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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50P04-09L_T4GE3

Name: SQD50P04-09L_T4GE3
Brand: Vishay Siliconix
SKU: SQD50P04-09L_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50P04-09L_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50P04-09L_T4GE3.pdf

Description:: MOSFET P-CH 40V 50A TO252AA

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Product details

Overview

SQD50P04-09L_T4GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -40 V drain-source voltage, 0.0094 Ω R_DS(on) at -10 V gate drive, and -50 A continuous drain current at T_C = 25 °C. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab for enhanced thermal performance in automotive load switching applications.

For engineers reviewing the SQD50P04-09L_T4GE3 datasheet, SQD50P04-09L_T4GE3 pinout, SQD50P04-09L_T4GE3 application, or SQD50P04-09L_T4GE3 equivalent, key selection criteria include its -40 V V_DS, low R_DS(on) at -4.5 V gate drive (0.019 Ω), 100 % R_g and UIS tested reliability, halogen-free construction per IEC 61249-2-21, and RoHS compliance.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage P-channel switching in harsh automotive environments. Its gate threshold voltage range (-1.5 V to -2.5 V) enables robust turn-on control with standard logic-level drivers, while the 1.1 °C/W junction-to-case thermal resistance supports high-power operation when mounted on thermally optimized PCBs.

The device integrates a built-in body diode with -0.95 V to -1.5 V forward voltage at -50 A, and delivers 125 mJ single-pulse avalanche energy. Dynamic parameters-including 103 nC typical total gate charge, 13 ns turn-on delay, and 61 ns turn-off delay-support efficient high-frequency PWM control in DC-DC converters and motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection
R_DS(on) @ V_GS = -10 V	0.0094 Ω - Enables <1 W conduction loss at -50 A, critical for high-efficiency power distribution
R_DS(on) @ V_GS = -4.5 V	0.019 Ω - Ensures reliable turn-on with 5 V microcontroller GPIO or automotive CAN/LIN interface logic
I_D Continuous	-50 A @ T_C = 25 °C - Supports high-current loads such as HVAC blowers, seat heaters, and lighting modules
T_J Operating Range	-55 °C to +175 °C - Meets under-hood temperature requirements per AEC-Q101 stress testing
Q_g Total Gate Charge	103 nC typical - Determines driver strength requirement for <100 ns switching transitions
R_thJC	1.1 °C/W - Allows direct heatsinking via drain-tab mounting to reduce thermal bottleneck in compact layouts

Pinout & Package

TO-252AA (DPAK) package with exposed drain tab on bottom side; 3-terminal surface-mount configuration optimized for thermal dissipation on FR-4 PCBs with 1"² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Current return path for P-channel conduction	Connected to higher potential (e.g., battery rail); defines reference for gate drive
Gate (G)	Control terminal for channel inversion	Requires negative voltage relative to source to turn on; sensitive to ESD (±20 V max)
Drain (D)	Main current-carrying terminal, tied to tab	Electrically and thermally connected to exposed copper pad; must be routed to ground or low-side return

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive use including temperature cycling, HTRB, and UIS stress per JESD22-A108
TrenchFET® Architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling smaller footprint for same current rating
100 % R_g Tested	Guarantees gate resistance between 1.4 Ω and 4.2 Ω, ensuring predictable switching speed and driver compatibility
Halogen-Free Construction	Complies with IEC 61249-2-21, supporting environmentally regulated automotive supply chains
Drain-Tab Thermal Path	Enables >90 % of power dissipation to transfer directly to PCB copper, reducing junction temperature rise by ~30 °C vs. non-tab packages

Applications

Body Control Module Load Switch	Automotive HVAC Blower Driver
Use Scenario: High-side switching of 12 V accessory loads (e.g., door locks, mirror heaters) controlled by MCU with 5 V GPIO. IC Role / Device Role / Timing Role: P-channel high-side switch providing reverse-polarity and overcurrent protection. Use Value: Low 0.019 Ω R_DS(on) at -4.5 V gate drive ensures full turn-on without level-shifting circuitry, reducing BOM count and layout complexity.	Use Scenario: PWM-controlled blower motor in passenger cabin climate system operating up to 50 A peak. IC Role / Device Role / Timing Role: Main power switch in half-bridge or high-side driver stage. Use Value: 175 °C T_J rating and 125 mJ E_AS withstand capability prevent failure during motor stall or inductive kickback events.
Start-Stop Battery Management	Commercial Vehicle Lighting Control
Use Scenario: Isolation of auxiliary battery circuits during engine cranking to maintain ECU voltage stability. IC Role / Device Role / Timing Role: High-reliability power OR-ing and load dump protection switch. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure consistent performance across extreme cold-cranking and hot-soak conditions.	Use Scenario: On/off control of LED headlamps and fog lamps in trucks and buses with 24 V nominal systems. IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive load dumps up to ±60 V. Use Value: -40 V V_DS rating with margin above 24 V system transients, plus 100 % UIS testing, guarantees survival during ISO 7637-2 pulse 5a/b events.

Body Control Module Load Switch

Automotive HVAC Blower Driver

Use Scenario: High-side switching of 12 V accessory loads (e.g., door locks, mirror heaters) controlled by MCU with 5 V GPIO.

IC Role / Device Role / Timing Role: P-channel high-side switch providing reverse-polarity and overcurrent protection.

Use Value: Low 0.019 Ω R_DS(on) at -4.5 V gate drive ensures full turn-on without level-shifting circuitry, reducing BOM count and layout complexity.

