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Vishay Siliconix SQJ412EP-T1_GE3
- Part No.:
- SQJ412EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ412EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:28,796
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Product details
Overview
SQJ412EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 32 A continuous drain current at 25 °C and 125 °C, and 0.0041 Ω RDS(on) at VGS = 10 V - deployed in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ412EP-T1_GE3 datasheet, SQJ412EP-T1_GE3 pinout, SQJ412EP-T1_GE3 application, or SQJ412EP-T1_GE3 equivalent, this device is selected for its AEC-Q101 qualification, 175 °C junction rating, and low gate charge (80 nC typical) enabling fast switching in 12 V/24 V automotive power rails.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and high avalanche ruggedness (EAS = 140 mJ). Its gate threshold voltage (1.5–2.5 V) supports direct drive from 3.3 V and 5 V microcontrollers without level-shifting.
The PowerPAK® SO-8L package delivers 1.8 °C/W junction-to-case thermal resistance and enables PCB-side thermal spreading via exposed drain pad - critical for sustained 32 A conduction in space-constrained under-hood modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum blocking voltage compatible with 24 V nominal automotive systems including load-dump transients. |
| RDS(on) @ VGS = 10 V | 0.0041 Ω - enables <1.3 W conduction loss at 18 A, reducing heatsink requirements in compact power stages. |
| ID Continuous | 32 A @ TC = 25 °C and 125 °C - supports high-current switching without derating across full automotive temperature range. |
| Qg Total Gate Charge | 80 nC typical - allows efficient 100–200 kHz PWM operation with moderate gate driver strength (e.g., TC4427). |
| TJ Operating Range | −55 °C to +175 °C - qualified for under-hood placement in engine control units and transmission control modules. |
| AEC-Q101 Qualified | Yes - validated for automotive electronics per stress test requirements including HTRB, H3TRB, and UIS. |
| RthJC | 1.8 °C/W - enables direct thermal coupling to heatsink or copper pour, supporting >25 W power dissipation with minimal ΔT. |
Pinout & Package
Package: PowerPAK® SO-8L (single-channel), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; 0.72 Ω typical gate resistance limits ringing during fast switching. |
| 2 (S) | Source | Power return path; tied to system ground or low-side shunt; forms common reference for gate drive. |
| 3 (S) | Source | Second source connection - paralleled internally with Pin 2 to reduce source inductance and improve current sharing. |
| 4 (S) | Source | Third source connection - further lowers package source inductance for high di/dt applications like BLDC commutation. |
| 5 (D) | Drain | Main power output; electrically and thermally connected to exposed copper pad on bottom of package. |
| 6 (D) | Drain | Second drain connection - internal parallel path to Pin 5, enhancing current capacity and thermal spreading. |
| 7 (D) | Drain | Third drain connection - completes low-inductance, high-current drain path to PCB copper pour or heatsink. |
| 8 (G) | Gate | Redundant gate terminal - improves gate drive integrity and reduces EMI susceptibility in noisy automotive environments. |
Key Features
| Feature | Design Value |
|---|---|
| 100 % Rg and UIS tested | Each unit verified for gate resistance consistency and unclamped inductive switching robustness - ensures reliability in motor flyback and solenoid driving. |
| TrenchFET® architecture | Enables 0.0052 Ω RDS(on) at 4.5 V gate drive - supports direct logic-level control from automotive MCUs without external level shifters. |
| Exposed drain thermal pad | Provides 1.8 °C/W junction-to-case path - allows >25 W continuous power dissipation when mounted on 1"² FR-4 with 2 oz copper. |
| Low Crss (270–330 pF) | Minimizes Miller effect during switching - reduces gate drive power and improves dv/dt immunity in high-noise engine bays. |
| 175 °C maximum junction temperature | Permits operation in high-ambient zones (e.g., near exhaust manifolds or turbochargers) without thermal shutdown. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 1–5 ms pulse widths and 200 Hz max frequency. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization; handles repetitive 32 A peak currents with minimal voltage drop. Use Value: 0.0041 Ω RDS(on) limits on-state loss to <4.2 W at 32 A, enabling compact layout without forced air cooling. |
Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter powering ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: High-frequency (200 kHz) power switch with low Qg and fast turn-on/off times (td(on) = 45 ns, tf = 55 ns). Use Value: 80 nC total gate charge and 0.72 Ω gate resistance enable clean, low-loss switching with standard gate drivers. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Automotive Load Switch / Smart Fuse |
Use Scenario: Half-bridge phase leg in 3-phase BLDC motor driving EPS assist mechanism, operating up to 10 kHz PWM. IC Role / Device Role / Timing Role: High-current, low-RDS(on) N-channel switch in inverter topology; paired with complementary P-channel or N-channel high-side driver. Use Value: Triple-source and triple-drain terminals minimize parasitic inductance, preserving switching fidelity at high di/dt (>10 A/ns). |
