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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50N04-5M6_T4GE3

Name: SQD50N04-5M6_T4GE3
Brand: Vishay Siliconix
SKU: SQD50N04-5M6_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50N04-5M6_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50N04-5M6_T4GE3.pdf

Description:: MOSFET N-CH 40V 50A TO252AA

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Product details

Overview

SQD50N04-5M6_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.6 mΩ R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab-used in high-current DC motor control and automotive body electronics.

For engineers reviewing the SQD50N04-5M6_T4GE3 datasheet, SQD50N04-5M6_T4GE3 pinout, SQD50N04-5M6_T4GE3 application, or SQD50N04-5M6_T4GE3 equivalent, key selection criteria include its 2.1 °C/W junction-to-case thermal resistance, 100% R_g and UIS tested reliability, and low gate charge (55 nC typical) enabling efficient high-frequency switching in 12 V automotive systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (2.5–3.5 V) supports direct drive from standard 3.3 V/5 V microcontrollers, while the 0.5–4.5 Ω gate resistance enables precise turn-on/turn-off timing control.

The device integrates a robust body diode with 0.85–1.5 V forward voltage at 30 A and supports repetitive avalanche energy up to 80 mJ. Thermal design is facilitated by its low R_thJC (2.1 °C/W) and specified R_thJA of 50 °C/W on 1"² FR-4 PCB-critical for thermally constrained under-hood applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	5.6 mΩ max - Enables <1 W conduction loss at 50 A, reducing heatsink requirements in space-constrained modules.
I_D Continuous	50 A @ T_C = 25 °C - Supports high-current loads such as radiator fans, fuel pumps, and seat motors without derating.
Q_g Total Gate Charge	55 nC typical - Reduces driver power consumption and allows use of low-power gate drivers like TC4427.
T_J Operating Range	−55 to +175 °C - Qualified for under-hood environments per AEC-Q101, eliminating need for external thermal protection.
E_AS Avalanche Energy	80 mJ single-pulse - Withstands inductive kickback from solenoids and relay coils without snubber circuits.
R_thJC	2.1 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for stable operation at full current.

Pinout & Package

TO-252AA (DPAK) package with exposed drain-connected tab for thermal and electrical connection. Dimensions per Vishay document 64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), 2.28 mm lead pitch, 4.56 mm center-to-center terminal spacing.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signals; 3.5 V max V_GS(th) ensures reliable turn-on with 5 V MCU outputs.
D (Drain)	High-side switch output / Power return path	Internally connected to exposed copper tab-must be soldered to large copper pour or heatsink for thermal management.
S (Source)	Reference node / Current return	Provides low-impedance ground reference; used for current sensing when placed on low-side configuration.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, lighting, and power distribution modules.
100% R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reducing field failure risk.
TrenchFET® architecture	Delivers 20% lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in compact ECUs.
Low C_iss (3040–4000 pF)	Minimizes capacitive loading on gate drivers, supporting >100 kHz PWM in BLDC motor inverters.
Drain-connected tab	Enables dual-function mounting: thermal conduction to heatsink and low-inductance power return path.

Applications

Automotive Body Control Module (BCM)	Electric Power Steering (EPS) Motor Driver
Use Scenario: Switching 12 V loads including door locks, window lifts, and interior lighting in centralized BCM units. IC Role / Device Role / Timing Role: High-side power switch controlling load current with integrated overtemperature shutdown via junction sensing. Use Value: 175 °C rating eliminates external thermal sensors; 5.6 mΩ R_DS(on) reduces I²R losses during frequent actuation cycles.	Use Scenario: Half-bridge high-side switch in 12 V EPS motor phase-legs, handling peak currents up to 50 A. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET synchronized with complementary low-side device for PWM commutation. Use Value: 55 nC Q_g and 9–16 ns t_d(on) enable clean 20 kHz PWM edges, minimizing torque ripple and audible noise.
Engine Cooling Fan Controller	Start-Stop System Solenoid Driver
Use Scenario: Direct drive of brushless cooling fans requiring 30–45 A continuous current and thermal resilience near exhaust manifolds. IC Role / Device Role / Timing Role: High-current switching element with integrated avalanche capability to absorb fan back-EMF during abrupt stop commands. Use Value: 80 mJ E_AS and 40 A I_AS eliminate need for external flyback diodes, simplifying PCB layout and BOM.	Use Scenario: Driving 12 V starter solenoid coils in micro-hybrid start-stop systems where rapid, repeated engagement is required. IC Role / Device Role / Timing Role: Robust power switch handling pulsed 200 A surge currents (I_DM) during cranking events. Use Value: 200 A I_DM rating and −55 to +175 °C operation ensure reliable cold-cranking performance across global vehicle fleets.

Automotive Body Control Module (BCM)

Electric Power Steering (EPS) Motor Driver

Use Scenario: Switching 12 V loads including door locks, window lifts, and interior lighting in centralized BCM units.

IC Role / Device Role / Timing Role: High-side power switch controlling load current with integrated overtemperature shutdown via junction sensing.

Use Value: 175 °C rating eliminates external thermal sensors; 5.6 mΩ R_DS(on) reduces I²R losses during frequent actuation cycles.

Use Scenario: Half-bridge high-side switch in 12 V EPS motor phase-legs, handling peak currents up to 50 A.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET synchronized with complementary low-side device for PWM commutation.

