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Vishay Siliconix SQJ144EP-T1_GE3
- Part No.:
- SQJ144EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ144EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 130A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,233
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Product details
Overview
SQJ144EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, rated for 40 V VDS, 130 A continuous drain current at TC = 25 °C, and RDS(on) = 4.6 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQJ144EP-T1_GE3 datasheet, SQJ144EP-T1_GE3 pinout, SQJ144EP-T1_GE3 application, or SQJ144EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge characteristics, body diode behavior, and real-world design implications for high-current automotive switching circuits.
Technical Context
This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching. Its Qgd/Qgs ratio < 1 ensures reduced Miller effect and improved turn-off control-critical for synchronous rectification and high-frequency DC-DC stages.
Thermal design is enabled by a low RthJC of 1.0 °C/W (junction-to-case) and RthJA of 68 °C/W (junction-to-ambient on 1"² FR4 PCB), supporting high-power density layouts. The integrated body diode exhibits trr = 28.4–40 ns and Qrr = 15.8–22.2 nC, enabling efficient freewheeling in buck converters and motor H-bridges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage; suitable for 12 V/24 V automotive systems with transient margin. |
| RDS(on) @ VGS = 10 V | 4.6 mΩ - Confirmed at ID = 15 A and TJ = 25 °C; enables <1.0 W conduction loss at 15 A. |
| ID (continuous) | 130 A @ TC = 25 °C - High-current capability supports peak loads in starter solenoid drivers and battery disconnect switches. |
| Qg | 26–36 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers like UCC27531. |
| tr/tf | 4.4–6.2 ns / 5.7–8 ns - Fast switching transitions minimize overlap loss in hard-switched topologies. |
| TJ range | −55 to +175 °C - Extended temperature rating meets AEC-Q101 requirements for engine compartment placement. |
| EAS | 26.5 mJ - Single-pulse avalanche energy rating validates robustness against inductive switching stress. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced dual-side copper layout with exposed drain pad. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input; low Rg (2.0–5.6 Ω) minimizes gate ringing and simplifies driver design. |
| 5, 6 | Drain (D) | Two drain terminals connected to large exposed copper pad; primary thermal path to PCB heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test standards including HTOL, TC, UHAST, and ESD-no requalification needed for Tier 1 designs. |
| Qgd/Qgs < 1 | Reduces Miller plateau duration, enabling tighter dead-time control and lower shoot-through risk in half-bridge configurations. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-ensures field reliability. |
| Low RthJC = 1.0 °C/W | Enables >100 W power dissipation with minimal case-to-heatsink ΔT; supports compact thermal design without external heatsinks. |
| Body diode trr = 28.4 ns (typ) | Minimizes reverse recovery loss during synchronous FET commutation-critical for >300 kHz buck converter efficiency. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive 48 V DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; requires fast turn-on/off and avalanche ruggedness. Use Value: 4.6 mΩ RDS(on) reduces coil drive losses; 175 °C rating allows placement near hot ECU components; AEC-Q101 ensures compliance with ISO 26262 ASIL-B functional safety requirements. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 250–500 kHz with tight duty cycle control. Use Value: Low Qgd/Qgs ratio and 26–36 nC Qg enable clean switching edges; body diode Qrr = 15.8–22.2 nC minimizes cross-conduction loss during ZVS transitions. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Automotive Battery Disconnect Switch |
Use Scenario: Upper/lower leg switching in three-phase inverter driving brushless EPS motors with peak currents >80 A. IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge configuration; must withstand motor regeneration and load dump transients. Use Value: 238 A pulsed drain current (IDM) and 26.5 mJ EAS support safe operation during motor stall and regenerative braking events. |
Use Scenario: Solid-state replacement for mechanical relays in battery management systems, handling cold-cranking and jump-start surges. IC Role / Device Role / Timing Role: High-reliability, zero-maintenance power switch isolating starter battery from auxiliary loads. Use Value: 134 A continuous source current (IS) and −55 to +175 °C operation ensure fail-safe disconnection across all vehicle operating conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPbF | RDS(on) = 4.7 mΩ @ 10 V, but only rated to 150 °C TJ; not AEC-Q101 qualified. | Limited to non-safety-critical industrial or commercial power supplies-not approved for automotive under-hood use. | Select only if AEC-Q101 compliance is not required and thermal margin is sufficient below 150 °C. |
