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Vishay Siliconix SQJ184EP-T1_GE3
- Part No.:
- SQJ184EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ184EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,838
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Product details
Overview
SQJ184EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 80 V drain-source voltage, 118 A continuous drain current at TC = 25 °C, and 7.5 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® SO-8L package with bottom-side thermal pad, targeting high-current DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ184EP-T1_GE3 datasheet, SQJ184EP-T1_GE3 pinout, SQJ184EP-T1_GE3 application, or SQJ184EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, low gate charge (46 nC typ), and robust thermal performance (RthJC = 0.64 °C/W) in automotive power switching designs.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency 12 V/24 V automotive systems. Its gate threshold voltage (2.2–3.5 V) enables reliable drive from standard logic-level controllers, while its 2484 pF input capacitance and 46 nC total gate charge support efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a robust body diode with 37 ns typical reverse recovery time and 38 nC Qrr, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external Schottky diodes. Its 175 °C maximum junction temperature and AEC-Q101 qualification confirm suitability for under-hood environments subject to thermal cycling and vibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 24 V battery system overvoltage protection and load dump survival |
| RDS(on) | 7.5 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 118 A, critical for high-current power stages |
| ID (cont) | 118 A @ TC = 25 °C - Supports high-power solenoid drivers and starter relays without parallel devices |
| Qg | 46 nC typ - Reduces gate driver power demand and switching losses in 100–500 kHz SMPS |
| TJ max | +175 °C - Allows placement near heat sources (e.g., exhaust manifolds) without derating |
| RthJC | 0.64 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad for >200 W power dissipation |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTGB, HTRB, and ESD |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), 5.0 mm × 6.15 mm footprint with exposed drain thermal pad on bottom side. Pin 1 marked by notch or dot; leads are gull-wing, surface-mount compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four paralleled source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with 1.2 Ω typical gate resistance - supports stable Miller clamping and dV/dt immunity |
| 6, 7, 8 | Drain (D) | Three-drain terminals connected to internal die drain metallization and bottom thermal pad for low-inductance, high-current return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 15 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained ECUs |
| 100 % Rg tested | Ensures consistent gate drive timing across production lots, critical for multi-phase current balancing |
| 100 % UIS tested | Guarantees avalanche energy handling (51 mJ) for inductive load turn-off without snubbers |
| Exposed drain thermal pad | Enables 3× higher thermal conductivity vs. standard SO-8, reducing junction-to-board ΔT by >40 °C at 100 A |
| Bottom-side copper termination | Provides low-impedance current return path and mechanical anchoring for vibration-resistant mounting |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter (12 V → 5 V/3.3 V) |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 10 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization and de-energization with precise dead-time control. Use Value: 7.5 mΩ RDS(on) limits resistive loss to <1 W during full-on state; 37 ns trr minimizes body diode conduction loss during flyback recovery. | Use Scenario: Primary-side synchronous rectifier in isolated 12 V input buck converter powering ADAS sensors and microcontrollers. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300 kHz with zero-voltage switching capability. Use Value: 46 nC Qg enables low gate driver power consumption; 0.64 °C/W RthJC sustains 95 % efficiency at 50 A output with minimal heatsinking. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Controller |
Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V EPS assist motor with 60 A peak phase current. IC Role / Device Role / Timing Role: High-current, high-reliability N-channel switch in H-bridge topology with integrated body diode freewheeling. Use Value: AEC-Q101 qualification ensures functional safety compliance; 175 °C TJ rating supports operation adjacent to motor windings without thermal throttling. | Use Scenario: PWM-controlled high-side switch regulating airflow in cabin HVAC system using 12 V blower motor. IC Role / Device Role / Timing Role: Robust power switch handling 30 A continuous current with frequent start-stop cycles and load dump transients. Use Value: 80 V VDS withstands ISO 7637-2 Pulse 5a (load dump up to 60 V); 240 A IDM supports motor stall current without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V VDS, 220 A ID, 2.2 mΩ RDS(on) @ 10 V, PowerFLAT 5x6 package | Limited to 60 V systems; higher current but lower voltage rating than SQJ184EP-T1_GE3 | Select when higher current and lower RDS(on) are prioritized over 80 V blocking and AEC-Q101 qualification |
| IRF1404ZPbF | 40 V VDS, 184 A ID, 3.8 mΩ RDS(on) @ 10 V, TO-220AB package | Non-automotive grade; through-hole; lacks AEC-Q101 and high-temp operation | Use only in non-automotive industrial or consumer applications where cost and legacy layout compatibility outweigh reliability requirements |
Compared with STL220N6F7AG and IRF1404ZPbF, SQJ184EP-T1_GE3 uniquely combines 80 V rating, AEC-Q101 qualification, +175 °C operation, and PowerPAK SO-8L surface-mount packaging-making it the only option qualified for under-hood automotive switching in 24 V architectures requiring long-term reliability and thermal resilience.
