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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD45P03-12-T4_GE3

Name: SQD45P03-12-T4_GE3
Brand: Vishay Siliconix
SKU: SQD45P03-12-T4_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD45P03-12-T4_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD45P03-12-T4_GE3.pdf

Description:: MOSFET P-CH 30V 50A TO252AA

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Product details

Overview

SQD45P03-12-T4_GE3 from Vishay Siliconix is an automotive-grade P-channel TrenchFET® MOSFET with -30 V V_DS, 0.010 Ω R_DS(on) at -10 V V_GS, and -50 A continuous drain current at T_C = 25 °C, designed for high-reliability 12 V battery-side load switching in engine control units and body electronics.

For engineers reviewing the SQD45P03-12-T4_GE3 datasheet, SQD45P03-12-T4_GE3 pinout, SQD45P03-12-T4_GE3 application, or SQD45P03-12-T4_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, low R_DS(on) at -4.5 V gate drive, TO-252 package thermal performance, and integrated source-drain diode characteristics for reverse polarity protection circuits.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with trench-gate architecture optimized for low conduction loss and fast switching in DC load-switching topologies. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures robust turn-on with standard automotive microcontroller I/O levels, while the 55.3 nC total gate charge supports efficient PWM operation up to 100 kHz in motor driver H-bridge high-side configurations.

The device features drain-connected tab packaging for direct thermal coupling to PCB copper, achieving 2.1 °C/W junction-to-case resistance. Its 100% R_g and UIS testing, combined with -31 A single-pulse avalanche current rating, confirms ruggedness under inductive load interruption and load-dump transients common in 12 V vehicle electrical systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load-dump spikes
R_DS(on) @ -10 V	0.010 Ω - Enables ≤7.5 W conduction loss at -50 A, supporting compact thermal design in space-constrained ECUs
R_DS(on) @ -4.5 V	0.024 Ω - Ensures reliable turn-on using 5 V logic-level gate drivers without level-shifting circuitry
I_D (continuous)	-50 A @ T_C = 25 °C - Supports high-current loads such as fuel pumps, radiator fans, and solenoid actuators
T_J max	+175 °C - Meets under-hood temperature requirements for powertrain and chassis modules
E_AS	48 mJ - Withstands repetitive inductive energy dissipation during relay or motor coil de-energization
Q_g	55.3 nC typical - Balances switching speed and gate driver power consumption in 20–100 kHz PWM applications

Pinout & Package

Supplied in TO-252AA (DPAK) package with exposed drain-connected tab for enhanced thermal dissipation; dimensions per Vishay document 64424 (Revision 12-May-2025), requiring minimum 10.67 mm × 5.69 mm copper pad per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for load current	Connected to system ground or battery negative; must be routed with low-inductance trace for di/dt stability
Gate (G)	Control terminal for channel conduction	Requires <100 nA leakage handling; gate resistor selection critical for EMI control and dv/dt immunity
Drain (D)	Main current path and thermal interface	Internally bonded to exposed metal tab; must be soldered to ≥1"² copper area for 71 W power dissipation capability

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across -55 °C to +175 °C with zero defect screening and stress testing per JEDEC standards
TrenchFET® architecture	Delivers 24% lower R_DS(on) at -4.5 V vs. planar P-channel equivalents, reducing gate drive power by >30%
100% R_g tested	Ensures consistent gate resistance (1.40–4.50 Ω) for predictable turn-on/turn-off timing and EMI profile
Drain-connected tab	Enables direct thermal path to PCB heatsink; achieves 2.1 °C/W R_thJC without external heatsink
Integrated source-drain diode	V_SD = -0.9 V at -40 A enables reverse polarity protection without discrete diode, saving board space and BOM cost

Applications

Engine Control Unit Load Switching	Body Control Module Power Distribution
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs operating at ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlling 12 V supply to inductive loads with precise PWM duty cycle modulation. Use Value: 0.010 Ω R_DS(on) minimizes heat generation during sustained 50 A peak currents, enabling smaller heatsinks and higher power density.	Use Scenario: Centralized power distribution for door locks, window lifters, and interior lighting in modern BCMs with CAN/LIN communication interfaces. IC Role / Device Role / Timing Role: Low-voltage-drop load switch providing overcurrent and short-circuit protection via integrated current-sense capability in feedback loop. Use Value: -4.5 V gate drive compatibility eliminates need for dedicated high-side driver ICs, reducing component count and system cost.
Reverse Polarity Protection	Start-Stop System Battery Management
Use Scenario: Input protection for infotainment head units and ADAS cameras connected directly to vehicle battery rail subject to jump-start and reverse-battery faults. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with battery input, conducting only when polarity is correct and gate is pulled low. Use Value: Integrated source-drain diode with -0.9 V forward drop provides fail-safe clamping without external components, meeting ISO 16750-2 pulse 4a requirements.	Use Scenario: Bidirectional power path management between starter battery and auxiliary AGM battery in 12 V start-stop systems with regenerative braking energy recovery. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET used in buck-boost converter topology to regulate auxiliary battery voltage during engine-off periods. Use Value: 175 °C rated junction temperature ensures reliability during extended cranking events where battery voltage drops below 6 V and ambient exceeds 105 °C.

Engine Control Unit Load Switching

Body Control Module Power Distribution

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs operating at ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlling 12 V supply to inductive loads with precise PWM duty cycle modulation.

Use Value: 0.010 Ω R_DS(on) minimizes heat generation during sustained 50 A peak currents, enabling smaller heatsinks and higher power density.

Use Scenario: Centralized power distribution for door locks, window lifters, and interior lighting in modern BCMs with CAN/LIN communication interfaces.

