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Vishay Siliconix SQJ142ELP-T1_GE3
- Part No.:
- SQJ142ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ142ELP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 175A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,384
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Product details
Overview
SQJ142ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 40 V VDS, 2.8 mΩ RDS(on) at VGS = 10 V, and 175 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in DC-DC converters, motor drivers, and battery management systems.
For engineers reviewing the SQJ142ELP-T1_GE3 datasheet, SQJ142ELP-T1_GE3 pinout, SQJ142ELP-T1_GE3 application, or SQJ142ELP-T1_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive (4.2 mΩ), 100% Rg and UIS testing, and PowerPAK SO-8L package thermal performance (RthJC = 0.79 °C/W).
Technical Context
This MOSFET uses trench-gate silicon technology optimized for high-current, high-temperature automotive operation. Its gate charge profile (Qg = 39–55 nC, Qgd = 7 nC) supports efficient hard-switching in synchronous buck stages, while the body diode exhibits trr = 33–50 ns and Qrr = 21–31 nC for reduced switching loss in freewheeling paths.
The device features a thermally enhanced PowerPAK SO-8L package with exposed-drain die attach and bottom-side copper thermal pad. Junction-to-case thermal resistance is specified at 0.79 °C/W, enabling high-power dissipation when mounted on PCBs with adequate copper area and thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive bus applications |
| RDS(on) @ VGS = 10 V | 2.8 mΩ - Enables <1 W conduction loss at 175 A, critical for high-efficiency power stages |
| RDS(on) @ VGS = 4.5 V | 4.2 mΩ - Supports logic-level gate drive from standard microcontrollers or gate drivers |
| ID (continuous) | 175 A @ TC = 25 °C - High-current capability for starter solenoid control or high-power LED drivers |
| TJ range | –55 °C to +175 °C - Qualified for under-hood environments including engine control units and transmission modules |
| Qg / Qgd | 39–55 nC / 7 nC - Low gate charge ratio improves switching efficiency and reduces driver stress |
| EAS | 17 mJ - Avalanche-rated for robustness against inductive load switching transients |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), thermally enhanced surface-mount package with exposed drain paddle and 8-pin layout. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (L × W × H). Bottom-side thermal pad requires solder paste stencil design per Vishay Doc. #78020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally tied to maximize current handling and thermal conduction |
| 5 | Gate (G) | Control terminal; low input capacitance (Ciss = 2150–3015 pF) enables fast turn-on with minimal driver power |
| 6 | Drain (D) | Main power output terminal; connected to exposed copper thermal pad on bottom for direct PCB heat sinking |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests per JESD47 |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® Gen IV architecture | Optimized cell pitch and trench depth deliver lowest RDS(on) × Qg figure-of-merit in its class |
| Enhanced body diode | Qrr = 21–31 nC and trr = 33–50 ns reduce reverse recovery loss in synchronous rectification |
| Thermal performance | RthJC = 0.79 °C/W enables >150 W power dissipation with proper PCB copper area and thermal vias |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and de-energization with precise pulse-width modulation. Use Value: Low RDS(on) at 4.5 V gate drive ensures full saturation even with degraded MCU rail voltage; 175 °C rating supports placement near hot engine components. |
Use Scenario: High-frequency synchronous rectification in bidirectional 48 V/12 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck-boost topology operating at 200–500 kHz. Use Value: Low Qgd/Qg ratio and fast tf (10–15 ns) minimize switching losses; avalanche rating handles transient overvoltage during phase reversal. |
| Electric Power Steering (EPS) Motor Phase Switch | Automotive Battery Disconnect Unit (BDU) |
|
Use Scenario: Half-bridge phase leg switching in brushless DC motors for electric power steering systems. IC Role / Device Role / Timing Role: High-current N-channel switch in three-phase inverter driving 30–50 A peak motor currents. Use Value: 102 A continuous current at TC = 125 °C supports sustained torque delivery; robust UIS rating withstands motor back-EMF spikes. |
Use Scenario: Main contactor replacement in high-voltage battery disconnect circuits for EV/HEV battery packs. IC Role / Device Role / Timing Role: Solid-state main power switch isolating battery pack during fault conditions or service mode. Use Value: 450 A pulsed drain current (IDM) and 18.5 A single-pulse avalanche current enable safe interruption of short-circuit faults without mechanical arcing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ @ 10 V, PowerFLAT 5x6 package, RthJC = 1.0 °C/W | Higher thermal resistance limits power density; no AEC-Q101 documentation publicly available | Prefer SQJ142ELP-T1_GE3 where AEC-Q101 compliance and lower RthJC are required for compact, high-reliability designs |
| IRL1404ZPBF | 40 V, 4.0 mΩ @ 10 V, TO-220AB package, RthJC = 1.25 °C/W, non-automotive grade | Larger footprint, higher thermal resistance, and no AEC-Q101 qualification limit use to non-safety-critical industrial applications | Choose SQJ142ELP-T1_GE3 for space-constrained automotive PCBs requiring validated reliability and superior thermal performance |
Compared with STL220N4F7AG and IRL1404ZPBF, SQJ142ELP-T1_GE3 delivers the lowest RDS(on) × RthJC product (2.2 mΩ·°C/W), highest continuous current rating at elevated case temperatures, and documented AEC-Q101 qualification-making it optimal for high-power-density automotive power stages.
