My Inquiry
My Account
Vishay Siliconix SQJ412EP-T2_GE3
- Part No.:
- SQJ412EP-T2_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ412EP-T2_GE3.pdf
- Description:
- MOSFET N-CH 40V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,412
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ412EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 32 A continuous drain current at TC = 25 °C, and RDS(on) of 4.1 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, targeting high-efficiency DC-DC converters and motor control in engine bay environments.
For engineers reviewing the SQJ412EP-T2_GE3 datasheet, SQJ412EP-T2_GE3 pinout, SQJ412EP-T2_GE3 application, or SQJ412EP-T2_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % UIS testing, PowerPAK® SO-8L package thermal performance, and validated operation under automotive transient conditions.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust turn-on with standard logic-level drivers, while total gate charge (80–120 nC) supports efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a body diode with forward voltage of 0.8–1.1 V at 10 A and exhibits single-pulse avalanche energy rating of 140 mJ. Thermal design leverages a low RthJC of 1.8 °C/W and RthJA of 65 °C/W on 1"² FR-4 PCB - critical for sustained high-current operation in space-constrained modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 4.1 mΩ - Enables <1 W conduction loss at 16 A DC, reducing heatsink requirements in compact power stages. |
| RDS(on) @ VGS = 4.5 V | 5.2 mΩ - Ensures reliable enhancement-mode operation with 3.3 V or 5 V microcontroller GPIOs without level-shifting. |
| ID (continuous) | 32 A at TC = 25 °C - Supports high-current motor phase switches or synchronous rectifiers in 300–500 W power supplies. |
| Qg (total) | 80–120 nC - Determines gate driver power demand and switching transition time; enables <100 ns turn-off with 6 Ω source impedance. |
| TJ range | −55 to +175 °C - Validated for under-hood placement in engine control units and transmission control modules. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including temperature cycling, HTRB, and UIS. |
Pinout & Package
Package: PowerPAK® SO-8L (single-channel), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A). Exposed copper drain pad on bottom side provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Source (S) | Seven parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 6 | Gate (G) | Single gate input with 0.36–1.08 Ω internal gate resistance - limits ringing and simplifies external gate resistor selection. |
| Drain (exposed pad) | Drain (D) | Thermally enhanced copper drain pad occupies full bottom footprint - requires soldered thermal land for RthJC = 1.8 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching + conduction losses in high-frequency SMPS. |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching stress to 53 A and 140 mJ - ensures robustness against inductive kickback in motor drives. |
| PowerPAK® SO-8L package | Reduces RthJA by ~30 % vs. standard SO-8; exposed drain pad enables direct thermal coupling to inner PCB copper layers. |
| AEC-Q101 qualification | Validated across temperature cycling, high-temp reverse bias, and accelerated life testing - required for ASIL-B system components. |
| Low VGS(th) variation | 1.5–2.5 V range ensures consistent turn-on across temperature and process corners, minimizing shoot-through risk in half-bridge designs. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 25 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization and flyback recovery via integrated body diode. Use Value: 4.1 mΩ RDS(on) limits resistive heating during extended duty cycles; 175 °C rating allows placement near engine compartment heat sources. |
Use Scenario: PWM-controlled 24 V blower motor delivering variable airflow in climate control systems. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter supplying motor driver IC, or low-side switch in H-bridge motor interface. Use Value: 5.2 mΩ RDS(on) at 4.5 V gate drive enables direct MCU control; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime. |
| 12 V/48 V Mild Hybrid DC-DC Converter | Electric Power Steering (EPS) Phase Leg Switch |
Use Scenario: High-efficiency bidirectional buck-boost stage interfacing 12 V starter battery and 48 V Li-ion auxiliary bus. IC Role / Device Role / Timing Role: Primary synchronous rectifier in high-side or low-side position, operating at 200–500 kHz switching frequency. Use Value: 80–120 nC Qg enables low gate drive loss; 140 mJ EAS rating withstands fault-induced inductive energy during bus short-circuit events. |
Use Scenario: Three-phase inverter driving brushless DC motor in torque-assist steering systems with peak phase currents >30 A. IC Role / Device Role / Timing Role: Low-side switch in each phase leg, commutated with precise timing to minimize torque ripple and acoustic noise. Use Value: Seven-source-pin layout reduces common-source inductance, improving switching edge fidelity and reducing EMI generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.5 mΩ @ 10 V; TO-252 package; no AEC-Q101 qualification; higher RthJA (90 °C/W). | Targeted at industrial power supplies, not automotive under-hood use. | Select when AEC-Q101 is not required and board-level thermal management permits larger footprint. |
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; lower Qg (65 nC) but higher VGS(th) (2.5–3.5 V). | Better suited for high-frequency, low-duty-cycle applications where gate drive margin is constrained. | Prefer when optimizing for ultra-low switching loss and gate drive voltage exceeds 4.5 V consistently. |
Compared with IRF7470PBF and STL220N4F7AG, the SQJ412EP-T2_GE3 offers balanced conduction-switching trade-off, proven automotive qualification, and superior thermal interface via PowerPAK® SO-8L's exposed drain - making it optimal for space-limited, thermally demanding engine bay modules.
