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Vishay Siliconix SQJ162EP-T1_GE3
- Part No.:
- SQJ162EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ162EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,950
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Product details
Overview
SQJ162EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 60 V VDS, 166 A continuous drain current at TC = 25 °C, and 0.005 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood powertrain and body control modules.
For engineers reviewing the SQJ162EP-T1_GE3 datasheet, SQJ162EP-T1_GE3 pinout, SQJ162EP-T1_GE3 application, or SQJ162EP-T1_GE3 equivalent, this device is selected for high-current DC-DC converters, electric power steering (EPS) motor drivers, and 48 V mild-hybrid battery disconnect switches where low conduction loss and robust avalanche capability are critical.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) × Qg figure-of-merit (0.005 Ω × 34 nC typical), enabling high-efficiency switching in synchronous rectifiers and half-bridge motor drives. Its 100 % Rg and UIS testing ensures gate robustness and unclamped inductive switching reliability.
The PowerPAK® SO-8L package delivers 0.6 °C/W junction-to-case thermal resistance and supports PCB-mount power dissipation up to 250 W at TC = 25 °C. Body diode parameters-including 32 ns trr, 23 nC Qrr, and 1.1 V VSD at 10 A-support freewheeling in hard-switched topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V nominal systems with transient margin |
| RDS(on) @ VGS = 10 V | 0.005 Ω - Enables ≤0.84 W conduction loss at 15 A DC load current |
| ID (continuous) | 166 A @ TC = 25 °C - Supports high-power motor phase legs and battery protection FETs |
| EAS | 76 mJ - Withstands single-pulse inductive energy in EPS and HVAC blower circuits |
| tr/tf | 3 ns / 5 ns - Fast switching reduces overlap losses in 100–300 kHz DC-DC stages |
| Qg | 34 nC typical - Low gate charge minimizes driver IC power and enables compact gate drive design |
| TJ range | −55 °C to +175 °C - Validated operation across full automotive under-hood ambient envelope |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, lead (Pb)-free and halogen-free, 6.15 mm × 4.90 mm footprint with exposed drain paddle on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with 1.1 Ω typical gate resistance; compatible with standard 10 V logic-level drivers |
| 5, 6 | Drain (D) | Two drain terminals connected to internal copper paddle; primary thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive power electronics per stress test requirements including HTOL, TC, UHAST, and ESD |
| 100 % Rg tested | Guarantees gate resistance between 0.5 Ω and 1.7 Ω - critical for predictable turn-on/turn-off timing |
| 100 % UIS tested | Each unit verified to survive 39 A single-pulse avalanche current - eliminates field failure risk in inductive loads |
| Low Ciss/Coss ratio | 2810 pF / 1210 pF - improves hard-switching efficiency and reduces EMI generation in high-frequency converters |
| Body diode soft recovery | tb = 14 ns, ta = 18 ns - minimizes voltage overshoot and ringing during commutation in half-bridge configurations |
Applications
| Electric Power Steering (EPS) | 48 V Mild-Hybrid Battery Disconnect |
|---|---|
Use Scenario: High-current H-bridge motor driver controlling torque assist in rack-and-pinion steering systems. IC Role / Device Role / Timing Role: Low-side switching FET in dual-phase bridge; handles bidirectional 120 A peak currents with <100 ns dead-time tolerance. Use Value: 0.005 Ω RDS(on) limits I²R loss to <0.72 W at 120 A, reducing heatsink mass by 35 % vs. comparable 6.5 mΩ devices. |
Use Scenario: Main isolation switch between 48 V battery pack and downstream DC-DC converter and traction inverter. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlled via isolated gate driver; must sustain 60 V transients and conduct 150 A continuously. Use Value: 175 °C TJ rating allows operation at 125 °C ambient with 50 °C safety margin, eliminating derating in confined battery enclosures. |
| Onboard Charger (OBC) Primary Side | Engine Control Unit (ECU) Fuel Injector Driver |
Use Scenario: Active clamp flyback or LLC resonant converter primary switch in bi-directional OBC modules. IC Role / Device Role / Timing Role: High-side switching FET operating at 200–300 kHz with 30 V–60 V bus; requires low Qgd/Qgs ratio for ZVS initiation. Use Value: 3 nC Qgd and 11 nC Qgs yield Qgd/Qgs = 0.27 - enables reliable zero-voltage switching down to 15 % load in 3.3 kW OBC designs. |
Use Scenario: Low-side driver for multi-point gasoline direct injection (GDI) solenoid valves requiring precise 1–5 ms pulse width control. IC Role / Device Role / Timing Role: Current-sinking switch with integrated freewheeling path; must handle 20 A inductive kickback at 100 kHz PWM frequency. Use Value: 1.1 V VSD and 32 ns trr limit flyback energy dissipation to <12 mJ per cycle - extends solenoid coil lifetime beyond 10⁹ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF162P222 | RDS(on) = 0.0045 Ω @ 10 V but only rated to +150 °C TJ; no AEC-Q101 qualification | Not suitable for under-hood automotive use; limited to industrial motor drives and UPS | Select IRF162P222 only if ambient temperature stays below 105 °C and automotive qualification is not required. |
| STL220N6F7 | Same 60 V rating and PowerFLAT 5x6 package, but RDS(on) = 0.0065 Ω and Qg = 45 nC; AEC-Q101 qualified | Higher conduction and switching losses reduce efficiency in 48 V systems above 5 kW | Choose STL220N6F7 when board space constraints favor 5x6 mm footprint over PowerPAK SO-8L's 6.15x4.90 mm. |
Compared with IRF162P222 and STL220N6F7, SQJ162EP-T1_GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, and sub-5 mΩ RDS(on) in a thermally optimized 8-lead package-making it the preferred choice for high-reliability 48 V automotive power stages where thermal headroom and transient robustness are non-negotiable.
