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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50N04-5M6L_GE3

Name: SQD50N04-5M6L_GE3
Brand: Vishay Siliconix
SKU: SQD50N04-5M6L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50N04-5M6L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50N04-5M6L_GE3.pdf

Description:: MOSFET N-CH 40V 50A TO252AA

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Product details

Overview

SQD50N04-5M6L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-252 package, rated for 40 V V_DS, 50 A continuous drain current at 25 °C, and 0.0056 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control units and battery disconnect circuits.

For engineers reviewing the SQD50N04-5M6L_GE3 datasheet, SQD50N04-5M6L_GE3 pinout, SQD50N04-5M6L_GE3 application, or SQD50N04-5M6L_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 100 % UIS tested ruggedness, and thermal resistance of 2.1 °C/W (junction-to-case), critical for high-reliability automotive power switching.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and motor drivers. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level microcontrollers, while its 46 nC total gate charge supports efficient PWM operation at frequencies up to 100 kHz.

The device integrates a robust body diode with 0.87 V forward voltage at 30 A and is characterized for avalanche energy (E_AS = 54 mJ), supporting unclamped inductive switching in solenoid and relay drive applications without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin
R_DS(on) @ 10 V	0.0056 Ω - Enables <1.4 W conduction loss at 50 A, reducing heatsink requirements
R_DS(on) @ 4.5 V	0.0070 Ω - Supports direct drive from standard MCU GPIOs without level-shifting
I_D (continuous)	50 A @ T_C = 25 °C - Sustains high-current loads such as starter relays and HVAC blowers
T_J max	+175 °C - Qualified for under-hood environments including transmission control modules
E_AS	54 mJ - Withstands single-pulse inductive energy without failure in valve actuation
R_thJC	2.1 °C/W - Enables high-power dissipation with minimal thermal interface resistance to heatsink

Pinout & Package

TO-252 (DPAK) surface-mount package with drain-connected tab for direct thermal mounting. Tab is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤ ±20 V drive; 2.8 Ω typical gate resistance limits ringing
D	Drain	Main high-side power path; tab connection provides low-inductance, high-current return path to PCB copper
S	Source	Power return node; referenced to system ground in low-side switch configurations

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including temperature cycling, HTRB, and ESD
100 % UIS tested	Each unit undergoes unclamped inductive switching validation at rated current and voltage
TrenchFET® architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling compact 50 A designs
Low Q_g (46 nC)	Reduces gate driver power loss and enables faster turn-on/turn-off transitions
Drain-connected tab	Provides direct thermal path to PCB copper pour or heatsink, lowering effective R_thJA

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Battery Disconnect Switch
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and de-energization. Use Value: 0.0070 Ω R_DS(on) at 4.5 V ensures full on-state conduction with standard ECU driver ICs, minimizing voltage drop and heat generation during repeated pulsing.	Use Scenario: Isolating 12 V battery supply from vehicle electronics during sleep mode or fault conditions. IC Role / Device Role / Timing Role: High-current, normally-open solid-state disconnect switch activated by body control module. Use Value: 50 A continuous rating and 200 A pulsed capability support cold-cranking loads; AEC-Q101 qualification guarantees reliability over 15-year vehicle lifetime.
Electric Power Steering (EPS) Motor Phase Switch	12 V DC-DC Converter Primary Switch
Use Scenario: Half-bridge phase leg in 12 V EPS motor inverter handling bidirectional 30 A peak currents. IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch in three-phase inverter topology. Use Value: 175 °C max junction temperature and 54 mJ E_AS allow safe operation under short-circuit and regenerative braking conditions without derating.	Use Scenario: Primary-side switch in 12 V input, 5 V output buck converter powering ADAS sensors. IC Role / Device Role / Timing Role: High-efficiency, high-frequency (100–300 kHz) power switch in non-isolated DC-DC regulator. Use Value: 46 nC Q_g and 2850 pF C_iss enable low switching loss at 200 kHz, improving converter efficiency above 92 % at 10 A load.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Battery Disconnect Switch

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and de-energization.

Use Value: 0.0070 Ω R_DS(on) at 4.5 V ensures full on-state conduction with standard ECU driver ICs, minimizing voltage drop and heat generation during repeated pulsing.

Use Scenario: Isolating 12 V battery supply from vehicle electronics during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: High-current, normally-open solid-state disconnect switch activated by body control module.

Use Value: 50 A continuous rating and 200 A pulsed capability support cold-cranking loads; AEC-Q101 qualification guarantees reliability over 15-year vehicle lifetime.

Electric Power Steering (EPS) Motor Phase Switch

12 V DC-DC Converter Primary Switch

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverter handling bidirectional 30 A peak currents.

IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch in three-phase inverter topology.

