engine blocks; AEC-Q101 compliance guarantees functional safety integrity. | Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V buck converters powering ADAS sensors and infotainment processors. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 200–400 kHz with synchronous rectification. Use Value: Low Qgd and Qg reduce switching losses; TO-252 thermal performance maintains efficiency across −40 °C to +125 °C ambient; 4.5 V RDS(on) enables direct MCU GPIO drive. |
| Electric Power Steering (EPS) Motor Phase Leg | HVAC Blower Motor Inverter Half-Bridge |
Use Scenario: Upper or lower switch in three-phase inverter driving brushless DC motor in EPS column-assist systems. IC Role / Device Role / Timing Role: High-side or low-side switch in 6–20 kHz PWM-controlled leg, handling peak currents ≥ 40 A. Use Value: 120 A pulsed drain current (IDM) accommodates motor stall conditions; EAS = 28.8 mJ withstands inductive kickback during fault shutdown; 100 % UIS test ensures robustness. | Use Scenario: Low-side switch in half-bridge driving 24 V brushed DC blower motor in climate control systems. IC Role / Device Role / Timing Role: PWM-controlled power switch modulating motor speed from 0–100 % duty cycle at 1–20 kHz. Use Value: 30 A continuous rating handles full-load motor surge; body diode forward voltage (VSD = 0.83–1.5 V) limits freewheeling loss; TO-252 footprint simplifies thermal design on cost-sensitive PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, RDS(on) = 0.0042 Ω @ 10 V, TO-263 package, higher ID (220 A pulsed), no AEC-Q101 stated | Higher current capability but larger footprint and unqualified for automotive; better for industrial inverters | Select when higher pulsed current and lower RDS(on) outweigh AEC-Q101 need and board space constraints. |
| IRL40B216TRPBF | 40 V, RDS(on) = 0.0055 Ω @ 10 V, TO-252, AEC-Q101 qualified, slightly lower Qg (28 nC) | Near-identical form factor and qualification; optimized for lower gate drive energy in high-frequency SMPS | Prefer when minimizing gate driver power consumption or improving light-load efficiency is critical. |
Compared with STL220N4F7AG and IRL40B216TRPBF, the SQD40052EL offers balanced RDS(on), gate charge, and automotive qualification in a proven TO-252 layout-making it optimal for cost-sensitive, thermally constrained ECU and body electronics where AEC-Q101 compliance is mandatory and peak current stays ≤ 120 A.
Availability
SQD40052EL is available at Aetrix Electronics and suitable for automotive powertrain control, ADAS power conversion, and HVAC motor drive applications requiring stable component supply across extended product lifecycles.
Supply support for SQD40052EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.
The SQD40052EL belongs to Vishay's automotive-qualified TrenchFET® family, engineered specifically for demanding under-hood and chassis applications where thermal resilience, avalanche ruggedness, and AEC-Q101 validation are non-negotiable.
FAQ
What is the maximum continuous drain current rating for SQD40052EL at 125 °C case temperature?
The SQD40052EL maintains a continuous drain current rating of 30 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and stable RDS(on) behavior up to elevated temperatures-critical for sustained operation in engine bay environments where ambient temperatures exceed 100 °C.
Does SQD40052EL support logic-level gate drive from a 3.3 V microcontroller?
No-SQD40052EL has a gate threshold voltage (VGS(th)) of 1.2–2.2 V, but its RDS(on) is only guaranteed at VGS = 4.5 V and 10 V. At 3.3 V, conduction is incomplete and RDS(on) rises significantly beyond datasheet specs. A level-shifting gate driver or 5 V supply is required to achieve the rated 0.0078 Ω performance.
Is SQD40052EL suitable for synchronous rectification in a 400 kHz buck converter?
Yes-SQD40052EL is well-suited for synchronous rectification at 400 kHz due to its low Qg (34.5–52 nC), low Qgd (6.6 nC), and fast switching times (td(on) = 12–25 ns, tf = 10–20 ns). Its body diode recovery (trr = 26–52 ns, Qrr = 13–26 nC) also minimizes shoot-through risk and commutation loss in high-frequency topologies.
What is the thermal resistance from junction to ambient (RthJA) for SQD40052EL on a standard PCB?
The SQD40052EL exhibits a junction-to-ambient thermal resistance (RthJA) of 50 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes standard DPAK pad layout per Application Note 826; actual RthJA improves significantly with enhanced copper area or heatsinking to the drain pad.
How does the SQD40052EL body diode performance compare to external Schottky diodes in freewheeling applications?
The SQD40052EL body diode delivers VSD = 0.83–1.5 V at IF = 15 A and trr = 26–52 ns-comparable to medium-speed Schottky diodes. While not as fast or low-VF as premium Schottkys, its integrated nature eliminates layout complexity and parasitic inductance, making it sufficient for most 24 V automotive motor and solenoid freewheeling where switching frequency remains below 50 kHz.
SQD40052EL_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD40052EL_GE3 FAQ
1.How can I place an order for SQD40052EL_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD40052EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD40052EL_GE3 reliable?
The price and inventory of SQD40052EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40052EL_GE3 is usually 5 days.
3.What payment methods are accepted for SQD40052EL_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40052EL_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD40052EL_GE3?
SQD40052EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD40052EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD40052EL_GE3?
For technical support, including SQD40052EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40052EL_GE3 requirements.
6.How does Aetrix verify that SQD40052EL_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD40052EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40052EL_GE3 meets industry standards.
7.What is the process for return or replacement of SQD40052EL_GE3?
All SQD40052EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40052EL_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD40052EL_GE3 part is unused and in its original packaging.
Return procedure for SQD40052EL_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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