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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50N04-09H-GE3

Name: SQD50N04-09H-GE3
Brand: Vishay Siliconix
SKU: SQD50N04-09H-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50N04-09H-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50N04-09H-GE3.pdf

Description:: MOSFET N-CH 40V 50A TO252

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Product details

Overview

SQD50N04-09H-GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 9.0 mΩ R_DS(on) at V_GS = 10 V and I_D = 20 A. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-efficiency DC-DC converters and motor control stages in automotive body electronics.

For engineers reviewing the SQD50N04-09H-GE3 datasheet, SQD50N04-09H-GE3 pinout, SQD50N04-09H-GE3 application, or SQD50N04-09H-GE3 equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust UIS capability (39 mJ), 100 % R_g and avalanche testing, and halogen-free, RoHS-compliant construction per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (3.4–5.0 V) ensures reliable turn-on with standard logic-level drivers, while the 51 nC typical total gate charge supports efficient PWM operation up to several hundred kHz.

The device integrates a robust intrinsic body diode with 0.9–1.5 V forward voltage at 30 A and zero-recovery charge specification, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V, I_D = 20 A	0.009 Ω - Enables <1 W conduction loss at 50 A, critical for thermal management in compact PCB layouts.
I_D (continuous, T_C = 25 °C)	50 A - Supports high-current loads such as HVAC actuators, seat motors, and LED headlamp drivers.
E_AS (single-pulse avalanche)	39 mJ - Provides ruggedness against inductive switching spikes without snubbers in relay or solenoid drive circuits.
T_J max	+175 °C - Meets under-hood temperature requirements for engine bay and transmission control modules.
Q_g (total gate charge)	51 nC typical - Balances switching speed and gate driver power loss for 200–500 kHz DC-DC operation.
R_thJC	1.8 °C/W - Enables direct heatsinking via drain-tab mounting to reduce junction-to-case thermal resistance.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab & Pin 2)	Main current path output / heat sink interface	Electrically and thermally connected to exposed copper pad; requires soldered thermal pad area on PCB.
Gate (Pin 1)	Control input for channel conduction	High-impedance MOS gate requiring <2 V_GS(th) min to initiate turn-on; sensitive to ESD.
Source (Pin 3)	Reference node for gate drive and current return	Common return path for load current; ties to system ground or low-side switch node in half-bridge.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, humidity bias, and mechanical shock per JESD47.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no batch sampling.
TrenchFET® architecture	Reduces specific on-resistance by >30 % vs. planar MOSFETs at same die size, improving power density.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC - suitable for Tier-1 automotive supply chain traceability.
Low R_thJA (50 °C/W)	Enables >27 W power dissipation on standard 1" × 1" FR-4 PCB - reduces need for external heatsinks in space-constrained modules.

Applications

Automotive Body Control Module (BCM)	12 V DC-DC Buck Converter
Use Scenario: Switching power distribution to door locks, window lifts, and mirror adjusters in modern BCMs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 20–40 A resistive/inductive loads. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained actuation; 175 °C rating ensures reliability near fuse boxes.	Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V step-down converters for infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating at 300–500 kHz. Use Value: 51 nC Q_g and 0.009 Ω R_DS(on) jointly enable >95 % efficiency at 10–20 A output current.
Engine Cooling Fan Driver	H-Bridge Motor Control (Seat/Mirror)
Use Scenario: PWM-controlled cooling fan in engine compartment with ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving brushed DC fan motor. Use Value: 39 mJ E_AS withstands back-EMF spikes during abrupt PWM shutdown; 175 °C T_J max prevents thermal shutdown.	Use Scenario: Bidirectional drive of small DC motors in power seats and side mirrors. IC Role / Device Role / Timing Role: One quadrant switch in H-bridge; paired with complementary high-side device. Use Value: Fast 14 ns rise time and 8 ns fall time support precise 20–100 Hz position control with minimal shoot-through risk.

Automotive Body Control Module (BCM)

12 V DC-DC Buck Converter

Use Scenario: Switching power distribution to door locks, window lifts, and mirror adjusters in modern BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 20–40 A resistive/inductive loads.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained actuation; 175 °C rating ensures reliability near fuse boxes.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V step-down converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating at 300–500 kHz.

Use Value: 51 nC Q_g and 0.009 Ω R_DS(on) jointly enable >95 % efficiency at 10–20 A output current.

