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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD40N06-14L_T4GE3

Name: SQD40N06-14L_T4GE3
Brand: Vishay Siliconix
SKU: SQD40N06-14L_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD40N06-14L_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD40N06-14L_T4GE3.pdf

Description:: MOSFET N-CH 60V 40A TO252AA

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Product details

Overview

SQD40N06-14L_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 40 A continuous drain current at 25 °C, and 0.014 Ω R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-reliability 12 V/24 V automotive power switching applications including motor control and DC-DC converters.

For engineers reviewing the SQD40N06-14L_T4GE3 datasheet, SQD40N06-14L_T4GE3 pinout, SQD40N06-14L_T4GE3 application, or SQD40N06-14L_T4GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V (0.017 Ω), 100 % R_g and UIS testing, junction-to-case thermal resistance of 2 °C/W, and compliance with automotive thermal and reliability requirements.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current DC loads. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while its 34 nC typical total gate charge supports efficient PWM operation up to several hundred kHz.

The device integrates a built-in body diode with 0.85–1.2 V forward voltage at 20 A, and is characterized for safe operating area (SOA) under both linear and switching conditions. Thermal design is supported by validated junction-to-ambient (60 °C/W on 1"² FR4 PCB) and junction-to-case (2 °C/W) resistance values.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump margin
R_DS(on) @ V_GS = 10 V	0.014 Ω - Enables ≤ 22.4 W conduction loss at 40 A, critical for thermally constrained modules
R_DS(on) @ V_GS = 4.5 V	0.017 Ω - Ensures low-loss operation with 5 V microcontroller gate drivers without level-shifting
I_D (continuous, T_C = 25 °C)	40 A - Supports high-current motor phases and solenoid drivers in engine control units
T_J max	+175 °C - Qualified for under-hood environments per AEC-Q101, enabling placement near heat sources
R_thJC	2 °C/W - Allows direct heatsinking via drain-tab mounting, reducing thermal path resistance significantly
Q_g (typ.)	34 nC - Determines gate driver power requirement; compatible with common automotive gate drivers (e.g., UCC27531)

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection. Dimensions per Vishay document 64424: D = 6.09 mm, E = 6.54 mm, H = 9.90 mm, tab length L5 = 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires <20 V absolute max rating; low 1.7 Ω typical gate resistance aids stability
D (Drain)	High-side switched output	Connected internally and externally to metal tab; must be soldered to copper pour for thermal management
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance impacts switching overshoot

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling smaller footprint for same current rating
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per stress test standards
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching events
Low R_thJC (2 °C/W)	Enables >3× higher power dissipation capability compared to standard SO-8 packages at same board area
Drain-connected tab	Provides dual-path thermal conduction (PCB + heatsink) and reduces system-level thermal impedance by up to 40 %

Applications

Engine Control Module (ECM) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 35 A and PWM frequencies ≥ 1 kHz. IC Role / Device Role / Timing Role: Main power switch in low-side configuration; handles repetitive inductive turn-off energy with integrated avalanche rating (E_AS = 51 mJ). Use Value: Low 0.014 Ω R_DS(on) minimizes injector coil heating and improves duty-cycle accuracy across temperature range.	Use Scenario: Variable-speed control of 24 V blower motors in passenger cabin HVAC systems, operating continuously at ambient up to 85 °C. IC Role / Device Role / Timing Role: High-side or low-side power stage switch; leverages 175 °C T_J rating and SOA robustness for sustained 20–30 A operation. Use Value: Junction-to-case thermal resistance of 2 °C/W allows direct tab mounting to chassis, eliminating need for external heatsinks.
12 V/48 V Mild Hybrid DC-DC Converter	Commercial Vehicle LED Headlamp Driver
Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V starter battery and 48 V Li-ion auxiliary bus. IC Role / Device Role / Timing Role: Secondary-side synchronous FET; operates with 100 ns–500 ns dead-time constraints and high dV/dt immunity. Use Value: Low Crss (180–225 pF) and Q_gd/Q_g ratio reduce Miller-induced shoot-through risk during hard switching.	Use Scenario: Constant-current switching for high-brightness LED arrays (≥ 50 W) in Class 8 truck headlamps, subject to ISO 7637-2 pulse 5a/b transients. IC Role / Device Role / Timing Role: Primary switching element in constant-current buck regulator; withstands 60 V V_DS with margin for load dump surges. Use Value: AEC-Q101 qualification and 100 % UIS testing ensure survival under repeated 100 V/50 ms load dump events.

Engine Control Module (ECM) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 35 A and PWM frequencies ≥ 1 kHz.

IC Role / Device Role / Timing Role: Main power switch in low-side configuration; handles repetitive inductive turn-off energy with integrated avalanche rating (E_AS = 51 mJ).

Use Value: Low 0.014 Ω R_DS(on) minimizes injector coil heating and improves duty-cycle accuracy across temperature range.

Use Scenario: Variable-speed control of 24 V blower motors in passenger cabin HVAC systems, operating continuously at ambient up to 85 °C.

IC Role / Device Role / Timing Role: High-side or low-side power stage switch; leverages 175 °C T_J rating and SOA robustness for sustained 20–30 A operation.

Use Value: Junction-to-case thermal resistance of 2 °C/W allows direct tab mounting to chassis, eliminating need for external heatsinks.

