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Vishay Siliconix SQJ402EP-T1_BE3
- Part No.:
- SQJ402EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ402EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:6,849
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Product details
Overview
SQJ402EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 32 A continuous drain current at 25 °C and 125 °C, and 0.0110 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ402EP-T1_BE3 datasheet, SQJ402EP-T1_BE3 pinout, SQJ402EP-T1_BE3 application, or SQJ402EP-T1_BE3 equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, PowerPAK® SO-8L package footprint, and verified performance across -55 °C to +175 °C ambient conditions.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while its 34 nC typical total gate charge supports efficient PWM operation at frequencies up to 200 kHz.
The device integrates a co-packaged body diode with 0.77–1.2 V forward voltage at 7 A, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is enabled by its 1.8 °C/W RthJC, allowing direct heatsinking via the exposed drain pad on the bottom side of the PowerPAK® SO-8L package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands full load transients in 24 V commercial vehicle systems without avalanche breakdown |
| RDS(on) @ VGS = 10 V | 0.0110 Ω - Delivers ≤3.5 W conduction loss at 18 A, enabling compact thermal design |
| ID Continuous | 32 A @ TC = 25 °C and 125 °C - Sustains full-rated current across full automotive temperature range |
| Qg Total Gate Charge | 34 nC typical - Enables <1 μs switching transitions with 10 Ω gate driver, minimizing switching loss |
| RthJC | 1.8 °C/W - Allows direct thermal path to PCB copper or external heatsink, critical for engine bay placement |
| AEC-Q101 Qualified | Validated for automotive use per stress test requirements - Supports ASIL-B system integration without additional qualification |
| EAS | 48 mJ - Absorbs inductive energy during fault events in motor drives and solenoid controls |
Pinout & Package
Package: PowerPAK® SO-8L (single configuration), 5.13 mm × 6.15 mm footprint with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 5 (G) | Gate | Single gate input with 1.39 Ω max gate resistance - compatible with standard gate drivers without added series resistance |
| 6, 7, 8 (D) | Drain | Three drain terminals plus large bottom-exposed copper pad provide low-inductance, high-current path to ground plane or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Enables 0.0110 Ω RDS(on) in SO-8L footprint - reduces board area vs. TO-252 or DPAK alternatives |
| AEC-Q101 qualification | Validated for automotive under-hood environments including temperature cycling, humidity bias, and mechanical shock |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from surge overstress |
| Exposed drain pad | Provides dual thermal and electrical connection to PCB - lowers RthJA to 65 °C/W on 1"² FR-4 and enables >2× power dissipation vs. standard SO-8 |
| 175 °C maximum junction temperature | Supports operation in high-ambient zones (e.g., near exhaust manifolds or inverters) without derating |
Applications
| Engine Start-Stop Control | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch controlling starter motor engagement and disengagement during automatic stop/start cycles. IC Role / Device Role / Timing Role: Power switch managing bidirectional current flow between 12 V battery and starter solenoid, with fast turn-off to prevent back-EMF damage. Use Value: 32 A rating and 48 mJ EAS withstand repeated cranking surges; 175 °C rating ensures reliability near hot engine blocks. | Use Scenario: Primary-side high-side switch in isolated 48 V to 12 V bi-directional DC-DC converter for mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier control element operating at 100–200 kHz PWM with low Qg and RDS(on) to minimize conduction and switching losses. Use Value: 0.0110 Ω RDS(on) and 34 nC Qg enable >95 % efficiency at 10 kW peak power; AEC-Q101 ensures long-term stability in vibration-prone powertrain modules. |
| Electric Power Steering (EPS) Motor Driver | Commercial Vehicle Battery Disconnect Switch |
Use Scenario: Half-bridge high-side switch in three-phase inverter driving brushless EPS motor. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET delivering precise torque control with minimal dead-time distortion. Use Value: Low Crss (62–78 pF) minimizes Miller-induced shoot-through risk; 1.8 °C/W RthJC allows direct heatsink mounting for sustained 25 A RMS operation. | Use Scenario: Isolation switch between main traction battery and auxiliary loads in Class 8 trucks and buses. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactors, providing zero-arc switching and programmable fault response. Use Value: 100 V VDS accommodates 24 V nominal + 100 V load dump transients; 100 % UIS tested for safe interruption of 500 A short-circuit currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A rated, DFN8 5×6 mm package, RDS(on) = 0.0017 Ω @ 10 V - lower RDS(on) but higher gate charge (120 nC) | Targeted at high-current traction inverters; not AEC-Q101 qualified in all variants | Select when ultra-low conduction loss dominates over switching speed and automotive qualification is secondary |
| IRF3205PbF | 55 V, 110 A, TO-220 package, RDS(on) = 0.008 Ω @ 10 V - higher voltage rating insufficient for 48 V systems | Legacy industrial motor control; lacks AEC-Q101, 175 °C rating, and SO-8L thermal performance | Select only for cost-sensitive non-automotive 12 V applications where board space and thermal constraints are relaxed |
Compared with STL220N10F7 and IRF3205PbF, the SQJ402EP-T1_BE3 uniquely balances AEC-Q101 compliance, 100 V capability, SO-8L thermal efficiency, and gate drive simplicity - making it optimal for space-constrained, thermally demanding automotive subsystems requiring production-grade reliability.
