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Vishay Siliconix SQJ152EP-T1_GE3
- Part No.:
- SQJ152EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ152EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SQJ152EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 40 V VDS, 5.1 mΩ RDS(on) at 10 V VGS, and 114 A continuous drain current at TC = 25 °C, designed for high-efficiency power switching in engine control units and battery management systems.
For engineers reviewing the SQJ152EP-T1_GE3 datasheet, SQJ152EP-T1_GE3 pinout, SQJ152EP-T1_GE3 application, or SQJ152EP-T1_GE3 equivalent, this device delivers AEC-Q101 qualification, 175 °C junction temperature rating, and robust UIS/100 % Rg testing - critical for under-hood automotive power stages requiring long-term reliability and thermal resilience.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low conduction loss and fast switching, with gate charge (Qg) of 18–27 nC and gate resistance (Rg) of 3.4–10.2 Ω enabling precise PWM control in DC-DC converters and motor drivers. Its body diode exhibits trr = 24–48 ns and Qrr = 12–24 nC, supporting synchronous rectification and freewheeling in bidirectional topologies.
The PowerPAK SO-8L package provides 1.1 °C/W junction-to-case thermal resistance and supports PCB-mount power dissipation up to 136 W at TC = 25 °C. Thermal transient impedance data confirm stable operation under pulsed loads up to 10 ms, validated per JEDEC JESD51-14 standards for FR4 1"×1" double-sided copper layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients. |
| RDS(on) @ 10 V | 5.1 mΩ - Enables <1.2 W conduction loss at 15 A, reducing thermal stress in compact power modules. |
| ID (continuous) | 114 A @ TC = 25 °C - Supports high-current motor phase switches and starter solenoid drivers without external heatsinking. |
| Qg | 18–27 nC - Optimized for 100–500 kHz switching in buck converters and inverters with minimal gate drive power. |
| TJ range | −55 to +175 °C - Qualified for under-hood placement in engine compartments and transmission control units. |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for vibration, temperature cycling, and HTRB, ensuring field reliability. |
| RthJC | 1.1 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for sustained high-power operation. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, 8-terminal leadless package with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source terminals tied internally; used for low-inductance return path and thermal conduction to PCB ground plane. |
| 4 | Gate (G) | Control input with ±20 V max rating; requires <10 Ω series gate resistor to damp ringing during 100+ A switching transitions. |
| 5, 6 | Drain (D) | High-current output node connected to exposed copper pad; must be soldered to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 20 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained ECUs. |
| AEC-Q101 qualification | Validated for automotive use across temperature, humidity, and mechanical shock profiles - no requalification needed for Tier 1 designs. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and avalanche energy handling up to 17.1 mJ, eliminating field failures from inductive kickback. |
| Low Qgd/Qgs ratio | Qgd = 4 nC, Qgs = 6 nC - Reduces Miller effect, enabling clean turn-off even with high dv/dt in 48 V mild-hybrid systems. |
| Body diode trr | 24–48 ns - Minimizes reverse recovery losses in synchronous rectifier applications, improving efficiency by ≥0.8 % at 200 kHz. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12 V supply and peak currents >80 A. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization with <17 ns turn-off delay and <9 ns fall time. Use Value: 5.1 mΩ RDS(on) limits I²R heating during 10 ms pulses, while 175 °C rating ensures stability near hot engine manifolds. |
Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains in start-stop systems. IC Role / Device Role / Timing Role: High-frequency (300 kHz) power switch with fast body diode recovery (24 ns trr) enabling zero-voltage switching. Use Value: Low Qrr (12–24 nC) reduces switching losses by 35 % versus standard MOSFETs, improving system efficiency from 92.1 % to 93.4 %. |
| Electric Power Steering (EPS) Motor Phase Switch | On-Board Charger (OBC) Isolation Stage |
Use Scenario: Three-phase inverter leg driving brushless motor in EPS module, operating continuously at 85 °C ambient with 66 A derated current. IC Role / Device Role / Timing Role: High-current N-channel switch with 1.1 °C/W RthJC enabling direct heatsink mounting and thermal runaway prevention. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival during motor stall events generating 189 A pulsed drain current. |
Use Scenario: Secondary-side synchronous rectifier in isolated LLC resonant converter of 6.6 kW OBC, handling 40 A RMS output current. IC Role / Device Role / Timing Role: Low-RDS(on) power switch minimizing conduction loss while maintaining <10.3 mΩ at 175 °C junction temperature. Use Value: Stable RDS(on) drift (≤2.03× at 175 °C) ensures predictable thermal performance across full vehicle operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF152PBF | Higher RDS(on) (7.5 mΩ), TO-220 package, non-AEC-Q101 qualified | Limited to non-automotive industrial motor drives; lacks under-hood thermal margin and qualification traceability | Select only for cost-sensitive non-automotive prototypes where AEC-Q101 is not mandated. |
| STL220N4F7AG | Same VDS (40 V), lower RDS(on) (3.7 mΩ), PowerFLAT 5x6 package, AEC-Q101 qualified | Better conduction loss but higher Ciss (1650 pF) increases gate drive loss above 250 kHz | Prefer for ultra-high-efficiency 12 V systems below 200 kHz; avoid in high-frequency EPS inverters due to slower switching. |
Compared with IRF152PBF and STL220N4F7AG, SQJ152EP-T1_GE3 balances low RDS(on), fast switching (Qg = 22.5 nC avg), and AEC-Q101 compliance in a thermally optimized PowerPAK SO-8L - making it optimal for production automotive power stages where reliability, layout density, and thermal headroom are jointly constrained.
