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Vishay Siliconix SQJ414EP-T1_BE3
- Part No.:
- SQJ414EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ414EP-T1_BE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:17,929
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Product details
Overview
SQJ414EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V (D–S), 30 A continuous drain current at 25 °C, and 175 °C maximum junction temperature, with RDS(on) = 12.0 mΩ at VGS = 10 V and 17.0 mΩ at VGS = 4.5 V - deployed in high-efficiency DC–DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ414EP-T1_BE3 datasheet, SQJ414EP-T1_BE3 pinout, SQJ414EP-T1_BE3 application, or SQJ414EP-T1_BE3 equivalent, this page delivers verified package dimensions, thermal resistance values (RthJC = 3.3 °C/W), avalanche energy rating (EAS = 24.2 mJ), AEC-Q101 qualification status, and gate charge profile (Qg = 15–25 nC) to support robust automotive power stage design.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its PowerPAK® SO-8L leadless package enables high power density with bottom-side thermal pad contact and supports high-current pulsed operation (IDM = 90 A) under strict duty cycle constraints (≤2 %, ≤300 μs).
The device integrates a robust body diode with trr = 22–50 ns and Qrr = 18–40 nC, and features 100 % Rg and UIS testing per AEC-Q101. Gate threshold voltage is tightly distributed (1.5–2.5 V), ensuring stable turn-on behavior across temperature (−55 to +175 °C) and supply variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients |
| RDS(on) @ VGS = 10 V | 12.0 mΩ - Enables <1.4 W conduction loss at 30 A, critical for thermally constrained ECUs |
| RDS(on) @ VGS = 4.5 V | 17.0 mΩ - Ensures reliable switching with standard 3.3 V/5 V logic-level gate drivers |
| ID (continuous, TC = 25 °C) | 30 A - Supports high-current loads such as fuel injectors and radiator fan drivers |
| EAS | 24.2 mJ - Withstands single-pulse inductive energy without failure in motor drive flyback events |
| RthJC | 3.3 °C/W - Enables direct thermal coupling to heatsink or PCB copper, reducing junction temperature rise by >30 °C vs. RthJA |
| Qg | 15–25 nC - Low gate charge minimizes driver power loss and allows use of compact gate drivers |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), footprint-compatible with SO-8 but with enhanced thermal performance (RthJC = 3.3 °C/W). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H), with exposed drain paddle on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7 (D) | Drain | Three drain terminals connected to internal die drain metallization and bottom thermal pad for low-inductance, low-resistance path |
| 8 (G) | Gate | Single gate input with Rg = 0.7–2.3 Ω - enables precise gate drive timing and dV/dt control |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications per stress test requirements including HTOL, TC, UHAST, and mechanical shock |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent gate or avalanche weakness |
| TrenchFET® architecture | Delivers 17 % lower RDS(on) than planar equivalents at same die size, enabling smaller PCB area for same power handling |
| PowerPAK SO-8L package | Bottom-exposed drain paddle achieves 3× lower RthJC vs. standard SO-8, allowing 45 W power dissipation at TC = 25 °C |
| Body diode trr < 50 ns | Reduces reverse recovery losses in synchronous rectification and half-bridge configurations, improving efficiency by up to 1.2 % |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC–DC Converter |
|---|---|
Use Scenario: High-side switch for fuel injector driver in gasoline direct injection systems. IC Role / Device Role / Timing Role: N-channel MOSFET operating in saturated switch mode with 10–20 kHz PWM, controlled by dedicated gate driver IC. Use Value: 12.0 mΩ RDS(on) limits I²R loss to 10.8 W at 30 A peak, enabling compact heatsinking within ECU housing constraints. |
Use Scenario: Synchronous rectifier in 12 V to 5 V buck converter for ADAS camera module power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with gate driven by controller's complementary output, operating at 500 kHz. Use Value: Fast body diode (trr = 22–50 ns) and low Qrr (18–40 nC) minimize shoot-through risk and conduction loss during dead-time transitions. |
| Radiator Fan Motor Driver | Transmission Control Module (TCM) Solenoid Driver |
Use Scenario: Half-bridge high-current driver for brushless radiator fan motor in cooling system. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter stage, commutated at 1–5 kHz with overcurrent protection. Use Value: 90 A pulsed drain current (IDM) and 24.2 mJ avalanche energy ensure survival during motor stall and inductive kickback events. |
