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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ168ELP-T1_GE3

Name: SQJ168ELP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ168ELP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ168ELP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ168ELP-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Product details

Overview

SQJ168ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 24 A continuous drain current at 25 °C, and 0.036 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQJ168ELP-T1_GE3 datasheet, SQJ168ELP-T1_GE3 pinout, SQJ168ELP-T1_GE3 application, or SQJ168ELP-T1_GE3 equivalent, this device delivers validated avalanche robustness (E_AS = 14.4 mJ), 100 % R_g and UIS tested reliability, and low gate charge (Q_g = 13–20 nC) for efficient PWM switching in automotive power stages.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 2.8 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking when mounted on FR4 PCBs.

The device features a robust body diode with t_rr = 19–38 ns and Q_rr = 17–34 nC, supporting synchronous rectification and flyback recovery in bidirectional power converters. Gate threshold voltage is tightly distributed (1.5–2.5 V), ensuring stable turn-on across temperature and supply variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive architectures and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	0.036 Ω - Enables ≤ 21 W conduction loss at 24 A, reducing thermal stress in compact power modules.
I_D (continuous, T_C = 25 °C)	24 A - Supports high-current loads such as HVAC blowers and EPS assist motors without derating.
Q_g (total gate charge)	13–20 nC - Low drive energy requirement allows use with standard gate drivers (e.g., TC4427) at ≥100 kHz switching.
T_J max	+175 °C - Qualified for engine bay placement per AEC-Q101, eliminating need for remote mounting or forced cooling.
E_AS	14.4 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients.
R_thJC	2.8 °C/W - Enables direct thermal coupling to heatsink or copper pour, supporting >20 W dissipation with modest thermal interface.

Pinout & Package

Package: PowerPAK® SO-8L (PPKSO8LWLA), 6.15 mm × 4.90 mm footprint, exposed-drain thermal pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with R_g = 2.1–6.3 Ω - supports controlled turn-on/turn-off and minimizes ringing.
6, 7, 8	Drain (D)	Three drain terminals connected to exposed thermal pad - primary heat path to PCB and mechanical mounting surface.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature cycling, humidity, and mechanical shock - eliminates qualification overhead for Tier 1 suppliers.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor drives.
TrenchFET® architecture	Optimized cell layout achieves 0.036 Ω R_DS(on) in SO-8L - outperforms planar MOSFETs by >25 % in on-resistance per mm².
Exposed drain thermal pad	Low R_thJC of 2.8 °C/W - enables >90 % of heat to exit through PCB, reducing system-level thermal bottlenecks.
Body diode t_rr = 19–38 ns	Fast reverse recovery supports synchronous rectification in buck converters - reduces diode conduction loss and EMI.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side N-channel switch controlling 12 V injector coil with 1–2 ms pulse width and 10 A peak current. Use Value: Low R_DS(on) and fast t_f = 1–2 ns minimize switching loss and thermal rise during repetitive pulsing at 100 Hz.	Use Scenario: Primary-side high-side switch in 48 V–12 V bi-directional buck-boost converter for regenerative braking. IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch operating at 200 kHz with 30 A peak current. Use Value: Q_gd = 2 nC and C_iss = 705–987 pF enable clean zero-voltage switching transitions and reduced gate drive losses.
Electric Power Steering (EPS) Motor Phase Leg	Automotive Battery Disconnect Switch
Use Scenario: Half-bridge upper switch in three-phase inverter driving 24 V brushed DC assist motor. IC Role / Device Role / Timing Role: High-side switching element handling 20 A RMS current with PWM duty cycle up to 95 %. Use Value: +175 °C T_J rating and R_thJA = 42 °C/W allow operation in sealed EPS housing without active cooling.	Use Scenario: Main isolation switch between 12 V starter battery and vehicle load network during key-off state. IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 μA at 60 V) high-reliability disconnect switch with fail-safe open-circuit behavior. Use Value: I_DSS ≤ 250 μA at +175 °C ensures <100 μA leakage over full life, preventing parasitic battery drain in parked vehicles.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling 12 V injector coil with 1–2 ms pulse width and 10 A peak current.

Use Value: Low R_DS(on) and fast t_f = 1–2 ns minimize switching loss and thermal rise during repetitive pulsing at 100 Hz.

Use Scenario: Primary-side high-side switch in 48 V–12 V bi-directional buck-boost converter for regenerative braking.

IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch operating at 200 kHz with 30 A peak current.

Use Value: Q_gd = 2 nC and C_iss = 705–987 pF enable clean zero-voltage switching transitions and reduced gate drive losses.

Electric Power Steering (EPS) Motor Phase Leg

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge upper switch in three-phase inverter driving 24 V brushed DC assist motor.

IC Role / Device Role / Timing Role: High-side switching element handling 20 A RMS current with PWM duty cycle up to 95 %.