Use Scenario: PWM-controlled blower motor in passenger cabin climate system operating up to 50 A peak.

IC Role / Device Role / Timing Role: Main power switch in half-bridge or high-side driver stage.

Use Value: 175 °C T_J rating and 125 mJ E_AS withstand capability prevent failure during motor stall or inductive kickback events.

Start-Stop Battery Management

Commercial Vehicle Lighting Control

Use Scenario: Isolation of auxiliary battery circuits during engine cranking to maintain ECU voltage stability.

IC Role / Device Role / Timing Role: High-reliability power OR-ing and load dump protection switch.

Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure consistent performance across extreme cold-cranking and hot-soak conditions.

Use Scenario: On/off control of LED headlamps and fog lamps in trucks and buses with 24 V nominal systems.

IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive load dumps up to ±60 V.

Use Value: -40 V V_DS rating with margin above 24 V system transients, plus 100 % UIS testing, guarantees survival during ISO 7637-2 pulse 5a/b events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V; no AEC-Q101 qualification; TO-220 package	Lacks automotive qualification and thermal performance of TO-252 drain-tab mounting	Acceptable for industrial prototypes but not production automotive designs requiring AEC-Q101 traceability
STP55P04M8	R_DS(on) = 0.0075 Ω @ -10 V; AEC-Q101 qualified; TO-220FP package with isolated tab	Lower R_DS(on) but larger footprint and higher R_thJA (60 °C/W vs. 50 °C/W)	Better conduction efficiency but requires external heatsink; less suitable for space-constrained PCBs than SQD50P04-09L_T4GE3

Compared with IRF4905PbF and STP55P04M8, the SQD50P04-09L_T4GE3 uniquely balances AEC-Q101 compliance, TO-252 thermal efficiency (1.1 °C/W R_thJC), and -4.5 V logic-level drive in a surface-mount package-making it optimal for volume automotive ECUs where board space, reliability, and qualification are jointly constrained.

Availability

SQD50P04-09L_T4GE3 is available at Aetrix Electronics and suitable for automotive body control modules, HVAC blower drivers, and start-stop battery management systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQD50P04-09L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD50P04-09L_T4GE3 belongs to Vishay's TrenchFET® automotive-qualified P-channel MOSFET family, engineered specifically for high-current, high-temperature switching in vehicle subsystems where reliability and thermal efficiency are mission-critical.

FAQ

What is the maximum continuous drain current rating for SQD50P04-09L_T4GE3 at 125 °C case temperature?

The SQD50P04-09L_T4GE3 maintains -50 A continuous drain current rating even at T_C = 125 °C, as confirmed in the Absolute Maximum Ratings table. This sustained current capability-unaffected by elevated case temperature-is enabled by its low R_DS(on) and 1.1 °C/W junction-to-case thermal resistance, making SQD50P04-09L_T4GE3 suitable for thermally demanding under-hood applications without derating.

Does SQD50P04-09L_T4GE3 support logic-level gate drive from a 5 V microcontroller?

Yes, SQD50P04-09L_T4GE3 supports logic-level gate drive: its R_DS(on) is specified at -4.5 V V_GS (0.019 Ω), and gate threshold voltage ranges from -1.5 V to -2.5 V. When driven by a 5 V MCU GPIO referenced to source, the resulting -5 V V_GS exceeds threshold by >2.5 V margin, ensuring full enhancement. The SQD50P04-09L_T4GE3 thus eliminates need for gate driver ICs in many automotive control circuits.

Is SQD50P04-09L_T4GE3 qualified for automotive applications per AEC-Q101?

Yes, SQD50P04-09L_T4GE3 is explicitly AEC-Q101 qualified, as stated in the Features section and verified in the Vishay datasheet revision C. This qualification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS), confirming suitability for automotive powertrain, chassis, and body electronics where zero-defect reliability is mandatory.

What is the thermal resistance from junction to ambient for SQD50P04-09L_T4GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQD50P04-09L_T4GE3 is 50 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes standard DPAK pad layout per Application Note 826 and enables accurate junction temperature estimation using T_J = T_A + (P_D × R_thJA). For higher power, the lower R_thJC (1.1 °C/W) allows heatsinking the drain tab directly.

Can SQD50P04-09L_T4GE3 be used in bidirectional current applications?

No, SQD50P04-04L_T4GE3 is a unidirectional P-channel MOSFET optimized for high-side switching. Its body diode conducts only from source to drain (forward-biased when source > drain), and it lacks symmetrical conduction capability. For bidirectional current control, discrete back-to-back MOSFET configurations or dedicated bidirectional switches-not the SQD50P04-09L_T4GE3-are required.

SQD50P04-09L_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6675 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50P04-09L_T4GE3 FAQ

1.How can I place an order for SQD50P04-09L_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50P04-09L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50P04-09L_T4GE3 reliable?

The price and inventory of SQD50P04-09L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50P04-09L_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD50P04-09L_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50P04-09L_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50P04-09L_T4GE3?

SQD50P04-09L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50P04-09L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50P04-09L_T4GE3?

For technical support, including SQD50P04-09L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50P04-09L_T4GE3 requirements.

6.How does Aetrix verify that SQD50P04-09L_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50P04-09L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50P04-09L_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD50P04-09L_T4GE3?

All SQD50P04-09L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50P04-09L_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50P04-09L_T4GE3 part is unused and in its original packaging.

Return procedure for SQD50P04-09L_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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