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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50P04-13L_GE3

Name: SQD50P04-13L_GE3
Brand: Vishay Siliconix
SKU: SQD50P04-13L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50P04-13L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50P04-13L_GE3.pdf

Description:: MOSFET P-CH 40V 50A TO252

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Product details

Overview

SQD50P04-13L_GE3 from Vishay Siliconix is an automotive-grade P-channel TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.013 Ω R_DS(on) at V_GS = -10 V, and -50 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is used in high-reliability DC load switching applications such as automotive body control modules and power distribution units.

For engineers reviewing the SQD50P04-13L_GE3 datasheet, SQD50P04-13L_GE3 pinout, SQD50P04-13L_GE3 application, or SQD50P04-13L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at -4.5 V gate drive, TO-252 package thermal performance (R_thJC = 1.1 °C/W), and integrated source-drain diode with -1.5 V forward voltage at -50 A.

Technical Context

This P-channel MOSFET employs trench-gate silicon technology optimized for low conduction loss and robust avalanche energy handling (E_AS = 80 mJ). Its gate threshold voltage range of -1.5 V to -2.5 V enables reliable turn-on with standard 5 V or 3.3 V logic-level controllers in high-side switch configurations.

The device features 100 % R_g and UIS testing, drain-connected tab for direct heatsinking, and parametric verification aligned with AEC-Q101 stress test conditions. Thermal resistance from junction-to-case is 1.1 °C/W, supporting high-power operation when mounted on PCB copper areas per Vishay's DPAK pad recommendations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection
R_DS(on) @ V_GS = -10 V	0.013 Ω - Enables <1 W conduction loss at -50 A, critical for thermally constrained modules
R_DS(on) @ V_GS = -4.5 V	0.022 Ω - Ensures functional switching with 5 V microcontroller GPIO without level shifters
I_D (continuous)	-50 A @ T_C = 25 °C - Supports high-current loads like HVAC actuators and lighting drivers
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0
E_AS	80 mJ - Withstands inductive kickback from solenoids and motors without external snubbers
R_thJC	1.1 °C/W - Allows >100 W power dissipation with minimal case-to-heatsink ΔT

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≤±20 V drive; 3 Ω typical gate resistance limits ringing
D	Drain	Main current path input; internally connected to metal tab for low-inductance, low-thermal-resistance mounting
S	Source	Reference node for gate drive; connects to load return or ground in high-side switch topology

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for efficient PWM switching in 10–100 kHz range
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and ESD per Rev. D test plan
100 % R_g tested	Ensures consistent gate drive timing and eliminates outliers affecting system-level timing margins
Drain-connected tab	Enables direct thermal coupling to PCB copper, achieving 1.1 °C/W R_thJC without external heatsink
Integrated body diode	V_SD = -1.5 V @ -50 A supports freewheeling in relay replacement and reverse-polarity protection circuits

Applications

Automotive Body Control Module (BCM)	Industrial Power Distribution Unit (PDU)
Use Scenario: Controlling 12 V DC loads including door locks, window lifts, and interior lighting in modern vehicle architectures. IC Role / Device Role / Timing Role: High-side load switch replacing electromechanical relays; driven by 5 V microcontroller GPIO with no level shifter. Use Value: Eliminates relay coil power consumption and contact wear while maintaining -50 A surge capability and AEC-Q101 compliance.	Use Scenario: Remote-controlled branch circuit protection in factory automation panels with 24 V DC bus. IC Role / Device Role / Timing Role: Solid-state circuit breaker with fast turn-off (<60 ns fall time) and built-in avalanche ruggedness. Use Value: Replaces fuses and contactors with programmable, diagnostic-capable switching and 80 mJ single-pulse avalanche energy tolerance.
Truck & Bus Battery Disconnect System	Off-Highway Equipment Power Management
Use Scenario: Isolating auxiliary battery banks during engine cranking or fault conditions in heavy-duty vehicles. IC Role / Device Role / Timing Role: High-current, high-temperature P-channel switch operating continuously at +150 °C ambient. Use Value: Maintains 0.020 Ω R_DS(on) at +175 °C junction, enabling stable 45 W power dissipation without derating.	Use Scenario: Managing power to hydraulic valve solenoids and sensor arrays in construction and agricultural machinery. IC Role / Device Role / Timing Role: Load switch with integrated freewheeling diode to suppress inductive spikes from 24 V solenoid coils. Use Value: Reduces external component count by eliminating discrete flyback diodes while sustaining -1.5 V V_SD at full -50 A current.

Automotive Body Control Module (BCM)

Industrial Power Distribution Unit (PDU)

Use Scenario: Controlling 12 V DC loads including door locks, window lifts, and interior lighting in modern vehicle architectures.

IC Role / Device Role / Timing Role: High-side load switch replacing electromechanical relays; driven by 5 V microcontroller GPIO with no level shifter.

Use Value: Eliminates relay coil power consumption and contact wear while maintaining -50 A surge capability and AEC-Q101 compliance.

Use Scenario: Remote-controlled branch circuit protection in factory automation panels with 24 V DC bus.

IC Role / Device Role / Timing Role: Solid-state circuit breaker with fast turn-off (<60 ns fall time) and built-in avalanche ruggedness.

