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Vishay Siliconix SQJ154EP-T1_GE3
- Part No.:
- SQJ154EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ154EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:3,098
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Product details
Overview
SQJ154EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 40 V drain-source voltage, 243 A continuous drain current at TC = 25 °C, and 2.5–3.5 V gate threshold voltage. It features 2.5 mΩ RDS(on) at VGS = 10 V and ID = 15 A, operates up to +175 °C junction temperature, and is qualified to AEC-Q101 for under-hood powertrain and body control modules.
For engineers reviewing the SQJ154EP-T1_GE3 datasheet, SQJ154EP-T1_GE3 pinout, SQJ154EP-T1_GE3 application, or SQJ154EP-T1_GE3 equivalent, this device is selected for high-current DC-DC converter primary switches, 48 V battery disconnects, and high-efficiency motor drive half-bridges where low conduction loss, robust avalanche capability (54 mJ EAS), and automotive reliability are mandatory.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low RDS(on) and fast switching with 43 nC total gate charge and 13 ns turn-on delay. Its PowerPAK® SO-8L package delivers 0.7 °C/W junction-to-case thermal resistance, enabling high-power operation without external heatsinking when mounted on 1"² FR4 PCB.
The device integrates a robust body diode with 36–72 ns reverse recovery time and 25–50 nC Qrr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate-source leakage remains below ±100 nA at ±20 V, ensuring stable bias in high-impedance gate-drive circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 48 V automotive systems with transient margin |
| RDS(on) | 2.5 mΩ @ VGS = 10 V, ID = 15 A - Enables <1 W conduction loss at 200 A in high-current paths |
| ID (cont) | 243 A @ TC = 25 °C - Supports peak load currents in starter-alternator and traction inverter auxiliary stages |
| EAS | 54 mJ - Withstands single-pulse inductive energy without failure in relay replacement or solenoid drive |
| TJ range | −55 to +175 °C - Validated for engine bay mounting in ADAS camera modules and transmission control units |
| Qg | 43 nC (typ) - Matches standard 12 V gate drivers with <1 μs switching transition at 1 A drive strength |
| RthJC | 0.7 °C/W - Allows direct thermal coupling to copper pour or heatsink for >150 W continuous dissipation |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, lead (Pb)-free and halogen-free, 6.15 mm × 4.90 mm footprint with exposed drain paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce source inductance and improve current sharing in paralleled configurations |
| 4 | Gate (G) | Single gate input with 3.7–5.7 Ω internal gate resistance - limits dV/dt-induced shoot-through during fast switching |
| 5, 6 | Drain (D) | Two drain terminals connected to large exposed copper paddle - primary thermal and current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - no derating needed for Tier-1 production |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor commutation |
| TrenchFET® Gen IV architecture | Optimized cell pitch and trench depth yield 15 % lower RDS(on) vs. prior generation at same die size - improves power density in space-constrained ECUs |
| Body diode trr < 72 ns | Enables efficient freewheeling in 100 kHz+ buck converters without external Schottky - reduces BOM count and layout area |
| Exposed drain paddle | Thermal interface directly to PCB copper - achieves 0.7 °C/W RthJC without solder paste voiding concerns typical of D2PAK packages |
Applications
| Automotive DC-DC Converter | 48 V Battery Disconnect Switch |
|---|---|
Use Scenario: High-efficiency 12 V/48 V bidirectional converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200–300 kHz with 100 A peak current. Use Value: 2.5 mΩ RDS(on) minimizes conduction loss across full load range, while 175 °C rating supports compact heatsinkless design near engine compartment. |
Use Scenario: Isolation of 48 V battery during crash or service events in electric power steering and brake-by-wire systems. IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlled by safety MCU with diagnostic feedback. Use Value: 54 mJ EAS withstands inductive kickback from solenoid loads; AEC-Q101 qualification ensures functional safety compliance per ISO 26262 ASIL-B. |
| Electric Power Steering Motor Driver | Onboard Charger AC-DC Stage |
Use Scenario: Half-bridge leg in 3-phase EPS motor inverter handling 150 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch with fast 5 ns fall time and low Qgd for precise PWM timing control. Use Value: 43 nC Qg enables clean gate drive with standard isolated gate driver ICs; 0.7 °C/W RthJC maintains TJ < 150 °C at full load. |
Use Scenario: PFC boost switch in 6.6 kW OBC front-end operating at 65 kHz with 30 A RMS current. IC Role / Device Role / Timing Role: High-current, high-voltage switching element requiring low Coss and stable RDS(on) over temperature. Use Value: 830–1162 pF Coss minimizes switching loss at high frequency; RDS(on) drift ≤ 1.8× from 25 °C to 175 °C ensures predictable thermal performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PBF | RDS(on) = 5.3 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification | Limited to industrial/non-automotive due to lack of automotive qualification and higher RDS(on) | Select only for cost-sensitive non-automotive 40 V systems where thermal budget allows higher conduction loss |