Use Value: 55 nC Q_g and 9–16 ns t_d(on) enable clean 20 kHz PWM edges, minimizing torque ripple and audible noise.

Engine Cooling Fan Controller

Start-Stop System Solenoid Driver

Use Scenario: Direct drive of brushless cooling fans requiring 30–45 A continuous current and thermal resilience near exhaust manifolds.

IC Role / Device Role / Timing Role: High-current switching element with integrated avalanche capability to absorb fan back-EMF during abrupt stop commands.

Use Value: 80 mJ E_AS and 40 A I_AS eliminate need for external flyback diodes, simplifying PCB layout and BOM.

Use Scenario: Driving 12 V starter solenoid coils in micro-hybrid start-stop systems where rapid, repeated engagement is required.

IC Role / Device Role / Timing Role: Robust power switch handling pulsed 200 A surge currents (I_DM) during cranking events.

Use Value: 200 A I_DM rating and −55 to +175 °C operation ensure reliable cold-cranking performance across global vehicle fleets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N4LF6AG	Lower R_DS(on) (3.8 mΩ), but only 150 °C T_J max and no AEC-Q101 documentation in public datasheet.	Not qualified for under-hood use above 150 °C; suitable for cabin-mounted modules only.	Select if higher current density is needed and thermal environment stays below 150 °C.
IRF7470PBF	Higher R_DS(on) (7.5 mΩ), TO-252 package, AEC-Q101 qualified, but 100% UIS testing not explicitly stated.	Marginally higher conduction loss; acceptable for lower-duty-cycle loads like HVAC actuators.	Select if cost sensitivity outweighs efficiency requirements and full UIS validation is not mandatory.

Compared with STL130N4LF6AG and IRF7470PBF, the SQD50N04-5M6_T4GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, 100% UIS screening, and 5.6 mΩ R_DS(on)-making it the preferred choice for thermally aggressive, safety-critical automotive power switching.

Availability

SQD50N04-5M6_T4GE3 is available at Aetrix Electronics and suitable for automotive body control, electric power steering, and engine cooling fan applications requiring stable component supply across extended vehicle lifecycles.

Supply support for SQD50N04-5M6_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD50N04-5M6_T4GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems.

FAQ

What is the maximum continuous drain current for SQD50N04-5M6_T4GE3 at 125 °C case temperature?

The SQD50N04-5M6_T4GE3 supports 45 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 2.1 °C/W R_thJC constraint. At 175 °C junction temperature, the device maintains functionality but requires careful PCB thermal design to avoid exceeding this limit.

Is SQD50N04-5M6_T4GE3 suitable for high-frequency PWM motor control?

Yes, the SQD50N04-5M6_T4GE3 is well-suited for high-frequency PWM motor control due to its 55 nC typical total gate charge, 9–16 ns turn-on delay, and 19–30 ns rise time. These parameters enable clean switching at frequencies up to 200 kHz in low-inductance layouts. Its low C_iss (3040–4000 pF) further reduces gate driver loading, making it ideal for BLDC and stepper motor drivers in automotive applications.

Does SQD50N04-5M6_T4GE3 have integrated avalanche ruggedness?

Yes, the SQD50N04-5M6_T4GE3 is rated for 80 mJ single-pulse avalanche energy (E_AS) and 40 A single-pulse avalanche current (I_AS) with L = 0.1 mH. It undergoes 100% unclamped inductive switching (UIS) testing during production, confirming robustness against inductive load transients common in solenoid, relay, and motor control circuits.

What is the gate-source leakage specification for SQD50N04-5M6_T4GE3?

The gate-source leakage current (I_GSS) for SQD50N04-5M6_T4GE3 is ±100 nA maximum at V_GS = ±20 V and T_A = 25 °C, per the Static Specifications table. This low leakage ensures minimal standby power draw and stable gate bias in always-on automotive modules, even after prolonged exposure to elevated temperatures.

How does the TO-252 package of SQD50N04-5M6_T4GE3 aid thermal management?

The TO-252 package of SQD50N04-5M6_T4GE3 features an exposed drain-connected copper tab that serves as both electrical connection and primary thermal path. With a junction-to-case thermal resistance of 2.1 °C/W, it enables direct mounting to heatsinks or large PCB copper areas. Vishay recommends minimum pad dimensions per Application Note 826 (7.18 mm × 10.67 mm) to achieve the specified 50 °C/W R_thJA.

SQD50N04-5M6_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50N04-5M6_T4GE3 FAQ

1.How can I place an order for SQD50N04-5M6_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50N04-5M6_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50N04-5M6_T4GE3 reliable?

The price and inventory of SQD50N04-5M6_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N04-5M6_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD50N04-5M6_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N04-5M6_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50N04-5M6_T4GE3?

SQD50N04-5M6_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50N04-5M6_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50N04-5M6_T4GE3?

For technical support, including SQD50N04-5M6_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N04-5M6_T4GE3 requirements.

6.How does Aetrix verify that SQD50N04-5M6_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50N04-5M6_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N04-5M6_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD50N04-5M6_T4GE3?

All SQD50N04-5M6_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N04-5M6_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50N04-5M6_T4GE3 part is unused and in its original packaging.

Return procedure for SQD50N04-5M6_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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