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Vishay Siliconix SQD97N06-6M3L_GE3
- Part No.:
- SQD97N06-6M3L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD97N06-6M3L_GE3.pdf
- Description:
- MOSFET N-CH 60V 97A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,152
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Product details
Overview
SQD97N06-6M3L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 97 A continuous drain current at TC = 25 °C, and RDS(on) of 6.3 mΩ at VGS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab for low thermal resistance - deployed in high-current DC motor drives and 12 V/24 V automotive power distribution systems.
For engineers reviewing the SQD97N06-6M3L_GE3 datasheet, SQD97N06-6M3L_GE3 pinout, SQD97N06-6M3L_GE3 application, or SQD97N06-6M3L_GE3 equivalent, key selection criteria include its 6.3 mΩ RDS(on) at 10 V gate drive, 100% UIS and Rg testing, AEC-Q101 compliance, thermal performance on FR-4 PCBs, and suitability for high-reliability 12–24 V automotive switching loads.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 82–125 nC). Its design supports high pulsed current capability (IDM = 290 A) and robust avalanche energy rating (EAS = 101 mJ), enabling reliable operation under inductive load switching transients common in automotive solenoid and motor control circuits.
The device integrates a monolithic body diode with forward voltage VSD = 0.9–1.5 V at IF = 50 A and zero gate voltage, supporting freewheeling in half-bridge and H-bridge topologies. Thermal design is anchored by RthJC = 1.1 °C/W and RthJA = 50 °C/W (1"² FR-4 PCB), allowing efficient heat transfer from junction to case and ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 24 V automotive systems including load dump conditions. |
| RDS(on) | 6.3 mΩ @ VGS = 10 V, ID = 25 A - Enables <1.6 W conduction loss at 64 A, critical for thermally constrained modules. |
| ID (cont.) | 97 A @ TC = 25 °C - Supports high-current DC loads such as radiator fans, fuel pumps, and HVAC blowers. |
| TJ max | +175 °C - Meets under-hood thermal requirements per AEC-Q101, enabling placement near engines or powertrains. |
| EAS | 101 mJ - Withstands single-pulse inductive energy without failure in relay replacement or motor commutation. |
| Qg | 82–125 nC - Determines gate driver power requirement; enables efficient 100 kHz+ PWM switching with moderate drive strength. |
| VGS(th) | 1.5–2.5 V - Ensures turn-on compatibility with 3.3 V and 5 V microcontroller GPIOs using appropriate level shifting. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour. Dimensions per Vishay document 64424: D = 6.0–6.2 mm, E = 6.4–6.7 mm, H = 9.4–10.4 mm, tab area ≈ 4.1 × 4.3 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically and thermally connected to exposed copper pad; must be soldered to ≥1"² 2 oz. FR-4 copper for RthJA = 50 °C/W. |
| Gate | Control input for channel modulation | High-impedance node requiring low-inductance layout; gate resistance Rg = 1–3 Ω limits ringing and dV/dt-induced turn-on. |
| Source | Reference node for gate drive and current return | Common return path for load current and gate drive loop; critical for minimizing noise coupling into control circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per stress test plan. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent gate or avalanche weakness. |
| TrenchFET® architecture | Delivers 15 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained ECUs. |
| Low RthJC = 1.1 °C/W | Enables >90 % of junction heat to flow directly into PCB copper, reducing need for external heatsinks in 40–60 W dissipation applications. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting global automotive manufacturing requirements. |
Applications
| Automotive Body Control Module (BCM) | Engine Cooling Fan Driver |
|---|---|
Use Scenario: Switching 12 V power to door locks, interior lighting, and window lift motors in centralized vehicle body electronics. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 97 A peak with fast turn-on/turn-off timing. Use Value: Low RDS(on) minimizes voltage drop and self-heating during extended duty cycles, extending module lifetime in sealed enclosures. | Use Scenario: Driving brushed DC cooling fans in ICE vehicles, operating continuously at 30–60 A with PWM speed control. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration with freewheeling via integrated body diode. Use Value: 175 °C TJ rating and 101 mJ EAS withstand repeated thermal cycling and inductive kickback during fan startup/stall events. |
| 24 V Commercial Vehicle Power Distribution | Off-Road Equipment Hydraulic Valve Control |
Use Scenario: Replacing electromechanical relays in 24 V truck/trailer power distribution units handling headlamps, air compressors, and auxiliary PTO loads. IC Role / Device Role / Timing Role: Solid-state relay replacement with precise digital control, zero contact bounce, and diagnostic current sensing capability. Use Value: 97 A continuous rating and TO-252 thermal performance enable compact, sealed relay modules without forced airflow or heatsinks. | Use Scenario: Controlling solenoid-actuated hydraulic valves in agricultural and construction machinery operating in dusty, high-vibration environments. IC Role / Device Role / Timing Role: High-current, high-reliability switch interfacing microcontroller PWM outputs to 24 V inductive valve coils. Use Value: AEC-Q101 qualification ensures functional safety compliance; 290 A pulsed current handles coil inrush without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N6LF6AG | RDS(on) = 5.2 mΩ @ 10 V, but only 150 °C TJ max and no AEC-Q101 documentation in public datasheet. | Lower conduction loss, but unsuitable for under-hood locations exceeding 150 °C ambient. | Select when thermal margin allows and AEC-Q101 is not mandated; verify qualification status with ST sales. |
| IRF1405ZLPbF | 60 V, 130 A, RDS(on) = 5.3 mΩ @ 10 V, TO-220 package, no AEC-Q101 or UIS testing stated. | Higher current rating but through-hole mounting and larger footprint; lacks automotive reliability validation. | Prefer for non-automotive industrial designs where board space and qualification are secondary to cost and current headroom. |
Compared with STL110N6LF6AG and IRF1405ZLPbF, the SQD97N06-6M3L_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and TO-252 surface-mount packaging - making it the only choice for thermally demanding, safety-critical automotive power switching where regulatory compliance and long-term reliability are mandatory.
