My Inquiry
My Account
Vishay Siliconix SQD40061EL-T4_GE3
- Part No.:
- SQD40061EL-T4_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD40061EL-T4_GE3.pdf
- Description:
- P-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,495
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQD40061EL-T4_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current, high-temperature switching in power distribution and load management circuits. It features a -40 V drain-source voltage rating, 0.0051 Ω RDS(on) at VGS = -10 V, 100 A continuous drain current capability at TC = 25 °C, and AEC-Q101 qualification - enabling use in 12 V/24 V vehicle body electronics such as smart fuses and reverse polarity protection.
For engineers reviewing the SQD40061EL-T4_GE3 datasheet, SQD40061EL-T4_GE3 pinout, SQD40061EL-T4_GE3 application, or SQD40061EL-T4_GE3 equivalent, this page delivers verified technical context, thermal performance data, TO-252 package layout, and validated alternative options for automotive power system design.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and robust avalanche energy handling (84 mJ). Its gate threshold voltage range of -1.5 V to -2.5 V enables reliable turn-on with standard 3.3 V or 5 V logic-level control in high-side switch configurations.
The device integrates a fast-recovery body diode (trr = 59–120 ns, Qrr = 90–180 nC) and is 100 % Rg and UIS tested. Thermal resistance is optimized with RthJC = 1.4 °C/W and RthJA = 50 °C/W (1" × 1" FR4 PCB), supporting operation up to +175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.0051 Ω - Enables <1 W conduction loss at 100 A, critical for high-efficiency power switches |
| ID (continuous) | -100 A @ TC = 25 °C - Supports high-current loads like HVAC actuators and lighting modules |
| Qg | 185–280 nC - Determines gate drive power requirement; compatible with standard automotive gate drivers |
| EAS | 84 mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness during inductive load switching |
| TJ max | +175 °C - Meets under-hood thermal requirements for engine bay and battery disconnect applications |
| AEC-Q101 | Qualified - Validated for automotive reliability per stress test standards including HTGB, HTRB, and UHAST |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for direct thermal coupling to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives negative gate-source voltage to turn on; requires logic-compatible driver with sufficient sink current |
| D (Drain) | High-side power input | Connected internally to exposed metal tab; must be soldered to large copper area for thermal management |
| S (Source) | Power output / reference node | Provides return path for load current; defines gate drive reference point in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching and conduction losses |
| Low RthJC (1.4 °C/W) | Enables >100 W power dissipation with minimal junction-to-case temperature rise under forced-air or heatsink conditions |
| 100 % Rg and UIS tested | Guarantees gate robustness against ESD and unclamped inductive switching stress in production units |
| Body diode trr < 120 ns | Minimizes reverse recovery losses and EMI in synchronous rectification or freewheeling paths |
| Drain-tab thermal interface | Allows direct mounting to heatsink or internal PCB thermal plane without insulating hardware |
Applications
| Engine Bay Power Distribution | Automotive Body Control Module |
|---|---|
Use Scenario: High-side switching of radiator fan, fuel pump, or cooling valve in engine compartment. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with gate driven by microcontroller GPIO via level-shifting circuit. Use Value: -100 A rating and +175 °C operation ensure uninterrupted function during peak thermal transients; low RDS(on) reduces I²R heating in confined spaces. |
Use Scenario: Reverse polarity protection and overcurrent shutdown for door module, seat control, or mirror actuator. IC Role / Device Role / Timing Role: High-side protection switch placed between battery rail and downstream DC/DC converter or motor driver. Use Value: AEC-Q101 qualification and 84 mJ EAS provide fault tolerance against jump-start events and inductive kickback. |
| 12 V Battery Disconnect Unit | Commercial Vehicle Lighting Control |
Use Scenario: Smart battery isolation in start-stop systems or auxiliary battery management. IC Role / Device Role / Timing Role: Main power switch controlled by system MCU to enable/disable auxiliary loads based on state-of-charge and ignition status. Use Value: Low gate charge (185–280 nC) allows fast, low-power switching transitions; TO-252 package supports automated assembly and high-current PCB routing. |
Use Scenario: PWM dimming and short-circuit protected switching for LED headlamps and DRLs. IC Role / Device Role / Timing Role: High-side current regulator with integrated body diode for freewheeling during PWM off-time. Use Value: Fast body diode recovery (trr = 59–120 ns) suppresses voltage spikes and improves EMC performance in high-frequency PWM operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | RDS(on) = 0.02 Ω @ -10 V (4× higher); Qg = 110 nC; not AEC-Q101 qualified | Lower current density and no automotive qualification limit use to non-safety-critical industrial controls | Select only if cost sensitivity outweighs thermal efficiency and automotive compliance requirements |
| STP40PF06 | RDS(on) = 0.014 Ω @ -10 V; TJ max = +175 °C; AEC-Q101 qualified; TO-220 package | Larger through-hole footprint and higher RthJA (65 °C/W) reduce power density and require mechanical mounting | Prefer when legacy board layout or heatsink compatibility favors TO-220, but expect ~2.7× higher conduction loss vs. SQD40061EL-T4_GE3 |
Compared with IRF4905PbF and STP40PF06, SQD40061EL-T4_GE3 delivers the lowest RDS(on) in TO-252, highest current density per mm², and full AEC-Q101 validation - making it optimal for space-constrained, thermally demanding automotive high-side switches where efficiency and reliability are co-prioritized.
