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Vishay Siliconix SQD50034E_GE3
- Part No.:
- SQD50034E_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50034E_GE3.pdf
- Description:
- MOSFET N-CH 60V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,301
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Product details
Overview
SQD50034E_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V, 100 A TrenchFET® power MOSFET in TO-252 package, featuring RDS(on) = 3.9 mΩ at VGS = 10 V and 20 A, AEC-Q101 qualification, 175 °C maximum junction temperature, and drain-connected tab for enhanced thermal performance - used in high-current DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQD50034E_GE3 datasheet, SQD50034E_GE3 pinout, SQD50034E_GE3 application, or SQD50034E_GE3 equivalent, key selection criteria include its low RDS(on) at elevated temperature, robust UIS capability (50 A single-pulse avalanche), 100 % Rg and UIS tested screening, and thermal resistance RthJC = 1.4 °C/W enabling high-power density designs without forced cooling.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in automotive 12 V/24 V systems. Its gate charge profile (Qg = 58–90 nC, Qgd = 5–85 nC) supports efficient PWM operation up to 200 kHz with minimal drive loss, while the body diode exhibits trr = 50–100 ns and Qrr = 55–110 nC for synchronous rectification compatibility.
The device operates across -55 °C to +175 °C junction range and maintains RDS(on) ≤ 7.9 mΩ at 175 °C and 20 A, ensuring stable performance under under-hood thermal stress. Its safe operating area (SOA) is defined up to 100 A at 10 V VDS for 10 ms pulses, supporting peak-load handling in starter-generator and EPS applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports 24 V automotive battery systems with ≥2× voltage margin against load-dump transients. |
| RDS(on) @ 10 V, 20 A, 25 °C | 3.9 mΩ - Enables <1 W conduction loss at 50 A, reducing heatsink requirements in compact modules. |
| ID Continuous @ TC = 125 °C | 66 A - Sustains high current in engine bay environments without derating below ambient-rated capacity. |
| EAS | 125 mJ - Withstands repetitive inductive switching energy in motor drives without avalanche failure. |
| RthJC | 1.4 °C/W - Allows direct mounting to metal-core PCBs or heatsinks for thermal path optimization in space-constrained layouts. |
| Qg @ VGS = 10 V | 58–90 nC - Balances switching speed and gate driver stress for 12 V supply-compatible drivers. |
| tr/tf | 10–20 ns / 8–15 ns - Supports clean edge transitions in high-frequency SMPS with minimal EMI generation. |
Pinout & Package
TO-252 (DPAK) surface-mount package with exposed drain-connected copper tab for low-inductance, high-current routing and thermal dissipation. Dimensions per Vishay document 64424: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), 2.28 mm pitch between gate and source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires <1.9 Ω gate resistance to limit ringing during 19–30 ns turn-on delay. |
| S (Source) | Reference node for gate drive and current return | Common reference for low-side switching; connects to PCB ground plane with minimum loop inductance. |
| D (Drain) | Main current output terminal | Internally bonded to exposed copper tab; must be soldered to large copper pour or heatsink for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including engine control units and electric power steering. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - critical for field reliability. |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in TO-252 footprint. |
| Body diode with trr = 50–100 ns | Enables use in synchronous buck topologies without external Schottky diode, reducing BOM count and layout complexity. |
| Junction temp. up to +175 °C | Permits placement near heat sources (e.g., exhaust manifolds) without thermal shutdown in under-hood modules. |
Applications
| Engine Control Unit (ECU) Power Stage | Electric Power Steering (EPS) Motor Driver |
|---|---|
Use Scenario: High-side or low-side switching of fuel injector solenoids and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling 12 V/24 V inductive loads with precise pulse-width modulation. Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating ensures operation near hot engine blocks. |
Use Scenario: Half-bridge leg in 12 V EPS motor inverter driving brushless DC assist motors. IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge delivering up to 66 A continuous phase current. Use Value: Fast tr/tf enables >50 kHz PWM for smooth torque control; low Qgd reduces shoot-through risk during dead-time transitions. |
| 48 V Mild Hybrid DC-DC Converter | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode in synchronous rectification stage. Use Value: Body diode trr ≤ 100 ns and low VSD = 0.83 V reduce reverse recovery loss and improve efficiency by ≥2.5 % over discrete diodes. |
Use Scenario: Isolated auxiliary power supply for OBC control circuitry, converting 400 V battery voltage to 12 V system rail. IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter operating at 100–200 kHz. Use Value: 60 V VDS with 2× margin handles reflected transients; RthJC = 1.4 °C/W allows convection-only cooling in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V, 220 A, RDS(on) = 2.2 mΩ @ 10 V, TO-263 package, higher current rating but larger footprint and no AEC-Q101 documentation in public datasheet. | Preferred for higher-current inverters where board space permits TO-263; unsuitable for space-constrained TO-252-replacement upgrades. | Select when peak current exceeds 100 A and thermal mass allows larger package; verify AEC-Q101 compliance separately if required. |
| IRF1404ZPBF | 40 V, 195 A, RDS(on) = 3.8 mΩ @ 10 V, TO-220AB package, lower VDS rating and non-automotive qualification. | Used in industrial 12 V supplies; lacks 60 V margin and 175 °C rating needed for automotive under-hood deployment. | Acceptable only in non-automotive 12 V systems with strict cost constraints; not a drop-in replacement due to voltage and qualification gaps. |
Compared with STL220N6F7AG and IRF1404ZPBF, SQD50034E_GE3 uniquely combines AEC-Q101 qualification, 60 V rating, TO-252 footprint, and guaranteed 175 °C operation - making it the only option among the three validated for engine bay–mounted automotive power stages requiring zero derating at full temperature.