12 V/48 V Mild Hybrid DC-DC Converter

Commercial Vehicle LED Headlamp Driver

Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V starter battery and 48 V Li-ion auxiliary bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET; operates with 100 ns–500 ns dead-time constraints and high dV/dt immunity.

Use Value: Low Crss (180–225 pF) and Q_gd/Q_g ratio reduce Miller-induced shoot-through risk during hard switching.

Use Scenario: Constant-current switching for high-brightness LED arrays (≥ 50 W) in Class 8 truck headlamps, subject to ISO 7637-2 pulse 5a/b transients.

IC Role / Device Role / Timing Role: Primary switching element in constant-current buck regulator; withstands 60 V V_DS with margin for load dump surges.

Use Value: AEC-Q101 qualification and 100 % UIS testing ensure survival under repeated 100 V/50 ms load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N6LF6AG	60 V, 100 A, R_DS(on) = 0.0055 Ω @ 10 V; PowerFLAT 5x6 package; higher current, lower R_DS(on), but larger footprint and no AEC-Q101 documentation in public datasheet	More suitable for space-constrained but thermally relaxed designs requiring >60 A peak current	Select when board layout allows larger 5x6 mm² footprint and higher current headroom is needed; verify AEC-Q101 status directly with STMicroelectronics
IRF4905PBF	55 V, 74 A, R_DS(on) = 0.02 Ω @ 10 V; TO-220 package; not AEC-Q101 qualified; higher R_DS(on) and slower switching (Q_g = 140 nC)	Intended for industrial power supplies, not automotive; lacks thermal and reliability validation for under-hood use	Only consider for non-automotive prototypes where cost is primary; avoid for production automotive designs due to missing qualification and thermal limitations

Compared with STL100N6LF6AG and IRF4905PBF, the SQD40N06-14L_T4GE3 offers optimal balance of AEC-Q101 compliance, 0.014 Ω R_DS(on), TO-252 thermal performance, and proven suitability for 40 A automotive switching - making it preferred for ECM, HVAC, and lighting modules where qualification and thermal efficiency are jointly critical.

Availability

SQD40N06-14L_T4GE3 is available at Aetrix Electronics and suitable for engine control modules, automotive HVAC systems, and LED lighting drivers requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for SQD40N06-14L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.

The SQD40N06-14L_T4GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine, chassis, and body electronics where AEC-Q101 compliance and low R_DS(on) are mandatory.

FAQ

What is the maximum continuous drain current rating for SQD40N06-14L_T4GE3 at 125 °C case temperature?

The SQD40N06-14L_T4GE3 supports 29 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures reliable operation in high-ambient under-hood environments. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C for full 29 A utilization.

Is SQD40N06-14L_T4GE3 suitable for high-frequency PWM motor control above 20 kHz?

Yes, the SQD40N06-14L_T4GE3 is suitable for PWM motor control up to 200 kHz due to its 34 nC typical total gate charge and low 1.7 Ω gate resistance, which enable fast, controlled switching transitions. Measured rise/fall times (13–20 ns / 9–14 ns) and low Crss (180–225 pF) minimize Miller effect - critical for stable high-frequency operation in BLDC and stepper motor drivers.

Does SQD40N06-14L_T4GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SQD40N06-14L_T4GE3 includes a monolithic body diode with V_SD = 0.85–1.2 V at I_F = 20 A and V_GS = 0 V. This diode supports freewheeling in inductive loads and is characterized for pulsed current up to 160 A. Its soft recovery behavior is confirmed by typical reverse recovery time data in Vishay's Application Note AN826.

What is the gate threshold voltage range for SQD40N06-14L_T4GE3, and how does it affect 3.3 V MCU compatibility?

The gate threshold voltage (V_GS(th)) for SQD40N06-14L_T4GE3 is 1.5–2.5 V, ensuring reliable turn-on with 3.3 V microcontrollers. At V_GS = 4.5 V, it achieves R_DS(on) = 0.017 Ω - sufficient for most automotive low-side switches. No gate driver is required for basic on/off control, though a driver improves switching speed and noise immunity in noisy environments.

How is thermal performance validated for SQD40N06-14L_T4GE3 in real automotive PCB layouts?

Thermal performance of SQD40N06-14L_T4GE3 is validated per JEDEC JESD51-2 on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. R_thJA = 60 °C/W and R_thJC = 2 °C/W are measured under those conditions. For production layouts, Vishay recommends minimum 400 mm² copper pour under the drain tab and thermal vias to inner layers - validated in Application Note AN826 for DPAK pad stacks.

SQD40N06-14L_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2105 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD40N06-14L_T4GE3 FAQ

1.How can I place an order for SQD40N06-14L_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD40N06-14L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD40N06-14L_T4GE3 reliable?

The price and inventory of SQD40N06-14L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40N06-14L_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD40N06-14L_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40N06-14L_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD40N06-14L_T4GE3?

SQD40N06-14L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD40N06-14L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD40N06-14L_T4GE3?

For technical support, including SQD40N06-14L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40N06-14L_T4GE3 requirements.

6.How does Aetrix verify that SQD40N06-14L_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD40N06-14L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40N06-14L_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD40N06-14L_T4GE3?

All SQD40N06-14L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40N06-14L_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD40N06-14L_T4GE3 part is unused and in its original packaging.

Return procedure for SQD40N06-14L_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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