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Vishay Siliconix SQJ146ELP-T1_GE3
- Part No.:
- SQJ146ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ146ELP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 74A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,964
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Product details
Overview
SQJ146ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 40 V VDS, 88 A continuous drain current at TC = 25 °C, and RDS(on) of 5.8 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood powertrain and body control modules.
For engineers reviewing the SQJ146ELP-T1_GE3 datasheet, SQJ146ELP-T1_GE3 pinout, SQJ146ELP-T1_GE3 application, or SQJ146ELP-T1_GE3 equivalent, this device is selected for high-current DC-DC converter primary switches, 48 V battery disconnects, and automotive motor drivers where low conduction loss and robust avalanche capability are required.
Technical Context
This MOSFET uses trench-based silicon architecture optimized for low RDS(on) and fast switching with Qg = 23 nC (typ) and tf = 5–9 ns. Its gate threshold voltage (1.2–2.2 V) enables direct drive from 3.3 V and 5 V microcontrollers without level shifting.
The PowerPAK SO-8L package delivers RthJC = 1.4 °C/W and supports high-power density layouts. Integrated body diode exhibits trr = 21–42 ns and Qrr = 8–16 nC, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/48 V automotive systems with transient margin |
| RDS(on) @ VGS = 10 V | 5.8 mΩ - Enables ≤ 5 W conduction loss at 88 A, critical for thermal management in compact modules |
| ID (continuous) | 88 A @ TC = 25 °C - Supports high-current loads such as HVAC blowers and EPS assist motors |
| EAS | 16.2 mJ - Rated single-pulse avalanche energy ensures reliability during load dump or inductive switching events |
| TJ range | −55 to +175 °C - Validated operation across full automotive ambient and under-hood thermal extremes |
| Qg | 23 nC (typ) - Low gate charge reduces driver power and enables efficient 100–500 kHz switching in DC-DC converters |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTRB, H3TRB, and UIS |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced 8-lead package with exposed drain paddle on bottom side. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with Rg = 1.7–5.3 Ω - compatible with standard gate drivers and supports controlled turn-on/turn-off |
| 5, 6 | Drain (D) | Two drain terminals connected to internal copper paddle - primary thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 25 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained ECUs |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching in motor control circuits |
| Exposed drain paddle | Enables <1.4 °C/W junction-to-case thermal resistance - allows direct thermal coupling to inner-layer copper planes |
| Body diode Qrr = 8–16 nC | Reduces reverse recovery losses in half-bridge configurations, lowering EMI and improving efficiency in bidirectional converters |
| −55 to +175 °C operation | Validated performance across full automotive temperature range without derating - eliminates need for external thermal sensors |
Applications
| Automotive DC-DC Converters | 48 V Battery Disconnect Switches |
|---|---|
|
Use Scenario: High-efficiency 12 V–48 V bidirectional buck-boost converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: Primary high-side switch handling up to 80 A continuous current with 100–300 kHz PWM. Use Value: 5.8 mΩ RDS(on) minimizes conduction loss; 16.2 mJ EAS withstands inductive kickback during fault shutdown. |
Use Scenario: Solid-state contactor replacing mechanical relays in 48 V battery energy storage systems. IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlling battery isolation during charging and regenerative braking. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle life; 88 A rating supports >5 kW peak power delivery. |
| Electric Power Steering (EPS) Motor Drivers | Automotive HVAC Blower Modules |
|
Use Scenario: Three-phase inverter stage driving brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Low-side switch in each phase leg, operating with <9 ns fall time for precise torque control. Use Value: Fast switching (tf = 5–9 ns) and low Qg reduce switching losses at 20–40 kHz PWM frequencies used in noise-sensitive steering systems. |
Use Scenario: High-current PWM-controlled blower motor in premium vehicle cabin climate systems. IC Role / Device Role / Timing Role: High-side switch in linear or PWM-driven motor interface, managing up to 70 A peak load. Use Value: −55 to +175 °C operation eliminates thermal throttling in engine bay-mounted modules; 175 °C TJ rating enables smaller heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 12.3 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification | Larger footprint and higher thermal resistance (RthJC ≈ 1.5 °C/W); suitable only for non-automotive industrial use | Select when cost sensitivity outweighs automotive qualification and thermal performance requirements |
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified | Lower RDS(on) but higher Qg (45 nC); requires stronger gate driver; different pinout and land pattern | Choose for ultra-low-loss designs where gate drive capability and PCB redesign are acceptable |
Compared with IRF1404ZPBF and STL220N4F7AG, the SQJ146ELP-T1_GE3 offers balanced trade-offs: AEC-Q101 compliance, industry-leading RDS(on)/Qg ratio, and drop-in compatibility with existing PowerPAK SO-8L layouts-making it optimal for volume automotive production without requalification risk.
