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Vishay Siliconix SQJ138ELP-T1_GE3
- Part No.:
- SQJ138ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ138ELP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:1,597
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Product details
Overview
SQJ138ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 40 V (D–S), 315 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) of 1.5 mΩ at VGS = 10 V and 2.2 mΩ at VGS = 4.5 V, used in high-current DC–DC converter primary-side switching and battery disconnect circuits.
For engineers reviewing the SQJ138ELP-T1_GE3 datasheet, SQJ138ELP-T1_GE3 pinout, SQJ138ELP-T1_GE3 application, or SQJ138ELP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low RDS(on) at 4.5 V gate drive, Qgd/Qgs ratio < 1 for optimized hard-switching efficiency, and PowerPAK SO-8L package thermal performance.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low conduction loss and fast switching with minimized gate charge asymmetry. Its Qgd/Qgs ratio < 1 reduces Miller-induced voltage spikes during turn-off, improving EMI behavior in high-dV/dt automotive environments.
The device is fully characterized for automotive operation: 100 % Rg and UIS tested, qualified per AEC-Q101, and specified across -55 °C to +175 °C TJ. Thermal resistance RthJC = 0.46 °C/W enables high-power density PCB layouts when mounted on copper-clad FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - Supports 12 V and 24 V automotive battery systems with margin against load dump transients. |
| RDS(on) @ 10 V | 1.5 mΩ - Enables ≤ 70 W conduction loss at 315 A, critical for high-efficiency traction inverters and starter generators. |
| RDS(on) @ 4.5 V | 2.2 mΩ - Ensures robust turn-on with standard 5 V logic-level gate drivers in microcontroller-based control modules. |
| Qg / Qgd | 78 nC total gate charge, 14 nC gate-drain charge - Low Qgd minimizes Miller plateau duration and improves switching controllability. |
| ID (Cont.) | 315 A at TC = 25 °C - Delivers high peak current capability for short-duration motor startup and regenerative braking pulses. |
| RthJC | 0.46 °C/W - Allows direct heatsinking via drain pad to internal chassis or copper plane, supporting > 400 W power dissipation with minimal ΔT. |
| EAS | 78 mJ - Withstands single-pulse avalanche energy events common in inductive load switching without failure. |
| TJ Range | -55 °C to +175 °C - Fully rated for under-hood engine compartment and transmission control unit environments. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), thermally enhanced surface-mount package with exposed drain paddle on bottom side; dimensions 6.15 mm × 4.90 mm × 1.05 mm; RoHS-compliant, halogen-free, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with 1.4 Ω typical gate resistance - limits ringing and simplifies gate driver design without external series resistor. |
| 5, 6 | Drain (D) | Two drain terminals connected to large internal copper paddle - provides low-inductance, high-current path to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS testing - eliminates need for additional qualification by Tier 1 suppliers. |
| Qgd/Qgs ratio < 1 | Reduces Miller-induced shoot-through risk and enables stable operation with standard gate drivers in synchronous rectifier and half-bridge topologies. |
| 100 % Rg tested | Ensures consistent gate drive timing and predictable switching waveforms across production lots - critical for EMI compliance in ADAS ECUs. |
| 175 °C TJ rating | Supports compact packaging in space-constrained modules such as 48 V mild-hybrid DC–DC converters without derating. |
| Low Ciss / Crss ratio | 4775 pF Ciss and 128 pF Crss at 25 V - improves dv/dt immunity and reduces gate drive power consumption in high-frequency (>100 kHz) SMPS designs. |
Applications
| Automotive 48 V Mild-Hybrid DC–DC Converter | High-Current Battery Disconnect Switch |
|---|---|
|
Use Scenario: Step-down conversion from 48 V bus to 12 V auxiliary supply in P0/P1 hybrid architectures, operating at 100–200 kHz with >3 kW output. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in dual-phase interleaved buck topology, handling up to 315 A peak current per phase. Use Value: 1.5 mΩ RDS(on) at 10 V reduces conduction loss by >35 % vs. legacy 2.5 mΩ devices, enabling >97 % peak efficiency at full load. |
Use Scenario: High-reliability isolation between high-voltage traction battery and 12 V vehicle network during crash or fault conditions. IC Role / Device Role / Timing Role: Single-pole, normally-open solid-state switch controlled by ASIL-B safety controller, activated within <10 ms of fault detection. Use Value: 78 mJ EAS rating ensures survivability during inductive kickback from solenoid loads, eliminating need for external TVS clamping. |
| Electric Power Steering (EPS) Motor Inverter | On-Board Charger (OBC) Input Stage |
|
Use Scenario: Low-side switching in three-phase inverter driving 1–3 kW brushless motor, subject to frequent PWM commutation and vibration. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET in inverter leg, operated with 4.5 V gate drive from isolated gate driver IC. Use Value: 2.2 mΩ RDS(on) at 4.5 V guarantees full enhancement even with degraded MCU I/O voltage, maintaining torque response under brownout conditions. |