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; 100 V rating | Higher voltage rating increases cost and gate charge (65 nC); larger package footprint than PowerPAK® SO-8L | Prefer when system requires 100 V blocking or when board space permits larger 5x6 mm footprint and higher gate drive capability is available |
Compared with IRF1405PBF and STL220N4F7AG, SQJ154EP-T1_GE3 offers optimal balance of ultra-low RDS(on), compact PowerPAK® SO-8L footprint, and full AEC-Q101 compliance - making it the preferred choice for space-constrained, thermally demanding automotive power stages where 40 V rating is sufficient.
Availability
SQJ154EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V battery management, and high-current motor drive applications requiring stable component supply and long-term lifecycle support.
Supply support for SQJ154EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ154EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, ADAS, and electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ154EP-T1_GE3 at 125 °C case temperature?
The SQJ154EP-T1_GE3 supports 140 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK® SO-8L package under sustained high-temperature operation and must be used in thermal design calculations alongside RthJC = 0.7 °C/W to ensure junction temperature remains within −55 to +175 °C limits.
Is SQJ154EP-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V buck converter?
Yes, SQJ154EP-T1_GE3 is well-suited for synchronous rectification in 48 V to 12 V buck converters. Its 2.5 mΩ RDS(on) minimizes conduction loss at high output currents, and its body diode exhibits 36–72 ns trr and 25–50 nC Qrr - enabling efficient freewheeling with low reverse recovery loss. The device's 175 °C rating also accommodates elevated temperatures common in compact converter designs.
Does SQJ154EP-T1_GE3 require external gate resistors for stable operation in high-speed switching circuits?
SQJ154EP-T1_GE3 has an internal gate resistance of 3.7–5.7 Ω, which helps dampen ringing and limit dV/dt-induced shoot-through. While not strictly required, a small external series gate resistor (typically 2–10 Ω) is recommended to fine-tune switching speed, suppress oscillation in high-di/dt layouts, and ensure compatibility with gate driver output current limits - especially in half-bridge configurations where cross-conduction risk exists.
How is the PowerPAK® SO-8L package of SQJ154EP-T1_GE3 thermally connected to the PCB?
The PowerPAK® SO-8L package of SQJ154EP-T1_GE3 uses an exposed drain paddle that must be soldered directly to a large copper thermal pad on the PCB. Vishay recommends a land pattern per document 78020, with multiple thermal vias connecting the pad to inner-layer or backside ground planes. This configuration achieves the specified 0.7 °C/W junction-to-case thermal resistance and is essential to sustain 243 A continuous current at TC = 25 °C.
What does "100 % Rg and UIS tested" mean for SQJ154EP-T1_GE3?
"100 % Rg and UIS tested" means every SQJ154EP-T1_GE3 unit undergoes production screening for gate resistance (Rg) tolerance and unclamped inductive switching (UIS) energy capability. Rg testing ensures consistent gate drive timing and dV/dt immunity, while UIS testing verifies each device can safely absorb 54 mJ of inductive energy without failure - critical for reliability in motor drive and solenoid control applications where voltage spikes occur.
SQJ154EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 243A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 214W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ154EP-T1_GE3 FAQ
1.How can I place an order for SQJ154EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ154EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ154EP-T1_GE3 reliable?
The price and inventory of SQJ154EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ154EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ154EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ154EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ154EP-T1_GE3?
SQJ154EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ154EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ154EP-T1_GE3?
For technical support, including SQJ154EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ154EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ154EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ154EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ154EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ154EP-T1_GE3?
All SQJ154EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ154EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ154EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ154EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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