Availability
SQJ146ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V battery management, and electric power steering requiring stable component supply across multi-year vehicle programs.
Supply support for SQJ146ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ146ELP-T1_GE3 belongs to Vishay's TrenchFET Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 12 V and 48 V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current rating for SQJ146ELP-T1_GE3 at 125 °C case temperature?
The SQJ146ELP-T1_GE3 supports 51 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments. The SQJ146ELP-T1_GE3 maintains RDS(on) ≤ 11.5 mΩ at this condition, preserving efficiency in thermally constrained designs.
Is SQJ146ELP-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?
Yes, the SQJ146ELP-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) (5.8 mΩ @ 10 V), fast body diode recovery (trr = 21–42 ns), and low Qrr (8–16 nC). Its gate threshold (1.2–2.2 V) allows direct control by standard PWM controllers. The SQJ146ELP-T1_GE3's AEC-Q101 qualification further validates its robustness in automotive converter applications subject to voltage transients and thermal cycling.
Does SQJ146ELP-T1_GE3 require a gate resistor for safe operation in high-speed switching?
A gate resistor is recommended to control dV/dt and prevent oscillation, especially in high-di/dt applications. With Rg = 1.7–5.3 Ω (measured at 1 MHz), the SQJ146ELP-T1_GE3 benefits from an external series gate resistor (typically 2–10 Ω) to optimize turn-on/turn-off timing and reduce EMI. The SQJ146ELP-T1_GE3's low Qg (23 nC typ) ensures minimal driver power dissipation even with conservative gate resistance values.
What is the thermal resistance from junction to ambient for SQJ146ELP-T1_GE3 on a standard PCB?
The SQJ146ELP-T1_GE3 has RthJA = 42 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes standard JEDEC test conditions and serves as a baseline for thermal design. For production layouts, the SQJ146ELP-T1_GE3 achieves significantly lower effective RthJA (≤ 25 °C/W) when using internal copper planes and thermal vias beneath the exposed drain paddle.
How does the avalanche rating of SQJ146ELP-T1_GE3 compare to typical automotive system requirements?
The SQJ146ELP-T1_GE3 is rated for 18 A single-pulse avalanche current (IAS) and 16.2 mJ single-pulse avalanche energy (EAS), exceeding common automotive load-dump and inductive switching stress levels. These ratings are 100 % production-tested per datasheet, ensuring that every SQJ146ELP-T1_GE3 unit can safely absorb transient energy without failure-critical for reliability in motor drives and solenoid controls.
SQJ146ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ146ELP-T1_GE3 FAQ
1.How can I place an order for SQJ146ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ146ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ146ELP-T1_GE3 reliable?
The price and inventory of SQJ146ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ146ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ146ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ146ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ146ELP-T1_GE3?
SQJ146ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ146ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ146ELP-T1_GE3?
For technical support, including SQJ146ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ146ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ146ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ146ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ146ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ146ELP-T1_GE3?
All SQJ146ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ146ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ146ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ146ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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