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Vishay Siliconix SQD50P03-07_GE3
- Part No.:
- SQD50P03-07_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50P03-07_GE3.pdf
- Description:
- MOSFET P-CH 30V 50A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,854
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Product details
Overview
SQD50P03-07_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and 7 mΩ RDS(on) at VGS = -10 V. It features trench-based silicon architecture, AEC-Q101 qualification, 100 % Rg and UIS testing, and TO-252 (DPAK) package with drain-connected tab for high-power motor control and load switching in 12 V/24 V vehicle systems.
For engineers reviewing the SQD50P03-07_GE3 datasheet, SQD50P03-07_GE3 pinout, SQD50P03-07_GE3 application, or SQD50P03-07_GE3 equivalent, key selection criteria include its -30 V VDS rating, low 7 mΩ on-resistance at -10 V gate drive, 175 °C junction temperature capability, AEC-Q101 compliance, and thermal resistance of 1.1 °C/W junction-to-case - critical for under-hood power distribution and high-reliability DC-DC converter designs.
Technical Context
This MOSFET operates as a high-side or low-side switch in automotive power management, leveraging trench FET technology to achieve low conduction loss and robust avalanche energy handling (125 mJ). Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard logic-level or microcontroller-compatible gate drivers.
The device integrates a built-in body diode with -0.85 V typical forward voltage at -30 A, enabling synchronous rectification or freewheeling in bidirectional power stages. Thermal design is supported by a low RthJC of 1.1 °C/W and validated operation up to +175 °C TJ, meeting stringent under-hood ambient requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | -30 V - supports 12 V/24 V automotive battery rail with margin against load dump transients |
| RDS(on) | 7 mΩ @ VGS = -10 V, ID = -20 A - enables <1 W conduction loss at 50 A in PCB-mounted thermal configuration |
| ID Continuous | -50 A @ TC = 25 °C - delivers full rated current with adequate heatsinking on FR-4 PCB |
| TJ Max | +175 °C - qualified for engine compartment and transmission control module environments |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronic components per Rev D |
| Qg Total | 97–146 nC - determines gate drive power and switching speed in PWM applications |
| EAS | 125 mJ - withstands inductive energy during unclamped inductive switching events |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for direct thermal coupling to PCB copper pour or heatsink. Dimensions per Vishay document 64424: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source (S) | Current return path for P-channel conduction | Connected to higher potential (e.g., battery rail) in high-side switch configuration |
| Gate (G) | Control electrode for channel formation | Requires negative voltage relative to source to turn on; compatible with isolated gate drivers |
| Drain (D) | Main current output terminal | Internally bonded to exposed metal tab - must be electrically connected to system ground or low-side return |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Architecture | Enables lower RDS(on) and improved switching efficiency vs. planar MOSFETs at same die size |
| AEC-Q101 Qualification | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock tests |
| 100 % Rg Tested | Ensures consistent gate resistance (1.4–4.5 Ω) for predictable turn-on/turn-off timing |
| 100 % UIS Tested | Guarantees single-pulse avalanche robustness up to 125 mJ without degradation |
| Drain-Connected Tab | Provides low-thermal-resistance path (RthJC = 1.1 °C/W) to PCB copper or external heatsink |
Applications
| Body Control Module (BCM) | Engine Control Unit (ECU) Power Distribution |
|---|---|
Use Scenario: Switching 12 V loads such as door locks, interior lighting, and window motors in modern BCMs. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to resistive and inductive actuators. Use Value: Low 7 mΩ RDS(on) minimizes voltage drop and heat generation during sustained 30–50 A load activation. | Use Scenario: Managing power routing to fuel injectors, ignition coils, and sensors in ECU subsystems. IC Role / Device Role / Timing Role: Robust low-side or high-side switching element with fast turn-off (<95 ns td(off)) for precise pulse-width control. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliability across extreme under-hood thermal cycles. |
| Start-Stop System Battery Management | Automotive DC-DC Converter Secondary Side |
Use Scenario: Controlling auxiliary battery isolation and regenerative braking energy routing in 12 V start-stop systems. IC Role / Device Role / Timing Role: Bidirectional power switch supporting reverse-current blocking and controlled discharge paths. Use Value: Body diode VF = -0.85 V at -30 A reduces conduction loss during freewheeling, improving system efficiency. | Use Scenario: Synchronous rectification in 12 V → 5 V/3.3 V buck converters powering ADAS camera modules and infotainment processors. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch replacing Schottky diodes to reduce forward voltage drop and thermal load. Use Value: 97–146 nC Qg enables efficient gate driving with minimal driver IC power consumption at 200–500 kHz switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | RDS(on) = 20 mΩ @ -10 V; lower current rating (-74 A); TO-220 package | Larger footprint, higher thermal resistance (RthJC = 1.7 °C/W), not AEC-Q101 qualified | Use where AEC-Q101 is not required and board space allows through-hole mounting |
| STP55P03LH6 | RDS(on) = 6.5 mΩ @ -10 V; same TO-252 package; AEC-Q101 qualified; slightly higher Qg (160 nC) | Higher gate charge increases driver power demand but offers marginally lower conduction loss | Prefer when minimizing conduction loss is prioritized over switching loss in low-frequency (<50 kHz) applications |
Compared with IRF4905PBF and STP55P03LH6, the SQD50P03-07_GE3 balances low RDS(on), AEC-Q101 compliance, and moderate Qg - making it optimal for thermally constrained, high-reliability automotive power switches operating at 100–300 kHz.