Use Scenario: High-side switch controlling hydraulic solenoid valves in automatic transmission valve body. IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET driven directly by microcontroller GPIO with external gate resistor. Use Value: 17.0 mΩ RDS(on) at VGS = 4.5 V ensures full enhancement using 5 V MCU outputs, eliminating need for level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 1.8 mΩ @ 10 V (lower), but rated only to 150 °C TJ; not AEC-Q101 qualified | Not approved for underhood automotive use; limited to industrial or cabin applications | Select only if ambient temperature stays below 105 °C and AEC-Q101 is not required |
| IRF7470PBF | RDS(on) = 20 mΩ @ 10 V (higher); SO-8 package with RthJC = 4.5 °C/W; AEC-Q101 qualified | Higher conduction loss and thermal resistance - requires larger PCB copper area for same power | Choose when legacy SO-8 footprint compatibility is mandatory and 8 mΩ higher RDS(on) is acceptable |
Compared with STL220N3LLH6 and IRF7470PBF, the SQJ414EP-T1_BE3 uniquely balances AEC-Q101 compliance, 175 °C operation, 12.0 mΩ conduction loss, and PowerPAK SO-8L thermal performance - making it the preferred choice for space-constrained, high-reliability automotive power stages where junction temperature exceeds 150 °C.
Availability
SQJ414EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, radiator fan drivers, transmission solenoid controllers, and ADAS power supplies requiring stable component supply across automotive production lifecycles.
Supply support for SQJ414EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ414EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability 12 V vehicle subsystems including powertrain, chassis, and safety-critical electronics.
FAQ
What is the maximum junction temperature rating for SQJ414EP-T1_BE3?
The SQJ414EP-T1_BE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 requirements. This rating enables deployment in underhood environments such as engine compartments and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified RDS(on) and switching parameters up to this limit, with derating applied above TC = 125 °C per the absolute maximum ratings table.
Is SQJ414EP-T1_BE3 qualified to AEC-Q101 standards?
Yes, SQJ414EP-T1_BE3 is fully AEC-Q101 qualified. It undergoes rigorous stress testing including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and mechanical shock - all documented in Vishay's qualification report for this part number. This certification confirms suitability for automotive safety-critical and mission-critical power applications.
What is the gate threshold voltage range for SQJ414EP-T1_BE3?
The gate threshold voltage (VGS(th)) for SQJ414EP-T1_BE3 is specified as 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at VDS = VGS and ID = 250 μA. This tight distribution ensures consistent turn-on behavior across production lots and temperature extremes (−55 to +175 °C), supporting reliable operation with 3.3 V or 5 V gate drivers without external level shifting.
Does SQJ414EP-T1_BE3 include integrated avalanche ruggedness?
Yes, SQJ414EP-T1_BE3 is 100 % unclamped inductive switching (UIS) tested and rated for single-pulse avalanche energy (EAS) of 24.2 mJ at TJ = 25 °C. This capability is essential for automotive inductive loads like solenoids and motors, where voltage spikes from L·di/dt events must be safely absorbed without device failure - confirmed by Vishay's production screening and datasheet specifications.
What package type does SQJ414EP-T1_BE3 use, and how does it differ from standard SO-8?
SQJ414EP-T1_BE3 uses the PowerPAK® SO-8L package - a leadless variant of SO-8 with an exposed copper drain paddle on the bottom side. Unlike standard SO-8, it eliminates leads to reduce parasitic inductance and improves thermal performance (RthJC = 3.3 °C/W vs. ~4.5 °C/W for SO-8), while maintaining identical PCB footprint dimensions (5.13 mm × 6.15 mm). Soldering requires reflow per Vishay's profile (www.vishay.com/doc?73257).
SQJ414EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ414EP-T1_BE3 FAQ
1.How can I place an order for SQJ414EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ414EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ414EP-T1_BE3 reliable?
The price and inventory of SQJ414EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ414EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ414EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ414EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ414EP-T1_BE3?
SQJ414EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ414EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ414EP-T1_BE3?
For technical support, including SQJ414EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ414EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ414EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ414EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ414EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ414EP-T1_BE3?
All SQJ414EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ414EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ414EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ414EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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