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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD40N10-25-T4_GE3

Name: SQD40N10-25-T4_GE3
Brand: Vishay Siliconix
SKU: SQD40N10-25-T4_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD40N10-25-T4_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD40N10-25-T4_GE3.pdf

Description:: MOSFET N-CH 100V 40A TO252AA

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Product details

Overview

SQD40N10-25-T4_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 40 A continuous drain current at 25 °C, and 0.025 Ω R_DS(on) at V_GS = 10 V; it operates up to +175 °C junction temperature and is qualified to AEC-Q101 for engine control, DC-DC converters, and motor drive circuits.

For engineers reviewing the SQD40N10-25-T4_GE3 datasheet, SQD40N10-25-T4_GE3 pinout, SQD40N10-25-T4_GE3 application, or SQD40N10-25-T4_GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.1 °C/W), gate charge (Q_g = 46–70 nC), avalanche energy rating (E_AS = 80 mJ), and TO-252 package layout guidance for high-reliability automotive power switching design.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (13 nC / 8.2 nC typical) for reduced Miller effect and improved hard-switching robustness. Its 100 % UIS-tested construction ensures single-pulse avalanche capability up to 40 A with 80 mJ energy absorption.

The device features a thermally enhanced TO-252 (DPAK) package with drain-connected tab, delivering R_thJC = 1.1 °C/W and R_thJA = 50 °C/W on 1"² FR4 PCB - enabling high-current operation in constrained under-hood environments without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V automotive bus systems with margin against load-dump transients.
R_DS(on) @ V_GS = 10 V	0.025 Ω max - enables <1 W conduction loss at 20 A, critical for thermally limited ECUs.
I_D (continuous, T_C = 25 °C)	40 A - sustains peak motor phase currents in 12 V/24 V brushless DC drivers.
E_AS	80 mJ - withstands inductive turn-off energy in solenoid and relay driving without snubbers.
Q_g	46–70 nC - balances switching speed and gate driver power demand in 20–100 kHz PWM applications.
T_J range	−55 to +175 °C - certified for under-hood placement in transmission control modules and battery disconnect units.
AEC-Q101	Qualified - meets stress test requirements for automotive electronics per JESD22 and JESD47 standards.

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab for direct thermal coupling to PCB copper pour; 3-terminal configuration optimized for high-current, low-inductance layouts in automotive power stages.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 4.5–20 V logic-level signal; 1.5–2.5 V threshold enables compatibility with 3.3 V and 5 V microcontrollers.
D (Drain)	High-side switch node	Connected internally to metal tab; must be soldered to large copper area for thermal and current path integrity.
S (Source)	Power return / reference	Serves as local ground reference for gate drive; requires low-impedance connection to minimize shoot-through risk.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size, reducing conduction losses in space-constrained modules.
100 % UIS tested	Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external clamping in inductive load switching.
Low R_thJC = 1.1 °C/W	Enables >90 % of rated power dissipation to transfer directly from die to heatsink via PCB, supporting compact thermal design.
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD testing - required for ASIL-B system components.
Drain-connected tab	Provides lowest possible source-to-heatsink thermal path and reduces parasitic inductance in high-di/dt gate drive loops.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive DC-DC Converter Primary Switch
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles repetitive UIS events during de-energization. Use Value: 80 mJ E_AS and 175 °C T_J rating ensure reliable operation across ambient temperatures from −40 °C to +125 °C under hood.	Use Scenario: 20–100 kHz synchronous rectification or primary-side switching in 12 V → 5 V/3.3 V buck converters for ADAS sensors. IC Role / Device Role / Timing Role: Main power switch in non-isolated buck topology; selected for low Q_g and R_DS(on) to minimize total losses. Use Value: 0.025 Ω R_DS(on) at 10 V and 46 nC Q_g enable >92 % efficiency at 15 A output with minimal gate drive power.
Electric Power Steering (EPS) Motor Phase Switch	12 V Battery Disconnect Switch
Use Scenario: Half-bridge leg in three-phase inverter driving 12 V brushed or BLDC assist motors (≤500 W). IC Role / Device Role / Timing Role: High-current, high-reliability N-channel switch operating in PWM mode with bidirectional current flow via body diode. Use Value: 40 A I_D rating and 0.9–1.5 V V_SD forward drop support regenerative braking and freewheeling without external diodes.	Use Scenario: Solid-state replacement for mechanical relays in battery management systems, handling 30–40 A continuous load with fault protection. IC Role / Device Role / Timing Role: High-side or low-side main contactor switch; activated during ignition-on and disabled during sleep mode. Use Value: AEC-Q101 qualification and 100 % R_g testing ensure zero latent defects in safety-critical battery isolation functions.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles repetitive UIS events during de-energization.

Use Value: 80 mJ E_AS and 175 °C T_J rating ensure reliable operation across ambient temperatures from −40 °C to +125 °C under hood.

Use Scenario: 20–100 kHz synchronous rectification or primary-side switching in 12 V → 5 V/3.3 V buck converters for ADAS sensors.

IC Role / Device Role / Timing Role: Main power switch in non-isolated buck topology; selected for low Q_g and R_DS(on) to minimize total losses.

