My Inquiry
My Account
Vishay Siliconix SQD50N04-4M5L_GE3
- Part No.:
- SQD50N04-4M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50N04-4M5L_GE3.pdf
- Description:
- MOSFET N-CH 40V 50A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,114
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQD50N04-4M5L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and 3.5 mΩ RDS(on) at VGS = 10 V. It features AEC-Q101 qualification, 100 % Rg and UIS testing, and TO-252 (DPAK) package with drain-connected tab for enhanced thermal performance in high-current motor control and DC-DC converter stages.
For engineers reviewing the SQD50N04-4M5L_GE3 datasheet, SQD50N04-4M5L_GE3 pinout, SQD50N04-4M5L_GE3 application, or SQD50N04-4M5L_GE3 equivalent, key selection criteria include its 4.5 V gate drive capability (4.2 mΩ RDS(on)), 175 °C maximum junction temperature, low 1.1 °C/W junction-to-case thermal resistance, and robust avalanche energy rating of 151 mJ - critical for automotive load switching and regenerative braking circuits.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage range (1.5–2.5 V) ensures stable turn-on under battery voltage variation, while the 85 nC typical total gate charge supports efficient PWM operation up to 100 kHz in synchronous buck converters.
The device integrates a robust body diode with 0.9–1.5 V forward voltage at 30 A and supports pulsed drain currents up to 200 A. Thermal design is enabled by the TO-252 package's low RthJC (1.1 °C/W) and validated PCB-mount RthJA (50 °C/W on 1"² FR-4), making it suitable for space-constrained under-hood applications requiring high reliability at elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 24 V nominal automotive systems including load-dump transients. |
| RDS(on) @ VGS = 10 V | 3.5 mΩ - Enables <1.8 W conduction loss at 50 A, reducing heatsink requirements in high-current switches. |
| RDS(on) @ VGS = 4.5 V | 4.2 mΩ - Ensures full enhancement with standard 5 V logic-level microcontrollers or gate drivers. |
| ID (continuous) | 50 A at TC = 25 °C - Supports high-power solenoid, pump, and fan drivers without derating at moderate case temperatures. |
| EAS | 151 mJ - Withstands repetitive inductive switching events in motor drives without failure. |
| TJ max | +175 °C - Meets under-hood thermal requirements per AEC-Q101, enabling operation near engine blocks or exhaust systems. |
| RthJC | 1.1 °C/W - Allows direct thermal coupling to heatsinks or metal-core PCBs for efficient power dissipation. |
Pinout & Package
TO-252AA (DPAK) package with exposed drain tab thermally and electrically connected to the drain terminal. Standard 3-pin surface-mount outline with gull-wing leads; drain tab must be soldered to large copper area for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control input | Receives gate drive signal; requires ≤2 Ω gate resistance to limit ringing and ensure 9–11 ns turn-on delay. |
| Drain (D) | High-side or low-side power path | Connected internally to exposed copper tab; must be routed to high-current traces and thermal pad for heat transfer. |
| Source (S) | Reference node / return path | Serves as common reference for gate drive and current sensing; ties to ground or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity, and mechanical shock per stress test requirements. |
| 100 % Rg tested | Each unit verified for gate resistance (1–3 Ω), ensuring consistent switching speed and EMI behavior across production lots. |
| 100 % UIS tested | Every device subjected to unclamped inductive switching stress, guaranteeing minimum 151 mJ avalanche energy capability. |
| Low RDS(on) at 4.5 V | 4.2 mΩ enables direct drive from 5 V MCU GPIO or low-voltage gate drivers without level-shifting circuitry. |
| Drain-connected tab | Exposes drain potential to PCB copper, enabling dual-purpose thermal management and high-current routing in compact layouts. |
Applications
| Engine Cooling Fan Control | Automotive HVAC Blower Motor |
|---|---|
Use Scenario: PWM-controlled 24 V DC blower motor driving airflow through vehicle cabin heat exchangers. IC Role / Device Role / Timing Role: Low-side switching element handling up to 50 A peak current during startup and stall conditions. Use Value: 4.2 mΩ RDS(on) at 4.5 V gate drive minimizes conduction loss and self-heating during extended low-speed operation, extending motor life and reducing thermal stress on PCB. | Use Scenario: High-reliability 12 V radiator fan driver operating continuously under hood temperatures up to 125 °C ambient. IC Role / Device Role / Timing Role: High-current N-channel switch in half-bridge configuration with external freewheeling diode. Use Value: 175 °C TJ max and AEC-Q101 qualification ensure functional safety compliance and long-term stability in harsh thermal environments. |
| 12 V/24 V DC-DC Converter Primary Switch | Electric Power Steering (EPS) Assist Motor Driver |
Use Scenario: Synchronous buck converter stepping down 24 V battery to 5 V/3.3 V for ADAS domain controllers. IC Role / Device Role / Timing Role: High-efficiency primary-side power switch operating at 200–500 kHz with 85 nC total gate charge. Use Value: Low Crss (250–300 pF) and fast 39–47 ns turn-off delay reduce switching losses and improve light-load efficiency. | Use Scenario: H-bridge leg switch delivering assist torque via 48 V EPS motor during steering maneuvers. IC Role / Device Role / Timing Role: Robust N-channel MOSFET handling bidirectional 50 A pulses with integrated body diode recovery. Use Value: 151 mJ single-pulse avalanche energy rating protects against inductive kickback during sudden motor current interruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A ID, 0.75 mΩ RDS(on) @ 10 V, PowerFLAT 5x6 package, higher current but larger footprint and no AEC-Q101 certification. | Targeted at industrial motor drives; lacks automotive qualification and thermal transient validation for under-hood use. | Select when higher current headroom is needed and AEC-Q101 is not required; verify PCB layout compatibility with 5x6 mm footprint. |
| IRF3205PbF | 55 V, 110 A ID, 8.0 mΩ RDS(on) @ 10 V, TO-220 package, non-automotive, higher RDS(on) and slower switching (Qg = 120 nC). | General-purpose industrial switching; unsuitable for space-constrained or high-frequency automotive designs. | Consider only for cost-sensitive non-automotive prototypes where thermal margin and frequency response are secondary. |
Compared with STL220N4F7AG and IRF3205PbF, the SQD50N04-4M5L_GE3 delivers optimal balance of automotive qualification, low 4.5 V RDS(on), compact TO-252 footprint, and proven avalanche ruggedness - making it the preferred choice for production-grade 24 V automotive power stages where reliability and thermal density are critical.