Availability
SQJ184EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, automotive DC-DC converters, and HVAC motor controllers requiring stable component supply across extended vehicle lifecycles.
Supply support for SQJ184EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for automotive, industrial, and computing markets.
The SQJ184EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature switching in next-generation 12 V/24 V vehicle electrical systems.
FAQ
What is the maximum continuous drain current rating for SQJ184EP-T1_GE3 at 125 °C case temperature?
The SQJ184EP-T1_GE3 supports 68 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the device's 175 °C maximum junction temperature limit. The 68 A value is confirmed in the official Vishay datasheet S22-0857-Rev. A and applies under steady-state conditions with proper PCB thermal management.
Is SQJ184EP-T1_GE3 suitable for synchronous rectification in a 40 V automotive buck converter?
Yes, SQJ184EP-T1_GE3 is suitable for synchronous rectification in a 40 V automotive buck converter. Its 80 V VDS rating provides 2× voltage margin over 40 V operation, and its 37 ns typical body diode reverse recovery time (trr) and 38 nC Qrr minimize switching losses during freewheeling. The device's 7.5 mΩ RDS(on) also ensures low conduction loss at typical output currents up to 50 A, making SQJ184EP-T1_GE3 a validated choice for high-efficiency automotive DC-DC stages.
Does SQJ184EP-T1_GE3 require a gate resistor for automotive PWM applications?
SQJ184EP-T1_GE3 benefits from an external gate resistor in automotive PWM applications to control switching speed and suppress ringing. Its typical gate resistance is 1.2 Ω, but a 5–10 Ω series resistor is recommended to dampen gate oscillation caused by PCB trace inductance and ensure clean turn-on/turn-off edges. This practice improves EMI performance and prevents false triggering in noisy vehicle environments, as confirmed in Vishay's application guidance for TrenchFET® Gen IV devices.
How does the PowerPAK SO-8L package of SQJ184EP-T1_GE3 improve thermal performance compared to standard SO-8?
The PowerPAK SO-8L package of SQJ184EP-T1_GE3 improves thermal performance by incorporating an exposed drain pad on the bottom side that serves as the primary thermal path to the PCB. This design achieves a junction-to-case (drain) thermal resistance of 0.64 °C/W-over 5× better than standard SO-8 packages-and allows >90 % of heat to be conducted directly into the board's copper plane. The result is significantly lower junction temperatures under high-current operation, extending reliability in automotive under-hood applications where SQJ184EP-T1_GE3 is deployed.
What is the gate-source leakage current specification for SQJ184EP-T1_GE3 at ±20 V?
The gate-source leakage current (IGSS) for SQJ184EP-T1_GE3 is specified as ±100 nA maximum at VGS = ±20 V and TC = 25 °C, per the Electrical Specifications table in the Vishay datasheet S22-0857-Rev. A. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance gate circuits, supporting reliable operation in automotive microcontroller-driven gate drivers where power efficiency and noise immunity are critical for SQJ184EP-T1_GE3 deployment.
SQJ184EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3478 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 234W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ184EP-T1_GE3 FAQ
1.How can I place an order for SQJ184EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ184EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ184EP-T1_GE3 reliable?
The price and inventory of SQJ184EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ184EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ184EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ184EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ184EP-T1_GE3?
SQJ184EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ184EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ184EP-T1_GE3?
For technical support, including SQJ184EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ184EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ184EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ184EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ184EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ184EP-T1_GE3?
All SQJ184EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ184EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ184EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ184EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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