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Vishay Siliconix SQJ410EP-T1_GE3
- Part No.:
- SQJ410EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ410EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 30V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,546
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Product details
Overview
SQJ410EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V (D–S), 32 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 3.9 mΩ at VGS = 10 V and 4.2 mΩ at VGS = 4.5 V, and is qualified to AEC-Q101 for under-hood power switching in DC-DC converters and motor control modules.
For engineers reviewing the SQJ410EP-T1_GE3 datasheet, SQJ410EP-T1_GE3 pinout, SQJ410EP-T1_GE3 application, or SQJ410EP-T1_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS testing, PowerPAK® SO-8L package thermal performance (RthJC = 1.8 °C/W), and AEC-Q101 qualification for automotive reliability.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with high avalanche ruggedness (EAS = 168 mJ). Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining low leakage (IDSS ≤ 150 μA at TJ = 175 °C).
The device features optimized dynamic parameters: Qg = 73.5–110 nC, Qgd = 8.2 nC, and Crss = 325–410 pF - supporting efficient high-frequency switching in synchronous rectification and BLDC gate drive stages. Its PowerPAK® SO-8L package integrates three source terminals and a thermally enhanced exposed-drain paddle for low-inductance, high-current PCB mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V - supports 24 V automotive systems with margin for load dump transients |
| RDS(on) @ VGS = 10 V | 3.9 mΩ - enables <1 W conduction loss at 16 A, critical for high-efficiency DC-DC stages |
| RDS(on) @ VGS = 4.5 V | 4.2 mΩ - ensures full enhancement with 5 V microcontroller GPIO or gate driver outputs |
| ID Continuous (TC = 25 °C) | 32 A - sustains peak motor phase currents without derating in compact heatsinkless layouts |
| RthJC | 1.8 °C/W - allows direct thermal coupling to PCB copper or heatsink for >80 W power dissipation |
| EAS | 168 mJ - withstands repetitive inductive switching events in motor commutation without failure |
| AEC-Q101 Qualified | Yes - validated for automotive use including temperature cycling, HTRB, and UHAST per AEC standard |
Pinout & Package
Package: PowerPAK® SO-8L (single), surface-mount, lead (Pb)-free and halogen-free, with exposed drain paddle for thermal and electrical connection. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; low input capacitance (Ciss = 4965–6210 pF) minimizes driver power demand |
| 2 (S) | Source | Power return path; three parallel source pins reduce loop inductance and improve current sharing |
| 3 (S) | Source | Redundant source connection for lower parasitic resistance and improved thermal spreading |
| 4 (S) | Source | Third source terminal enabling Kelvin sensing or split-source routing in high-precision current monitoring |
| 5 (D) | Drain | High-current output node; connected to exposed copper paddle for low RthJC (1.8 °C/W) and high PD capability |
| 6 (G) | Gate | Second gate pin - not used; internal tie to Pin 1 per datasheet; must be left unconnected or tied to Pin 1 |
| 7 (D) | Drain | Secondary drain connection - internal tie to Pin 5 and exposed paddle; enhances current handling and thermal transfer |
| 8 (D) | Drain | Third drain terminal - electrically and thermally bonded to exposed paddle; critical for 83 W max power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Process | Enables ultra-low RDS(on) with high cell density and reduced gate charge - improves efficiency in 100–500 kHz switching applications |
| AEC-Q101 Qualification | Validated for automotive environments including -55 °C to +175 °C operation, vibration, and humidity exposure |
| 100 % Rg and UIS Tested | Ensures gate robustness against transient overvoltage and single-pulse avalanche energy tolerance up to 168 mJ |
| PowerPAK® SO-8L Package | Three-source / three-drain configuration reduces package inductance and improves thermal resistance vs. standard SO-8 |
| Low VGS(th) Spread | 1.5–2.5 V threshold enables reliable turn-on across temperature and process variation using 3.3 V or 5 V logic |
Applications
| Automotive DC-DC Converters | BLDC Motor Phase Switching |
|---|---|
Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild hybrid systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200 kHz with 4.5 V gate drive. Use Value: 4.2 mΩ RDS(on) at 4.5 V minimizes conduction loss during light-load conditions where gate drive voltage drops. |
Use Scenario: Inverter leg switch in 3-phase 400 W e-bike motor controller. IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (tf = 9–14 ns) to reduce cross-conduction losses. Use Value: 8.2 nC Qgd and 1.8 °C/W RthJC enable high PWM frequency operation with minimal thermal rise on double-sided FR-4 PCB. |
| Automotive LED Headlamp Drivers | Start-Stop Battery Management |
Use Scenario: Constant-current dimming stage for adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled high-current switch regulating up to 30 A through LED strings. Use Value: 168 mJ EAS rating prevents failure during inductive kickback from long LED harnesses during rapid PWM transitions. |