Availability
SQD50P03-07_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, and start-stop battery management systems requiring stable component supply and long-term lifecycle support.
Supply support for SQD50P03-07_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQD50P03-07_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered for high-efficiency, high-temperature power switching in safety-critical vehicle subsystems.
FAQ
What is the maximum junction temperature rating for SQD50P03-07_GE3?
The SQD50P03-07_GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress testing. This rating enables deployment in under-hood locations such as engine control modules and transmission control units where ambient temperatures exceed 125 °C. Derating curves in the datasheet confirm stable RDS(on) performance up to this limit.
Is SQD50P03-07_GE3 suitable for high-side switching configurations?
Yes, SQD50P03-07_GE3 is optimized for high-side switching due to its P-channel topology and -1.5 V to -2.5 V gate threshold voltage. When used with a gate driver capable of pulling the gate to ~0 V (relative to source), it achieves full enhancement. The drain-connected tab simplifies thermal management in high-side layouts where the drain ties to ground or low-impedance return.
Does SQD50P03-07_GE3 include integrated ESD protection?
No, SQD50P03-07_GE3 does not feature integrated ESD protection circuitry. It relies on external layout practices and transient suppressors for system-level ESD immunity. The device itself passes HBM testing per AEC-Q101 (±2 kV), but designers must implement board-level TVS diodes or RC filters on gate and source lines in environments with high electrostatic risk.
What is the typical gate charge value for SQD50P03-07_GE3 at -10 V drive?
The typical total gate charge (Qg) for SQD50P03-07_GE3 is 97 nC at VGS = -10 V, VDS = -15 V, and ID = -75 A. This value directly impacts switching losses and gate driver sizing - for example, a 1 Ω gate resistor yields ~100 ns turn-on delay and ~15 ns rise time, as confirmed in the datasheet's dynamic characteristics table.
Can SQD50P03-07_GE3 replace N-channel MOSFETs in existing designs?
No, SQD50P03-07_GE3 cannot directly replace N-channel MOSFETs due to opposite polarity, gate drive polarity, and circuit topology requirements. Replacing an N-channel high-side switch would require redesigning the gate driver to sink current and reference to the source rail. Its P-channel nature makes it suitable only for complementary roles - e.g., high-side switch where level-shifting complexity must be avoided.
SQD50P03-07_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 146 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD50P03-07_GE3 FAQ
1.How can I place an order for SQD50P03-07_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD50P03-07_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD50P03-07_GE3 reliable?
The price and inventory of SQD50P03-07_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50P03-07_GE3 is usually 5 days.
3.What payment methods are accepted for SQD50P03-07_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50P03-07_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD50P03-07_GE3?
SQD50P03-07_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD50P03-07_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD50P03-07_GE3?
For technical support, including SQD50P03-07_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50P03-07_GE3 requirements.
6.How does Aetrix verify that SQD50P03-07_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD50P03-07_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50P03-07_GE3 meets industry standards.
7.What is the process for return or replacement of SQD50P03-07_GE3?
All SQD50P03-07_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50P03-07_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD50P03-07_GE3 part is unused and in its original packaging.
Return procedure for SQD50P03-07_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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