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Vishay Siliconix SQJ150EP-T1_GE3
- Part No.:
- SQJ150EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ150EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 66A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
SQJ150EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 40 V VDS, 66 A continuous drain current at TC = 25 °C, and 8.4 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ150EP-T1_GE3 datasheet, SQJ150EP-T1_GE3 pinout, SQJ150EP-T1_GE3 application, or SQJ150EP-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.3 °C/W), gate charge profile (Qg = 15–20 nC), Qgd/Qgs ratio < 1, UIS-tested ruggedness, and PowerPAK SO-8L package compatibility for automotive power stage design.
Technical Context
This MOSFET uses TrenchFET® Gen IV silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its Qgd/Qgs ratio < 1 reduces Miller-induced turn-off delay and improves hard-switching robustness in synchronous buck and H-bridge topologies.
The device integrates a low-VSD body diode (1.1 V at 15 A) with trr = 25–36 ns and Qrr = 10–14 nC, enabling efficient freewheeling in bidirectional power conversion. Thermal design is supported by RthJC = 2.3 °C/W and RthJA = 68 °C/W on 1" FR4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive bus protection and switching |
| RDS(on) @ VGS = 10 V | 8.4 mΩ - Enables ≤ 10.6 W conduction loss at 66 A, critical for high-current motor drivers |
| ID (continuous) | 66 A @ TC = 25 °C - Supports high-power loads such as HVAC blowers and EPS assist motors |
| Qg | 15–20 nC - Low total gate charge enables fast switching with standard 1-A gate drivers |
| tr/tf | 17–21 ns / 13–17 ns - Fast edge rates reduce switching losses in 100–500 kHz DC-DC converters |
| TJ range | −55 to +175 °C - Full operation across engine bay ambient extremes without derating |
| AEC-Q101 qualified | Qualified per stress test requirements for automotive electronics - mandatory for OEM powertrain modules |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced 8-lead package with exposed drain paddle. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A). Optimized for high-current PCB routing and bottom-side thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source terminals - parallel connection lowers effective RDS(on) and improves current sharing |
| 5 | Gate (G) | Single gate input - low Rg (1.9–6.7 Ω) supports stable gate drive without external damping |
| 6 | Drain (D) | Exposed drain paddle - primary thermal path to PCB copper; requires soldered thermal pad for RthJC = 2.3 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables 8.4 mΩ RDS(on) at 40 V while maintaining >22 mJ single-pulse avalanche energy (EAS) |
| Qgd/Qgs ratio < 1 | Reduces Miller plateau duration, minimizing shoot-through risk in half-bridge configurations |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and unclamped inductive switching ruggedness for motor phase legs |
| Body diode trr = 25–36 ns | Minimizes reverse recovery loss and EMI in synchronous rectification and regenerative braking circuits |
| PowerPAK SO-8L thermal design | Exposed drain paddle delivers 2.3 °C/W junction-to-case resistance - 2.8× better than standard SO-8 |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-current H-bridge driver for 12 V–48 V assist motor control in steering column modules. IC Role / Device Role / Timing Role: High-side and low-side switching element handling peak currents ≥60 A during torque assist events. Use Value: 175 °C rating ensures uninterrupted operation during prolonged high-load conditions; low RDS(on) limits heat generation in confined space. |
Use Scenario: Primary-side synchronous rectifier in 12 V output stage of 48 V–12 V bidirectional DC-DC converter. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET replacing Schottky diodes to improve efficiency above 95 %. Use Value: Low Qg and fast tr/tf enable clean zero-voltage switching transitions at 300 kHz; body diode trr minimizes cross-conduction loss. |
| Engine Control Unit (ECU) Load Switching | Battery Disconnect Units (BDU) |
Use Scenario: High-side load switch for fuel pump, radiator fan, or injector drivers in engine management systems. IC Role / Device Role / Timing Role: Protected power switch with integrated overtemperature and short-circuit detection interface. Use Value: AEC-Q101 qualification and 100 % UIS testing ensure reliability during load dump transients and cranking pulses. |
Use Scenario: Isolation switch between 12 V starter battery and auxiliary systems in 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used in active battery disconnect with reverse polarity protection. Use Value: 66 A continuous rating and 168 A pulsed capability support cold-cranking surge; 175 °C operation prevents thermal shutdown during extended idling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF150P222 | RDS(on) = 9.0 mΩ @ 10 V; same PowerPAK SO-8L package; no AEC-Q101 documentation confirmed | Lacks formal AEC-Q101 qualification - suitable for non-safety-critical industrial use only | Select IRF150P222 only if AEC-Q101 compliance is not required and RDS(on) margin allows 0.6 mΩ increase. |
| STL220N4F7AG | RDS(on) = 7.5 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; lower Qg (12 nC) | Smaller footprint but higher RthJA (90 °C/W); less PCB copper area available for thermal relief | Choose STL220N4F7AG when board space is constrained and thermal management via heatsink is feasible. |
Compared with IRF150P222 and STL220N4F7AG, SQJ150EP-T1_GE3 provides the optimal balance of AEC-Q101 assurance, proven 2.3 °C/W thermal performance in PowerPAK SO-8L, and validated UIS ruggedness - making it the preferred choice for under-hood high-current switching where reliability and thermal headroom are non-negotiable.