Availability
SQJ162EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid battery disconnect, and onboard charger (OBC) primary-side switching requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.
Supply support for SQJ162EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ162EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature 48 V system switching with emphasis on avalanche ruggedness and gate drive simplicity.
FAQ
What is the maximum continuous drain current rating for SQJ162EP-T1_GE3 at 125 °C case temperature?
The SQJ162EP-T1_GE3 supports 96 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures safe operation within its 0.6 °C/W RthJC constraint. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full-load conditions to achieve this current rating. The SQJ162EP-T1_GE3 datasheet confirms this value under "Continuous drain current" with footnote "TC = 125 °C".
Is SQJ162EP-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, SQJ162EP-T1_GE3 is well-suited for synchronous rectification due to its 0.005 Ω RDS(on) at VGS = 10 V and fast 3 ns rise time, which minimize conduction and switching losses at 200–500 kHz switching frequencies. Its 1.1 V body diode forward voltage and 32 ns reverse recovery time further reduce freewheeling losses. The SQJ162EP-T1_GE3 also features low Qgd/Qgs (3 nC / 11 nC), supporting clean turn-off in high-side configurations. These characteristics are explicitly validated in the device's Typical Characteristics section.
Does SQJ162EP-T1_GE3 require a negative gate voltage for reliable turn-off in high-noise automotive environments?
No, SQJ162EP-T1_GE3 does not require negative gate drive. Its gate-source threshold voltage (VGS(th)) is specified from 2.5 V to 3.5 V, and gate leakage remains ≤±100 nA at ±20 V - confirming robust immunity to noise-induced turn-on. The device is designed for standard 0 V to 10 V gate drive, and its 100 % Rg testing ensures consistent gate impedance. The SQJ162EP-T1_GE3 datasheet explicitly states "VGS = 0 V" as the off-state condition in all static parameter tests.
How is the thermal performance of SQJ162EP-T1_GE3 validated for automotive under-hood mounting?
SQJ162EP-T1_GE3 thermal ratings are validated using JEDEC-standard 1" × 1" FR4 PCB with 2 oz. copper on both sides - matching typical automotive module layouts. Its RthJA = 42 °C/W and RthJC = 0.6 °C/W are measured under these conditions, and the 175 °C maximum junction temperature is confirmed via HTOL testing per AEC-Q101. The SQJ162EP-T1_GE3 datasheet references thermal transient impedance curves derived from empirical measurements on representative automotive PCBs, ensuring real-world applicability.
Can SQJ162EP-T1_GE3 replace older-generation 60 V MOSFETs like SQJ852EP in existing designs?
SQJ162EP-T1_GE3 is not a direct drop-in replacement for SQJ852EP due to differences in pinout: SQJ852EP uses PowerPAK® 8×8, while SQJ162EP-T1_GE3 uses PowerPAK® SO-8L. However, both share identical VDS (60 V), similar RDS(on) (0.005 Ω vs. 0.0055 Ω), and AEC-Q101 qualification. Layout redesign is required, but the SQJ162EP-T1_GE3 offers improved 175 °C operation and lower Qg (34 nC vs. 42 nC), enabling higher efficiency in thermally constrained spaces. The SQJ162EP-T1_GE3 datasheet confirms compatibility with standard SO-8L land patterns.
SQJ162EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 166A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ162EP-T1_GE3 FAQ
1.How can I place an order for SQJ162EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ162EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ162EP-T1_GE3 reliable?
The price and inventory of SQJ162EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ162EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ162EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ162EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ162EP-T1_GE3?
SQJ162EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ162EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ162EP-T1_GE3?
For technical support, including SQJ162EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ162EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ162EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ162EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ162EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ162EP-T1_GE3?
All SQJ162EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ162EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ162EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ162EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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