Engine Cooling Fan Driver

H-Bridge Motor Control (Seat/Mirror)

Use Scenario: PWM-controlled cooling fan in engine compartment with ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving brushed DC fan motor.

Use Value: 39 mJ E_AS withstands back-EMF spikes during abrupt PWM shutdown; 175 °C T_J max prevents thermal shutdown.

Use Scenario: Bidirectional drive of small DC motors in power seats and side mirrors.

IC Role / Device Role / Timing Role: One quadrant switch in H-bridge; paired with complementary high-side device.

Use Value: Fast 14 ns rise time and 8 ns fall time support precise 20–100 Hz position control with minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N4LF6AG	R_DS(on) = 3.2 mΩ @ 10 V (lower), but rated only to 150 °C T_J; TO-263 package with larger footprint.	Preferred where ultra-low conduction loss is prioritized over under-hood temperature margin.	Select STL130N4LF6AG only if board layout accommodates TO-263 and junction temperature remains ≤150 °C.
IRF7470PBF	R_DS(on) = 11.5 mΩ @ 10 V (higher); not AEC-Q101 qualified; SO-8 package with higher R_thJA (62 °C/W).	Suitable for non-automotive industrial controls where qualification and thermal performance are less stringent.	Choose IRF7470PBF only for cost-sensitive, non-automotive designs with adequate derating margin.

Compared with STL130N4LF6AG and IRF7470PBF, SQD50N04-09H-GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, and 9 mΩ R_DS(on) in TO-252 - making it optimal for space-constrained, high-temperature automotive power switches where qualification and thermal headroom are mandatory.

Availability

SQD50N04-09H-GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and engine cooling fan drivers requiring stable component supply across extended production lifecycles.

Supply support for SQD50N04-09H-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and automotive-grade validation.

The SQD50N04-09H-GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems.

FAQ

What is the maximum continuous drain current for SQD50N04-09H-GE3 at 125 °C case temperature?

The SQD50N04-09H-GE3 supports 40 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature limit under real-world PCB thermal conditions.

Is SQD50N04-09H-GE3 suitable for synchronous rectification in a 400 kHz buck converter?

Yes, SQD50N04-09H-GE3 is suitable: its 51 nC total gate charge and 14 ns rise time enable efficient switching at 400 kHz, while its 0.009 Ω R_DS(on) minimizes conduction loss. The device's body diode forward voltage (0.9–1.5 V) and lack of reverse recovery charge further support clean synchronous operation without cross-conduction risk.

Does SQD50N04-09H-GE3 have a guaranteed avalanche energy rating?

Yes, SQD50N04-09H-GE3 has a guaranteed single-pulse avalanche energy rating of 39 mJ (E_AS) with L = 0.1 mH, verified per JEDEC JESD24-1. This rating applies under specified test conditions and confirms ruggedness against inductive switching transients in motor and solenoid drive applications.

What is the gate-source leakage current specification for SQD50N04-09H-GE3?

The gate-source leakage current (I_GSS) for SQD50N04-09H-GE3 is specified as ±100 nA maximum at V_GS = ±20 V and T_C = 25 °C. This low leakage ensures stable gate bias and minimal power loss in high-impedance gate drive networks.

How is the drain terminal electrically configured in the TO-252 package of SQD50N04-09H-GE3?

In the SQD50N04-09H-GE3, the drain is connected to both the internal die and the exposed metal tab of the TO-252 package. This dual connection serves as the primary thermal path and must be soldered to a large copper pour for effective heat dissipation - and also functions as the high-current output node in circuit layout.

SQD50N04-09H-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50N04-09H-GE3 FAQ

1.How can I place an order for SQD50N04-09H-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50N04-09H-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50N04-09H-GE3 reliable?

The price and inventory of SQD50N04-09H-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04-09H-GE3 is usually 5 days.

3.What payment methods are accepted for SQD50N04-09H-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04-09H-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50N04-09H-GE3?

SQD50N04-09H-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50N04-09H-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50N04-09H-GE3?

For technical support, including SQD50N04-09H-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04-09H-GE3 requirements.

6.How does Aetrix verify that SQD50N04-09H-GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50N04-09H-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04-09H-GE3 meets industry standards.

7.What is the process for return or replacement of SQD50N04-09H-GE3?

All SQD50N04-09H-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04-09H-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50N04-09H-GE3 part is unused and in its original packaging.

Return procedure for SQD50N04-09H-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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