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Vishay Siliconix SQJ403BEEP-T1_BE3
- Part No.:
- SQJ403BEEP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ403BEEP-T1_BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,702
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Product details
Overview
SQJ403BEEP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -30 V drain-source voltage, 0.0085 Ω RDS(on) at VGS = -10 V, and -30 A continuous drain current at TC = 25 °C - used in high-reliability 12 V automotive load switching such as body control modules and seat motor drivers.
For engineers reviewing the SQJ403BEEP-T1_BE3 datasheet, SQJ403BEEP-T1_BE3 pinout, SQJ403BEEP-T1_BE3 application, or SQJ403BEEP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, 3000 V HBM ESD rating, and low gate charge (75 nC typical) enabling efficient PWM-controlled high-side switching in space-constrained automotive PCBs.
Technical Context
This device operates as a high-side load switch in automotive power distribution networks, leveraging its negative gate threshold (-1.5 to -2.5 V) and robust avalanche capability (211 mJ single-pulse) to handle inductive kickback from solenoids and motors. Its trench-based silicon structure delivers stable RDS(on) across -55 to +175 °C, with <0.015 Ω max at 175 °C and VGS = -10 V.
The PowerPAK SO-8L package features exposed-drain thermal pad on the bottom side for direct PCB copper connection, achieving 2.2 °C/W junction-to-case thermal resistance. Gate drive compatibility is optimized for standard -10 V logic-level control, with 4.3 kΩ typical gate resistance and 19 nC gate-drain charge limiting Miller-induced turn-off delay.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - supports full 12 V automotive battery rail with margin for load dump transients |
| RDS(on) @ VGS = -10 V | 0.0085 Ω - enables ≤2.5 W conduction loss at -30 A, critical for thermally constrained modules |
| ID Continuous | -30 A @ TC = 25 °C - sustains peak loads without derating when mounted on 1"² FR4 PCB |
| EAS | 211 mJ - withstands repetitive inductive energy spikes in motor commutation circuits |
| TJ Max | +175 °C - meets under-hood temperature requirements per AEC-Q101 stress test conditions |
| Qg | 75 nC typical - reduces gate driver power demand and switching losses in 20–100 kHz PWM applications |
| RthJC | 2.2 °C/W - allows direct thermal coupling to inner-layer copper planes for high-power density designs |
Pinout & Package
PowerPAK® SO-8L single-package with exposed drain pad on bottom side; dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H); RoHS-compliant, lead (Pb)-free, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1/2/3/4/7/8 are internally bonded to source metallization - used for low-inductance return path and thermal conduction |
| 5 | Gate (G) | Control input; requires -10 V to fully enhance; 4.3 kΩ typical gate resistance limits ringing during fast edge transitions |
| 6 | Drain (D) | Main power output terminal; connected to exposed copper pad on package underside - primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per Rev G requirements |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor drive |
| TrenchFET® technology | Enables lower RDS(on) × Qg figure-of-merit than planar P-channel MOSFETs, improving efficiency in high-frequency switching |
| ESD protection | 3000 V HBM rating - protects against assembly handling damage and system-level ESD events in vehicle assembly lines |
| Exposed drain thermal pad | Reduces thermal resistance by >50 % vs. standard SO-8; enables 68 W power dissipation at TC = 25 °C |
Applications
| Body Control Module (BCM) | Seat Motor Driver |
|---|---|
Use Scenario: Controlling door lock actuators, mirror adjusters, and interior lighting via centralized BCM. IC Role / Device Role / Timing Role: High-side P-channel switch managing 12 V loads with reverse-battery protection and short-circuit current limiting. Use Value: Low RDS(on) minimizes voltage drop and heat generation during extended duty cycles; AEC-Q101 ensures reliability over 15-year vehicle lifetime. | Use Scenario: Driving bidirectional DC motors for power seat position adjustment. IC Role / Device Role / Timing Role: One quadrant of H-bridge configuration, used as high-side switch with freewheeling diode conduction during PWM off-time. Use Value: Integrated body diode with -0.75 V forward voltage reduces need for external flyback diodes; 175 °C rating supports operation near heated seat elements. |
| Roof Module Switching | Engine Bay Fan Control |
Use Scenario: Managing sunroof motor, panoramic roof shade, and overhead lighting circuits. IC Role / Device Role / Timing Role: Load switch with integrated overtemperature shutdown and current sensing via RDS(on) monitoring. Use Value: Stable RDS(on) over temperature enables accurate current estimation up to 150 °C ambient; compact PowerPAK SO-8L saves board space in tight roof console layouts. | Use Scenario: Controlling radiator cooling fans in engine compartment under high ambient temperatures. IC Role / Device Role / Timing Role: High-current, high-temperature load switch operating directly from battery rail with minimal heatsinking. Use Value: 2.2 °C/W RthJC allows direct thermal transfer to chassis ground plane; 211 mJ EAS handles fan coil back-EMF without snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω), no AEC-Q101 qualification, 150 °C TJ max | Requires external heatsink; unsuitable for under-hood or safety-critical modules | Select only for non-automotive industrial prototypes where cost outweighs size and qualification needs |
| DMT6009LPS-13 | PowerDI 5060 package, -60 V rating, 0.009 Ω RDS(on), AEC-Q101 qualified, but 150 °C TJ max | Better voltage margin but lower thermal endurance; less suitable for sustained high-temp engine bay use | Prefer for 24 V commercial vehicle systems where 175 °C operation is not required |
Compared with IRF9530NPBF and DMT6009LPS-13, SQJ403BEEP-T1_BE3 uniquely combines AEC-Q101 compliance, 175 °C junction rating, and ultra-low RDS(on) in a surface-mount PowerPAK SO-8L - making it optimal for thermally dense, safety-conscious automotive modules where long-term reliability and minimal footprint are mandatory.
