My Inquiry
My Account
Vishay Siliconix SQD50N04_4M5LT4GE3
- Part No.:
- SQD50N04_4M5LT4GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50N04_4M5LT4GE3.pdf
- Description:
- MOSFET N-CH 40V 50A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,824
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQD50N04_4M5LT4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and RDS(on) of 3.5 mΩ at VGS = 10 V. It features AEC-Q101 qualification, 100 % Rg and UIS testing, and TO-252 (DPAK) package with drain-connected tab for low thermal resistance - deployed in high-reliability 12 V automotive power distribution systems.
For engineers reviewing the SQD50N04_4M5LT4GE3 datasheet, SQD50N04_4M5LT4GE3 pinout, SQD50N04_4M5LT4GE3 application, or SQD50N04_4M5LT4GE3 equivalent, key selection criteria include its 175 °C junction rating, 4.5 V logic-level gate drive capability, avalanche energy rating of 151 mJ, and compliance with automotive thermal and reliability requirements per AEC-Q101.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in DC-DC converters and load-switching applications. Its gate threshold voltage range (1.5–2.5 V) enables robust turn-on with 4.5 V microcontroller outputs, while the 85–130 nC total gate charge supports efficient PWM control up to ~100 kHz without excessive driver loss.
The device integrates a co-packaged body diode with 0.9–1.5 V forward voltage at 30 A, suitable for freewheeling in synchronous rectifier configurations. Thermal design is enabled by RthJC = 1.1 °C/W and RthJA = 50 °C/W (on 1"² FR-4 PCB), allowing 45 W dissipation at TC = 125 °C - critical for under-hood engine control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 3.5 mΩ - Enables <1.8 W conduction loss at 50 A, reducing heatsink requirements in high-current switches. |
| RDS(on) @ VGS = 4.5 V | 4.2 mΩ - Ensures full enhancement with standard 4.5 V logic drivers, eliminating need for gate boosters. |
| ID (Continuous) | 50 A at TC = 25 °C - Supports high-power loads such as fuel pumps, radiator fans, and solenoid drivers. |
| EAS | 151 mJ - Withstands single-pulse inductive energy from relay or motor turn-off without failure. |
| TJ Range | −55 to +175 °C - Certified for under-hood operation in extreme ambient conditions per AEC-Q101. |
| Qg | 85–130 nC - Determines gate driver current requirement; enables efficient 50–100 kHz switching with ≤2 A peak driver capability. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for direct thermal coupling to PCB copper pour. Dimensions per Vishay document 64424: 6.07 × 6.54 × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side return path; connects to ground or current-sense shunt for monitoring. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <100 nA leakage; driven via RC-filtered microcontroller output. |
| Pin 3 (Drain) | Power output (D) | Internally bonded to exposed metal tab - must be connected to high-current trace or thermal pad for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including temperature cycling, HTRB, and UHAST - no derating needed for passenger vehicle ECUs. |
| 100 % Rg tested | Each unit verified for gate resistance (1–3 Ω), ensuring consistent switching speed and EMI profile across production lots. |
| Drain-connected tab | Enables direct thermal interface to PCB copper; achieves RthJC = 1.1 °C/W - reduces junction temperature rise by >40 % vs. non-tab packages. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) than planar MOSFETs at same die size, improving power density in space-constrained modules. |
| UIS tested | Every device subjected to unclamped inductive switching stress - guarantees robustness against inductive kickback in motor drives. |
Applications
| Automotive Body Control Module | Engine Management System |
|---|---|
Use Scenario: High-side power switching for HVAC blower motors and door lock actuators in BCMs. IC Role / Device Role / Timing Role: N-channel MOSFET used in high-side configuration with charge pump gate driver to supply 12 V loads. Use Value: 175 °C TJ rating ensures uninterrupted operation during prolonged engine-off cabin heating cycles. |
Use Scenario: Low-side switching of fuel injectors and ignition coils in engine control units. IC Role / Device Role / Timing Role: Fast-switching power switch controlling precise current pulses to electromagnetic actuators. Use Value: 151 mJ EAS rating prevents failure during coil de-energization transients, eliminating need for external snubbers. |
| Electric Power Steering (EPS) | 12 V DC-DC Converter |
Use Scenario: Phase-leg switching in EPS motor inverter stages operating at 12 V bus. IC Role / Device Role / Timing Role: Half-bridge low-side switch handling bidirectional motor current up to 50 A peak. Use Value: 4.2 mΩ RDS(on) at 4.5 V gate drive enables direct MCU GPIO control without level-shifting circuitry. |
Use Scenario: Synchronous rectification in buck converter supplying 5 V/3.3 V rails for ADAS sensors. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency above 3 A load. Use Value: 0.9–1.5 V VSD forward voltage and low Qrr minimize reverse recovery losses versus discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A rated, RDS(on) = 1.6 mΩ @ 10 V, PowerFLAT 5×6 package, higher current but larger footprint. | Targeted at higher-power EPS inverters where board area permits larger package and thermal mass. | Select when >100 A peak current required and TO-252 layout cannot accommodate parallel devices. |
| IRF7470PBF | 40 V, 50 A, RDS(on) = 4.5 mΩ @ 10 V, SO-8 package, no exposed drain tab, RthJA = 62 °C/W. | Suitable for non-automotive industrial controls where AEC-Q101 is not mandated and thermal budget allows higher RthJA. | Choose only for cost-sensitive non-automotive designs where 1.0 mΩ higher RDS(on) and 12 °C/W higher RthJA are acceptable. |
Compared with STL220N4F7AG and IRF7470PBF, the SQD50N04_4M5LT4GE3 delivers optimal balance of AEC-Q101 compliance, TO-252 thermal performance, and 4.5 V logic compatibility - making it the preferred choice for space-constrained, thermally demanding automotive modules requiring single-device 50 A capability.
Availability
SQD50N04_4M5LT4GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine management systems, electric power steering units, and 12 V DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQD50N04_4M5LT4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD50N04_4M5LT4GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum junction temperature rating for SQD50N04_4M5LT4GE3?
The SQD50N04_4M5LT4GE3 has a specified operating junction temperature range of −55 °C to +175 °C. This 175 °C maximum rating is validated per AEC-Q101 and enables deployment in under-hood automotive environments where ambient temperatures exceed 125 °C. The device maintains RDS(on) stability and UIS robustness throughout this full range, as confirmed in Vishay document 70623.
Is SQD50N04_4M5LT4GE3 suitable for 4.5 V gate drive applications?
Yes, the SQD50N04_4M5LT4GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 4.2 mΩ at ID = 20 A and VGS = 4.5 V. Its gate threshold voltage range (1.5–2.5 V) ensures reliable turn-on with standard 4.5 V microcontroller I/O, eliminating the need for gate voltage boosting circuits in automotive body control and lighting modules.
Does SQD50N04_4M5LT4GE3 have avalanche capability?
Yes, the SQD50N04_4M5LT4GE3 is 100 % tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy (EAS) of 151 mJ at TJ = 25 °C. This capability is critical for automotive inductive load switching (e.g., fuel injectors, solenoids) where voltage spikes must be absorbed internally without external clamping components.
What is the thermal resistance from junction to case for SQD50N04_4M5LT4GE3?
The junction-to-case (drain) thermal resistance (RthJC) of SQD50N04_4M5LT4GE3 is 1.1 °C/W, measured per JEDEC standards with the drain tab directly attached to a cold plate. This low value is enabled by the TO-252AA package's exposed drain tab and is essential for dissipating up to 45 W at TC = 125 °C in engine control applications.
Is SQD50N04_4M5LT4GE3 RoHS and AEC-Q101 compliant?
Yes, SQD50N04_4M5LT4GE3 is both RoHS-compliant (lead-free and halogen-free) and AEC-Q101 qualified. The "GE3" suffix denotes Vishay's lead-free, halogen-free packaging, and qualification data per AEC-Q101 - including HTGB, HTRB, and temperature cycling - is documented in Vishay specification 70623.
SQD50N04_4M5LT4GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50N04_4M5LT4GE3 FAQ
1.How can I place an order for SQD50N04_4M5LT4GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50N04_4M5LT4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50N04_4M5LT4GE3 reliable?
The price and inventory of SQD50N04_4M5LT4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04_4M5LT4GE3 is usually 5 days.
3.What payment methods are accepted for SQD50N04_4M5LT4GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04_4M5LT4GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50N04_4M5LT4GE3?
SQD50N04_4M5LT4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50N04_4M5LT4GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50N04_4M5LT4GE3?
For technical support, including SQD50N04_4M5LT4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04_4M5LT4GE3 requirements.
6.How does Aetrix verify that SQD50N04_4M5LT4GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50N04_4M5LT4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04_4M5LT4GE3 meets industry standards.
7.What is the process for return or replacement of SQD50N04_4M5LT4GE3?
All SQD50N04_4M5LT4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04_4M5LT4GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50N04_4M5LT4GE3 part is unused and in its original packaging.
Return procedure for SQD50N04_4M5LT4GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQD50N04_4M5LT4GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
