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Vishay Siliconix SQJ180EP-T1_GE3
- Part No.:
- SQJ180EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ180EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:4,480
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Product details
Overview
SQJ180EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 80 V drain-source voltage, 248 A continuous drain current at TC = 25 °C, and 0.0030 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter primary switches, and high-current battery disconnect applications.
For engineers reviewing the SQJ180EP-T1_GE3 datasheet, SQJ180EP-T1_GE3 pinout, SQJ180EP-T1_GE3 application, or SQJ180EP-T1_GE3 equivalent, key selection criteria include its 0.3 °C/W junction-to-case thermal resistance, Qgd/Qgs ratio < 1 for optimized switching, 100 % Rg and UIS testing, and PowerPAK SO-8L package compatibility with high-power automotive PCB layouts.
Technical Context
This MOSFET uses trench-gate silicon technology with a low gate charge profile: total gate charge is 78–117 nC at VGS = 10 V, VDS = 40 V, ID = 10 A, and Qgd is only 16 nC - enabling fast, low-loss switching in hard-switched topologies. Its dynamic parameters include Ciss = 4746–6645 pF and Crss = 51–72 pF at VDS = 25 V, supporting efficient gate drive design.
The device integrates a robust body diode with trr = 50–65 ns, Qrr = 71–95 nC, and VSD = 1.1 V at IF = 15 A, VGS = 0 V - suitable for synchronous rectification and freewheeling in bidirectional power stages. Absolute maximum ratings include 420 A pulsed drain current and 88 mJ single-pulse avalanche energy, confirming ruggedness in transient overload conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V and 60 V nominal automotive bus systems with margin for load dump transients. |
| RDS(on) | 0.0030 Ω at VGS = 10 V, ID = 15 A - enables <1 W conduction loss at 18 A, critical for thermally constrained modules. |
| ID (continuous) | 248 A at TC = 25 °C - delivers high current density in compact PowerPAK SO-8L footprint without external heatsink. |
| TJ range | −55 °C to +175 °C - certified for engine bay placement and sustained operation in hot-climate vehicle environments. |
| RthJC | 0.3 °C/W - allows direct thermal coupling to copper planes or heatsinks, enabling >400 W power dissipation with minimal ΔT. |
| Qgd/Qgs | < 1 - reduces Miller-induced switching oscillation and improves EMI behavior in high-dV/dt applications. |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics including HTGB, HTRB, and UHAST. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, 8-terminal leadless package with exposed drain pad on bottom side for thermal and electrical connection. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Internally connected to large copper die attach area; must be soldered to PCB thermal pad for RthJC = 0.3 °C/W performance. |
| 4 | Gate (G) | High-impedance control input; requires low-inductance gate driver trace due to 78–117 nC total gate charge. |
| 5, 6 | Source (S) | Power return path and gate reference; dual terminals reduce source inductance for stable switching waveforms. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers lowest RDS(on) × Qg figure-of-merit in 80 V SO-8L class, reducing combined conduction and switching losses. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<1.5 Ω) and unclamped inductive switching robustness across full production lot. |
| Optimized Qgd/Qgs ratio < 1 | Minimizes Miller plateau duration and dv/dt-induced false turn-on in high-side configurations. |
| Exposed drain thermal pad | Enables direct thermal path to PCB ground plane, achieving 0.3 °C/W RthJC without mechanical heatsink. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, mechanical shock, and humidity bias life testing. |
Applications
| Electric Power Steering (EPS) Motor Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current half-bridge switch controlling brushed or BLDC assist motor in steering column module. IC Role / Device Role / Timing Role: Low-side or high-side power switch handling peak currents >200 A during torque assist events. Use Value: 175 °C rating and 248 A continuous current enable compact, fanless EPS controller design meeting ASIL-B functional safety constraints. |
Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with hard-switched PWM control. Use Value: 0.0030 Ω RDS(on) and 0.3 °C/W RthJC minimize conduction loss and thermal derating, sustaining >96 % efficiency at 5 kW output. |
| Automotive Battery Disconnect Unit (BDU) | Onboard Charger (OBC) Input Stage |
|
Use Scenario: Solid-state replacement for mechanical contactor in high-voltage battery isolation circuits. IC Role / Device Role / Timing Role: Single-pole, high-current DC switch with controlled turn-on/turn-off for fault protection. Use Value: 420 A pulsed current rating and 88 mJ avalanche energy allow safe interruption of short-circuit faults without destructive failure. |
Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC front-end stage operating at 65 kHz. IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) MOSFET in continuous conduction mode (CCM) PFC topology. Use Value: Low Crss (51–72 pF) and Qgd (16 nC) reduce switching losses and improve power factor correction linearity under varying grid conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PBF | RDS(on) = 0.0072 Ω @ 10 V (2.4× higher); TO-220 package; no AEC-Q101 qualification. | Limited to industrial/non-automotive use; requires heatsink due to higher RDS(on) and RthJA = 40 °C/W. | Select when cost sensitivity outweighs thermal performance and automotive compliance requirements. |
| STL220N8F7AG | RDS(on) = 0.0022 Ω @ 10 V (27 % lower); PowerFLAT 8x8 package; AEC-Q101 qualified; 150 °C TJ max. | Better conduction loss but lower temperature capability; larger footprint (8 mm × 8 mm vs. 6.15 mm × 4.90 mm). | Prefer for ultra-low-loss designs where board space permits and 175 °C operation is not required. |
Compared with IRF1407PBF and STL220N8F7AG, the SQJ180EP-T1_GE3 uniquely balances ultra-low RDS(on), industry-leading 175 °C operation, AEC-Q101 compliance, and compact PowerPAK SO-8L packaging - making it optimal for space-constrained, high-temperature automotive power stages where reliability and thermal headroom are critical.