Availability
SQJ150EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive DC-DC converters, and battery disconnect units requiring stable component supply across extended production lifecycles.
Supply support for SQJ150EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive and industrial markets.
SQJ150EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, ADAS, and electrified powertrain systems.
FAQ
What is the maximum continuous drain current rating for SQJ150EP-T1_GE3 at 125 °C case temperature?
The SQJ150EP-T1_GE3 supports 38 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be applied in thermal simulations for sustained high-temperature operation. The SQJ150EP-T1_GE3 maintains full functionality across its −55 to +175 °C junction range.
Is SQJ150EP-T1_GE3 suitable for synchronous rectification in a 48 V–12 V DC-DC converter?
Yes, SQJ150EP-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) (8.4 mΩ), fast switching (tr/tf ≤ 21/17 ns), and low Qgd/Qgs ratio < 1. Its body diode trr = 25–36 ns and Qrr = 10–14 nC minimize reverse recovery loss. The SQJ150EP-T1_GE3 has been validated in 300–500 kHz automotive DC-DC topologies requiring high efficiency and thermal stability.
Does SQJ150EP-T1_GE3 have a qualified AEC-Q101 status, and what tests does that include?
Yes, SQJ150EP-T1_GE3 is AEC-Q101 qualified per the Vishay datasheet revision S20-0229-Rev. A. This includes stress testing for HTGB, HTRB, UHAST, TC, AC/DC life test, and mechanical shock/vibration. Additionally, 100 % Rg and UIS testing are performed on every production lot - confirming robustness for automotive motor control and load switching applications using SQJ150EP-T1_GE3.
What is the thermal resistance from junction to case (RthJC) for SQJ150EP-T1_GE3, and how is it measured?
The junction-to-case thermal resistance (RthJC) of SQJ150EP-T1_GE3 is 2.3 °C/W, measured from the silicon die to the exposed drain paddle under steady-state conditions. This value assumes full solder coverage of the thermal pad on a standard 1" × 1" FR4 PCB with 2 oz copper. The SQJ150EP-T1_GE3 achieves this low RthJC via its PowerPAK SO-8L construction with direct die-to-paddle thermal path.
Can SQJ150EP-T1_GE3 replace older-generation 40 V MOSFETs like SQJ850E in existing designs?
Yes, SQJ150EP-T1_GE3 offers improved RDS(on) (8.4 mΩ vs. 10.5 mΩ for SQJ850E), lower Qg (15–20 nC vs. 24 nC), and tighter VGS(th) distribution (2.5–3.5 V). Pinout and package are identical (PowerPAK SO-8L), enabling drop-in replacement. However, layout review is recommended to verify gate drive strength and thermal pad soldering - especially for SQJ150EP-T1_GE3's higher current capability.
SQJ150EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1274 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ150EP-T1_GE3 FAQ
1.How can I place an order for SQJ150EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ150EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ150EP-T1_GE3 reliable?
The price and inventory of SQJ150EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ150EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ150EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ150EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ150EP-T1_GE3?
SQJ150EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ150EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ150EP-T1_GE3?
For technical support, including SQJ150EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ150EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ150EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ150EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ150EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ150EP-T1_GE3?
All SQJ150EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ150EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ150EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ150EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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