IC Role / Device Role / Timing Role: Low-voltage-drop load switch providing overcurrent and short-circuit protection via integrated current-sense capability in feedback loop.

Use Value: -4.5 V gate drive compatibility eliminates need for dedicated high-side driver ICs, reducing component count and system cost.

Reverse Polarity Protection

Start-Stop System Battery Management

Use Scenario: Input protection for infotainment head units and ADAS cameras connected directly to vehicle battery rail subject to jump-start and reverse-battery faults.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with battery input, conducting only when polarity is correct and gate is pulled low.

Use Value: Integrated source-drain diode with -0.9 V forward drop provides fail-safe clamping without external components, meeting ISO 16750-2 pulse 4a requirements.

Use Scenario: Bidirectional power path management between starter battery and auxiliary AGM battery in 12 V start-stop systems with regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET used in buck-boost converter topology to regulate auxiliary battery voltage during engine-off periods.

Use Value: 175 °C rated junction temperature ensures reliability during extended cranking events where battery voltage drops below 6 V and ambient exceeds 105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.020 Ω @ -10 V; 150 °C T_J max; no AEC-Q101 qualification	Limited to non-automotive industrial power supplies due to lack of automotive qualification and lower temperature rating	Select when cost sensitivity outweighs automotive compliance and thermal margin requirements
STP45PF03L	R_DS(on) = 0.012 Ω @ -10 V; AEC-Q101 qualified; TO-220 package with higher R_thJA (65 °C/W)	Requires larger heatsink volume due to TO-220 thermal resistance; suitable for less space-constrained modules	Select when mechanical mounting constraints favor through-hole assembly and thermal mass can accommodate higher R_thJA

Compared with IRF4905PbF and STP45PF03L, the SQD45P03-12-T4_GE3 delivers superior thermal performance in surface-mount form factor, tighter gate threshold distribution for consistent low-V_GS turn-on, and full automotive qualification-making it optimal for next-generation compact, high-temperature ECU designs.

Availability

SQD45P03-12-T4_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and reverse polarity protection circuits requiring stable component supply across multi-year production cycles.

Supply support for SQD45P03-12-T4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD45P03-12-T4_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-efficiency, high-temperature load switching in 12 V vehicle electrical architectures.

FAQ

What is the maximum continuous drain current rating for SQD45P03-12-T4_GE3 at 125 °C case temperature?

The SQD45P03-12-T4_GE3 supports -37 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under high ambient conditions and must be validated against actual PCB layout and airflow in the target application. The SQD45P03-12-T4_GE3 maintains safe operation within its SOA curve up to this current when mounted on a 1"² FR-4 PCB with 2 oz. copper.

Does SQD45P03-12-T4_GE3 support logic-level gate drive from a 3.3 V microcontroller?

No, the SQD45P03-12-T4_GE3 is not guaranteed to fully enhance with 3.3 V gate drive. Its gate threshold voltage range is -1.5 V to -2.5 V, but R_DS(on) is only specified at -4.5 V and -10 V. At -3.3 V, the device operates in weak inversion with significantly elevated R_DS(on) (>0.1 Ω), causing excessive power loss. The SQD45P03-12-T4_GE3 requires minimum -4.5 V gate-source voltage for reliable low-loss switching in production systems.

How is the drain tab of SQD45P03-12-T4_GE3 electrically isolated during PCB layout?

It is not isolated-the drain terminal is internally connected to the exposed metal tab in the TO-252AA package. During PCB layout, the tab must be soldered directly to a large copper pour tied to the system's high-side power net (e.g., battery positive). No dielectric layer or isolation is applied beneath the tab; doing so would severely degrade thermal performance and violate Vishay's recommended mounting per Application Note 826.

What does "100 % R_g tested" mean for SQD45P03-12-T4_GE3?

"100 % R_g tested" means every unit of SQD45P03-12-T4_GE3 undergoes production test verifying gate resistance between 1.40 Ω and 4.50 Ω at 1 MHz. This ensures consistent gate charging behavior across the production lot, critical for predictable switching timing, EMI signature, and gate driver power dissipation-especially important in synchronized multi-phase automotive power stages where the SQD45P03-12-T4_GE3 may be deployed.

Can SQD45P03-12-T4_GE3 replace N-channel MOSFETs in high-side switching configurations?

Yes-the SQD45P03-12-T4_GE3 is specifically designed as a P-channel high-side switch, eliminating the need for bootstrap circuitry or level-shifted gate drivers required by N-channel devices. Its -30 V V_DS rating and -50 A current capability make it a direct functional replacement in 12 V automotive high-side applications, though layout must account for its inverted logic (low gate = on) and drain-connected tab routing. The SQD45P03-12-T4_GE3 simplifies design while maintaining AEC-Q101 compliance.

SQD45P03-12-T4_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3495 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD45P03-12-T4_GE3 FAQ

1.How can I place an order for SQD45P03-12-T4_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD45P03-12-T4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD45P03-12-T4_GE3 reliable?

The price and inventory of SQD45P03-12-T4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD45P03-12-T4_GE3 is usually 5 days.

3.What payment methods are accepted for SQD45P03-12-T4_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD45P03-12-T4_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD45P03-12-T4_GE3?

SQD45P03-12-T4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD45P03-12-T4_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD45P03-12-T4_GE3?

For technical support, including SQD45P03-12-T4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD45P03-12-T4_GE3 requirements.

6.How does Aetrix verify that SQD45P03-12-T4_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD45P03-12-T4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD45P03-12-T4_GE3 meets industry standards.

7.What is the process for return or replacement of SQD45P03-12-T4_GE3?

All SQD45P03-12-T4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD45P03-12-T4_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD45P03-12-T4_GE3 part is unused and in its original packaging.

Return procedure for SQD45P03-12-T4_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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