Availability
SQD97N06-6M3L_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine cooling fan drivers, and 24 V commercial vehicle power distribution systems requiring stable component supply across multi-year production programs.
Supply support for SQD97N06-6M3L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD97N06-6M3L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V and 24 V vehicle subsystems with stringent AEC-Q101 reliability requirements.
FAQ
What is the maximum continuous drain current rating for SQD97N06-6M3L_GE3 at 125 °C case temperature?
The SQD97N06-6M3L_GE3 supports 56 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 175 °C maximum junction temperature limit when mounted on standard PCB layouts.
Is SQD97N06-6M3L_GE3 suitable for use in high-frequency PWM motor control above 50 kHz?
Yes, the SQD97N06-6M3L_GE3 supports high-frequency PWM operation with total gate charge Qg = 82–125 nC and fast switching times (td(on) = 14–21 ns, tf = 7–11 ns). When paired with a capable gate driver and optimized PCB layout, it delivers efficient switching up to 100 kHz in BLDC and brushed DC motor control applications.
Does SQD97N06-6M3L_GE3 include an integrated body diode, and what is its forward voltage?
Yes, the SQD97N06-6M3L_GE3 integrates a parasitic body diode with forward voltage VSD = 0.9–1.5 V at IF = 50 A and VGS = 0 V. This diode enables freewheeling in half-bridge configurations and supports synchronous rectification in certain topologies, though external Schottky diodes may be preferred for ultra-low VF requirements.
What is the gate threshold voltage range for SQD97N06-6M3L_GE3, and how does it affect microcontroller compatibility?
The gate threshold voltage VGS(th) for SQD97N06-6M3L_GE3 is 1.5–2.5 V at ID = 250 μA. This low threshold enables direct drive from 3.3 V or 5 V logic outputs, but full enhancement requires VGS ≥ 10 V to achieve rated RDS(on); therefore, level-shifting or dedicated gate drivers are recommended for optimal conduction efficiency.
How is thermal performance characterized for SQD97N06-6M3L_GE3 on standard PCBs?
SQD97N06-6M3L_GE3 achieves RthJA = 50 °C/W when mounted on a 1"² FR-4 PCB with 2 oz. copper on both sides, and RthJC = 1.1 °C/W to the drain tab. These values are validated per JEDEC JESD51-2 and JESD51-14 standards, enabling accurate junction temperature prediction in real-world automotive PCB layouts.
SQD97N06-6M3L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 125 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD97N06-6M3L_GE3 FAQ
1.How can I place an order for SQD97N06-6M3L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD97N06-6M3L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD97N06-6M3L_GE3 reliable?
The price and inventory of SQD97N06-6M3L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD97N06-6M3L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD97N06-6M3L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD97N06-6M3L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD97N06-6M3L_GE3?
SQD97N06-6M3L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD97N06-6M3L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD97N06-6M3L_GE3?
For technical support, including SQD97N06-6M3L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD97N06-6M3L_GE3 requirements.
6.How does Aetrix verify that SQD97N06-6M3L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD97N06-6M3L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD97N06-6M3L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD97N06-6M3L_GE3?
All SQD97N06-6M3L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD97N06-6M3L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD97N06-6M3L_GE3 part is unused and in its original packaging.
Return procedure for SQD97N06-6M3L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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