Availability
SQJ403BEEP-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, seat control systems, and engine bay fan management requiring stable component supply across multi-year production programs.
Supply support for SQJ403BEEP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ403BEEP-T1_BE3 belongs to Vishay's TrenchFET® automotive-qualified P-channel MOSFET product line, engineered specifically for high-reliability 12 V load switching in harsh under-hood and cabin environments.
FAQ
What is the maximum gate-source voltage rating for SQJ403BEEP-T1_BE3?
The SQJ403BEEP-T1_BE3 has a ±20 V gate-source voltage rating, meaning it can safely operate with VGS between -20 V and +20 V. This allows robust gate drive design with margin against transients. Exceeding this range risks permanent gate oxide damage. The device is typically driven with -10 V for full enhancement and 0 V for turn-off in high-side configurations. SQJ403BEEP-T1_BE3 gate leakage remains below ±1 mA even at ±20 V, ensuring stable biasing in noisy automotive environments.
Is SQJ403BEEP-T1_BE3 suitable for high-frequency PWM switching above 50 kHz?
Yes, SQJ403BEEP-T1_BE3 supports PWM switching up to 100 kHz due to its low total gate charge (75 nC typical) and fast switching times: td(on) = 38 ns, tr = 82 ns, td(off) = 134 ns, and tf = 178 ns. These values were measured with 1 Ω gate resistance and -15 V VDD. At higher frequencies, layout parasitics dominate performance - SQJ403BEEP-T1_BE3's PowerPAK SO-8L package minimizes source inductance, preserving switching integrity. Thermal management remains critical above 50 kHz due to increased dynamic losses.
Does SQJ403BEEP-T1_BE3 include an integrated body diode, and what is its forward voltage?
Yes, SQJ403BEEP-T1_BE3 includes a monolithic body diode inherent to its vertical P-channel MOSFET structure. At IF = -3 A and VGS = 0 V, the source-to-drain forward voltage (VSD) is -0.75 V typical and -1.2 V maximum at 25 °C. This diode conducts during PWM off-time in high-side switch configurations, eliminating need for external freewheeling diodes. VSD increases slightly with temperature but remains within specification up to 175 °C junction temperature.
How is thermal performance validated for SQJ403BEEP-T1_BE3 in real PCB layouts?
SQJ403BEEP-T1_BE3 thermal ratings are validated using a standardized 1" × 1" FR4 PCB with 2 oz. copper on both sides, per JEDEC JESD51-2. Its RthJA is 68 °C/W under those conditions, while RthJC is 2.2 °C/W - measured directly to the exposed drain pad. For production designs, Vishay provides recommended minimum pad patterns (Doc #63818) and solder profile guidance (Doc #73257). SQJ403BEEP-T1_BE3's exposed drain must be soldered to a large copper pour for optimal thermal transfer; insufficient copper area will degrade RthJA significantly.
What does "100 % Rg and UIS tested" mean for SQJ403BEEP-T1_BE3?
"100 % Rg and UIS tested" means every SQJ403BEEP-T1_BE3 unit undergoes production screening for gate resistance (Rg = 2–7.5 kΩ) and unclamped inductive switching (UIS) robustness. UIS testing subjects each device to controlled inductive energy pulses (L = 10 mH, IAS = -6.5 A) to verify avalanche capability. This 100 % test ensures zero-defect readiness for automotive applications where failure modes like gate oxide rupture or avalanche-induced latch-up must be eliminated. SQJ403BEEP-T1_BE3 passes with EAS = 211 mJ, exceeding AEC-Q101 requirements.
SQJ403BEEP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 164 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ403BEEP-T1_BE3 FAQ
1.How can I place an order for SQJ403BEEP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ403BEEP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ403BEEP-T1_BE3 reliable?
The price and inventory of SQJ403BEEP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ403BEEP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ403BEEP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ403BEEP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ403BEEP-T1_BE3?
SQJ403BEEP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ403BEEP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ403BEEP-T1_BE3?
For technical support, including SQJ403BEEP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ403BEEP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ403BEEP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ403BEEP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ403BEEP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ403BEEP-T1_BE3?
All SQJ403BEEP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ403BEEP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ403BEEP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ403BEEP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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