Availability
SQJ412EP-T2_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQJ412EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ412EP-T2_GE3 belongs to Vishay's automotive-qualified TrenchFET® Power MOSFET family, engineered specifically for high-reliability, high-temperature switching in engine control, electrified chassis, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ412EP-T2_GE3 at 125 °C case temperature?
The SQJ412EP-T2_GE3 maintains a continuous drain current rating of 32 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling sustained high-current operation without derating in thermally managed automotive modules.
Does SQJ412EP-T2_GE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SQJ412EP-T2_GE3 has a gate threshold voltage range of 1.5–2.5 V and delivers RDS(on) = 5.2 mΩ at VGS = 4.5 V. While full enhancement occurs at ≥4.5 V, it conducts usable current at 3.3 V - however, for reliable saturation and minimal conduction loss, a 5 V gate driver or level shifter is recommended in production designs using SQJ412EP-T2_GE3.
Is the PowerPAK® SO-8L package of SQJ412EP-T2_GE3 compatible with standard SO-8 reflow profiles?
Yes, SQJ412EP-T2_GE3 follows JEDEC J-STD-020 moisture sensitivity level 1 and is rated for peak reflow temperatures up to 260 °C. Its PowerPAK® SO-8L footprint is mechanically distinct from standard SO-8 but uses identical thermal profile parameters - verified per Vishay document 73257 - ensuring compatibility with standard SMT assembly lines handling SQJ412EP-T2_GE3.
What is the significance of 100 % UIS testing for SQJ412EP-T2_GE3?
100 % unclamped inductive switching (UIS) testing means every SQJ412EP-T2_GE3 unit is individually stressed with 53 A single-pulse avalanche current and 140 mJ energy. This validates ruggedness against inductive load turn-off transients - essential for SQJ412EP-T2_GE3 deployment in fuel injector drivers, solenoid controls, and motor phases where flyback voltage spikes are unavoidable.
How does the seven-source-pin configuration of SQJ412EP-T2_GE3 improve circuit performance?
The seven-source terminals in SQJ412EP-T2_GE3 reduce common-source inductance by distributing return current across multiple parallel paths. This minimizes voltage overshoot during fast turn-off, improves gate control stability in high-di/dt applications like motor drives, and lowers EMI emissions - directly enhancing system-level reliability when using SQJ412EP-T2_GE3 in compact, high-power-density layouts.
SQJ412EP-T2_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5950 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ412EP-T2_GE3 FAQ
1.How can I place an order for SQJ412EP-T2_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ412EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ412EP-T2_GE3 reliable?
The price and inventory of SQJ412EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ412EP-T2_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ412EP-T2_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ412EP-T2_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ412EP-T2_GE3?
SQJ412EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ412EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ412EP-T2_GE3?
For technical support, including SQJ412EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ412EP-T2_GE3 requirements.
6.How does Aetrix verify that SQJ412EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ412EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ412EP-T2_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ412EP-T2_GE3?
All SQJ412EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ412EP-T2_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ412EP-T2_GE3 part is unused and in its original packaging.
Return procedure for SQJ412EP-T2_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ412EP-T2_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
