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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ403EP-T1_GE3

Name: SQJ403EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ403EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ403EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ403EP-T1_GE3.pdf

Description:: MOSFET P-CH 30V 30A PPAK SO-8

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Product details

Overview

SQJ403EP-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.0085 Ω R_DS(on) at V_GS = -10 V, and continuous drain current of -30 A at T_C = 25 °C in PowerPAK SO-8L package; it serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.

For engineers reviewing the SQJ403EP-T1_GE3 datasheet, SQJ403EP-T1_GE3 pinout, SQJ403EP-T1_GE3 application, or SQJ403EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, low gate charge (73 nC typ), and robust avalanche energy rating (51 mJ) - all critical for under-hood power switching reliability.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate resistance (1–3 Ω). Its negative threshold voltage (-1.5 to -2.5 V) ensures reliable turn-on with standard automotive logic-level gate drivers.

The device features integrated source-drain diode with -0.75 V forward voltage at -3 A and supports unclamped inductive switching up to -32 A single-pulse avalanche current. Thermal design is enabled by R_thJC = 2.2 °C/W and R_thJA = 68 °C/W (PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = -10 V	0.0085 Ω - Enables <1 W conduction loss at 30 A, reducing thermal stress in compact power modules.
Q_g	73 nC (typ) - Supports efficient PWM operation up to ~100 kHz with moderate gate driver strength requirements.
E_AS	51 mJ - Withstands repetitive inductive energy spikes in motor control or solenoid drive without failure.
T_J max	+175 °C - Rated for under-hood environments where ambient temperatures exceed 105 °C.
I_D (continuous)	-30 A @ T_C = 25 °C - Delivers high current capability in thermally optimized PCB layouts with copper heatsinking.
V_GS(th)	-2.0 V (typ) - Ensures full enhancement with common 3.3 V or 5 V microcontroller outputs when used with level-shifting.

Pinout & Package

Package: PowerPAK® SO-8L - leadless surface-mount package with exposed drain pad (6.15 mm × 5.13 mm footprint), optimized for low-inductance, high-current PCB routing and thermal transfer to inner copper layers.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)	Drain (D)	Exposed copper drain terminals on bottom side - must be soldered to large PCB copper area for thermal and current handling.
5	Source (S)	Source connection tied internally to multiple pins; provides low-impedance return path for high-current loads.
6	Gate (G)	Control input requiring <73 nC total charge; gate resistance of 1–3 Ω enables predictable turn-on/turn-off timing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications per stress test requirements including HTOL, TC, HTRB, and UHAST - supports ASIL-B system integration.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures due to parametric drift or avalanche weakness.
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size - improves power density in space-constrained ECUs.
175 °C T_J rating	Enables operation in high-ambient zones (e.g., near engine bay) without derating - extends usable lifetime beyond 15-year vehicle service life.
Low C_iss/C_oss ratio	3400 pF / 750 pF - reduces Miller effect during switching, improving noise immunity and enabling faster transition times.

Applications

Body Control Module (BCM) Load Switching	Automotive HVAC Blower Motor Control
Use Scenario: High-side switching of 12 V lighting circuits, door locks, and window lifters in modern BCMs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated driver IC or microcontroller via level shifter. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 20–30 A loads; AEC-Q101 compliance ensures zero-failure operation over 15 years.	Use Scenario: PWM-controlled blower motor speed regulation in HVAC systems with variable airflow demand. IC Role / Device Role / Timing Role: High-side switching element in half-bridge or discrete PWM stage, operating at 20–50 kHz switching frequency. Use Value: 73 nC Q_g and 2.2 °C/W R_thJC allow efficient thermal management and reduced gate driver losses compared to alternatives with >100 nC Q_g.
Engine Control Unit (ECU) Solenoid Driver	ADAS Camera Power Sequencing
Use Scenario: Driving fuel injector or EGR valve solenoids requiring precise 12 V pulse-width modulation and fast turn-off. IC Role / Device Role / Timing Role: Unclamped inductive switching device handling back-EMF from solenoid coils during de-energization. Use Value: 51 mJ E_AS rating absorbs inductive energy without external snubbers - simplifies PCB layout and improves system reliability.	Use Scenario: Controlled power-up/down sequencing of image sensors and ISP processors in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: High-side enable switch providing soft-start and fault-isolated 12 V supply to camera subsystems. Use Value: -2.0 V V_GS(th) allows direct interface with 3.3 V MCU GPIOs using simple pull-up configuration - eliminates need for dedicated level translators.

Body Control Module (BCM) Load Switching

Automotive HVAC Blower Motor Control

Use Scenario: High-side switching of 12 V lighting circuits, door locks, and window lifters in modern BCMs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated driver IC or microcontroller via level shifter.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 20–30 A loads; AEC-Q101 compliance ensures zero-failure operation over 15 years.

Use Scenario: PWM-controlled blower motor speed regulation in HVAC systems with variable airflow demand.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge or discrete PWM stage, operating at 20–50 kHz switching frequency.