Availability
SQJ180EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and automotive battery disconnect units requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQJ180EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ180EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature traction and power conversion systems in next-generation electrified vehicles.
FAQ
What is the maximum continuous drain current rating for SQJ180EP-T1_GE3 at 125 °C case temperature?
The SQJ180EP-T1_GE3 supports 143 A continuous drain current at TC = 125 °C, as specified in its absolute maximum ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments. The SQJ180EP-T1_GE3 maintains this rating while retaining AEC-Q101 qualification and 0.0030 Ω RDS(on) at 10 V gate drive.
Does SQJ180EP-T1_GE3 have integrated avalanche energy rating, and what is its value?
Yes, the SQJ180EP-T1_GE3 is rated for 88 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, verified per JEDEC JESD24-1. This specification confirms its ability to withstand inductive switching transients without failure - a critical requirement for motor drive and battery protection circuits. The SQJ180EP-T1_GE3 achieves this with robust silicon design and 100 % UIS testing across production lots.
What is the gate threshold voltage range for SQJ180EP-T1_GE3, and how does it affect drive circuit design?
The SQJ180EP-T1_GE3 has a gate-source threshold voltage (VGS(th)) range of 2.2 V to 3.5 V at ID = 250 μA, with typical value 2.7 V. This tight distribution enables reliable turn-on with standard 5 V or 10 V gate drivers and supports logic-level compatibility in some configurations. Drive circuits for SQJ180EP-T1_GE3 must supply ≥10 V to achieve rated RDS(on) = 0.0030 Ω and ensure full enhancement across temperature and process variation.
Is SQJ180EP-T1_GE3 suitable for synchronous rectification, and what body diode parameters support this use?
Yes, the SQJ180EP-T1_GE3 is suitable for synchronous rectification due to its low VSD = 1.1 V at IF = 15 A and fast body diode recovery: trr = 50–65 ns, Qrr = 71–95 nC, and IRM(REC) = 2.4–3.6 A. These values reduce reverse recovery losses and EMI in high-frequency DC-DC topologies. The SQJ180EP-T1_GE3 leverages its low Qgd/Qgs ratio to further suppress shoot-through risk during dead-time transitions.
What thermal resistance values are specified for SQJ180EP-T1_GE3, and how do they impact PCB layout?
The SQJ180EP-T1_GE3 specifies RthJC = 0.3 °C/W (junction-to-case, drain) and RthJA = 42 °C/W (junction-to-ambient, 1"² FR4 PCB). To realize the 0.3 °C/W value, the exposed drain pad must be soldered to a minimum 1"² copper thermal pad with ≥2 oz. copper and multiple thermal vias. Layouts ignoring this requirement will default to RthJA-limited performance, risking thermal runaway at high current. The SQJ180EP-T1_GE3 datasheet provides exact land pattern dimensions in Document 78020.
SQJ180EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 248A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 117 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6645 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ180EP-T1_GE3 FAQ
1.How can I place an order for SQJ180EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ180EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ180EP-T1_GE3 reliable?
The price and inventory of SQJ180EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ180EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ180EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ180EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ180EP-T1_GE3?
SQJ180EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ180EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ180EP-T1_GE3?
For technical support, including SQJ180EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ180EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ180EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ180EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ180EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ180EP-T1_GE3?
All SQJ180EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ180EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ180EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ180EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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