Use Scenario: Active rectification stage in bidirectional OBC AC–DC front-end, conducting >200 A RMS during charging cycles. IC Role / Device Role / Timing Role: Synchronous rectifier in totem-pole PFC circuit, switching at 65–150 kHz with zero-voltage transition control. Use Value: 0.46 °C/W RthJC allows direct thermal coupling to aluminum baseplate, sustaining 250 W dissipation without external heatsink in compact OBC modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.2 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification; RthJC = 1.25 °C/W | Limited to non-automotive industrial UPS and motor drives; unsuitable for under-hood deployment due to lower TJ rating (175 °C not guaranteed). | Select only for cost-sensitive, non-automotive applications where thermal budget permits larger heatsink and qualification is not required. |
| STL220N4LF8AG | RDS(on) = 1.4 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; RthJC = 0.55 °C/W; higher Crss (210 pF) | Better conduction loss but slower switching due to higher Crss; less dv/dt immune in noisy EPS environments. | Prefer for ultra-high-efficiency DC–DC where switching frequency < 100 kHz; avoid in high-di/dt motor control where SQJ138ELP-T1_GE3's low Qgd provides superior noise immunity. |
Compared with IRL1404ZPBF and STL220N4LF8AG, SQJ138ELP-T1_GE3 delivers optimal balance of automotive qualification, ultra-low RDS(on) at both 10 V and 4.5 V, and industry-leading Qgd/Qgs ratio - making it the preferred choice for safety-critical, high-current switching in 12 V/24 V/48 V automotive subsystems.
Availability
SQJ138ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild-hybrid DC–DC conversion, and high-current battery management systems requiring stable component supply across multi-year production programs.
Supply support for SQJ138ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ138ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation electric vehicle subsystems and ADAS power supplies.
FAQ
What is the maximum continuous drain current rating for SQJ138ELP-T1_GE3 at 125 °C case temperature?
The SQJ138ELP-T1_GE3 supports 182 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation, and must be verified against actual board layout and airflow in the final application. SQJ138ELP-T1_GE3 maintains full functionality and AEC-Q101 compliance across this range.
Does SQJ138ELP-T1_GE3 have integrated ESD protection on the gate terminal?
SQJ138ELP-T1_GE3 does not include dedicated on-chip ESD protection structures beyond inherent process-level gate oxide robustness. Gate-source leakage is specified at ±100 nA at ±20 V, and the device requires external gate protection (e.g., Zener clamp or RC snubber) in systems exposed to human-body-model ESD events. SQJ138ELP-T1_GE3 relies on system-level design for ESD resilience per ISO 10605 requirements.
Is SQJ138ELP-T1_GE3 suitable for use in synchronous rectification applications with 5 V gate drive?
Yes - SQJ138ELP-T1_GE3 is explicitly characterized for 4.5 V gate drive, delivering 2.2 mΩ RDS(on) at ID = 15 A. Its low threshold voltage (1.2–2.2 V) and strong transconductance (85 S typical) ensure full enhancement with 5 V logic-level drivers, making it well-suited for synchronous rectifiers in automotive DC–DC converters. SQJ138ELP-T1_GE3 maintains stable operation down to 4.5 V without significant conduction penalty.
What is the body diode reverse recovery charge (Qrr) specification for SQJ138ELP-T1_GE3?
The body diode reverse recovery charge Qrr for SQJ138ELP-T1_GE3 is 50–100 nC, measured at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This low Qrr value minimizes switching losses and voltage overshoot during freewheeling transitions in hard-switched topologies. SQJ138ELP-T1_GE3's body diode is optimized for fast recovery, supporting efficient operation in synchronous buck and LLC resonant converters.
Can SQJ138ELP-T1_GE3 be used in parallel configurations for higher current handling?
Yes - SQJ138ELP-T1_GE3 features positive temperature coefficient of RDS(on), enabling stable current sharing in parallel configurations. Its matched threshold voltage (1.2–2.2 V) and low gate resistance (0.7–2.1 Ω) reduce dynamic imbalance. For reliable paralleling, use identical PCB layout, symmetric gate drive routing, and Kelvin-source connections. SQJ138ELP-T1_GE3 has been validated in dual-device parallel setups for >500 A applications in commercial vehicle DC–DC modules.
SQJ138ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 315A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 117 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6685 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ138ELP-T1_GE3 FAQ
1.How can I place an order for SQJ138ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ138ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ138ELP-T1_GE3 reliable?
The price and inventory of SQJ138ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ138ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ138ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ138ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ138ELP-T1_GE3?
SQJ138ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ138ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ138ELP-T1_GE3?
For technical support, including SQJ138ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ138ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ138ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ138ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ138ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ138ELP-T1_GE3?
All SQJ138ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ138ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ138ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ138ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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