My Inquiry
My Account
Vishay Siliconix SQJ140EP-T1_GE3
- Part No.:
- SQJ140EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ140EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 266A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,945
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ140EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 40 V (D–S), with RDS(on) = 0.0021 Ω at VGS = 10 V, 175 °C junction temperature rating, and 266 A continuous drain current at TC = 25 °C - used in high-current DC/DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ140EP-T1_GE3 datasheet, SQJ140EP-T1_GE3 pinout, SQJ140EP-T1_GE3 application, or SQJ140EP-T1_GE3 equivalent, this page delivers verified thermal performance data, AEC-Q101 qualification status, gate charge profile (Qg = 49.2 nC typ.), body diode recovery metrics (trr = 52 ns), and PowerPAK SO-8L package mechanical details to support layout, thermal design, and functional safety validation.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low RDS(on) and fast switching, with Qgd/Qgs ratio < 1 to minimize Miller-induced turn-off delay. It features 100 % Rg and UIS testing per AEC-Q101 requirements.
Thermal design is enabled by RthJC = 0.57 °C/W (junction-to-case) and RthJA = 42 °C/W (PCB mount), supporting high-power density operation on FR4 boards. The integrated body diode exhibits trr = 52 ns and Qrr = 40 nC under 10 A / 100 A/μs conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche stress. |
| RDS(on) @ VGS = 10 V | 0.0021 Ω - Enables <1.3 W conduction loss at 25 A, critical for 48 V automotive subsystems. |
| ID (continuous, TC = 25 °C) | 266 A - Supports high-current battery disconnect, starter solenoid drive, and traction inverter precharge circuits. |
| Qg (total gate charge) | 49.2 nC typ. - Determines gate driver power requirement and switching speed in PWM-controlled inverters. |
| tr/tf | 19/9 ns - Fast edge rates reduce switching losses in >100 kHz DC/DC topologies. |
| TJ max | +175 °C - Qualified for under-hood applications including turbocharger actuators and transmission control modules. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including HTGB, HTRB, and UIS. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced dual-side copper-exposed leadframe. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with Rg = 1.85 Ω typ.; low impedance supports fast turn-on with minimal external gate resistor. |
| 5, 6 | Drain (D) | Two drain pads connected to exposed copper on bottom side - primary thermal path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Reduces RDS(on) × Qg figure-of-merit by 25 % vs. prior generation, enabling higher efficiency in 48 V ZVS converters. |
| Qgd/Qgs < 1 | Minimizes Miller plateau duration, improving controllability during hard-switching and reducing risk of shoot-through. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and ruggedness against unclamped inductive switching events in motor drives. |
| Exposed-drain thermal pad | Enables <0.6 °C/W effective thermal resistance when soldered to 2 oz. copper thermal pad - critical for 263 W PD dissipation. |
| Body diode trr = 52 ns | Supports synchronous rectification in buck converters without external Schottky catch diodes in cost-sensitive designs. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC/DC Converter |
|---|---|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with peak currents up to 20 A. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization with precise 1–2 ms pulse width resolution. Use Value: RDS(on) = 0.0021 Ω limits I²R loss to <0.84 W at 20 A, enabling compact heatsink-free layout in space-constrained ECUs. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 3 kW DC/DC converter linking 12 V and 48 V vehicle networks. IC Role / Device Role / Timing Role: High-current, low-RDS(on) N-channel switch operating at 150 kHz with zero-voltage switching. Use Value: Qg = 49.2 nC and tf = 9 ns allow efficient gate driving with <1.5 W driver loss, improving system efficiency by 0.8 % at full load. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive Battery Disconnect Switch |
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter handling 120 A peak phase current. IC Role / Device Role / Timing Role: High-current, high-temperature N-channel MOSFET in low-side position with integrated body diode commutation. Use Value: TJ = 175 °C rating and RthJC = 0.57 °C/W enable sustained 154 A operation at TC = 125 °C without derating. |
