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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ140ELP-T1_GE3

Name: SQJ140ELP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ140ELP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ140ELP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ140ELP-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Product details

Overview

SQJ140ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 40 V V_DS, 2.14 mΩ R_DS(on) at 10 V V_GS, and 253 A continuous drain current at T_C = 25 °C, housed in a PowerPAK® SO-8L package. It delivers high-current switching for 12 V/24 V automotive powertrain and body electronics.

For engineers reviewing the SQJ140ELP-T1_GE3 datasheet, SQJ140ELP-T1_GE3 pinout, SQJ140ELP-T1_GE3 application, or SQJ140ELP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, low gate charge (58 nC typ), and robust UIS testing-critical for motor control, DC-DC converters, and load switch designs requiring high reliability under thermal stress.

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching. Its R_DS(on) remains stable up to 175 °C, and it features integrated body diode with 40 ns typical reverse recovery time and 36 nC Q_rr, enabling efficient synchronous rectification and freewheeling in high-frequency converters.

The device uses a thermally enhanced PowerPAK® SO-8L package with exposed-drain thermal pad and 0.59 °C/W R_thJC, supporting high-power density layouts. Gate resistance is tightly controlled (0.8–2.4 Ω), ensuring predictable turn-on/turn-off timing (t_d(on) = 13 ns typ, t_f = 7 ns typ) under 1 Ω drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) @ 10 V	2.14 mΩ - Enables ≤ 1.1 W conduction loss at 253 A, reducing heatsink requirements in high-current switches.
I_D (continuous)	253 A @ T_C = 25 °C - Supports high-power loads such as starter relays, HVAC blowers, and battery disconnects without parallel devices.
Q_g	58 nC (typ) - Low gate drive energy reduces controller loading and enables efficient operation with standard gate drivers like UCC27531.
T_J range	−55 to +175 °C - Fully rated for under-hood environments including engine control modules and transmission control units.
AEC-Q101	Qualified - Validated for automotive applications per stress test requirements including HTGB, HTRB, and temperature cycling.
R_thJC	0.59 °C/W - Enables direct thermal coupling to PCB copper or heatsink, critical for maintaining safe junction temperature in compact modules.

Pinout & Package

PowerPAK® SO-8L (PPKSO8LWLA) package with exposed drain thermal pad on bottom side; 5 mm × 6.15 mm footprint; 1.05 mm nominal height; RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (S)	Common source connection; pins 1/2/3/7/8 are internally bonded and electrically tied to minimize source inductance in high-di/dt switching.
4	Gate (G)	Control input; requires < ±20 V rating and low-impedance drive to achieve specified 13 ns turn-on delay and 7 ns fall time.
5, 6	Drain (D)	Main power path; pins 5/6 connect to exposed copper thermal pad-must be soldered to large PCB copper area for thermal management.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 2.14 mΩ R_DS(on) at 10 V while maintaining ruggedness against avalanche energy (66 mJ E_AS) and UIS stress.
100 % R_g and UIS tested	Ensures gate resistance consistency and single-pulse avalanche capability across all units-critical for safety-critical load switches.
Exposed-drain thermal pad	Enables 0.59 °C/W junction-to-case thermal resistance, allowing >200 W power dissipation with minimal ΔT between die and PCB.
Body diode with low Q_rr	36 nC reverse recovery charge supports efficient freewheeling in buck converters and motor drives without external Schottky assist.
Lead (Pb)-free & halogen-free	Complies with automotive ELV Directive and RoHS 2011/65/EU, supporting end-of-life recycling and material traceability requirements.

Applications

Engine Start-Stop System	Automotive DC-DC Converter
Use Scenario: Controls battery-to-bus power during engine cranking and restart cycles in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow with fast turn-off (<50 ns) to prevent backfeed during transient events. Use Value: 253 A rating handles peak cranking currents; 175 °C rating ensures operation near hot engine blocks without derating.	Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera modules and infotainment ECUs. IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz with tight dead-time control enabled by low Q_gd (10 nC) and fast fall time (7 ns). Use Value: 2.14 mΩ R_DS(on) minimizes conduction loss at 20 A output; low C_oss (927 pF typ) reduces switching loss at high frequency.
Electric Power Steering (EPS)	Body Control Module (BCM) Load Switch
Use Scenario: Drives three-phase inverter half-bridge legs in 24 V EPS motor controllers. IC Role / Device Role / Timing Role: N-channel high-current switch in H-bridge configuration, requiring matched R_DS(on) and low gate charge for precise PWM control. Use Value: 58 nC Q_g enables clean 20 kHz PWM edge transitions; AEC-Q101 qualification guarantees lifetime reliability in vibration-prone steering column mounting.	Use Scenario: Solid-state replacement for mechanical relays controlling headlights, fog lamps, and cooling fans in modern BCMs. IC Role / Device Role / Timing Role: Low-side or high-side power switch with integrated diagnostics via V_GS(th) stability (1.2–2.2 V) and low IDSS leakage (<1 μA at 25 °C). Use Value: 230 A continuous source current supports lamp inrush; 100 % UIS tested ensures survival during inductive kickback from fan motors.