Availability
SQJ402EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, electric power steering modules, and battery management systems requiring stable component supply across extended automotive product lifecycles.
Supply support for SQJ402EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ402EP-T1_BE3 belongs to Vishay's automotive-qualified Power MOSFET family, engineered specifically for high-efficiency, high-temperature power switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJ402EP-T1_BE3 at 125 °C case temperature?
The SQJ402EP-T1_BE3 maintains a continuous drain current rating of 32 A at TC = 125 °C, matching its 25 °C rating due to its optimized thermal design and trench silicon structure. This flat derating curve simplifies thermal modeling in high-ambient automotive environments and ensures consistent performance in engine bay-mounted modules without current reduction.
Does SQJ402EP-T1_BE3 require a gate resistor for reliable operation with standard microcontroller GPIOs?
The SQJ402EP-T1_BE3 has a maximum gate resistance of 1.39 Ω and gate threshold voltage of 1.5–2.5 V, making it directly drivable by 3.3 V or 5 V microcontrollers without external gate resistors in low-frequency (<10 kHz) switching. For PWM above 50 kHz, a 5–10 Ω series gate resistor is recommended to damp ringing and control dv/dt - confirmed by its 34 nC Qg and 13 nC Qgd values in the datasheet.
How is thermal performance validated for SQJ402EP-T1_BE3 in real PCB layouts?
SQJ402EP-T1_BE3 thermal ratings are measured on a standardized 1" × 1" FR-4 PCB with 2 oz. copper on both sides (100 % coverage). Its 1.8 °C/W RthJC is verified via junction-to-case measurement, while 65 °C/W RthJA reflects practical board-level dissipation. The exposed drain pad must be soldered to a thermal pad connected to internal ground planes or external heatsinks - per Vishay's recommended pad layout in document 63818.
Is SQJ402EP-T1_BE3 suitable for reverse polarity protection in 24 V commercial vehicle systems?
Yes, SQJ402EP-T1_BE3 is suitable for reverse polarity protection due to its 100 V VDS, 32 A continuous rating, and integrated body diode with 0.77–1.2 V VSD. When placed in the high-side configuration with gate driven by a charge pump or dedicated controller, it blocks reverse current while maintaining low forward drop - validated for 24 V truck and bus applications per AEC-Q101 stress profiles.
What does "100 % Rg and UIS tested" mean for SQJ402EP-T1_BE3 in production screening?
"100 % Rg and UIS tested" means every SQJ402EP-T1_BE3 unit undergoes inline gate resistance verification and unclamped inductive switching stress testing during final test. Rg screening ensures gate drive timing consistency across batches, while UIS testing subjects each device to controlled inductive energy pulses (up to 48 mJ) to eliminate latent weaknesses - a requirement for AEC-Q101 qualification and critical for motor control reliability.
SQJ402EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 10.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2286 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ402EP-T1_BE3 FAQ
1.How can I place an order for SQJ402EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ402EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ402EP-T1_BE3 reliable?
The price and inventory of SQJ402EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ402EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ402EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ402EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ402EP-T1_BE3?
SQJ402EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ402EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ402EP-T1_BE3?
For technical support, including SQJ402EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ402EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ402EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ402EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ402EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ402EP-T1_BE3?
All SQJ402EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ402EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ402EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ402EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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