Availability
SQD50N04-4M5L_GE3 is available at Aetrix Electronics and suitable for engine cooling fan control, automotive HVAC blower motor drives, and 12 V/24 V DC-DC converter primary switching requiring stable component supply across automotive OEM and Tier-1 production programs.
Supply support for SQD50N04-4M5L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQD50N04-4M5L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V and 24 V vehicle subsystems including body electronics, powertrain auxiliaries, and ADAS power supplies.
FAQ
What is the maximum gate-source voltage rating for SQD50N04-4M5L_GE3?
The SQD50N04-4M5L_GE3 has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp VGS within –10 V to +15 V during transients, especially in automotive environments with load dump or reverse battery conditions. The SQD50N04-4M5L_GE3 datasheet specifies this absolute maximum rating under all operating conditions.
Is SQD50N04-4M5L_GE3 suitable for 5 V logic-level gate drive?
Yes, SQD50N04-4M5L_GE3 is fully compatible with 5 V logic-level gate drive. Its RDS(on) is specified at 4.2 mΩ with VGS = 4.5 V and ID = 20 A, confirming strong enhancement at standard microcontroller output levels. The gate threshold voltage range (1.5–2.5 V) provides noise margin, and the 85 nC typical total gate charge allows clean switching with low-impedance 5 V drivers - a key advantage over older MOSFETs requiring 10 V gate drive.
Does SQD50N04-4M5L_GE3 have an integrated body diode, and what is its forward voltage?
Yes, SQD50N04-4M5L_GE3 includes an integrated body diode with a forward voltage of 0.9–1.5 V at IF = 30 A and VGS = 0 V. This diode supports freewheeling current in inductive loads like motors and solenoids. Its recovery characteristics are optimized for hard-switching applications, and the device is 100 % UIS tested to ensure robustness during diode commutation events - a critical feature for SQD50N04-4M5L_GE3 in automotive motor control.
What is the thermal resistance from junction to case (RthJC) for SQD50N04-4M5L_GE3, and how should it be used in thermal design?
The junction-to-case thermal resistance (RthJC) for SQD50N04-4M5L_GE3 is 1.1 °C/W, measured from die junction to the drain-connected tab. In thermal design, this value must be combined with the thermal resistance of the heatsink or PCB copper area attached to the tab. For example, with a 2.0 °C/W heatsink interface, total RthJA ≈ 3.1 °C/W, allowing ~43 W power dissipation at ΔT = 135 °C (175 °C TJ – 40 °C ambient). This RthJC value is validated per JEDEC JESD51-14 and applies directly to SQD50N04-4M5L_GE3 in TO-252 mounting configurations.
How does the AEC-Q101 qualification impact the use of SQD50N04-4M5L_GE3 in automotive designs?
The AEC-Q101 qualification confirms that SQD50N04-4M5L_GE3 has passed accelerated stress tests for temperature cycling, humidity, mechanical shock, and high-temperature operating life - all required for automotive under-hood and cabin applications. This qualification reduces validation effort for Tier-1 suppliers and OEMs, as SQD50N04-4M5L_GE3 meets baseline reliability standards before integration into vehicle ECUs, eliminating need for redundant qualification testing in most production programs.
SQD50N04-4M5L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50N04-4M5L_GE3 FAQ
1.How can I place an order for SQD50N04-4M5L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50N04-4M5L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50N04-4M5L_GE3 reliable?
The price and inventory of SQD50N04-4M5L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04-4M5L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD50N04-4M5L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04-4M5L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50N04-4M5L_GE3?
SQD50N04-4M5L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50N04-4M5L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50N04-4M5L_GE3?
For technical support, including SQD50N04-4M5L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04-4M5L_GE3 requirements.
6.How does Aetrix verify that SQD50N04-4M5L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50N04-4M5L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04-4M5L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD50N04-4M5L_GE3?
All SQD50N04-4M5L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04-4M5L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50N04-4M5L_GE3 part is unused and in its original packaging.
Return procedure for SQD50N04-4M5L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQD50N04-4M5L_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