Availability
SQJ142ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery protection applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQJ142ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ142ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current for SQJ142ELP-T1_GE3 at 125 °C case temperature?
The SQJ142ELP-T1_GE3 supports 102 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be verified against actual PCB thermal design using RthJA = 68 °C/W and ambient conditions. The SQJ142ELP-T1_GE3 maintains stable RDS(on) up to 175 °C junction temperature.
Is SQJ142ELP-T1_GE3 qualified to AEC-Q101, and what does that entail?
Yes, SQJ142ELP-T1_GE3 is explicitly AEC-Q101 qualified, as stated in the Features section and confirmed in Vishay Document #77549. This qualification includes stress testing for temperature cycling, humidity bias, high-temperature operating life, and unclamped inductive switching-ensuring reliability for automotive under-hood applications. The SQJ142ELP-T1_GE3 also undergoes 100% Rg and UIS screening per lot.
What is the gate threshold voltage range for SQJ142ELP-T1_GE3, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for SQJ142ELP-T1_GE3 is 1.2 V (min), 1.7 V (typ), and 2.2 V (max) at ID = 250 μA. This low threshold enables reliable turn-on with 3.3 V or 5 V logic-level drivers, but full enhancement requires ≥4.5 V to achieve the rated 4.2 mΩ RDS(on). The SQJ142ELP-T1_GE3 is not a true "logic-level" MOSFET for sub-3 V operation, though it functions well with standard automotive gate drivers.
Does SQJ142ELP-T1_GE3 include an integrated body diode, and what are its key parameters?
Yes, SQJ142ELP-T1_GE3 integrates a robust body diode with forward voltage VSD ≤ 1.1 V at IF = 15 A and VGS = 0 V. Its reverse recovery characteristics include trr = 33–50 ns, Qrr = 21–31 nC, and peak reverse recovery current IRM(REC) = 1.1–1.8 A. These values are measured under standardized conditions (IF = 10 A, di/dt = 100 A/μs) and make the SQJ142ELP-T1_GE3 suitable for synchronous rectification and freewheeling in high-frequency converters.
What is the recommended PCB land pattern for SQJ142ELP-T1_GE3, and why is it critical?
Vishay specifies the recommended land pattern for SQJ142ELP-T1_GE3 in Document #78020: a 6.73 mm × 3.96 mm thermal pad with 16 × R0.1 mm corner fillets and 4 × R0.2 mm via locations. This pattern maximizes solder joint reliability and thermal conduction from the exposed drain paddle. Deviating from this layout risks insufficient thermal transfer, voiding, or cracked solder joints-especially under thermal cycling. The SQJ142ELP-T1_GE3's RthJC = 0.79 °C/W depends directly on correct implementation of this land pattern.
SQJ142ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 175A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3015 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ142ELP-T1_GE3 FAQ
1.How can I place an order for SQJ142ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ142ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ142ELP-T1_GE3 reliable?
The price and inventory of SQJ142ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ142ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ142ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ142ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ142ELP-T1_GE3?
SQJ142ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ142ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ142ELP-T1_GE3?
For technical support, including SQJ142ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ142ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ142ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ142ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ142ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ142ELP-T1_GE3?
All SQJ142ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ142ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ142ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ142ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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