Use Scenario: Solid-state replacement for mechanical fuses and relays in battery disconnect, HVAC blower, or lighting circuits. IC Role / Device Role / Timing Role: Protected load switch with integrated avalanche energy handling (EAS = 140 mJ) for inductive load turn-off. Use Value: Withstands 53 A single-pulse avalanche current and 128 A pulsed drain current - eliminates need for external TVS or snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 0.020 Ω @ 10 V; TO-220 package; no AEC-Q101 qualification; higher thermal resistance (RthJC = 1.25 °C/W but larger footprint). | Not suitable for space-constrained automotive modules; requires heatsink mounting; limited to under-dash or non-critical systems. | Select only for cost-sensitive industrial replacements where AEC-Q101 and 175 °C operation are not required. |
| STL220N4F7AG | RDS(on) = 0.0029 Ω @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; lower gate charge (65 nC); but max VDS = 40 V same. | Better efficiency at high current, but smaller thermal pad area limits sustained power vs. PowerPAK SO-8L's 3-drain layout. | Prefer for ultra-high-efficiency 48 V mild-hybrid subsystems where board space is tighter than thermal budget. |
Compared with IRF1404ZPBF and STL220N4F7AG, the SQJ412EP-T1_GE3 balances low RDS(on), proven automotive ruggedness, and superior thermal delivery via its triple-drain PowerPAK SO-8L - making it optimal for high-reliability, high-current 12 V/24 V power stages where layout density and thermal margin are both critical.
Availability
SQJ412EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and 12 V DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for SQJ412EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ412EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine management, transmission, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ412EP-T1_GE3 at 125 °C case temperature?
The SQJ412EP-T1_GE3 maintains a continuous drain current rating of 32 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification - enabling uninterrupted operation in hot under-hood locations without current derating.
Is SQJ412EP-T1_GE3 suitable for 4.5 V gate drive applications?
Yes, the SQJ412EP-T1_GE3 delivers 0.0052 Ω RDS(on) at VGS = 4.5 V and ID = 8.7 A, making it fully compatible with 4.5 V logic-level microcontrollers and gate drivers used in modern automotive ECUs. Its 1.5–2.5 V gate threshold ensures reliable turn-on without overdrive.
Does SQJ412EP-T1_GE3 have avalanche capability, and what is its rated single-pulse energy?
Yes, the SQJ412EP-T1_GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 140 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This enables safe operation in inductive load switching such as fuel injectors and solenoids without external protection components.
What is the thermal resistance from junction to case (RthJC) for SQJ412EP-T1_GE3, and how does it impact heatsinking?
The SQJ412EP-T1_GE3 has a junction-to-case thermal resistance of 1.8 °C/W, measured to the exposed drain pad. This low value allows efficient heat transfer to a PCB copper pour or external heatsink - supporting >25 W continuous power dissipation when properly mounted on 1"² FR-4 with 2 oz copper.
How many source and drain terminals does SQJ412EP-T1_GE3 have, and why is this configuration used?
The SQJ412EP-T1_GE3 features three source pins (Pins 2, 3, 4) and three drain pins (Pins 5, 6, 7) in its PowerPAK® SO-8L package. This multi-terminal layout minimizes package source and drain inductance - critical for high-di/dt applications like BLDC motor drives and reducing switching losses and voltage overshoot.
SQJ412EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5950 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ412EP-T1_GE3 FAQ
1.How can I place an order for SQJ412EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ412EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ412EP-T1_GE3 reliable?
The price and inventory of SQJ412EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ412EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ412EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ412EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ412EP-T1_GE3?
SQJ412EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ412EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ412EP-T1_GE3?
For technical support, including SQJ412EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ412EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ412EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ412EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ412EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ412EP-T1_GE3?
All SQJ412EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ412EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ412EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ412EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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