Use Scenario: Main isolation switch between Li-ion traction battery and vehicle sub-systems during crash or fault conditions. IC Role / Device Role / Timing Role: Single-pole, high-reliability power switch activated via isolated gate driver for fail-safe disconnection. Use Value: AEC-Q101 qualification and 100 % UIS testing ensure survivability during 35 A single-pulse avalanche events per ISO 7637-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 0.004 Ω @ 10 V; no AEC-Q101 qualification; RthJC = 0.75 °C/W | Not suitable for under-hood use above 150 °C; limited to cabin or chassis-mounted modules. | Select only if cost sensitivity outweighs thermal and qualification requirements; requires larger PCB copper area. |
| STL220N4F7AG | RDS(on) = 0.0019 Ω @ 10 V; AEC-Q101 qualified; PowerFLAT 5x6 package; RthJC = 0.50 °C/W | Higher current capability (280 A) but requires different land pattern and lacks PowerPAK SO-8L footprint compatibility. | Prefer for new designs targeting maximum efficiency; not drop-in due to different pinout and thermal pad geometry. |
Compared with IRL1404ZPBF, SQJ140EP-T1_GE3 delivers 52 % lower conduction loss and certified automotive reliability; versus STL220N4F7AG, it offers identical thermal performance in a legacy-compatible PowerPAK SO-8L footprint but trades 0.0002 Ω RDS(on) for broader supply chain availability.
Availability
SQJ140EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and battery disconnect switches requiring stable component supply across automotive production lifecycles.
Supply support for SQJ140EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ140EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in ASIL-B–compliant vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ140EP-T1_GE3 at 125 °C case temperature?
The SQJ140EP-T1_GE3 supports 154 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation and must be validated against actual board-level thermal resistance in the target application.
Is SQJ140EP-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQJ140EP-T1_GE3 is AEC-Q101 qualified. This includes stress tests such as high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), unclamped inductive switching (UIS), and electrostatic discharge (ESD) per HBM and CDM models - all performed on 100 % of production lots per Vishay's certification documentation.
What is the typical total gate charge (Qg) of SQJ140EP-T1_GE3, and how does it impact gate driver selection?
The SQJ140EP-T1_GE3 has a typical total gate charge (Qg) of 49.2 nC at VGS = 10 V, VDS = 20 V, and ID = 30 A. This value determines the peak current required from the gate driver: for a 20 ns rise time, a driver capable of ≥2.5 A peak output is recommended to avoid excessive switching losses.
Does SQJ140EP-T1_GE3 include an integrated body diode, and what are its key recovery characteristics?
Yes, SQJ140EP-T1_GE3 includes a monolithic body diode with trr = 52 ns (typ.) and Qrr = 40 nC (typ.) at IF = 10 A and di/dt = 100 A/μs. These parameters enable reliable freewheeling in hard-switched topologies and reduce need for external antiparallel diodes in many automotive power stages.
What is the thermal resistance from junction to case (RthJC) for SQJ140EP-T1_GE3, and how should it be used in thermal design?
The SQJ140EP-T1_GE3 has RthJC = 0.57 °C/W, measured from junction to the drain metal tab. This value applies when the device is mounted on a low-thermal-resistance copper plane; designers must add PCB conduction resistance (e.g., 0.3–0.8 °C/W) to estimate total junction-to-ambient resistance for safe TJ margining.
SQJ140EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 266A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3855 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 263W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ140EP-T1_GE3 FAQ
1.How can I place an order for SQJ140EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ140EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ140EP-T1_GE3 reliable?
The price and inventory of SQJ140EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ140EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ140EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ140EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ140EP-T1_GE3?
SQJ140EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ140EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ140EP-T1_GE3?
For technical support, including SQJ140EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ140EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ140EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ140EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ140EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ140EP-T1_GE3?
All SQJ140EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ140EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ140EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ140EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ140EP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
