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Vishay Siliconix SQJ182EP-T1_GE3
- Part No.:
- SQJ182EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ182EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SQJ182EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L package, rated for 80 V VDS, 210 A continuous drain current at TC = 25 °C, and RDS(on) = 4.1 mΩ (typ) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQJ182EP-T1_GE3 datasheet, SQJ182EP-T1_GE3 pinout, SQJ182EP-T1_GE3 application, or SQJ182EP-T1_GE3 equivalent, key selection criteria include its low Qgd/Qgs ratio (<1) for optimized switching, 100% Rg and UIS testing, and thermally robust PowerPAK SO-8L package with 0.38 °C/W RthJC.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve high current density and low conduction loss while maintaining fast switching performance. Its gate charge profile-Qg = 64 nC (typ), Qgd = 15 nC (typ), Qgs = 18 nC (typ)-supports efficient hard-switching in high-frequency DC-DC stages.
The device integrates a robust body diode with trr = 47 ns (typ), Qrr = 67 nC (typ), and VSD = 1.1 V (max) at IF = 15 A, enabling reliable synchronous rectification and freewheeling in bidirectional power stages without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 12 V/24 V/48 V automotive battery systems with transient margin |
| RDS(on) @ VGS = 10 V | 4.1 mΩ (typ) - Enables <1.5 W conduction loss at 20 A, critical for high-efficiency motor drivers |
| ID (continuous) | 210 A @ TC = 25 °C - Supports high-current traction inverters and starter-generator modules |
| Qgd/Qgs ratio | <1 - Reduces Miller-induced shoot-through risk and improves gate drive robustness in half-bridge topologies |
| TJ max | +175 °C - Qualified for under-hood environments including engine control units and transmission control modules |
| RthJC | 0.38 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >300 W power dissipation |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per JESD22-A108, including HTOL and TC |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced with exposed drain pad on bottom side. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A). Pin 1 marked by notch or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Internally paralleled source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with Rg = 0.9 Ω (typ); low gate resistance supports fast turn-on/turn-off with minimal external gate resistor |
| 6 | Drain (D) | Exposed copper drain pad - primary thermal path to PCB; requires solder mask defined land pattern per Doc. #78020 |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25% lower RDS(on) × Qg figure-of-merit vs. prior generation, improving efficiency in 100–500 kHz DC-DC converters |
| 100% Rg and UIS tested | Ensures gate robustness against overvoltage transients and single-pulse avalanche energy handling up to 78 mJ |
| Qgd/Qgs < 1 | Minimizes Miller plateau duration, enabling stable operation with standard gate drivers without active Miller clamping |
| Body diode trr = 47 ns (typ) | Reduces reverse recovery losses in synchronous rectifier mode, lowering system-level EMI and thermal stress |
| PowerPAK SO-8L thermal design | 0.38 °C/W RthJC enables >3× higher power density than standard SO-8, eliminating need for discrete heatsinks in many 48 V applications |
Applications
| Automotive HVAC Blower Control | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch controlling 300 W brushless blower motor in cabin climate system. IC Role / Device Role / Timing Role: Main power switch in 3-phase inverter stage, operating at 20–40 kHz PWM frequency. Use Value: Low RDS(on) minimizes conduction loss at 40 A peak, while 175 °C rating ensures reliability near engine bay heat sources. |
Use Scenario: Primary-side high-side switch in 48 V–12 V bi-directional buck-boost converter for start-stop systems. IC Role / Device Role / Timing Role: Synchronous rectifier and main switching element in interleaved topology running at 300 kHz. Use Value: Fast trr and low Qgd reduce switching loss and EMI, enabling compact magnetics and smaller output capacitors. |
| Electric Power Steering (EPS) Motor Driver | Onboard Charger (OBC) Auxiliary DC-DC Stage |
Use Scenario: Half-bridge leg in 3-phase EPS motor driver delivering up to 150 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: Robust UIS rating (39 A IAS) withstands inductive kickback during fault conditions without snubber circuits. |
Use Scenario: Isolated auxiliary supply (400 V–12 V) powering gate drivers and MCU in OBC main inverter. IC Role / Device Role / Timing Role: Primary-side switch in flyback or active clamp forward converter operating at 250 kHz. Use Value: AEC-Q101 qualification ensures long-term reliability in high-vibration, thermally cycling EV charging environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PbF | Higher RDS(on) = 5.3 mΩ (typ), TO-220 package, no AEC-Q101 qualification | Limited to industrial/non-automotive use; lacks thermal performance and automotive reliability validation | Acceptable only for cost-sensitive non-automotive 80 V switching where 175 °C operation is not required |
| STL220N8F7AG | Same 80 V rating, RDS(on) = 3.8 mΩ (typ), PowerFLAT 8x8 package, AEC-Q101 qualified | Thermal resistance RthJC = 0.55 °C/W - 45% higher than SQJ182EP-T1_GE3 - limits peak power handling | Preferred when board space allows larger footprint and lower current density suffices; less suitable for ultra-compact 210 A designs |
Compared with IRF1405PbF and STL220N8F7AG, SQJ182EP-T1_GE3 delivers superior thermal performance (0.38 °C/W), highest current rating (210 A), and verified AEC-Q101 compliance - making it the optimal choice for space-constrained, high-power automotive power stages requiring long-term under-hood reliability.