Use Value: 0.025 Ω R_DS(on) at 10 V and 46 nC Q_g enable >92 % efficiency at 15 A output with minimal gate drive power.

Electric Power Steering (EPS) Motor Phase Switch

12 V Battery Disconnect Switch

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V brushed or BLDC assist motors (≤500 W).

IC Role / Device Role / Timing Role: High-current, high-reliability N-channel switch operating in PWM mode with bidirectional current flow via body diode.

Use Value: 40 A I_D rating and 0.9–1.5 V V_SD forward drop support regenerative braking and freewheeling without external diodes.

Use Scenario: Solid-state replacement for mechanical relays in battery management systems, handling 30–40 A continuous load with fault protection.

IC Role / Device Role / Timing Role: High-side or low-side main contactor switch; activated during ignition-on and disabled during sleep mode.

Use Value: AEC-Q101 qualification and 100 % R_g testing ensure zero latent defects in safety-critical battery isolation functions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N10F7	R_DS(on) = 0.0095 Ω @ 10 V (lower), but only rated to 150 °C T_J and not AEC-Q101 qualified.	Preferred for industrial DC-DC where temperature derating is acceptable and automotive qualification is not mandated.	Select STL135N10F7 only if AEC-Q101 compliance is unnecessary and lower R_DS(on) justifies higher cost and larger TO-220FP package.
IRF3205PbF	R_DS(on) = 0.008 Ω @ 10 V, but lacks AEC-Q101 qualification, has higher Q_g (71 nC), and only rated to 175 °C with no automotive stress validation.	Suitable for legacy 12 V automotive accessories where qualification documentation is not audited.	Choose IRF3205PbF only for cost-sensitive non-safety applications where full AEC-Q101 traceability is waived by OEM.

Compared with STL135N10F7 and IRF3205PbF, SQD40N10-25-T4_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and validated UIS performance - making it the only option approved for ASIL-B power switching in modern ECU and EPS designs.

Availability

SQD40N10-25-T4_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended vehicle lifecycles.

Supply support for SQD40N10-25-T4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

SQD40N10-25-T4_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control modules.

FAQ

What is the maximum continuous drain current for SQD40N10-25-T4_GE3 at 125 °C case temperature?

The maximum continuous drain current for SQD40N10-25-T4_GE3 is 26 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 1.1 °C/W junction-to-case thermal resistance. Engineers must verify PCB copper area and airflow to sustain this current in real-world conditions.

Is SQD40N10-25-T4_GE3 suitable for high-frequency PWM applications above 50 kHz?

Yes, SQD40N10-25-T4_GE3 supports PWM frequencies up to 100 kHz due to its low total gate charge (46–70 nC) and fast switching times (t_d(on) = 11–17 ns, t_f = 6–9 ns). However, gate driver strength and PCB layout inductance must be optimized to realize these speeds - especially given its 0.9–3.1 Ω gate resistance specification.

Does SQD40N10-25-T4_GE3 include integrated ESD protection on the gate terminal?

No, SQD40N10-25-T4_GE3 does not integrate ESD protection circuitry. Its gate-source leakage is specified at ±100 nA at ±20 V, and the absolute maximum V_GS is ±20 V - indicating reliance on external gate resistors and TVS clamps for ESD robustness in automotive harness environments.

Can SQD40N10-25-T4_GE3 replace older Vishay SQD40N10-15 in existing designs?

No - SQD40N10-25-T4_GE3 has higher R_DS(on) (0.025 Ω vs. 0.015 Ω) and different gate charge profile than SQD40N10-15. Substitution requires revalidation of thermal performance, switching losses, and gate drive capability; it is not a drop-in replacement despite identical package and pinout.

What is the recommended minimum PCB pad layout for SQD40N10-25-T4_GE3 in TO-252 package?

Vishay recommends a minimum 0.224" × 0.420" (5.69 mm × 10.67 mm) copper pad for the drain tab, with thermal vias spaced ≤1.5 mm apart and filled with solder. The Application Note 826 specifies 2 oz. copper on both sides of FR4, covering ≥75 % of the tab footprint to achieve the rated R_thJA = 50 °C/W.

SQD40N10-25-T4_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD40N10-25-T4_GE3 FAQ

1.How can I place an order for SQD40N10-25-T4_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD40N10-25-T4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD40N10-25-T4_GE3 reliable?

The price and inventory of SQD40N10-25-T4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40N10-25-T4_GE3 is usually 5 days.

3.What payment methods are accepted for SQD40N10-25-T4_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40N10-25-T4_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD40N10-25-T4_GE3?

SQD40N10-25-T4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD40N10-25-T4_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD40N10-25-T4_GE3?

For technical support, including SQD40N10-25-T4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40N10-25-T4_GE3 requirements.

6.How does Aetrix verify that SQD40N10-25-T4_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD40N10-25-T4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40N10-25-T4_GE3 meets industry standards.

7.What is the process for return or replacement of SQD40N10-25-T4_GE3?

All SQD40N10-25-T4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40N10-25-T4_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD40N10-25-T4_GE3 part is unused and in its original packaging.

Return procedure for SQD40N10-25-T4_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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