Use Value: 175 °C max junction temperature and 54 mJ E_AS allow safe operation under short-circuit and regenerative braking conditions without derating.

Use Scenario: Primary-side switch in 12 V input, 5 V output buck converter powering ADAS sensors.

IC Role / Device Role / Timing Role: High-efficiency, high-frequency (100–300 kHz) power switch in non-isolated DC-DC regulator.

Use Value: 46 nC Q_g and 2850 pF C_iss enable low switching loss at 200 kHz, improving converter efficiency above 92 % at 10 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A rated, DFN5x6 package; R_DS(on) = 0.75 mΩ @ 10 V - lower on-resistance but higher gate charge (120 nC)	Requires larger PCB footprint and more complex thermal management due to higher current density	Preferred for ultra-low-loss 48 V systems; not drop-in for TO-252 layouts
IRF3205PbF	55 V, 110 A, TO-220; R_DS(on) = 8 mΩ @ 10 V; not AEC-Q101 qualified; R_thJC = 1.5 °C/W	Lacks automotive qualification and has higher on-resistance - unsuitable for safety-critical ECU functions	Acceptable for non-automotive industrial 12 V switching where qualification is not required

Compared with STL220N4F7AG and IRF3205PbF, the SQD50N04-5M6L_GE3 offers optimal balance of AEC-Q101 compliance, TO-252 manufacturability, and 4.5 V logic-level drive-making it the preferred choice for cost-sensitive, space-constrained automotive modules requiring validated reliability.

Availability

SQD50N04-5M6L_GE3 is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across automotive production lifecycles.

Supply support for SQD50N04-5M6L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD50N04-5M6L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis electronics.

FAQ

What is the maximum gate-source voltage rating for SQD50N04-5M6L_GE3?

The SQD50N04-5M6L_GE3 has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS within –12 V to +15 V, especially during fast switching transients where ringing may occur. The SQD50N04-5M6L_GE3 datasheet specifies this absolute maximum in Section 2 (Absolute Maximum Ratings).

Is SQD50N04-5M6L_GE3 suitable for 4.5 V logic-level microcontroller drive?

Yes, the SQD50N04-5M6L_GE3 is fully compatible with 4.5 V logic-level drive: its R_DS(on) is guaranteed at 0.0070 Ω at V_GS = 4.5 V and I_D = 15 A. This allows direct interfacing with common automotive MCUs (e.g., Infineon AURIX™, NXP S32K) without gate drivers. The SQD50N04-5M6L_GE3 achieves full enhancement well below 4.5 V, with V_GS(th) ranging from 1.5 V to 2.5 V.

Does SQD50N04-5M6L_GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SQD50N04-5M6L_GE3 includes a monolithic body diode inherent to its vertical N-channel MOSFET structure. At I_F = 30 A and V_GS = 0 V, the source-drain forward voltage (V_SD) is typically 0.87 V and max 1.5 V at 25 °C. This diode supports freewheeling in inductive loads like solenoids and motors, and is characterized in the SQD50N04-5M6L_GE3 datasheet Section 4 (Source-Drain Diode Ratings).

What thermal resistance values apply to SQD50N04-5M6L_GE3 in a standard PCB layout?

For SQD50N04-5M6L_GE3 mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides, the junction-to-ambient thermal resistance (R_thJA) is 50 °C/W, while junction-to-case (drain tab) is 2.1 °C/W. These values assume full solder coverage of the drain tab. Actual R_thJA improves significantly with heatsinking - the SQD50N04-5M6L_GE3 benefits most from thermal vias under the tab connected to internal ground planes.

Is SQD50N04-5M6L_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQD50N04-5M6L_GE3 is AEC-Q101 qualified per the Vishay datasheet revision S15-2665-Rev. A. Qualification includes HTGB, HTRB, TC, UHAST, and mechanical stress tests, plus 100 % R_g and UIS screening. This confirms suitability for automotive powertrain and chassis applications. The SQD50N04-5M6L_GE3 part marking and qualification data are documented in Vishay's reliability report PPG-63413.

SQD50N04-5M6L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50N04-5M6L_GE3 FAQ

1.How can I place an order for SQD50N04-5M6L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50N04-5M6L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50N04-5M6L_GE3 reliable?

The price and inventory of SQD50N04-5M6L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04-5M6L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD50N04-5M6L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04-5M6L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50N04-5M6L_GE3?

SQD50N04-5M6L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50N04-5M6L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50N04-5M6L_GE3?

For technical support, including SQD50N04-5M6L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04-5M6L_GE3 requirements.

6.How does Aetrix verify that SQD50N04-5M6L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50N04-5M6L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04-5M6L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD50N04-5M6L_GE3?

All SQD50N04-5M6L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04-5M6L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50N04-5M6L_GE3 part is unused and in its original packaging.

Return procedure for SQD50N04-5M6L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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