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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50N05-11L_GE3

Name: SQD50N05-11L_GE3
Brand: Vishay Siliconix
SKU: SQD50N05-11L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50N05-11L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50N05-11L_GE3.pdf

Description:: MOSFET N-CH 50V 50A TO252AA

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Product details

Overview

SQD50N05-11L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-252 package, rated for 50 V V_DS, 50 A continuous drain current at T_C = 25 °C, and R_DS(on) = 11 mΩ at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converters, and load switching.

For engineers reviewing the SQD50N05-11L_GE3 datasheet, SQD50N05-11L_GE3 pinout, SQD50N05-11L_GE3 application, or SQD50N05-11L_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (15 mΩ), 100 % R_g and UIS tested reliability, and thermal resistance of 2 °C/W (junction-to-case).

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate charge profile (Q_g = 34.6–52 nC) and low Crss (144–180 pF) support efficient PWM operation in 12 V/24 V systems with minimal Miller-induced shoot-through risk.

The device integrates a robust body diode (V_SD = 0.95–1.5 V at I_F = 45 A) and is characterized for avalanche energy (E_AS = 25.3 mJ), enabling reliable operation in inductive load switching without external snubbers in validated designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) @ V_GS = 10 V	0.011 Ω - Enables ≤ 25 W conduction loss at 50 A, critical for thermally constrained modules
R_DS(on) @ V_GS = 4.5 V	0.015 Ω - Supports logic-level gate drive from microcontrollers or gate drivers with 4.5 V output
I_D Continuous @ T_C = 25 °C	50 A - Sustains high-current loads such as radiator fans, fuel pumps, and solenoid drivers
Junction Temp Range	−55 to +175 °C - Qualified for under-hood environments per AEC-Q101, including engine bay mounting
R_thJC	2 °C/W - Enables direct heatsinking via drain-tab attachment, reducing thermal bottleneck in PCB-mounted designs
Q_g	34.6–52 nC - Determines gate driver power requirement and switching loss trade-off in 20–100 kHz converters

Pinout & Package

TO-252 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. Dimensions per Vishay document 64424: D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, tab area ≈ 4.1 × 4.32 mm².

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives gate drive signal; requires < ±20 V rating and low-impedance path to minimize switching losses
D (Drain)	High-side power terminal	Connected to exposed metal tab; must be soldered to large copper pour or heatsink for thermal management
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; layout must minimize inductance to prevent ringing

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling compact 50 A switching in TO-252
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and UHAST - no requalification needed for Tier 1 designs
100 % R_g and UIS testing	Ensures gate robustness against transient overvoltage and unclamped inductive switching stress in real-world loads
Low R_thJC = 2 °C/W	Permits > 50 W power dissipation with modest heatsinking - eliminates need for bolt-down packages in many 12 V modules
Body diode with soft recovery	V_SD = 0.95 V typical at 45 A enables synchronous rectification replacement in low-side configurations

Applications

Engine Cooling Fan Control	Automotive DC-DC Converter High-Side Switch
Use Scenario: PWM-controlled 12 V cooling fan driving up to 45 A peak current in engine bay at ambient up to 125 °C. IC Role / Device Role / Timing Role: Low-side switching MOSFET with integrated body diode freewheeling path during PWM off-time. Use Value: R_DS(on) = 11 mΩ minimizes I²R heating at full load; 175 °C rating ensures reliability without derating at elevated under-hood temperatures.	Use Scenario: High-side switch in 12 V → 5 V/3.3 V buck converter for ADAS camera module power supply. IC Role / Device Role / Timing Role: Primary power switch operating at 200–500 kHz with gate drive referenced to switched node. Use Value: Low Q_gd/Q_gs ratio (9.1–14 nC / 5.5–9 nC) reduces Miller plateau duration, improving duty cycle control and light-load efficiency.
Electric Power Steering (EPS) Motor Phase Leg	Body Control Module (BCM) Load Driver
Use Scenario: Half-bridge leg in 3-phase EPS motor inverter, switching at ≤ 20 kHz with 50 A phase current. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in H-bridge topology; body diode conducts reverse current during dead-time. Use Value: E_AS = 25.3 mJ supports safe single-pulse inductive energy absorption during fault conditions without external clamping.	Use Scenario: Driving resistive/inductive loads (headlights, relays, solenoids) from BCM microcontroller GPIO via external gate driver. IC Role / Device Role / Timing Role: Final-stage power switch controlled by low-voltage logic; handles inrush and stall currents. Use Value: 200 A pulsed drain current rating accommodates 10× inrush surges from cold filament lamps or relay coils without failure.

Engine Cooling Fan Control

Automotive DC-DC Converter High-Side Switch

Use Scenario: PWM-controlled 12 V cooling fan driving up to 45 A peak current in engine bay at ambient up to 125 °C.

IC Role / Device Role / Timing Role: Low-side switching MOSFET with integrated body diode freewheeling path during PWM off-time.

Use Value: R_DS(on) = 11 mΩ minimizes I²R heating at full load; 175 °C rating ensures reliability without derating at elevated under-hood temperatures.