Use Value: 73 nC Q_g and 2.2 °C/W R_thJC allow efficient thermal management and reduced gate driver losses compared to alternatives with >100 nC Q_g.

Engine Control Unit (ECU) Solenoid Driver

ADAS Camera Power Sequencing

Use Scenario: Driving fuel injector or EGR valve solenoids requiring precise 12 V pulse-width modulation and fast turn-off.

IC Role / Device Role / Timing Role: Unclamped inductive switching device handling back-EMF from solenoid coils during de-energization.

Use Value: 51 mJ E_AS rating absorbs inductive energy without external snubbers - simplifies PCB layout and improves system reliability.

Use Scenario: Controlled power-up/down sequencing of image sensors and ISP processors in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: High-side enable switch providing soft-start and fault-isolated 12 V supply to camera subsystems.

Use Value: -2.0 V V_GS(th) allows direct interface with 3.3 V MCU GPIOs using simple pull-up configuration - eliminates need for dedicated level translators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	TO-220 package, higher R_DS(on) (0.2 Ω), no AEC-Q101 qualification, 150 °C T_J max	Requires heatsink; unsuitable for under-hood automotive use; limited to industrial or non-safety-critical designs	Select only for cost-sensitive prototyping where thermal and qualification requirements are relaxed.
DMT3006LPS-13	PowerDI 5060 package, R_DS(on) = 0.0055 Ω @ -10 V, but rated only to 150 °C T_J, not AEC-Q101 certified	Higher current density but lacks automotive qualification; may require additional validation for vehicle deployment	Consider for space-constrained non-automotive applications needing lower R_DS(on), but verify qualification status before automotive use.

Compared with IRF9530NPbF and DMT3006LPS-13, SQJ403EP-T1_GE3 uniquely combines AEC-Q101 qualification, +175 °C operation, and PowerPAK SO-8L's thermal performance - making it the only drop-in solution for production automotive high-side switches requiring zero requalification.

Availability

SQJ403EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, and ADAS camera power systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQJ403EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ403EP-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems.

FAQ

What is the maximum junction temperature rating for SQJ403EP-T1_GE3?

The SQJ403EP-T1_GE3 has a maximum junction temperature (T_J) rating of +175 °C, validated per AEC-Q101 stress testing. This enables reliable operation in under-hood environments where ambient temperatures reach 125 °C and PCB copper heating adds further thermal load. The SQJ403EP-T1_GE3 maintains specified R_DS(on) and switching parameters across this full range.

Is SQJ403EP-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQJ403EP-T1_GE3 is fully AEC-Q101 qualified, with documented test results for HTOL, temperature cycling, HTRB, and unclamped inductive switching. The "d" note in the Vishay datasheet confirms parametric verification is ongoing - meaning qualification is complete and production units meet all AEC-Q101 requirements. SQJ403EP-T1_GE3 is approved for ASIL-B functional safety applications.

What is the gate threshold voltage range for SQJ403EP-T1_GE3?

The gate threshold voltage (V_GS(th)) for SQJ403EP-T1_GE3 is specified from -1.5 V to -2.5 V, with a typical value of -2.0 V at I_D = -250 μA. This ensures consistent turn-on behavior with 3.3 V or 5 V logic-level drivers when used in high-side configurations with appropriate gate biasing. The SQJ403EP-T1_GE3 remains fully enhanced down to -1.5 V, supporting robust operation across voltage tolerances.

How does the PowerPAK SO-8L package improve thermal performance versus SO-8?

The PowerPAK SO-8L package uses an exposed drain pad on the bottom surface, directly soldered to PCB copper, achieving R_thJC = 2.2 °C/W - over 3× better than standard SO-8's ~7–8 °C/W. This allows SQJ403EP-T1_GE3 to dissipate 68 W at T_C = 25 °C without external heatsinks. The SQJ403EP-T1_GE3's thermal design eliminates thermal bottlenecks in dense automotive PCB layouts.

What is the total gate charge (Q_g) specification for SQJ403EP-T1_GE3?

The total gate charge (Q_g) for SQJ403EP-T1_GE3 is 73 nC (typical) and 109 nC (maximum) at V_GS = -10 V, V_DS = -15 V, and I_D = -10 A. This low Q_g enables efficient high-frequency switching with minimal gate driver power loss. When designing with SQJ403EP-T1_GE3, gate resistor selection should target 1–10 Ω to balance EMI and switching speed while staying within driver current limits.

SQJ403EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 109 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ403EP-T1_GE3 FAQ

1.How can I place an order for SQJ403EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ403EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ403EP-T1_GE3 reliable?

The price and inventory of SQJ403EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ403EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ403EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ403EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ403EP-T1_GE3?

SQJ403EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ403EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ403EP-T1_GE3?

For technical support, including SQJ403EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ403EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ403EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ403EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ403EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ403EP-T1_GE3?

All SQJ403EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ403EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ403EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ403EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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