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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ152ELP-T1_GE3

Name: SQJ152ELP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ152ELP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ152ELP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ152ELP-T1_GE3.pdf

Description:: MOSFET N-CH 40V 123A PPAK SO-8

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Product details

Overview

SQJ152ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 40 V drain-source voltage, 123 A continuous drain current at 25 °C, and 0.0050 Ω R_DS(on) at V_GS = 10 V. It serves as a high-current power switch in 12 V/24 V automotive subsystems including motor control, DC-DC conversion, and battery protection circuits.

For engineers reviewing the SQJ152ELP-T1_GE3 datasheet, SQJ152ELP-T1_GE3 pinout, SQJ152ELP-T1_GE3 application, or SQJ152ELP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction temperature rating, low gate charge (22.5 nC typ.), and PowerPAK SO-8L package thermal performance (R_thJC = 1.1 °C/W).

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching in high-reliability automotive power stages. Its gate threshold voltage (1.2–2.2 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while the 100 % R_g and UIS testing ensures production-level ruggedness under transient stress.

The device integrates a co-packaged body diode with 1.1 V forward voltage at 15 A and 28–42 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is anchored by a low junction-to-case resistance (1.1 °C/W) and validated PCB-mount thermal resistance (42 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V automotive systems and transient surge tolerance up to ISO 7637-2 Pulse 5a.
R_DS(on) @ 10 V	0.0050 Ω - Enables ≤ 7.6 W conduction loss at 123 A, critical for high-efficiency 12 V starter relays and solenoid drivers.
I_D (continuous)	123 A @ T_C = 25 °C - Supports high-current loads without external heatsinking when mounted on 1"² FR4 PCB.
Q_g	22.5 nC (typ.) - Reduces gate drive power and switching losses in 100–500 kHz DC-DC applications.
T_J range	–55 to +175 °C - Certified for under-hood operation in engine control units and transmission control modules.
AEC-Q101	Qualified - Meets automotive stress test requirements for temperature cycling, humidity bias, and mechanical shock.
R_thJC	1.1 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for sustained high-power operation.

Pinout & Package

Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced leadless package with exposed drain paddle on bottom side. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (S)	Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with 2.5–7.4 Ω gate resistance - supports stable gate drive without external damping in PWM motor control.
5, 6	Drain (D)	Two drain terminals connected to internal copper paddle - provides low-inductance, high-current path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers 25 % lower R_DS(on) vs. prior generation at same die size - improves power density in space-constrained ECUs.
100 % R_g and UIS tested	Ensures gate robustness against ESD and avalanche energy handling (E_AS = 9.8 mJ) without derating in real-world transients.
Exposed drain paddle	Enables direct thermal interface to PCB copper - achieves 1.1 °C/W junction-to-case resistance for compact thermal design.
Body diode Q_rr	12–18 nC - Minimizes reverse recovery losses in synchronous buck topologies operating above 200 kHz.
Low C_iss/C_oss ratio	1166 pF / 412 pF - Improves hard-switching efficiency and reduces EMI in high-frequency DC-DC converters.

Applications

Engine Start-Stop System	Automotive HVAC Blower Control
Use Scenario: High-current solenoid and pre-charge switching during engine cranking and restart cycles. IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-to-starter circuit with <100 ns turn-on delay and 6.1 ns rise time. Use Value: Low R_DS(on) (0.0050 Ω) limits voltage drop to <0.6 V at 120 A, preserving cranking torque and meeting ISO 16750-2 cold-cranking requirements.	Use Scenario: PWM-controlled DC motor driver for cabin air blower in electric and hybrid vehicles. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, operating at 20–30 kHz with 25 ns fall time. Use Value: Fast switching (t_f = 8.5–12 ns) and low Q_gd (4.3 nC) minimize shoot-through risk and conduction losses across full speed range.
12 V/48 V Bi-Directional DC-DC Converter	Automotive Battery Disconnect Unit (BDU)
Use Scenario: Synchronous rectifier in high-efficiency bidirectional converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Secondary-side switch leveraging low V_SD (1.1 V) and fast trr (28–42 ns) for zero-voltage switching assist. Use Value: Body diode soft recovery and low Q_rr (12–18 nC) reduce switching losses by >30 % vs. standard MOSFETs in 48 V output stage.	Use Scenario: Isolation switch between high-voltage traction battery and 12 V auxiliary system during crash or fault events. IC Role / Device Role / Timing Role: Fail-safe power disconnect with 168 A pulsed current capability and 14 A single-pulse avalanche rating. Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure reliable operation during thermal runaway detection and forced shutdown sequences.

Engine Start-Stop System

Automotive HVAC Blower Control

Use Scenario: High-current solenoid and pre-charge switching during engine cranking and restart cycles.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-to-starter circuit with <100 ns turn-on delay and 6.1 ns rise time.

Use Value: Low R_DS(on) (0.0050 Ω) limits voltage drop to <0.6 V at 120 A, preserving cranking torque and meeting ISO 16750-2 cold-cranking requirements.

Use Scenario: PWM-controlled DC motor driver for cabin air blower in electric and hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, operating at 20–30 kHz with 25 ns fall time.