Availability
SQD40061EL-T4_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, battery management systems, and industrial power distribution requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQD40061EL-T4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD40061EL-T4_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in harsh-temperature vehicle subsystems.
FAQ
What is the maximum continuous drain current for SQD40061EL-T4_GE3 at 125 °C case temperature?
The SQD40061EL-T4_GE3 supports -60 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and silicon die; actual usable current depends on PCB layout, ambient temperature, and airflow. The SQD40061EL-T4_GE3 maintains RDS(on) ≤ 0.0079 Ω at this condition, ensuring predictable conduction loss.
Is SQD40061EL-T4_GE3 suitable for high-side switch applications with 3.3 V microcontroller control?
Yes - the SQD40061EL-T4_GE3 has a gate threshold voltage range of -1.5 V to -2.5 V, allowing full enhancement with -3.3 V or -5 V gate drive. However, to achieve its rated RDS(on) of 0.0051 Ω, a -10 V gate-source voltage is required; thus, a dedicated gate driver or charge pump is recommended for logic-level control. The SQD40061EL-T4_GE3 is commonly deployed in such configurations within automotive BCMs.
Does SQD40061EL-T4_GE3 include integrated ESD protection on the gate?
No - the SQD40061EL-T4_GE3 does not integrate gate ESD protection diodes. Its gate oxide is rated for ±20 V VGS, and the datasheet specifies 100 % Rg testing to verify gate robustness, but external gate resistors (e.g., 10–100 Ω) and TVS clamping are recommended in automotive environments. This design choice preserves switching speed and is consistent with Vishay's TrenchFET® high-performance strategy for the SQD40061EL-T4_GE3.
What is the safe operating area (SOA) limitation for SQD40061EL-T4_GE3 in linear mode?
The SQD40061EL-T4_GE3 SOA curve (Figure 6, datasheet page 5) shows that linear-mode operation is limited by RDS(on) at short durations (<10 ms) and by package thermal resistance at longer pulses. At DC, the device is restricted to ≤35 W (TC = 125 °C), corresponding to ~59 A at VDS = -0.6 V. For sustained analog regulation, derating below 20 W is advised. The SQD40061EL-T4_GE3 is optimized for switching, not linear operation.
How does the body diode performance of SQD40061EL-T4_GE3 compare to standard rectifiers in freewheeling applications?
The SQD40061EL-T4_GE3 body diode exhibits VSD = -0.84 to -1.5 V at -30 A and trr = 59–120 ns, outperforming many discrete Schottky diodes in recovery speed while matching forward drop at moderate currents. Its Qrr of 90–180 nC minimizes stored charge loss during commutation. In buck or flyback topologies, this enables efficient synchronous rectification without external diode replacement - a key advantage of the SQD40061EL-T4_GE3 in compact automotive power stages.
SQD40061EL-T4_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 280 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD40061EL-T4_GE3 FAQ
1.How can I place an order for SQD40061EL-T4_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD40061EL-T4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD40061EL-T4_GE3 reliable?
The price and inventory of SQD40061EL-T4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40061EL-T4_GE3 is usually 5 days.
3.What payment methods are accepted for SQD40061EL-T4_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40061EL-T4_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD40061EL-T4_GE3?
SQD40061EL-T4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD40061EL-T4_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD40061EL-T4_GE3?
For technical support, including SQD40061EL-T4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40061EL-T4_GE3 requirements.
6.How does Aetrix verify that SQD40061EL-T4_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD40061EL-T4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40061EL-T4_GE3 meets industry standards.
7.What is the process for return or replacement of SQD40061EL-T4_GE3?
All SQD40061EL-T4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40061EL-T4_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD40061EL-T4_GE3 part is unused and in its original packaging.
Return procedure for SQD40061EL-T4_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQD40061EL-T4_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
