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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD90P04_9M4LT4GE3

Name: SQD90P04_9M4LT4GE3
Brand: Vishay Siliconix
SKU: SQD90P04_9M4LT4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD90P04_9M4LT4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD90P04_9M4LT4GE3.pdf

Description:: MOSFET P-CH 40V 90A TO252AA

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Product details

Overview

SQD90P04_9M4LT4GE3 from Vishay Siliconix is an AEC-Q101-qualified automotive P-channel TrenchFET® MOSFET in TO-252 package, rated for -40 V V_DS, 90 A continuous drain current at T_C = 25 °C, and 0.0094 Ω R_DS(on) at V_GS = -10 V. It operates up to +175 °C junction temperature and features 100 % R_g and UIS testing - deployed in high-reliability 12 V/24 V automotive body control modules.

For engineers reviewing the SQD90P04_9M4LT4GE3 datasheet, SQD90P04_9M4LT4GE3 pinout, SQD90P04_9M4LT4GE3 application, or SQD90P04_9M4LT4GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.1 °C/W), gate charge (Q_g = 103–155 nC), avalanche energy rating (E_AS = 125 mJ), and TO-252 terminal mapping for layout validation and thermal design.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and fast switching in high-side load switch configurations. Its -1.5 V to -2.5 V gate threshold voltage enables robust turn-on with standard 5 V or 3.3 V logic-level gate drivers in automotive power distribution systems.

The device integrates a co-packaged source-drain diode with V_SD = -0.95 to -1.5 V at -50 A, supporting bidirectional current handling in reverse-battery protection and motor freewheeling circuits. Thermal performance is defined by R_thJC = 1.1 °C/W and R_thJA = 50 °C/W on 1"² FR-4 PCB - critical for under-hood thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection
R_DS(on) @ V_GS = -10 V	0.0094 Ω - Enables <1 W conduction loss at 90 A, reducing heatsink requirements
I_D (continuous)	-90 A @ T_C = 25 °C - Supports high-current loads like HVAC blowers and seat motors
E_AS	125 mJ - Withstands inductive energy spikes during load dump or relay de-energization
Q_g	103–155 nC - Determines gate driver power requirement and switching speed in PWM control
T_J max	+175 °C - Qualified for under-hood environments including engine bay and transmission control units
R_thJC	1.1 °C/W - Enables direct thermal coupling to heatsink via exposed drain tab in TO-252 package

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected-to-tab construction. Exposed drain tab provides low-thermal-resistance path to PCB copper pour or external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package tab	Primary thermal and electrical interface - must be soldered to ≥1"² 2 oz. copper area for rated power dissipation
Source	Reference node for channel conduction and body diode cathode	Connected to higher-potential rail in high-side switch; defines V_GS reference for gate drive
Gate	Control electrode for channel inversion	Requires negative V_GS relative to source; sensitive to ESD - needs series gate resistor and clamping

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications per stress test requirements - supports PPAP documentation
TrenchFET® architecture	Delivers 22 % lower R_DS(on) vs. planar P-channel equivalents at same die size - improves power density
100 % R_g and UIS tested	Ensures gate resistance consistency and single-pulse avalanche ruggedness - critical for load-switch reliability
Low R_thJC = 1.1 °C/W	Enables >100 W power dissipation with ≤110 °C junction rise above case - reduces need for forced air cooling
Source-drain diode V_SD	-0.95 V typical at -50 A - minimizes freewheeling losses in brushed DC motor drives

Applications

Reverse-Battery Protection	High-Side Load Switch
Use Scenario: Prevents damage to 12 V vehicle electronics during jump-start misconnection or battery polarity reversal. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in high-side position, conducting only when V_IN > V_OUT. Use Value: Eliminates 0.7 V forward drop of Schottky diodes - saves >5 W heat at 70 A, enabling compact enclosure design.	Use Scenario: Controlled power delivery to infotainment head units, ADAS cameras, and telematics modules with wake/sleep sequencing. IC Role / Device Role / Timing Role: High-side switch enabling soft-start, current limiting, and fault reporting via gate driver IC. Use Value: 90 A rating supports peak inrush currents; 175 °C rating ensures operation during prolonged engine-off cabin heating cycles.
Motor Freewheeling	DC-DC Converter Synchronous Rectifier
Use Scenario: Bidirectional current path for brushed DC motors in power seats, windows, and sunroofs during direction reversal or braking. IC Role / Device Role / Timing Role: Body diode and channel conduction provide low-loss return path during PWM off-time. Use Value: V_SD = -0.95 V at -50 A reduces freewheeling loss by 40 % vs. discrete Schottky - extends battery runtime.	Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V buck converters for automotive ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET replacing output diode to reduce conduction loss in discontinuous conduction mode. Use Value: 0.0094 Ω R_DS(on) cuts rectifier loss by >65 % at 20 A - improves converter efficiency from 82 % to 91 %.

Reverse-Battery Protection

High-Side Load Switch

Use Scenario: Prevents damage to 12 V vehicle electronics during jump-start misconnection or battery polarity reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in high-side position, conducting only when V_IN > V_OUT.

Use Value: Eliminates 0.7 V forward drop of Schottky diodes - saves >5 W heat at 70 A, enabling compact enclosure design.

Use Scenario: Controlled power delivery to infotainment head units, ADAS cameras, and telematics modules with wake/sleep sequencing.

IC Role / Device Role / Timing Role: High-side switch enabling soft-start, current limiting, and fault reporting via gate driver IC.

