Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD45N05-20L-GE3

Name: SQD45N05-20L-GE3
Brand: Vishay Siliconix
SKU: SQD45N05-20L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQD45N05-20L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD45N05-20L-GE3.pdf

Description:: MOSFET N-CH 50V 50A TO252

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,131

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQD45N05-20L-GE3 from Vishay Siliconix is a 50 V, 45 A, 20 mΩ N-channel TrenchFET® power MOSFET in TO-252 (DPAK) package, optimized for high-efficiency DC-DC conversion and motor control switching in industrial power supplies and automotive body electronics.

For engineers reviewing the SQD45N05-20L-GE3 datasheet, SQD45N05-20L-GE3 pinout, SQD45N05-20L-GE3 application, or SQD45N05-20L-GE3 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 42 nC, SOA compliance up to 100 µs, and AEC-Q101 qualification status.

Technical Context

This device uses Vishay's TrenchFET® Gen III process to achieve low on-resistance with fast switching characteristics. It features a 100% avalanche-rated structure and specified safe operating area (SOA) for repetitive pulse conditions up to 100 µs at 25 °C case temperature.

The MOSFET supports gate drive voltages from 4.5 V to 20 V, with threshold voltage V_GS(th) ranging from 1.2 V to 2.5 V and guaranteed turn-on at 4.5 V. Its thermal resistance R_θJC is 1.7 °C/W, enabling high-power operation in compact surface-mount layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - maximum drain-source blocking voltage for 12 V and 24 V automotive and industrial bus systems
I_D (T_C = 25 °C)	45 A - continuous drain current rating at heatsink-mounted condition, usable in 30–40 W load switches
R_DS(on) max @ V_GS = 10 V	20 mΩ - enables <1 W conduction loss at 7 A, critical for thermally constrained PCB layouts
Q_g	42 nC - total gate charge determining driver strength requirement and switching loss trade-off
V_GS(th)	1.2 V to 2.5 V - ensures reliable enhancement-mode turn-on with standard logic-level microcontrollers
R_θJC	1.7 °C/W - allows direct thermal path to copper pour or heatsink, supporting >25 W dissipation with 40 °C rise

Pinout & Package

Package: TO-252 (DPAK), reverse pinout (drain tab on top side, source and gate on bottom side), surface-mount, single-die silicon construction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Primary current return path; electrically tied to exposed drain tab via internal substrate in reverse DPAK
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; sensitive to ESD but compatible with 3.3 V/5 V logic drivers
Pin 3 (Drain)	Power output node	Internally connected to large copper drain tab on top surface for low-inductance, high-current routing

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including body control modules and lighting drivers per stress test requirements
100% R_g tested	Guarantees gate resistance consistency across production lots, reducing gate oscillation risk in high-speed switching
Specified SOA (100 µs)	Enables robust linear-mode operation during inrush or fault events without derating or external current limiting
TrenchFET® Gen III technology	Delivers 20% lower R_DS(on) vs. prior generation at same die size, improving power density in space-constrained designs

Applications

Automotive Body Control Module	Industrial DC-DC Converter Primary Switch
Use Scenario: High-side load switching for LED headlamps and HVAC actuators in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC with bootstrap supply. Use Value: 20 mΩ R_DS(on) limits self-heating to <0.5 W at 5 A, eliminating need for active cooling in sealed enclosures.	Use Scenario: Synchronous rectifier in 48 V-to-12 V isolated buck converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 42 nC Q_g enables efficient 300 kHz switching with standard gate drivers, cutting diode loss by >65%.
Motor Drive Half-Bridge Leg	Server PSU ORing FET
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for robotic joint controllers. IC Role / Device Role / Timing Role: Fast-switching power stage element with defined SOA for stall-current handling. Use Value: 100 µs SOA rating supports 10× rated current pulses during motor startup without thermal runaway.	Use Scenario: Hot-swap ORing FET in redundant 12 V server backplane power distribution. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) pass transistor in ideal diode configuration. Use Value: 1.2–2.5 V V_GS(th) range ensures clean turn-on with dedicated ORing controller ICs like LTC4359.

Automotive Body Control Module

Industrial DC-DC Converter Primary Switch

Use Scenario: High-side load switching for LED headlamps and HVAC actuators in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC with bootstrap supply.

Use Value: 20 mΩ R_DS(on) limits self-heating to <0.5 W at 5 A, eliminating need for active cooling in sealed enclosures.

Use Scenario: Synchronous rectifier in 48 V-to-12 V isolated buck converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 42 nC Q_g enables efficient 300 kHz switching with standard gate drivers, cutting diode loss by >65%.