Use Value: Fast switching (t_f = 8.5–12 ns) and low Q_gd (4.3 nC) minimize shoot-through risk and conduction losses across full speed range.

12 V/48 V Bi-Directional DC-DC Converter

Automotive Battery Disconnect Unit (BDU)

Use Scenario: Synchronous rectifier in high-efficiency bidirectional converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Secondary-side switch leveraging low V_SD (1.1 V) and fast trr (28–42 ns) for zero-voltage switching assist.

Use Value: Body diode soft recovery and low Q_rr (12–18 nC) reduce switching losses by >30 % vs. standard MOSFETs in 48 V output stage.

Use Scenario: Isolation switch between high-voltage traction battery and 12 V auxiliary system during crash or fault events.

IC Role / Device Role / Timing Role: Fail-safe power disconnect with 168 A pulsed current capability and 14 A single-pulse avalanche rating.

Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure reliable operation during thermal runaway detection and forced shutdown sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1520PBF	Higher R_DS(on) (0.027 Ω @ 10 V), TO-220 package, no AEC-Q101 qualification.	Limited to non-automotive industrial motor drives; lacks thermal performance and reliability validation for under-hood use.	Select only for cost-sensitive, non-automotive designs where 175 °C operation and AEC-Q101 are not required.
STL220N4F7AG	Same V_DS (40 V), lower R_DS(on) (0.0038 Ω), PowerFLAT 5x6 package, AEC-Q101 qualified.	Better conduction loss but higher C_iss (1900 pF) and slower switching - less optimal for >300 kHz DC-DC topologies.	Prefer for ultra-low-loss battery switches; choose SQJ152ELP-T1_GE3 when switching speed and gate drive efficiency are prioritized.

Compared with IRF1520PBF and STL220N4F7AG, SQJ152ELP-T1_GE3 delivers balanced performance: superior thermal resistance (1.1 °C/W vs. ~2.5 °C/W for TO-220), faster switching than ST's PowerFLAT part, and AEC-Q101 compliance without trade-offs in gate drive simplicity or layout footprint.

Availability

SQJ152ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, motor control, and DC-DC conversion requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier 1 OEM programs.

Supply support for SQJ152ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ152ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine control, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQJ152ELP-T1_GE3 at 125 °C case temperature?

The SQJ152ELP-T1_GE3 supports 71 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package under sustained high-temperature operation, and must be verified against actual PCB layout and ambient conditions in the final design. SQJ152ELP-T1_GE3 maintains full functionality across its –55 to +175 °C junction temperature range.

Is SQJ152ELP-T1_GE3 qualified for automotive applications per AEC-Q101 standards?

Yes, SQJ152ELP-T1_GE3 is explicitly AEC-Q101 qualified, as confirmed in the Features section of the official Vishay datasheet (S23-0044-Rev. C). This qualification covers stress tests including temperature cycling, high-temperature operating life, and unclamped inductive switching - validating its suitability for under-hood and safety-critical automotive systems. SQJ152ELP-T1_GE3 also undergoes 100 % R_g and UIS screening per lot.

What is the typical total gate charge (Q_g) of SQJ152ELP-T1_GE3 and how does it impact gate driver selection?

The typical total gate charge (Q_g) of SQJ152ELP-T1_GE3 is 22.5 nC at V_GS = 10 V, V_DS = 20 V, and I_D = 15 A. This value directly determines peak gate current requirements: for a 20 ns turn-on time, a driver must supply ≥1.1 A peak. SQJ152ELP-T1_GE3's moderate Q_g enables use of compact, low-cost gate drivers such as the Texas Instruments UCC27531 or Infineon 1EDN7512B.

Does SQJ152ELP-T1_GE3 include an integrated body diode, and what are its key characteristics?

Yes, SQJ152ELP-T1_GE3 integrates a parasitic body diode with a forward voltage (V_SD) of ≤1.1 V at I_F = 15 A and V_GS = 0 V. Its reverse recovery time (t_rr) is 28–42 ns, and reverse recovery charge (Q_rr) is 12–18 nC. These parameters make SQJ152ELP-T1_GE3 suitable for synchronous rectification and freewheeling in high-frequency DC-DC converters where low recovery loss is essential.

What is the thermal resistance from junction to ambient (R_thJA) for SQJ152ELP-T1_GE3 under standard mounting conditions?

The junction-to-ambient thermal resistance (R_thJA) of SQJ152ELP-T1_GE3 is 42 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides, as defined in the Thermal Resistance Ratings table. This value assumes standard JEDEC test board conditions and serves as a baseline for thermal modeling; actual R_thJA will improve with additional copper area, thermal vias, or heatsinking. SQJ152ELP-T1_GE3's R_thJC of 1.1 °C/W further enables efficient heat extraction via the exposed drain paddle.

SQJ152ELP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 123A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1633 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ152ELP-T1_GE3 FAQ

1.How can I place an order for SQJ152ELP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ152ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ152ELP-T1_GE3 reliable?

The price and inventory of SQJ152ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ152ELP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ152ELP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ152ELP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ152ELP-T1_GE3?

SQJ152ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ152ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ152ELP-T1_GE3?

For technical support, including SQJ152ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ152ELP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ152ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ152ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ152ELP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ152ELP-T1_GE3?

All SQJ152ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ152ELP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ152ELP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ152ELP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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