Availability
SQJ182EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQJ182EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ182EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature traction and power conversion systems in electrified vehicles.
FAQ
What is the maximum continuous drain current rating for SQJ182EP-T1_GE3 at 125 °C case temperature?
The SQJ182EP-T1_GE3 supports 120 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation, and must be validated with actual board-level thermal design using the provided RthJC = 0.38 °C/W value. SQJ182EP-T1_GE3 maintains full functionality across its -55 °C to +175 °C junction temperature range.
Does SQJ182EP-T1_GE3 have an integrated Schottky diode or is the body diode sufficient for synchronous rectification?
SQJ182EP-T1_GE3 does not integrate a separate Schottky diode; it relies on its optimized intrinsic body diode, characterized with trr = 47 ns (typ), Qrr = 67 nC (typ), and VSD = 1.1 V (max) at IF = 15 A. These parameters meet typical synchronous rectification requirements in 200–500 kHz DC-DC converters. SQJ182EP-T1_GE3 body diode performance is validated per AEC-Q101, ensuring robustness in automotive bidirectional power flow.
Is SQJ182EP-T1_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs such as SQJQ910EL?
SQJ182EP-T1_GE3 uses the standard PowerPAK® SO-8L (PPKSO8LWLA) footprint with identical pinout: pins 1–4 and 7–8 = Source, pin 5 = Gate, pin 6 = Drain. It is mechanically compatible with other devices in the same package outline, but electrical characteristics-including VGS(th), RDS(on), and Qg-differ significantly. SQJ182EP-T1_GE3 must be evaluated individually for circuit compatibility; no generic pin-to-pin substitution is implied.
What is the gate threshold voltage range for SQJ182EP-T1_GE3, and how does it affect drive circuit design?
The gate-source threshold voltage VGS(th) for SQJ182EP-T1_GE3 is specified as 2.2 V (min) to 3.5 V (max) at ID = 250 μA, with typical value 2.7 V. This tight range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥10 V to achieve rated RDS(on); SQJ182EP-T1_GE3 is not designed for logic-level (3.3 V or 5 V) gate drive. Gate drive design must account for Qg = 64 nC (typ) and Rg = 0.9 Ω (typ).
How is the thermal performance of SQJ182EP-T1_GE3 validated, and what PCB layout guidance applies?
Thermal ratings for SQJ182EP-T1_GE3-including RthJC = 0.38 °C/W and RthJA = 42 °C/W-are measured per JEDEC standards on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. Vishay provides a recommended land pattern (Doc. #78020) featuring a 3.96 mm × 4.80 mm thermal pad with 16 thermal vias (0.1 mm diameter). SQJ182EP-T1_GE3 requires full-solder coverage of the exposed drain pad to achieve specified thermal performance; incomplete solder fillets do not impair functionality per manufacturing note b.
SQJ182EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 96 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5392 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 395W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ182EP-T1_GE3 FAQ
1.How can I place an order for SQJ182EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ182EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ182EP-T1_GE3 reliable?
The price and inventory of SQJ182EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ182EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ182EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ182EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ182EP-T1_GE3?
SQJ182EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ182EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ182EP-T1_GE3?
For technical support, including SQJ182EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ182EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ182EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ182EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ182EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ182EP-T1_GE3?
All SQJ182EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ182EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ182EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ182EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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