Use Scenario: Load dump protection and battery isolation in intelligent battery sensors (IBS). IC Role / Device Role / Timing Role: Reverse polarity and overvoltage protection switch placed between alternator and ECU rail. Use Value: AEC-Q101 qualification and 30 V VDS rating ensure survivability during ISO 7637-2 pulse 5a (load dump up to 35 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.5 mΩ @ 10 V; SO-8 package; no AEC-Q101 qualification; RthJC = 2.5 °C/W | Limited to industrial/commercial use; unsuitable for automotive under-hood deployment | Select only for cost-sensitive non-automotive 24 V systems where AEC-Q101 is not mandated |
| STL220N3LLH6 | RDS(on) = 2.2 mΩ @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; RthJC = 1.5 °C/W | Better RDS(on) and thermal performance but requires different footprint and layout; no 4.5 V RDS(on) spec published | Prefer when higher efficiency at 10 V gate drive is prioritized and PCB redesign is acceptable |
Compared with IRF7470PBF and STL220N3LLH6, the SQJ410EP-T1_GE3 uniquely balances AEC-Q101 compliance, 4.5 V drive capability, and proven 175 °C operation - making it optimal for space-constrained automotive power stages where gate drive voltage headroom is limited and qualification is mandatory.
Availability
SQJ410EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor controllers, and LED headlamp drivers requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for SQJ410EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ410EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine control units, body electronics, and electrified powertrain subsystems.
FAQ
What is the maximum junction temperature rating for SQJ410EP-T1_GE3?
The SQJ410EP-T1_GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress testing. This enables deployment in under-hood locations such as transmission control modules and engine management systems where ambient temperatures exceed 125 °C. The SQJ410EP-T1_GE3 maintains specified RDS(on) and switching parameters across this full range, with derating applied only above TC = 125 °C per absolute maximum ratings.
Is SQJ410EP-T1_GE3 suitable for 4.5 V gate drive applications?
Yes, the SQJ410EP-T1_GE3 is explicitly characterized for 4.5 V operation: RDS(on) = 4.2 mΩ (max) at ID = 8.7 A and VGS = 4.5 V. Its VGS(th) range of 1.5–2.5 V ensures reliable turn-on with 3.3 V or 5 V logic-level drivers, and its low Qgd (8.2 nC) minimizes Miller-induced shoot-through risk in half-bridge configurations using SQJ410EP-T1_GE3.
Does SQJ410EP-T1_GE3 have avalanche energy rating?
Yes, the SQJ410EP-T1_GE3 is rated for single-pulse avalanche energy (EAS) of 168 mJ with L = 0.1 mH, and single-pulse avalanche current (IAS) of 58 A. These values are 100 % tested per datasheet, confirming ruggedness in inductive switching applications such as motor phase control and solenoid drivers where voltage spikes occur during turn-off.
What is the thermal resistance from junction to case (RthJC) for SQJ410EP-T1_GE3?
The SQJ410EP-T1_GE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 1.8 °C/W, measured from junction to the exposed drain paddle. This value is confirmed in the datasheet's Thermal Resistance Ratings table and enables effective heat transfer to PCB copper or external heatsinks - supporting up to 83 W power dissipation at TC = 25 °C. The SQJ410EP-T1_GE3 achieves this via its PowerPAK® SO-8L package's large copper paddle area and low-resistance internal bonding.
Is SQJ410EP-T1_GE3 pin-compatible with standard SO-8 MOSFETs?
No, the SQJ410EP-T1_GE3 uses the PowerPAK® SO-8L package, which has identical outline dimensions to SO-8 but differs internally: Pins 2, 3, and 4 are all source terminals; Pins 5, 7, and 8 are all drain terminals; Pin 6 is a no-connect tied internally to Pin 1. Standard SO-8 footprints will not accommodate SQJ410EP-T1_GE3 without PCB redesign to match the recommended pad pattern in Vishay document 63818.
SQJ410EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6210 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ410EP-T1_GE3 FAQ
1.How can I place an order for SQJ410EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ410EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ410EP-T1_GE3 reliable?
The price and inventory of SQJ410EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ410EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ410EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ410EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ410EP-T1_GE3?
SQJ410EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ410EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ410EP-T1_GE3?
For technical support, including SQJ410EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ410EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ410EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ410EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ410EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ410EP-T1_GE3?
All SQJ410EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ410EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ410EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ410EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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