Engine Start-Stop System

Automotive DC-DC Converter

Use Scenario: Controls battery-to-bus power during engine cranking and restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow with fast turn-off (<50 ns) to prevent backfeed during transient events.

Use Value: 253 A rating handles peak cranking currents; 175 °C rating ensures operation near hot engine blocks without derating.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera modules and infotainment ECUs.

IC Role / Device Role / Timing Role: Low-side switch operating at 300–500 kHz with tight dead-time control enabled by low Q_gd (10 nC) and fast fall time (7 ns).

Use Value: 2.14 mΩ R_DS(on) minimizes conduction loss at 20 A output; low C_oss (927 pF typ) reduces switching loss at high frequency.

Electric Power Steering (EPS)

Body Control Module (BCM) Load Switch

Use Scenario: Drives three-phase inverter half-bridge legs in 24 V EPS motor controllers.

IC Role / Device Role / Timing Role: N-channel high-current switch in H-bridge configuration, requiring matched R_DS(on) and low gate charge for precise PWM control.

Use Value: 58 nC Q_g enables clean 20 kHz PWM edge transitions; AEC-Q101 qualification guarantees lifetime reliability in vibration-prone steering column mounting.

Use Scenario: Solid-state replacement for mechanical relays controlling headlights, fog lamps, and cooling fans in modern BCMs.

IC Role / Device Role / Timing Role: Low-side or high-side power switch with integrated diagnostics via V_GS(th) stability (1.2–2.2 V) and low IDSS leakage (<1 μA at 25 °C).

Use Value: 230 A continuous source current supports lamp inrush; 100 % UIS tested ensures survival during inductive kickback from fan motors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	Higher R_DS(on) (3.2 mΩ @ 10 V), TO-220 package, no AEC-Q101 qualification	Not suitable for under-hood automotive use; limited to industrial or non-safety-critical loads	Select only for cost-sensitive non-automotive designs where thermal performance and qualification are secondary.
STL220N4F7AG	Same V_DS (40 V), lower R_DS(on) (1.7 mΩ), PowerFLAT 5x6 package, AEC-Q101 qualified	Smaller footprint but higher R_thJA (120 °C/W); less effective for >150 W continuous dissipation	Prefer for space-constrained PCBs with moderate power; choose SQJ140ELP-T1_GE3 when thermal headroom and current capacity are primary.

Compared with IRF1407PBF and STL220N4F7AG, SQJ140ELP-T1_GE3 offers the optimal balance of ultra-low R_DS(on), proven automotive qualification, and superior thermal performance in a widely adopted PowerPAK® SO-8L footprint-making it the preferred choice for high-reliability, high-current automotive power switching.

Availability

SQJ140ELP-T1_GE3 is available at Aetrix Electronics and suitable for engine start-stop systems, electric power steering modules, automotive DC-DC converters, and body control module load switching requiring stable component supply and long-term automotive lifecycle support.

Supply support for SQJ140ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ140ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for SQJ140ELP-T1_GE3 at 125 °C case temperature?

The SQJ140ELP-T1_GE3 supports 146 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures reliable operation in under-hood environments where ambient temperatures exceed 85 °C. The device maintains full functionality up to 175 °C junction temperature.

Does SQJ140ELP-T1_GE3 have an integrated body diode, and what are its key characteristics?

Yes, SQJ140ELP-T1_GE3 includes a monolithic body diode with forward voltage of 1.1 V at I_F = 15 A and V_GS = 0 V. Its reverse recovery time is 40 ns (typ), with Q_rr = 36 nC (typ) and I_RM(REC) = 1.5 A. These parameters enable efficient freewheeling in synchronous buck converters and motor drives without external diode supplementation.

Is SQJ140ELP-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQJ140ELP-T1_GE3 is fully AEC-Q101 qualified. This includes stress testing for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling, and unbiased highly accelerated stress test (uHAST). Additionally, 100 % R_g and UIS testing are performed on every production lot to ensure robustness in automotive power switching applications.

What is the gate threshold voltage range for SQJ140ELP-T1_GE3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SQJ140ELP-T1_GE3 is 1.2 V (min) to 2.2 V (max) at I_D = 250 μA. This narrow range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥4.5 V to achieve full enhancement (R_DS(on) = 2.87 mΩ), and 10 V is recommended for minimum on-resistance (2.14 mΩ) and optimal switching speed.

Can SQJ140ELP-T1_GE3 be used in parallel configurations, and what layout considerations apply?

Yes, SQJ140ELP-T1_GE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Layout requires symmetrical gate drive paths with matched trace lengths and impedance, individual gate resistors (≥1 Ω), and shared, low-inductance source and drain copper planes. Thermal coupling via common heatsink or thick PCB copper is essential to maintain uniform junction temperature across devices.

SQJ140ELP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 253A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.14mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4665 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 255W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ140ELP-T1_GE3 FAQ

1.How can I place an order for SQJ140ELP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ140ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ140ELP-T1_GE3 reliable?

The price and inventory of SQJ140ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ140ELP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ140ELP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ140ELP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ140ELP-T1_GE3?

SQJ140ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ140ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ140ELP-T1_GE3?

For technical support, including SQJ140ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ140ELP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ140ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ140ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ140ELP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ140ELP-T1_GE3?

All SQJ140ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ140ELP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ140ELP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ140ELP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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