Use Scenario: High-side switch in 12 V → 5 V/3.3 V buck converter for ADAS camera module power supply.

IC Role / Device Role / Timing Role: Primary power switch operating at 200–500 kHz with gate drive referenced to switched node.

Use Value: Low Q_gd/Q_gs ratio (9.1–14 nC / 5.5–9 nC) reduces Miller plateau duration, improving duty cycle control and light-load efficiency.

Electric Power Steering (EPS) Motor Phase Leg

Body Control Module (BCM) Load Driver

Use Scenario: Half-bridge leg in 3-phase EPS motor inverter, switching at ≤ 20 kHz with 50 A phase current.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in H-bridge topology; body diode conducts reverse current during dead-time.

Use Value: E_AS = 25.3 mJ supports safe single-pulse inductive energy absorption during fault conditions without external clamping.

Use Scenario: Driving resistive/inductive loads (headlights, relays, solenoids) from BCM microcontroller GPIO via external gate driver.

IC Role / Device Role / Timing Role: Final-stage power switch controlled by low-voltage logic; handles inrush and stall currents.

Use Value: 200 A pulsed drain current rating accommodates 10× inrush surges from cold filament lamps or relay coils without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N5LF6AG	50 V, 130 A, R_DS(on) = 3.8 mΩ @ 10 V, PowerFLAT 5x6 package, AEC-Q101	Higher current capacity and lower R_DS(on), but larger footprint and higher gate charge (Q_g = 72 nC)	Preferred when board space allows and lower conduction loss justifies increased switching loss and layout complexity
IRF540NSTRR	100 V, 33 A, R_DS(on) = 44 mΩ @ 10 V, TO-220, not AEC-Q101 qualified	Higher voltage rating but significantly higher on-resistance and no automotive qualification	Suitable only for non-automotive industrial or prototyping use where 50 V margin and AEC compliance are not required

Compared with STL130N5LF6AG and IRF540NSTRR, the SQD50N05-11L_GE3 offers optimal balance of automotive qualification, thermal performance (R_thJC = 2 °C/W), and gate drive compatibility (4.5 V logic-level turn-on) in a compact TO-252 footprint - making it ideal for cost- and space-constrained automotive power stages.

Availability

SQD50N05-11L_GE3 is available at Aetrix Electronics and suitable for engine control units, body electronics modules, and ADAS power supplies requiring stable component supply across extended automotive lifecycles.

Supply support for SQD50N05-11L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD50N05-11L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V/24 V vehicle subsystems with stringent AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current rating for SQD50N05-11L_GE3 at 125 °C case temperature?

The SQD50N05-11L_GE3 supports 32 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation in high-ambient automotive environments without exceeding the 175 °C maximum junction temperature.

Is SQD50N05-11L_GE3 suitable for 4.5 V gate drive applications?

Yes, the SQD50N05-11L_GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 15 mΩ at I_D = 20 A. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.5 V, ensuring strong enhancement-mode turn-on with standard 4.5 V logic-level drivers used in automotive microcontrollers and gate driver ICs.

Does SQD50N05-11L_GE3 have avalanche capability, and how is it rated?

Yes, the SQD50N05-11L_GE3 is rated for single-pulse avalanche with I_AS = 22.5 A (L = 0.1 mH) and E_AS = 25.3 mJ. This capability is production-tested and documented in the datasheet, enabling robust operation in inductive load switching without external protection in validated circuit layouts.

What is the thermal resistance from junction to case (R_thJC) for SQD50N05-11L_GE3, and why does it matter?

The SQD50N05-11L_GE3 has R_thJC = 2 °C/W, measured from junction to the drain tab. This low value enables efficient heat transfer to an external heatsink or PCB copper pour, allowing sustained 50 A operation with manageable temperature rise - a critical advantage over higher-R_thJC alternatives in space-constrained automotive modules.

How is SQD50N05-11L_GE3 qualified for automotive use?

The SQD50N05-11L_GE3 is AEC-Q101 qualified, with test evidence including HTGB, HTRB, TC, UHAST, and mechanical stress validation. Vishay confirms ongoing parametric verification per Rev. D of datasheet 72168, and material compliance follows Vishay's standardized automotive material categorization per doc# 99912.

SQD50N05-11L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2106 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50N05-11L_GE3 FAQ

1.How can I place an order for SQD50N05-11L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50N05-11L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50N05-11L_GE3 reliable?

The price and inventory of SQD50N05-11L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50N05-11L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD50N05-11L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50N05-11L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50N05-11L_GE3?

SQD50N05-11L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50N05-11L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50N05-11L_GE3?

For technical support, including SQD50N05-11L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50N05-11L_GE3 requirements.

6.How does Aetrix verify that SQD50N05-11L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50N05-11L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50N05-11L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD50N05-11L_GE3?

All SQD50N05-11L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50N05-11L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50N05-11L_GE3 part is unused and in its original packaging.

Return procedure for SQD50N05-11L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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