Availability
SQJ152EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild-hybrid DC-DC converters requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJ152EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ152EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ152EP-T1_GE3 at 125 °C case temperature?
The SQJ152EP-T1_GE3 supports 66 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation in high-ambient environments such as engine bays. The SQJ152EP-T1_GE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling reliable use in thermally demanding automotive applications.
Is SQJ152EP-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQJ152EP-T1_GE3 is fully AEC-Q101 qualified per the Vishay datasheet revision S20-0723-Rev. A. This includes stress testing for temperature cycling, high-temperature reverse bias (HTRB), unbiased highly accelerated stress test (uHAST), and electrostatic discharge (HBM). Additionally, 100 % Rg and unclamped inductive switching (UIS) testing are performed on every production lot, confirming robustness against real-world automotive transients and gate oxide integrity.
What is the typical total gate charge (Qg) of SQJ152EP-T1_GE3, and how does it impact gate driver selection?
The SQJ152EP-T1_GE3 has a typical total gate charge (Qg) of 22.5 nC (range 18–27 nC), measured at VGS = 10 V, VDS = 20 V, and ID = 15 A. This value determines minimum gate driver peak current: for 50 ns rise time, a driver capable of ≥450 mA peak is recommended. The SQJ152EP-T1_GE3's moderate Qg enables efficient operation with common automotive gate drivers like the UCC27531 or TC4427 without excessive power loss or overshoot.
Does SQJ152EP-T1_GE3 include an integrated body diode, and what are its key recovery characteristics?
Yes, SQJ152EP-T1_GE3 features an inherent body diode with forward voltage (VSD) of ≤1.1 V at IF = 15 A and VGS = 0 V. Its reverse recovery time (trr) is 24–48 ns, and reverse recovery charge (Qrr) is 12–24 nC, measured at IF = 6 A and di/dt = 100 A/μs. These values make the SQJ152EP-T1_GE3 suitable for synchronous rectification in high-frequency DC-DC converters where low Qrr minimizes switching loss and EMI.
What is the thermal resistance from junction to case (RthJC) for SQJ152EP-T1_GE3, and how should it be used in thermal design?
The SQJ152EP-T1_GE3 has a guaranteed maximum junction-to-case thermal resistance (RthJC) of 1.1 °C/W, measured from the silicon die to the exposed drain pad. In thermal design, this value is used with the actual power dissipation (PD) to calculate minimum allowable case-to-heatsink thermal resistance: RthCS ≤ (TJ(max) − TS) / PD − 1.1. For example, at 100 W dissipation and TJ = 175 °C, the heatsink must maintain TS ≤ 65 °C to stay within limits - confirming the SQJ152EP-T1_GE3's suitability for high-power automotive modules.
SQJ152EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ152EP-T1_GE3 FAQ
1.How can I place an order for SQJ152EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ152EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ152EP-T1_GE3 reliable?
The price and inventory of SQJ152EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ152EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ152EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ152EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ152EP-T1_GE3?
SQJ152EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ152EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ152EP-T1_GE3?
For technical support, including SQJ152EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ152EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ152EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ152EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ152EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ152EP-T1_GE3?
All SQJ152EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ152EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ152EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ152EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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