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Vishay Siliconix SQJ407EP-T1_BE3
- Part No.:
- SQJ407EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ407EP-T1_BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SQJ407EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 60 A continuous drain current at 25 °C, and 0.0044 Ω RDS(on) at VGS = -10 V. It serves as a high-current, high-temperature load switch in 12 V automotive power distribution systems, including body control modules and seat/mirror actuation circuits.
For engineers reviewing the SQJ407EP-T1_BE3 datasheet, SQJ407EP-T1_BE3 pinout, SQJ407EP-T1_BE3 application, or SQJ407EP-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK® SO-8L package layout, AEC-Q101 qualification status, and real-world substitution guidance - all grounded in Vishay's official S22-0224-Rev. B specification.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with robust avalanche capability (84 mJ EAS). Its gate threshold voltage range of -1.5 V to -2.5 V enables reliable turn-on with standard 3.3 V or 5 V logic-level controllers in high-side configurations.
The device features 100 % Rg and UIS testing per AEC-Q101, operates up to +175 °C junction temperature, and delivers 68 W maximum power dissipation at TC = 25 °C. Its RthJC of 2.2 °C/W supports efficient heat transfer to PCB copper planes in compact automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive battery rail with surge margin |
| RDS(on) @ VGS = -10 V | 0.0044 Ω - Enables ≤ 15.8 W conduction loss at 60 A, critical for thermally constrained ECUs |
| ID (continuous) | -60 A @ TC = 25 °C - Supports high-power loads like heated seats or window lift motors |
| Qg | 169 nC (typ) - Determines gate drive strength requirement for <35 ns turn-on delay |
| EAS | 84 mJ - Withstands inductive energy from solenoid/relay switching without failure |
| TJ max | +175 °C - Qualified for under-hood applications with no derating up to ambient 125 °C |
| AEC-Q101 | Qualified - Meets automotive reliability standards for vibration, temperature cycling, and HTRB |
Pinout & Package
Package: PowerPAK® SO-8L (single), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A). Exposed drain pad on bottom enables direct thermal path to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance |
| 5 | Gate (G) | Control input; requires ≤ 1.6 Ω gate resistance to limit ringing during 169 nC charge/discharge |
| 6 | Drain (D) | Main power output; connected to exposed copper pad on bottom for thermal and current conduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 22 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, reducing board area |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and inductive kickback in motor drives |
| Body diode trr = 39 ns (typ) | Minimizes reverse recovery losses in synchronous rectification or bidirectional current paths |
| RthJC = 2.2 °C/W | Enables >90 % of heat to flow from junction to case, supporting 68 W power handling on 1" FR4 PCB |
| Exposed drain thermal pad | Provides low-impedance thermal path to inner-layer copper pours, eliminating need for thermal vias |
Applications
| Body Control Module (BCM) | Seat/Mirror Actuation |
|---|---|
|
Use Scenario: High-side switching of 12 V power to door locks, interior lighting, and trunk release solenoids. IC Role / Device Role / Timing Role: P-channel load switch controlling power delivery; operates in static on/off mode with <100 ns transition times. Use Value: 0.0044 Ω RDS(on) limits voltage drop to <264 mV at 60 A, preserving solenoid coil energization across battery voltage range. |
Use Scenario: Bidirectional motor control for power seat adjustment and mirror positioning using H-bridge topology. IC Role / Device Role / Timing Role: High-side switch in half-bridge leg; body diode conducts reverse current during PWM freewheeling. Use Value: 39 ns body diode trr and 45 nC Qrr reduce switching losses by ≥35 % vs. standard automotive MOSFETs at 20 kHz PWM. |
| Engine Bay Sensors | Roof Module Power Distribution |
|
Use Scenario: Power gating of pressure, temperature, and knock sensors located near engine block. IC Role / Device Role / Timing Role: Always-on protection switch; must survive 175 °C junction temperature during extended idling. Use Value: +175 °C TJ rating and AEC-Q101 qualification ensure functional stability without derating in under-hood environments. |
Use Scenario: Centralized 12 V distribution to sunroof, panoramic roof, and ambient lighting subsystems. IC Role / Device Role / Timing Role: High-current main power switch with integrated avalanche energy handling. Use Value: 84 mJ EAS withstands inductive spikes from multiple parallel loads disconnecting simultaneously. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package; RDS(on) = 0.3 Ω @ -10 V; not AEC-Q101 qualified; TJ max = +175 °C | Requires heatsink; unsuitable for space-constrained automotive modules; limited to non-safety-critical industrial use | Select only if legacy TO-220 footprint is mandatory and AEC-Q101 compliance is not required. |
| DMT6009LPS-13 | PowerDI™ 5060 package; RDS(on) = 0.0055 Ω @ -10 V; AEC-Q101 qualified; TJ max = +175 °C | Smaller 5.0 mm × 6.0 mm footprint; higher RDS(on) increases conduction loss by ~25 % at 60 A | Prefer when board area is constrained and 0.0055 Ω RDS(on) remains within thermal budget. |
Compared with IRF9530NPBF and DMT6009LPS-13, SQJ407EP-T1_BE3 offers the lowest RDS(on) in a surface-mount automotive-qualified package, enabling higher current density and eliminating heatsink dependency in BCM and roof module designs.
