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Vishay Siliconix SQJ118EP-T1_GE3
- Part No.:
- SQJ118EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ118EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 100V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:8,108
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Product details
Overview
SQJ118EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 100 V VDS, 175 °C maximum junction temperature, and 0.0164 Ω typical RDS(on) at VGS = 10 V and ID = 15 A - designed for high-efficiency DC-DC converters and motor control in engine bay power modules.
For engineers reviewing the SQJ118EP-T1_GE3 datasheet, SQJ118EP-T1_GE3 pinout, SQJ118EP-T1_GE3 application, or SQJ118EP-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, Qgd/Qgs ratio < 1 for optimized switching, 100 % Rg and UIS testing, and PowerPAK SO-8L package thermal performance (RthJC = 2 °C/W).
Technical Context
This MOSFET employs a trench-based silicon structure enabling low on-resistance and fast switching with controlled gate charge distribution: Qgd = 7 nC and Qgs = 9 nC yield a Qgd/Qgs ratio of 0.78, reducing Miller-induced turn-off delay. Its body diode exhibits trr = 38–76 ns and Qrr = 54–108 nC under 5 A/100 A/μs conditions.
Thermally, it supports continuous operation up to +175 °C junction temperature and delivers 500 W maximum power dissipation at TC = 25 °C, enabled by low RthJC = 2 °C/W and optimized copper-exposed drain pad in the PowerPAK SO-8L package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V and 60 V nominal bus systems with 20 %+ voltage margin for transients |
| RDS(on) @ 10 V | 0.0164 Ω (typ) - enables ≤ 2.5 W conduction loss at 30 A continuous drain current |
| ID (TC = 25 °C) | 38 A - rated for high-current power stages without forced air cooling |
| Qgd/Qgs ratio | < 1 (0.78) - minimizes voltage-dependent Miller plateau duration and improves hard-switching robustness |
| RthJC | 2 °C/W - allows direct heatsinking via exposed drain pad for high-power density layouts |
| AEC-Q101 qualified | Yes - validated for automotive powertrain and chassis applications per stress test requirements |
| TJ max | +175 °C - enables placement in high-ambient environments such as near engines or inverters |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), 6.15 mm × 4.90 mm footprint, thermally enhanced with exposed copper drain pad on bottom side. Pin 1 marked; lead (Pb)-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 0.6–1.8 Ω - compatible with standard gate drivers without external series resistance |
| 5, 6 | Drain (D) | Two drain terminals connected to exposed copper pad - primary thermal path and high-current return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 17 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained modules |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage and avalanche energy handling (EAS = 24 mJ) in real-world fault conditions |
| Qgd/Qgs < 1 | Reduces switching losses by 12–18 % in hard-switched topologies compared to MOSFETs with Qgd/Qgs > 1.2 |
| Exposed drain pad | Enables direct thermal interface to PCB copper or heatsink - achieves RthJA = 42 °C/W on 1"² FR4 board |
| AEC-Q101 qualification | Validated across temperature cycling, HTRB, UHAST, and ESD (HBM ≥ 2 kV) for automotive production use |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) Motor Drivers |
|---|---|
Use Scenario: 12 V–48 V bidirectional buck-boost converter in 48 V mild-hybrid systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz with 50 ns dead-time control. Use Value: Low RDS(on) and fast tf = 4–8 ns minimize conduction and switching losses, enabling >96 % peak efficiency at 5 kW output. |
Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS units. IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode commutation during PWM freewheeling. Use Value: Body diode trr = 38–76 ns and Qrr = 54–108 nC reduce reverse recovery losses and EMI during phase-current reversal. |
| On-Board Charger (OBC) PFC Stage | Engine Control Unit (ECU) Load Switches |
Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC front-end. IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) with 65 kHz switching frequency. Use Value: Optimized Ciss = 2073–2903 pF and low Qg = 31–47 nC enable efficient zero-voltage switching (ZVS) assist and reduce driver power demand. |
Use Scenario: High-reliability 12 V load switch for fuel pump, radiator fan, or solenoid control in engine management. IC Role / Device Role / Timing Role: Protected high-side switch with built-in overcurrent and thermal shutdown. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure stable operation in under-hood ambient up to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1104SPBF | RDS(on) = 0.022 Ω (10 V), no AEC-Q101 qualification, TO-220AB package | Lacks automotive qualification; higher RthJA (62 °C/W) limits power density | Use only in non-automotive industrial or consumer designs where qualification and thermal performance are not critical |
| STL130N10F7 | RDS(on) = 0.013 Ω (10 V), AEC-Q101 qualified, PowerFLAT 5x6 package, no exposed drain | Lower RDS(on) but lacks exposed drain pad - RthJC = 3.5 °C/W vs. 2 °C/W | Prefer when lowest conduction loss is priority and thermal path is managed via top-side heatsinking |
Compared with IRF1104SPBF and STL130N10F7, SQJ118EP-T1_GE3 uniquely balances AEC-Q101 compliance, ultra-low RthJC, and optimized Qgd/Qgs for high-frequency automotive power stages - making it optimal for space- and thermally constrained modules requiring both reliability and efficiency.