Motor Drive Half-Bridge Leg

Server PSU ORing FET

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for robotic joint controllers.

IC Role / Device Role / Timing Role: Fast-switching power stage element with defined SOA for stall-current handling.

Use Value: 100 µs SOA rating supports 10× rated current pulses during motor startup without thermal runaway.

Use Scenario: Hot-swap ORing FET in redundant 12 V server backplane power distribution.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) pass transistor in ideal diode configuration.

Use Value: 1.2–2.5 V V_GS(th) range ensures clean turn-on with dedicated ORing controller ICs like LTC4359.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	60 V V_DS, 74 A I_D, 20 mΩ R_DS(on), TO-220 package, no AEC-Q101 qualification	Higher voltage margin but through-hole mounting; unsuitable for automotive surface-mount assembly	Select when higher V_DS headroom is needed and board space permits leaded package
STP45NF05L	55 V V_DS, 45 A I_D, 22 mΩ R_DS(on), TO-220FP package, no AEC-Q101	Similar current rating but higher R_DS(on) and non-automotive qualification; limited to industrial use	Choose only if legacy design reuse requires identical pinout and footprint compatibility with TO-220FP

Compared with IRF4905PbF and STP45NF05L, the SQD45N05-20L-GE3 provides AEC-Q101 compliance, surface-mount TO-252 packaging, and tighter R_DS(on) tolerance-making it the sole option qualified for new automotive surface-mount power stages.

Availability

SQD45N05-20L-GE3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and motor control systems requiring stable component supply and long-term lifecycle support.

Supply support for SQD45N05-20L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, Pennsylvania.

The SQD45N05-20L-GE3 belongs to Vishay Siliconix's TrenchFET® Gen III automotive-qualified power MOSFET family, designed specifically for high-reliability, surface-mount switching in 12 V and 24 V vehicle subsystems.

FAQ

What is the gate threshold voltage range for SQD45N05-20L-GE3?

The SQD45N05-20L-GE3 has a guaranteed gate threshold voltage (V_GS(th)) range of 1.2 V to 2.5 V at I_D = 250 µA. This ensures reliable turn-on with 3.3 V logic-level drivers and compatibility with common microcontroller GPIO outputs without level-shifting circuitry.

Is SQD45N05-20L-GE3 qualified for automotive applications?

Yes, the SQD45N05-20L-GE3 is AEC-Q101 qualified and manufactured in an IATF 16949-certified facility. Its qualification includes temperature cycling, humidity testing, and accelerated life stress tests required for under-hood and cabin-mounted automotive electronics.

What is the thermal resistance junction-to-case for SQD45N05-20L-GE3?

The SQD45N05-20L-GE3 has a maximum junction-to-case thermal resistance (R_θJC) of 1.7 °C/W when mounted on a 1-in² 2-oz copper pad. This value is measured under standardized JEDEC test conditions and enables accurate thermal modeling for heatsink or PCB copper pour sizing.

Does SQD45N05-20L-GE3 support 4.5 V gate drive?

Yes, the SQD45N05-20L-GE3 is fully characterized and guaranteed to conduct rated current at V_GS = 4.5 V. Its R_DS(on) is specified at both 4.5 V and 10 V, making it suitable for logic-level and battery-powered applications where gate drive voltage is limited.

What is the safe operating area (SOA) duration specified for SQD45N05-20L-GE3?

The SQD45N05-20L-GE3 specifies a repetitive pulsed SOA up to 100 µs at T_C = 25 °C. This rating applies to single-pulse and repetitive pulse conditions and is validated per JEDEC JESD24-1, supporting robust operation during motor startup and short-circuit transients.

SQD45N05-20L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD45N05-20L-GE3 FAQ

1.How can I place an order for SQD45N05-20L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD45N05-20L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD45N05-20L-GE3 reliable?

The price and inventory of SQD45N05-20L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD45N05-20L-GE3 is usually 5 days.

3.What payment methods are accepted for SQD45N05-20L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD45N05-20L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD45N05-20L-GE3?

SQD45N05-20L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD45N05-20L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD45N05-20L-GE3?

For technical support, including SQD45N05-20L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD45N05-20L-GE3 requirements.

6.How does Aetrix verify that SQD45N05-20L-GE3 is sourced from the original manufacturer or authorized distributors?

All SQD45N05-20L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD45N05-20L-GE3 meets industry standards.

7.What is the process for return or replacement of SQD45N05-20L-GE3?

All SQD45N05-20L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD45N05-20L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD45N05-20L-GE3 part is unused and in its original packaging.

Return procedure for SQD45N05-20L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …