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Vishay Siliconix SQD50N04-5M6_GE3
- Part No.:
- SQD50N04-5M6_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50N04-5M6_GE3.pdf
- Description:
- MOSFET N-CH 40V 50A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,368
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Product details
Overview
SQD50N04-5M6_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 50 A continuous drain current at TC = 25 °C, and RDS(on) of 5.6 mΩ at VGS = 10 V and ID = 20 A. It features drain-connected tab in TO-252 package, AEC-Q101 qualification, and 175 °C maximum junction temperature - deployed in high-reliability 12 V automotive power distribution systems.
For engineers reviewing the SQD50N04-5M6_GE3 datasheet, SQD50N04-5M6_GE3 pinout, SQD50N04-5M6_GE3 application, or SQD50N04-5M6_GE3 equivalent, key selection criteria include its low RDS(on) at elevated temperature, 100 % Rg and UIS tested robustness, thermal resistance (RthJC = 2.1 °C/W), and compliance with automotive stress-test requirements.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (2.5–3.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the 55–85 nC total gate charge supports efficient PWM control in DC–DC converters and motor drives.
The device integrates a body diode with forward voltage of 0.85–1.5 V at IF = 30 A and VGS = 0 V, and exhibits avalanche energy rating of 80 mJ (single-pulse, L = 0.1 mH). Thermal design is enabled by low junction-to-case resistance (2.1 °C/W) and defined PCB-mount thermal impedance (RthJA = 50 °C/W on 1"² FR-4).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports 12 V automotive battery systems with margin against load-dump transients. |
| RDS(on) @ 10 V | 5.6 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency power switches. |
| ID (Cont.) @ 25 °C | 50 A - Rated for sustained current in engine control units and HVAC blower drivers. |
| TJ (Max) | +175 °C - Meets under-hood thermal requirements per AEC-Q101 Grade 0. |
| Qg (Total) | 55–85 nC - Determines gate drive power and switching speed in 20–100 kHz applications. |
| EAS | 80 mJ - Withstands single-pulse inductive energy without failure in relay replacement circuits. |
| RthJC | 2.1 °C/W - Enables direct heatsinking via drain-tab mounting for compact thermal management. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab, gull-wing leads. Dimensions per Vishay document 64424: D = 6.0–6.2 mm, E = 6.4–6.7 mm, H = 9.4–10.4 mm, tab area ~4.1 × 4.3 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives gate drive signal; requires ≤ ±20 V bias; input capacitance Ciss = 3040–4000 pF affects driver sizing. |
| D (Drain) | Main power output terminal | Connected internally to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground. |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; source inductance impacts switching stability and dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 5.6 mΩ RDS(on) in TO-252 - 30 % lower than planar equivalents at same die size and voltage class. |
| AEC-Q101 qualified | Validated for automotive use including HTOL, temperature cycling, and UHAST - required for powertrain and chassis modules. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance (0.5–4.5 Ω) and unclamped inductive switching - ensures robustness in real-world fault conditions. |
| Drain-connected tab | Enables low-thermal-resistance path to heatsink (RthJC = 2.1 °C/W), reducing junction temperature rise by >25 °C vs. non-tab packages. |
| 175 °C operation | Supports placement near hot components (e.g., exhaust manifolds, inverters) without derating beyond datasheet limits. |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive HVAC Blower Driver |
|---|---|
Use Scenario: High-side switching of fuel injector solenoids and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling 12 V loads with fast turn-on/turn-off (td(on) = 9–16 ns, tf = 5–10 ns). Use Value: Low RDS(on) minimizes heat generation during extended duty cycles; 175 °C rating allows placement inside sealed ECU housings. |
Use Scenario: PWM-controlled DC motor drive for cabin air circulation fans in passenger vehicles. IC Role / Device Role / Timing Role: Low-side switch modulating motor current up to 50 A peak with 20–50 kHz switching frequency. Use Value: 85 nC max Qg enables efficient gate driving with integrated half-bridge controllers; body diode handles freewheeling current. |
| Body Control Module (BCM) Power Distribution | Start-Stop System Solenoid Driver |
Use Scenario: Centralized 12 V power routing for lighting, door locks, and window lifters in BCMs. IC Role / Device Role / Timing Role: High-current electronic fuse replacing mechanical relays; supports load dump protection. Use Value: 80 mJ EAS withstands inductive kickback from multiple parallel loads; AEC-Q101 ensures long-term field reliability. |