Use Value: Replaces fuses and contactors with programmable, diagnostic-capable switching and 80 mJ single-pulse avalanche energy tolerance.

Truck & Bus Battery Disconnect System

Off-Highway Equipment Power Management

Use Scenario: Isolating auxiliary battery banks during engine cranking or fault conditions in heavy-duty vehicles.

IC Role / Device Role / Timing Role: High-current, high-temperature P-channel switch operating continuously at +150 °C ambient.

Use Value: Maintains 0.020 Ω R_DS(on) at +175 °C junction, enabling stable 45 W power dissipation without derating.

Use Scenario: Managing power to hydraulic valve solenoids and sensor arrays in construction and agricultural machinery.

IC Role / Device Role / Timing Role: Load switch with integrated freewheeling diode to suppress inductive spikes from 24 V solenoid coils.

Use Value: Reduces external component count by eliminating discrete flyback diodes while sustaining -1.5 V V_SD at full -50 A current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V; TO-220 package; no AEC-Q101 qualification; R_thJC = 1.7 °C/W	Lacks automotive qualification and has higher thermal resistance; suitable only for industrial non-automotive use	Select only if AEC-Q101 is not required and TO-220 mounting is preferred over surface-mount TO-252
DMTH4007LPSQ-13	R_DS(on) = 0.0075 Ω @ -10 V; same TO-252 package; AEC-Q101 qualified; lower V_GS(th) (-1.0 to -2.0 V)	Higher cost; tighter gate threshold improves noise immunity but increases risk of unintended turn-on with leakage	Prefer when lower R_DS(on) justifies premium pricing and gate drive can be stabilized against noise

Compared with IRF4905PbF and DMTH4007LPSQ-13, the SQD50P04-13L_GE3 offers optimal balance of automotive qualification, thermal performance (1.1 °C/W), and gate drive compatibility with 5 V controllers-making it ideal for space-constrained, high-temperature BCM and PDU designs where reliability and manufacturability are prioritized over marginal R_DS(on) reduction.

Availability

SQD50P04-13L_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial power distribution units, and off-highway equipment power management requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQD50P04-13L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQD50P04-13L_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET product line, engineered specifically for high-current, high-temperature DC load switching in demanding vehicular environments.

FAQ

What is the maximum continuous drain current rating for SQD50P04-13L_GE3 at 125 °C case temperature?

The SQD50P04-13L_GE3 supports -39 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 45 W maximum power dissipation limit at that temperature. Engineers must verify PCB copper area and airflow to sustain this current reliably in end systems.

Is SQD50P04-13L_GE3 suitable for high-side switching with 3.3 V microcontroller GPIO?

The SQD50P04-13L_GE3 has a gate threshold voltage range of -1.5 V to -2.5 V and delivers 0.022 Ω R_DS(on) at V_GS = -4.5 V, making it compatible with 3.3 V logic when used with an inverting driver stage. Direct 3.3 V drive is insufficient for full enhancement; a dedicated gate driver or level-shifting circuit is required to ensure robust turn-on and minimize conduction losses in the SQD50P04-13L_GE3.

Does SQD50P04-13L_GE3 include avalanche energy rating, and what is its value?

Yes, the SQD50P04-13L_GE3 is rated for 80 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, as confirmed in its Absolute Maximum Ratings table. This specification validates its ability to absorb inductive energy during switching transients-critical for driving solenoids, motors, and other inductive loads without external protection components in automotive and industrial applications using the SQD50P04-13L_GE3.

What is the thermal resistance from junction to ambient (R_thJA) for SQD50P04-13L_GE3 under standard PCB mounting conditions?

The SQD50P04-13L_GE3 exhibits 50 °C/W junction-to-ambient thermal resistance when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides, per its Thermal Resistance Ratings table. This value assumes the recommended DPAK pad layout from Vishay Application Note 826 and is essential for calculating worst-case junction temperature rise in thermally constrained layouts using the SQD50P04-13L_GE3.

How is the drain terminal connected in the TO-252 package of SQD50P04-13L_GE3?

In the SQD50P04-13L_GE3, the drain is internally connected to the exposed metal tab of the TO-252AA package. This design provides low-inductance, low-thermal-resistance conduction to the PCB copper pour, enabling efficient heat transfer and minimizing switching loop inductance-key advantages for high-current, high-frequency switching applications using the SQD50P04-13L_GE3.

SQD50P04-13L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3590 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50P04-13L_GE3 FAQ

1.How can I place an order for SQD50P04-13L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50P04-13L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50P04-13L_GE3 reliable?

The price and inventory of SQD50P04-13L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50P04-13L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD50P04-13L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50P04-13L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50P04-13L_GE3?

SQD50P04-13L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50P04-13L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50P04-13L_GE3?

For technical support, including SQD50P04-13L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50P04-13L_GE3 requirements.

6.How does Aetrix verify that SQD50P04-13L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50P04-13L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50P04-13L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD50P04-13L_GE3?

All SQD50P04-13L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50P04-13L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50P04-13L_GE3 part is unused and in its original packaging.

Return procedure for SQD50P04-13L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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