Availability
SQJ407EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, power distribution units, and motor control modules requiring stable component supply, AEC-Q101 compliance, and high-temperature operation.
Supply support for SQJ407EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ407EP-T1_BE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-current, high-temperature power switching in ASIL-B compliant vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ407EP-T1_BE3 at 125 °C case temperature?
The SQJ407EP-T1_BE3 supports -56 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures safe operation in under-hood environments where case temperatures routinely exceed 100 °C. The SQJ407EP-T1_BE3 maintains full functionality across its -55 °C to +175 °C junction temperature range.
Does SQJ407EP-T1_BE3 require a gate driver IC for automotive 12 V applications?
SQJ407EP-T1_BE3 can be driven directly by 3.3 V or 5 V microcontrollers due to its -1.5 V to -2.5 V gate threshold voltage, but a dedicated gate driver is recommended for high-frequency PWM (>10 kHz) or high-current switching (>30 A) to manage its 169 nC total gate charge efficiently. The SQJ407EP-T1_BE3 gate resistance of 0.5–1.6 Ω also necessitates controlled slew rate to prevent oscillation.
How does the body diode performance of SQJ407EP-T1_BE3 compare to standard automotive MOSFETs?
The SQJ407EP-T1_BE3 body diode has a typical reverse recovery time (trr) of 39 ns and reverse recovery charge (Qrr) of 45 nC - significantly faster than legacy automotive P-channel MOSFETs (typically >100 ns trr). This reduces freewheeling losses in H-bridge motor drivers and improves efficiency in bidirectional power paths. The SQJ407EP-T1_BE3 body diode forward voltage is -0.75 V at -10 A, supporting low-loss conduction.
Is SQJ407EP-T1_BE3 compatible with lead-free reflow soldering profiles?
Yes, SQJ407EP-T1_BE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, per Vishay document 73257. The PowerPAK® SO-8L package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life before assembly. Manual soldering with an iron is not recommended due to the leadless construction of the SQJ407EP-T1_BE3.
What thermal resistance values define the cooling performance of SQJ407EP-T1_BE3 on a standard PCB?
The SQJ407EP-T1_BE3 exhibits RthJA = 68 °C/W (junction-to-ambient, mounted on 1" FR4 PCB) and RthJC = 2.2 °C/W (junction-to-case). These values confirm that >96 % of heat flows through the exposed drain pad into the PCB, making thermal via placement beneath the pad critical. The SQJ407EP-T1_BE3 thermal design requires ≥2 oz copper on both layers and ≥6 thermal vias (0.3 mm diameter) under the drain pad for optimal 68 W power handling.
SQJ407EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 260 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ407EP-T1_BE3 FAQ
1.How can I place an order for SQJ407EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ407EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ407EP-T1_BE3 reliable?
The price and inventory of SQJ407EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ407EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ407EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ407EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ407EP-T1_BE3?
SQJ407EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ407EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ407EP-T1_BE3?
For technical support, including SQJ407EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ407EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ407EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ407EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ407EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ407EP-T1_BE3?
All SQJ407EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ407EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ407EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ407EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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