Use Scenario: Driving starter solenoid engagement coil during engine restart in 12 V micro-hybrid systems. IC Role / Device Role / Timing Role: High-pulse-current switch delivering 200 A peak (IDM) for <300 μs pulses. Use Value: Pulse-rated 200 A capability meets ISO 16750-2 load dump and cranking surge requirements without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N4LF6AG | RDS(on) = 3.2 mΩ @ 10 V (lower), but TO-263 package (larger footprint); TJ max = 175 °C; Qg = 105 nC (higher). | Better conduction efficiency but demands larger PCB area and higher gate drive power; suited for space-tolerant, ultra-low-loss designs. | Select STL120N4LF6AG only if layout allows TO-263 and gate driver can supply >100 nC per cycle. |
| IRF7470PBF | RDS(on) = 6.5 mΩ @ 10 V (slightly higher); SO-8 package (no drain tab); RthJC not specified; AEC-Q101 not claimed. | Limited thermal performance and no automotive qualification - acceptable only for non-safety-critical 12 V accessory circuits. | IRF7470PBF is not recommended for AEC-Q101–mandated applications; use only in cost-sensitive, non-automotive industrial controls. |
Compared with STL120N4LF6AG and IRF7470PBF, the SQD50N04-5M6_GE3 delivers optimal balance of low RDS(on), proven automotive qualification, TO-252 thermal efficiency, and moderate gate charge - making it the preferred choice for space-constrained, thermally demanding automotive power switches.
Availability
SQD50N04-5M6_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine control, HVAC actuation, and start-stop system design requiring stable component supply across multi-year production programs.
Supply support for SQD50N04-5M6_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD50N04-5M6_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where reliability and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for SQD50N04-5M6_GE3 at 125 °C case temperature?
The SQD50N04-5M6_GE3 supports 45 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects increased channel resistance at elevated temperature and ensures safe operation within thermal limits when mounted on appropriate PCB copper area or heatsink.
Is SQD50N04-5M6_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQD50N04-5M6_GE3 is AEC-Q101 qualified. Per Vishay documentation, this includes stress testing for high-temperature operating life (HTOL), temperature cycling, unbiased highly accelerated stress test (UHAST), and electrostatic discharge (HBM and CDM), confirming suitability for automotive power applications.
Does SQD50N04-5M6_GE3 have a built-in body diode, and what is its forward voltage?
Yes, SQD50N04-5M6_GE3 includes an integral body diode. Its forward voltage (VSD) is 0.85–1.5 V at IF = 30 A and VGS = 0 V, measured at TA = 25 °C. This diode enables freewheeling current paths in inductive load switching, such as motor or solenoid control.
What is the gate threshold voltage range for SQD50N04-5M6_GE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SQD50N04-5M6_GE3 is 2.5–3.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers, while maintaining noise immunity in electrically noisy automotive environments.
Can SQD50N04-5M6_GE3 be used in synchronous rectification applications?
No - SQD50N04-5M6_GE3 is optimized as a unidirectional high-side or low-side switch, not as a synchronous rectifier. Its body diode recovery characteristics and lack of specified reverse recovery time (trr) make it unsuitable for high-frequency AC-DC or DC-DC converter secondary-side rectification.
SQD50N04-5M6_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 85 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50N04-5M6_GE3 FAQ
1.How can I place an order for SQD50N04-5M6_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50N04-5M6_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50N04-5M6_GE3 reliable?
The price and inventory of SQD50N04-5M6_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04-5M6_GE3 is usually 5 days.
3.What payment methods are accepted for SQD50N04-5M6_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04-5M6_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50N04-5M6_GE3?
SQD50N04-5M6_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50N04-5M6_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50N04-5M6_GE3?
For technical support, including SQD50N04-5M6_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04-5M6_GE3 requirements.
6.How does Aetrix verify that SQD50N04-5M6_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50N04-5M6_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04-5M6_GE3 meets industry standards.
7.What is the process for return or replacement of SQD50N04-5M6_GE3?
All SQD50N04-5M6_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04-5M6_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50N04-5M6_GE3 part is unused and in its original packaging.
Return procedure for SQD50N04-5M6_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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