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Vishay Siliconix SQD50034EL_GE3
- Part No.:
- SQD50034EL_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50034EL_GE3.pdf
- Description:
- MOSFET N-CH 60V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:1,059
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Product details
Overview
SQD50034EL from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 100 A continuous drain current at 25 °C, and 0.0040 Ω RDS(on) at VGS = 10 V. It serves as a high-current switching element in DC-DC converters, motor control inverters, and battery disconnect circuits operating up to 175 °C junction temperature.
For engineers reviewing the SQD50034EL datasheet, SQD50034EL pinout, SQD50034EL application, or SQD50034EL equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at 4.5 V (0.0052 Ω), 100 % UIS testing, TO-252 package thermal performance (RthJC = 1.4 °C/W), and body diode recovery characteristics (trr = 42–85 ns).
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and high avalanche ruggedness. Its gate charge profile (Qg = 60–90 nC, Qgd = 4.8 nC) supports efficient hard-switching in high-frequency power stages, while the integrated body diode enables synchronous rectification or freewheeling in half-bridge topologies.
The device is characterized across -55 °C to +175 °C, with RDS(on) increasing predictably with temperature (0.0077 Ω max at 175 °C, VGS = 10 V, ID = 20 A). Thermal design is supported by validated junction-to-case resistance (1.4 °C/W) and PCB-mount junction-to-ambient rating (50 °C/W on 1"² FR4).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ 10 V | 0.0040 Ω - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages |
| RDS(on) @ 4.5 V | 0.0052 Ω - Ensures robust turn-on with standard 5 V logic-level gate drivers |
| ID (cont.) | 100 A @ TC = 25 °C - Supports high-current loads such as starter relays or HVAC blowers |
| EAS | 115 mJ - Rated single-pulse avalanche energy ensures reliability during inductive switching transients |
| tr/tf | 7–15 ns - Fast switching transitions reduce switching losses in >100 kHz SMPS designs |
| VGS(th) | 1.5–2.5 V - Low threshold enables stable enhancement-mode operation with tight gate drive control |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for direct thermal coupling to PCB copper pour. Dimensions per Vishay Doc #64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives gate drive signal; requires ≤1.9 Ω gate resistance for optimal switching speed and ringing control |
| D (Drain) | High-side power input/output | Internally connected to exposed metal tab; must be soldered to large copper area for thermal management |
| S (Source) | Power return/reference node | Serves as local ground reference for gate drive; connects to source of high-side switch or low-side return path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including engine control, transmission, and ADAS power stages |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Delivers lowest RDS(on) × Qg figure-of-merit in TO-252 package for high-frequency efficiency |
| 175 °C maximum TJ | Enables operation in high-ambient environments without derating in compact enclosures |
| Low Ciss/Coss ratio | 4425 pF / 1989 pF supports ZVS/ZCS soft-switching implementation in resonant converters |
Applications
| Automotive DC-DC Converter | Electric Power Steering (EPS) Inverter |
|---|---|
|
Use Scenario: 12 V to 48 V bidirectional buck-boost converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved phase-leg configuration. Use Value: 0.0040 Ω RDS(on) minimizes conduction loss at 80 A peak, enabling >96 % efficiency at full load. |
Use Scenario: Three-phase inverter driving 300 W BLDC motor in column-assist EPS system. IC Role / Device Role / Timing Role: Low-side switching element with fast 7 ns rise time for precise PWM timing control. Use Value: 175 °C rating allows sustained 100 A pulsed current during steering assist without thermal shutdown. |
| 48 V Battery Disconnect Switch | Onboard Charger (OBC) Input Stage |
|
Use Scenario: Solid-state contactor replacing mechanical relay in 48 V battery management system. IC Role / Device Role / Timing Role: Single-pole, high-current main disconnect switch with integrated body diode for reverse polarity protection. Use Value: 115 mJ EAS withstands inrush current surges during hot-plug events without failure. |
Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end stage. IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor operating at 100 kHz with 50 A RMS current. Use Value: Low Qgd/Qg ratio (4.8/60 nC) reduces Miller-induced turn-on risk and improves gate drive stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | Higher RDS(on) (0.0048 Ω @ 10 V), same TO-252 package, no AEC-Q101 documentation in public datasheet | Targeted at industrial motor drives; lacks automotive qualification evidence | Prefer SQD50034EL for automotive programs requiring AEC-Q101 traceability and 175 °C operation |
| IRF1404ZLPbF | Higher RDS(on) (0.0049 Ω @ 10 V), TO-220 package, lower thermal performance (RthJC = 1.7 °C/W) | Designed for legacy through-hole power supplies; not optimized for surface-mount thermal management | Choose SQD50034EL when PCB space, thermal density, and automotive compliance are mandatory |
Compared with STL220N6F7 and IRF1404ZLPbF, the SQD50034EL delivers superior thermal resistance (1.4 °C/W), verified AEC-Q101 qualification, and tighter RDS(on) distribution-making it the preferred choice for space-constrained, high-reliability automotive power switching where junction temperature control and qualification evidence are critical.
