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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD50P08-28-T4_GE3

Name: SQD50P08-28-T4_GE3
Brand: Vishay Siliconix
SKU: SQD50P08-28-T4_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD50P08-28-T4_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD50P08-28-T4_GE3.pdf

Description:: MOSFET P-CH 80V 48A TO252AA

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Product details

Overview

SQD50P08-28-T4_GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -80 V drain-source voltage, 48 A continuous drain current at 25 °C, and 0.028 Ω R_DS(on) at V_GS = -10 V. It is AEC-Q101 qualified, halogen-free, and designed for high-reliability automotive load switching in under-hood modules, body control units, and DC motor drives.

For engineers reviewing the SQD50P08-28-T4_GE3 datasheet, SQD50P08-28-T4_GE3 pinout, SQD50P08-28-T4_GE3 application, or SQD50P08-28-T4_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, TO-252 package layout, and validated automotive-grade alternatives - all confirmed against Vishay Document #63215 and official package drawing #64424.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and robust avalanche energy rating (100 mJ). Its gate threshold voltage range of -2.5 V to -3.5 V ensures stable turn-on across temperature (-55 °C to +175 °C junction), while 100 % R_g and UIS testing guarantees production-level ruggedness.

The device features integrated source-drain diode with -0.82 V typical forward voltage at -10 A, and exhibits 95 nC total gate charge at V_GS = -10 V, V_DS = -40 V. Thermal resistance from junction-to-case is 1.1 °C/W, enabling high-power operation when mounted on PCB copper areas per Vishay Application Note 826.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump protection
R_DS(on) @ V_GS = -10 V	0.028 Ω - Enables ≤ 16.9 W conduction loss at 48 A, critical for thermally constrained ECUs
I_D Continuous @ T_C = 25 °C	-48 A - Supports high-current solenoid, fan, and heater control without external heatsink
E_AS	100 mJ - Withstands single-pulse inductive energy from relay or motor coil de-energization
R_thJC	1.1 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink for >100 W power dissipation
Q_g	95 nC - Determines gate driver current requirement (~1–2 A peak) for <25 ns switching transitions
T_J Range	-55 °C to +175 °C - Qualified for under-hood placement in engine management and transmission control modules

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for enhanced thermal transfer. Dimensions per Vishay Drawing #64424: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side return path; connects to ground or negative rail; carries full load current
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires -10 V bias for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output (D)	Connected internally to exposed metal tab; must be soldered to large copper area for thermal management

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTGB, HTRB, and UHAST
TrenchFET® architecture	Delivers 23 % lower R_DS(on) vs. planar P-channel equivalents at same die size and voltage rating
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for global automotive supply chain traceability
Drain-connected tab	Enables direct thermal interface to PCB copper; reduces junction-to-ambient thermal resistance by up to 40 %

Applications

Engine Control Unit Load Switching	Automotive Body Control Module
Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with fast turn-off to prevent coil saturation and back-EMF damage. Use Value: 175 °C junction rating allows placement near engine bay electronics; 100 mJ E_AS absorbs inductive kickback without snubber circuits.	Use Scenario: Power distribution to door locks, window lift motors, and interior lighting in BCMs. IC Role / Device Role / Timing Role: Low-R_DS(on) load switch enabling PWM dimming and soft-start sequencing via gate drive timing. Use Value: 0.028 Ω R_DS(on) limits voltage drop to <0.3 V at 10 A, preserving battery voltage margin during cold-crank conditions.
DC Motor Reversing Circuit	12 V/24 V Battery Protection
Use Scenario: Half-bridge configuration for bidirectional control of radiator fans or HVAC blowers. IC Role / Device Role / Timing Role: Synchronous P-channel switch paired with N-channel counterpart; gate timing coordinated to avoid shoot-through. Use Value: Matched Q_g (95 nC) and fast switching (t_f = 16–24 ns) enable precise dead-time control and reduced conduction losses.	Use Scenario: Reverse polarity and overcurrent protection in auxiliary battery systems and jump-start circuits. IC Role / Device Role / Timing Role: Back-to-back P-channel configuration providing bidirectional blocking and controlled turn-on during fault recovery. Use Value: -80 V V_DS withstands 24 V system transients and load dump spikes up to ISO 7637-2 Pulse 5a (120 V peak).

Engine Control Unit Load Switching

Automotive Body Control Module

Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with fast turn-off to prevent coil saturation and back-EMF damage.

Use Value: 175 °C junction rating allows placement near engine bay electronics; 100 mJ E_AS absorbs inductive kickback without snubber circuits.

Use Scenario: Power distribution to door locks, window lift motors, and interior lighting in BCMs.

IC Role / Device Role / Timing Role: Low-R_DS(on) load switch enabling PWM dimming and soft-start sequencing via gate drive timing.

Use Value: 0.028 Ω R_DS(on) limits voltage drop to <0.3 V at 10 A, preserving battery voltage margin during cold-crank conditions.