| STL220N4F7AG | 40 V, RDS(on) = 3.7 mΩ @ 10 V, AEC-Q101 qualified, but in PowerFLAT™ 5x6 package with higher RthJA (85 °C/W). | Better conduction loss but inferior thermal performance on standard PCBs; requires enhanced copper pour or thermal vias. | Prefer when lowest RDS(on) is critical and board-level thermal design can accommodate higher junction-to-ambient resistance. |
Compared with IRF1404ZPbF and STL220N4F7AG, SQJ144EP-T1_GE3 delivers optimal balance of AEC-Q101 qualification, 175 °C capability, 1.0 °C/W RthJC, and proven gate drive compatibility-making it the preferred choice for production automotive power stages where reliability and thermal headroom are non-negotiable.
Availability
SQJ144EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V DC-DC conversion, and electric power steering requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQJ144EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ144EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, battery management, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ144EP-T1_GE3 at 125 °C case temperature?
The SQJ144EP-T1_GE3 supports 75 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures reliable operation in high-ambient environments such as engine compartments. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJ144EP-T1_GE3 pin-compatible with other PowerPAK SO-8L N-channel MOSFETs?
SQJ144EP-T1_GE3 uses the standard PowerPAK® SO-8L footprint (PPKSO8LWLA) with pins 1–3 and 7–8 as Source, pin 4 as Gate, and pins 5–6 as Drain. It shares identical land pattern and mechanical dimensions with industry-standard SO-8L variants, enabling layout reuse-but electrical parameters (e.g., RDS(on), Qg) differ, so circuit validation is required before substitution.
Does SQJ144EP-T1_GE3 include integrated ESD protection on the gate?
Yes, SQJ144EP-T1_GE3 features built-in gate oxide protection meeting Human Body Model (HBM) ≥ 2 kV per AEC-Q101 requirements. Gate-source leakage (IGSS) is specified at ±100 nA max at ±20 V, confirming robust gate dielectric integrity. No external gate Zener is required for standard handling and PCB assembly.
What is the typical body diode forward voltage of SQJ144EP-T1_GE3 at 15 A?
The typical body diode forward voltage (VSD) of SQJ144EP-T1_GE3 is 1.1 V at IF = 15 A and VGS = 0 V, as measured per the datasheet's Source-Drain Diode Characteristics table. This value is critical for estimating freewheeling loss in asynchronous switching modes and impacts thermal design in high-duty-cycle applications.
How does the Qgd/Qgs ratio of SQJ144EP-T1_GE3 affect its switching behavior in a half-bridge?
SQJ144EP-T1_GE3 has a Qgd/Qgs ratio < 1, which shortens the Miller plateau duration during turn-off and reduces sensitivity to dv/dt-induced false triggering. In half-bridge configurations, this enables more precise dead-time control, lowers risk of shoot-through, and improves efficiency in high-frequency (>200 kHz) switching applications such as automotive DC-DC converters.
SQJ144EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1960 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 148W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ144EP-T1_GE3 FAQ
1.How can I place an order for SQJ144EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ144EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ144EP-T1_GE3 reliable?
The price and inventory of SQJ144EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ144EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ144EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ144EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ144EP-T1_GE3?
SQJ144EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ144EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ144EP-T1_GE3?
For technical support, including SQJ144EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ144EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ144EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ144EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ144EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ144EP-T1_GE3?
All SQJ144EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ144EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ144EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ144EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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