Availability
SQJ118EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drives, and on-board charger PFC stages requiring stable component supply and full AEC-Q101 traceability.
Supply support for SQJ118EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ118EP-T1_GE3 belongs to Vishay's TrenchFET Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-reliability power conversion in demanding under-hood and battery-electric vehicle systems.
FAQ
What is the maximum continuous drain current rating for SQJ118EP-T1_GE3 at 125 °C case temperature?
The SQJ118EP-T1_GE3 supports 22 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation within safe junction temperature bounds. The SQJ118EP-T1_GE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling robust design margins in high-ambient automotive environments.
Does SQJ118EP-T1_GE3 have an integrated body diode, and what are its key recovery characteristics?
Yes, SQJ118EP-T1_GE3 includes a monolithic body diode with trr = 38–76 ns and Qrr = 54–108 nC under IF = 5 A and di/dt = 100 A/μs conditions. These values are measured and guaranteed per datasheet specifications. The SQJ118EP-T1_GE3 body diode is optimized for synchronous rectification and freewheeling in motor drive and converter applications, minimizing reverse recovery losses and associated EMI.
Is SQJ118EP-T1_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs like SQJ852EP or SQJQ910EL?
No, SQJ118EP-T1_GE3 is not pin-compatible with SQJ852EP or SQJQ910EL. While all three use the PowerPAK SO-8L outline, SQJ118EP-T1_GE3 has five source pins (pins 1,2,3,7,8), one gate (pin 4), and two drain pins (pins 5,6); SQJ852EP uses a different pin assignment (e.g., gate on pin 1), and SQJQ910EL is a dual-die package with distinct terminal mapping. Always verify pinout diagrams from official Vishay documentation before layout reuse. The SQJ118EP-T1_GE3 pin configuration is fixed per its datasheet Figure 2.
What is the gate threshold voltage range for SQJ118EP-T1_GE3, and how does it affect drive circuit design?
The gate threshold voltage VGS(th) for SQJ118EP-T1_GE3 is 2.0–3.5 V (min–max) at ID = 250 μA, with typical value 2.7 V. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. Because the SQJ118EP-T1_GE3 is fully enhanced at VGS ≥ 10 V, drive circuits must deliver ≥ 10 V to achieve rated RDS(on); using 5 V may result in elevated on-resistance and thermal stress. The SQJ118EP-T1_GE3 datasheet specifies RDS(on) only at VGS = 10 V.
How is thermal performance validated for SQJ118EP-T1_GE3, and what is the significance of RthJC = 2 °C/W?
SQJ118EP-T1_GE3 thermal resistance RthJC = 2 °C/W is measured per JESD51-14 standard with the device mounted on a cold plate, representing the junction-to-case (drain pad) path. This low value confirms highly efficient heat transfer from die to PCB or heatsink via the exposed copper drain. In practice, this enables the SQJ118EP-T1_GE3 to dissipate up to 500 W at TC = 25 °C - critical for compact automotive power modules where airflow is limited. The SQJ118EP-T1_GE3 thermal data is validated across multiple manufacturing lots and test sites per Vishay's composite reliability protocol.
SQJ118EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 19.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ118EP-T1_GE3 FAQ
1.How can I place an order for SQJ118EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ118EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ118EP-T1_GE3 reliable?
The price and inventory of SQJ118EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ118EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ118EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ118EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ118EP-T1_GE3?
SQJ118EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ118EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ118EP-T1_GE3?
For technical support, including SQJ118EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ118EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ118EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ118EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ118EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ118EP-T1_GE3?
All SQJ118EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ118EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ118EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ118EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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