Use Value: +175 °C T_J rating and R_thJA = 42 °C/W allow operation in sealed EPS housing without active cooling.

Use Scenario: Main isolation switch between 12 V starter battery and vehicle load network during key-off state.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 μA at 60 V) high-reliability disconnect switch with fail-safe open-circuit behavior.

Use Value: I_DSS ≤ 250 μA at +175 °C ensures <100 μA leakage over full life, preventing parasitic battery drain in parked vehicles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(on) = 0.022 Ω @ 10 V (lower), but Q_g = 32 nC (higher); PowerFLAT 5x6 package, no exposed drain pad.	Better conduction efficiency but higher gate drive loss; requires external heatsink due to higher R_thJA.	Prefer when conduction loss dominates and board space permits larger gate driver; avoid in thermally constrained layouts.
IRF7470PBF	R_DS(on) = 0.042 Ω @ 10 V (higher), Q_g = 15 nC (similar); TO-252 package, lower thermal performance (R_thJC = 3.5 °C/W).	Higher conduction loss and limited to +175 °C only with derating; not AEC-Q101 qualified.	Acceptable for non-automotive industrial use where qualification is not required and thermal margin exists.

Compared with STL220N6F7AG and IRF7470PBF, SQJ168ELP-T1_GE3 offers balanced trade-offs: lower Q_g than STL220N6F7AG for faster switching, better thermal resistance than IRF7470PBF for passive cooling, and full AEC-Q101 compliance for production automotive deployment.

Availability

SQJ168ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year vehicle programs.

Supply support for SQJ168ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal conditioning components.

The SQJ168ELP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-efficiency, high-temperature switching in engine control, ADAS, and electrified powertrain subsystems.

FAQ

What is the maximum continuous drain current rating for SQJ168ELP-T1_GE3 at 125 °C case temperature?

The SQJ168ELP-T1_GE3 supports 14 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in under-hood environments where ambient temperatures exceed 85 °C. The SQJ168ELP-T1_GE3 maintains R_DS(on) stability up to +175 °C junction temperature.

Is SQJ168ELP-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes, SQJ168ELP-T1_GE3 is well-suited for synchronous rectification due to its fast body diode reverse recovery time (t_rr = 19–38 ns) and low Q_rr (17–34 nC), which minimize switching loss and voltage overshoot during commutation. Its low R_DS(on) and 100 % UIS testing ensure robustness against inductive kickback in high-frequency (≥100 kHz) buck converters. The SQJ168ELP-T1_GE3 has been validated in 48 V–12 V bi-directional topologies.

Does SQJ168ELP-T1_GE3 require a gate resistor for safe operation in automotive PWM applications?

A gate resistor is recommended for SQJ168ELP-T1_GE3 to control dV/dt and prevent oscillation, especially in high-di/dt motor drive circuits. With typical R_g = 4.2 Ω and low C_iss/C_rss ratio, a 5–10 Ω series resistor provides optimal trade-off between switching speed and EMI suppression. The SQJ168ELP-T1_GE3 gate drive requirements are compatible with industry-standard drivers like the UCC27531 and TC4427 without additional level-shifting.

What is the thermal resistance from junction to ambient (R_thJA) for SQJ168ELP-T1_GE3 on a standard FR4 PCB?

The SQJ168ELP-T1_GE3 exhibits R_thJA = 42 °C/W when mounted on a 1" square FR4 PCB, per the manufacturer's test condition. This value assumes standard 2 oz copper and no additional heatsinking. For improved thermal performance, the exposed drain pad must be soldered to a large copper pour or internal ground plane - the SQJ168ELP-T1_GE3's R_thJC of 2.8 °C/W enables >70 % of heat to transfer directly to the PCB.

How does the AEC-Q101 qualification of SQJ168ELP-T1_GE3 impact its use in non-automotive industrial applications?

The AEC-Q101 qualification of SQJ168ELP-T1_GE3 confirms enhanced reliability under temperature cycling, mechanical shock, and humidity stress - benefits that extend to demanding industrial applications such as solar inverters and UPS systems. While not required outside automotive, this qualification provides design margin for long-life deployments. The SQJ168ELP-T1_GE3 retains full parametric performance in industrial temperature ranges (−55 °C to +175 °C).

SQJ168ELP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 987 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 29.4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ168ELP-T1_GE3 FAQ

1.How can I place an order for SQJ168ELP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ168ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ168ELP-T1_GE3 reliable?

The price and inventory of SQJ168ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ168ELP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ168ELP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ168ELP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ168ELP-T1_GE3?

SQJ168ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ168ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ168ELP-T1_GE3?

For technical support, including SQJ168ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ168ELP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ168ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ168ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ168ELP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ168ELP-T1_GE3?

All SQJ168ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ168ELP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ168ELP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ168ELP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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