Availability
SQD50034E_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering, and 48 V mild hybrid DC-DC conversion requiring stable component supply across long production lifecycles.
Supply support for SQD50034E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQD50034E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature switching in engine control, transmission, and ADAS subsystems.
FAQ
What is the maximum continuous drain current for SQD50034E_GE3 at 125 °C case temperature?
The maximum continuous drain current for SQD50034E_GE3 is 66 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the TO-252 package and is measured with the device mounted on a standard 1" square FR4 PCB. At higher ambient temperatures or reduced copper area, derating is required to maintain junction temperature ≤ 175 °C. SQD50034E_GE3 must be thermally coupled to a heatsink or large copper pour to sustain this current continuously.
Is SQD50034E_GE3 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQD50034E_GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision S18-1179-Rev. A. This qualification confirms it has passed stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - validating suitability for automotive powertrain, chassis, and safety-critical systems. SQD50034E_GE3 is approved for use in engine control units, electric power steering, and other under-hood applications where reliability over 15+ years is mandatory.
What is the typical gate charge (Qg) of SQD50034E_GE3, and how does it affect driver selection?
The typical total gate charge (Qg) of SQD50034E_GE3 is 58 nC at VGS = 10 V, with a maximum of 90 nC. This value determines the energy required to fully turn on the device and directly impacts gate driver sizing: a 1 A driver can switch SQD50034E_GE3 in ~90 ns, while slower drivers may increase switching losses. SQD50034E_GE3's Qg is compatible with common automotive gate drivers such as the TI UCC27531 or Infineon 1EDN7512B, provided gate resistance is tuned to balance speed and ringing.
Does SQD50034E_GE3 have an integrated body diode, and what are its key characteristics?
Yes, SQD50034E_GE3 includes a monolithic body diode with forward voltage VSD = 0.83 V (typical) at IF = 25 A and VGS = 0 V, reverse recovery time trr = 50–100 ns, and reverse recovery charge Qrr = 55–110 nC. These parameters enable SQD50034E_GE3 to serve as a synchronous rectifier in DC-DC converters, reducing conduction loss versus external Schottky diodes. The body diode is rated for pulsed current up to 320 A, matching the MOSFET's IDM rating.
What is the thermal resistance from junction to case (RthJC) for SQD50034E_GE3, and how should it be used in thermal design?
The junction-to-case thermal resistance (RthJC) for SQD50034E_GE3 is 1.4 °C/W, measured from die junction to the drain-connected copper tab. In thermal design, this value defines the minimum thermal path resistance achievable when the tab is soldered to a heatsink or metal-core PCB. To calculate junction temperature: TJ = TC + (Ptot × RthJC). For example, at 66 A and RDS(on) = 3.9 mΩ, Pcond ≈ 17 W → ΔT = 23.8 °C above case temperature. SQD50034E_GE3 requires low-thermal-resistance mounting to stay within its 175 °C limit.
SQD50034E_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50034E_GE3 FAQ
1.How can I place an order for SQD50034E_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50034E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50034E_GE3 reliable?
The price and inventory of SQD50034E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50034E_GE3 is usually 5 days.
3.What payment methods are accepted for SQD50034E_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50034E_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50034E_GE3?
SQD50034E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50034E_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50034E_GE3?
For technical support, including SQD50034E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50034E_GE3 requirements.
6.How does Aetrix verify that SQD50034E_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50034E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50034E_GE3 meets industry standards.
7.What is the process for return or replacement of SQD50034E_GE3?
All SQD50034E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50034E_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50034E_GE3 part is unused and in its original packaging.
Return procedure for SQD50034E_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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