Availability
SQD50034EL is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and 48 V battery management systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQD50034EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQD50034EL belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 12 V/48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQD50034EL at 125 °C case temperature?
The SQD50034EL supports 68 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation under sustained high-temperature conditions typical in engine bay environments. The SQD50034EL maintains reliable conduction performance even when ambient temperatures approach 105 °C.
Is SQD50034EL suitable for use with 5 V gate drive in automotive microcontroller applications?
Yes, the SQD50034EL is fully compatible with 5 V logic-level gate drive: its RDS(on) is specified at 0.0052 Ω with VGS = 4.5 V and ID = 15 A, ensuring strong enhancement-mode turn-on. The gate threshold voltage range (1.5–2.5 V) provides noise margin against spurious turn-on, making SQD50034EL appropriate for direct MCU GPIO or low-side driver interfacing in automotive modules.
Does SQD50034EL include integrated ESD protection on the gate terminal?
No, the SQD50034EL does not incorporate internal gate ESD protection structures. As stated in the datasheet, gate-source leakage (IGSS) is specified at ±100 nA with ±20 V applied - confirming absence of clamping diodes. External gate protection (e.g., 10 Ω series resistor + 12 V Zener to source) is recommended in systems exposed to board-level ESD per ISO 10605.
What is the body diode forward voltage of SQD50034EL at 25 A and room temperature?
The body diode forward voltage (VSD) of SQD50034EL is 0.81 V (typical) at IF = 25 A and VGS = 0 V, per the Specifications table. This low VSD reduces freewheeling losses in synchronous rectifiers and half-bridge configurations, and the diode is rated for 97 A continuous source current - matching the device's high-current capability.
How is thermal performance validated for SQD50034EL in PCB-mounted applications?
Thermal performance of SQD50034EL is validated using a standardized 1" × 1" FR4 PCB with 2 oz. copper on both sides (100 % coverage). Under this condition, RthJA is 50 °C/W and RthJC is 1.4 °C/W. These values are measured per JESD51-14 and documented in Vishay's thermal transient impedance curves - enabling accurate junction temperature prediction in real-world automotive PCB layouts.
SQD50034EL_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50034EL_GE3 FAQ
1.How can I place an order for SQD50034EL_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50034EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50034EL_GE3 reliable?
The price and inventory of SQD50034EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50034EL_GE3 is usually 5 days.
3.What payment methods are accepted for SQD50034EL_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50034EL_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50034EL_GE3?
SQD50034EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50034EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50034EL_GE3?
For technical support, including SQD50034EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50034EL_GE3 requirements.
6.How does Aetrix verify that SQD50034EL_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50034EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50034EL_GE3 meets industry standards.
7.What is the process for return or replacement of SQD50034EL_GE3?
All SQD50034EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50034EL_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50034EL_GE3 part is unused and in its original packaging.
Return procedure for SQD50034EL_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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