Use Value: 90 A rating supports peak inrush currents; 175 °C rating ensures operation during prolonged engine-off cabin heating cycles.

Motor Freewheeling

DC-DC Converter Synchronous Rectifier

Use Scenario: Bidirectional current path for brushed DC motors in power seats, windows, and sunroofs during direction reversal or braking.

IC Role / Device Role / Timing Role: Body diode and channel conduction provide low-loss return path during PWM off-time.

Use Value: V_SD = -0.95 V at -50 A reduces freewheeling loss by 40 % vs. discrete Schottky - extends battery runtime.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V buck converters for automotive ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing output diode to reduce conduction loss in discontinuous conduction mode.

Use Value: 0.0094 Ω R_DS(on) cuts rectifier loss by >65 % at 20 A - improves converter efficiency from 82 % to 91 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	Higher R_DS(on) (0.03 Ω @ -10 V), TO-220 package, no AEC-Q101 qualification	Limited to non-automotive industrial use; lacks thermal robustness for under-hood mounting	Select only for cost-sensitive non-automotive designs where 175 °C operation and AEC-Q101 are not required
STP90PF55	Same V_DS (-55 V), higher R_DS(on) (0.012 Ω @ -10 V), TO-220FP package, AEC-Q101 qualified	Lower current rating (-75 A), larger footprint, higher thermal resistance (R_thJC = 1.5 °C/W)	Acceptable for space-constrained automotive modules where TO-252 footprint is unavailable, but requires derating

Compared with IRF9530NPbF and STP90PF55, SQD90P04_9M4LT4GE3 delivers the lowest R_DS(on), smallest surface-mount footprint, and highest continuous current capability among AEC-Q101-qualified P-channel DPAK devices - making it optimal for next-generation automotive power distribution units.

Availability

SQD90P04_9M4LT4GE3 is available at Aetrix Electronics and suitable for automotive body control modules, battery management systems, and motor drive inverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQD90P04_9M4LT4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

SQD90P04_9M4LT4GE3 belongs to Vishay's TrenchFET® automotive-grade P-channel MOSFET family, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQD90P04_9M4LT4GE3 at 125 °C case temperature?

The SQD90P04_9M4LT4GE3 supports -52 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures reliable operation in high-ambient under-hood environments. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C for full -52 A capability.

Does SQD90P04_9M4LT4GE3 support logic-level gate drive?

SQD90P04_9M4LT4GE3 has a gate threshold voltage range of -1.5 V to -2.5 V, enabling turn-on with standard 3.3 V or 5 V logic-level gate drivers when referenced to source potential. However, full R_DS(on) specification (0.0094 Ω) requires V_GS = -10 V - so logic-level operation yields higher on-resistance (0.0160 Ω at -4.5 V) and must be validated for thermal margin in the target application.

Is SQD90P04_9M4LT4GE3 suitable for reverse-polarity protection in 24 V commercial vehicle systems?

Yes, SQD90P04_9M4LT4GE3 is rated for -40 V V_DS, providing 16 V margin above nominal 24 V systems - sufficient for ISO 7637-2 pulse 1 (-100 V, 50 ms) and load-dump transients when combined with appropriate TVS clamping. Its AEC-Q101 qualification and 175 °C rating make it suitable for heavy-duty truck and bus electronic control units.

How is thermal performance characterized for SQD90P04_9M4LT4GE3 in PCB-mounted applications?

SQD90P04_9M4LT4GE3 specifies R_thJA = 50 °C/W when mounted on a 1" × 1" FR-4 PCB with 2 oz. copper on both sides. Its R_thJC = 1.1 °C/W allows direct thermal path from die to heatsink via the exposed drain tab. For production designs, Vishay recommends using Application Note 826's recommended minimum pad layout (10.67 mm × 5.69 mm) to achieve published thermal ratings.

What does "100 % R_g and UIS tested" mean for SQD90P04_9M4LT4GE3?

"100 % R_g tested" means every SQD90P04_9M4LT4GE3 unit undergoes production screening for gate resistance (1.4–4.2 Ω), ensuring consistent switching behavior. "100 % UIS tested" confirms each device passes single-pulse unclamped inductive switching stress at rated current and voltage - verifying avalanche ruggedness without degradation. Both tests are part of Vishay's AEC-Q101-compliant automotive qualification flow.

SQD90P04_9M4LT4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6675 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD90P04_9M4LT4GE3 FAQ

1.How can I place an order for SQD90P04_9M4LT4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD90P04_9M4LT4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD90P04_9M4LT4GE3 reliable?

The price and inventory of SQD90P04_9M4LT4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD90P04_9M4LT4GE3 is usually 5 days.

3.What payment methods are accepted for SQD90P04_9M4LT4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD90P04_9M4LT4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD90P04_9M4LT4GE3?

SQD90P04_9M4LT4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD90P04_9M4LT4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD90P04_9M4LT4GE3?

For technical support, including SQD90P04_9M4LT4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD90P04_9M4LT4GE3 requirements.

6.How does Aetrix verify that SQD90P04_9M4LT4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD90P04_9M4LT4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD90P04_9M4LT4GE3 meets industry standards.

7.What is the process for return or replacement of SQD90P04_9M4LT4GE3?

All SQD90P04_9M4LT4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD90P04_9M4LT4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD90P04_9M4LT4GE3 part is unused and in its original packaging.

Return procedure for SQD90P04_9M4LT4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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