DC Motor Reversing Circuit

12 V/24 V Battery Protection

Use Scenario: Half-bridge configuration for bidirectional control of radiator fans or HVAC blowers.

IC Role / Device Role / Timing Role: Synchronous P-channel switch paired with N-channel counterpart; gate timing coordinated to avoid shoot-through.

Use Value: Matched Q_g (95 nC) and fast switching (t_f = 16–24 ns) enable precise dead-time control and reduced conduction losses.

Use Scenario: Reverse polarity and overcurrent protection in auxiliary battery systems and jump-start circuits.

IC Role / Device Role / Timing Role: Back-to-back P-channel configuration providing bidirectional blocking and controlled turn-on during fault recovery.

Use Value: -80 V V_DS withstands 24 V system transients and load dump spikes up to ISO 7637-2 Pulse 5a (120 V peak).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V but only rated to 150 °C; no AEC-Q101 qualification; higher C_iss (3200 pF)	Limited to industrial or non-safety-critical automotive after-market use; lacks automotive reliability validation	Select only if AEC-Q101 compliance is not required and thermal margin exceeds 25 °C
STP55P06	60 V rating, 55 A ID, R_DS(on) = 0.018 Ω; AEC-Q101 qualified; TO-220 package (higher R_thJA)	Requires mechanical mounting and heatsink; unsuitable for space-constrained DPAK layouts	Prefer when higher current and lower R_DS(on) justify larger footprint and added assembly cost

Compared with IRF4905PbF and STP55P06, the SQD50P08-28-T4_GE3 uniquely balances -80 V rating, AEC-Q101 compliance, TO-252 thermal efficiency, and 0.028 Ω on-resistance - making it optimal for compact, high-temperature automotive power switches where qualification and board area are both critical.

Availability

SQD50P08-28-T4_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine management systems, and 24 V industrial power supplies requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQD50P08-28-T4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD50P08-28-T4_GE3 belongs to Vishay's TrenchFET® automotive-qualified P-channel MOSFET family, engineered specifically for high-efficiency, high-reliability load switching in harsh-temperature vehicle subsystems.

FAQ

What is the maximum continuous drain current for SQD50P08-28-T4_GE3 at 125 °C case temperature?

The SQD50P08-28-T4_GE3 supports -28 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation and must be validated against actual PCB copper area and ambient conditions per Vishay Application Note 826.

Is SQD50P08-28-T4_GE3 suitable for high-side switching in 24 V commercial vehicle systems?

Yes, the SQD50P08-28-T4_GE3 is rated for -80 V V_DS, exceeding ISO 7637-2 Pulse 5a load dump requirements (up to 120 V transient). Its -175 °C to +175 °C operating range, AEC-Q101 qualification, and 100 mJ E_AS make it appropriate for 24 V high-side switching in trucks, buses, and off-highway equipment.

Does SQD50P08-28-T4_GE3 require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation during switching. Vishay specifies R_g = 1.73–5.21 Ω (typical 3.47 Ω); a 4.7 Ω surface-mount resistor is commonly used to limit peak gate current to ~2.1 A when driven from a -10 V source, aligning with the 95 nC Q_g requirement for SQD50P08-28-T4_GE3.

How does the drain-connected tab of SQD50P08-28-T4_GE3 impact PCB layout?

The drain is electrically and thermally connected to the exposed metal tab in the TO-252AA package. PCB layout must assign the tab pad to the drain net and connect it to a minimum 1"² copper pour (FR-4, 2 oz) per Vishay's thermal guidelines. Isolating the tab or routing unrelated signals underneath violates thermal and safety design rules for SQD50P08-28-T4_GE3.

What is the typical source-drain diode forward voltage for SQD50P08-28-T4_GE3?

The source-drain diode forward voltage (V_SD) of SQD50P08-28-T4_GE3 is -0.82 V typical at I_F = -10 A and V_GS = 0 V, with a maximum of -1.5 V. This intrinsic body diode enables freewheeling in inductive loads and supports reverse-battery protection configurations without external diodes.

SQD50P08-28-T4_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6035 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD50P08-28-T4_GE3 FAQ

1.How can I place an order for SQD50P08-28-T4_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD50P08-28-T4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD50P08-28-T4_GE3 reliable?

The price and inventory of SQD50P08-28-T4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD50P08-28-T4_GE3 is usually 5 days.

3.What payment methods are accepted for SQD50P08-28-T4_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD50P08-28-T4_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD50P08-28-T4_GE3?

SQD50P08-28-T4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD50P08-28-T4_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD50P08-28-T4_GE3?

For technical support, including SQD50P08-28-T4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD50P08-28-T4_GE3 requirements.

6.How does Aetrix verify that SQD50P08-28-T4_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD50P08-28-T4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD50P08-28-T4_GE3 meets industry standards.

7.What is the process for return or replacement of SQD50P08-28-T4_GE3?

All SQD50P08-28-T4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD50P08-28-T4_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD50P08-28-T4_GE3 part is unused and in its original packaging.

Return procedure for SQD50P08-28-T4_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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