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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ414EP-T1_GE3

Name: SQJ414EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ414EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ414EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ414EP-T1_GE3.pdf

Description:: MOSFET N-CH 30V 30A PPAK SO-8

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Product details

Overview

SQJ414EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V (D–S), 30 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features 12 mΩ R_DS(on) at V_GS = 10 V and 17 mΩ at V_GS = 4.5 V, housed in a leadless PowerPAK® SO-8L package - optimized for high-efficiency DC–DC converters and motor control stages in engine management systems.

For engineers reviewing the SQJ414EP-T1_GE3 datasheet, SQJ414EP-T1_GE3 pinout, SQJ414EP-T1_GE3 application, or SQJ414EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, low gate charge (15 nC typ.), and thermal resistance of 3.3 °C/W (junction-to-case), critical for thermally constrained under-hood power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (1:1 typ.), supporting efficient synchronous rectification and PWM-driven loads. Its body diode exhibits 22 ns typical reverse recovery time and 18 nC Q_rr, enabling reliable freewheeling in inductive circuits without external snubbers.

The device operates across -55 °C to +175 °C junction temperature range and is characterized for stable R_DS(on) performance up to 175 °C (0.0227 Ω max at V_GS = 10 V, I_D = 4.5 A), making it suitable for high-temperature automotive power rails where thermal derating must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operation in 24 V automotive systems with load-dump transients.
R_DS(on) @ V_GS = 10 V	0.0120 Ω - Enables ≤ 1.1 W conduction loss at 30 A, reducing heatsink requirements in compact power modules.
R_DS(on) @ V_GS = 4.5 V	0.0170 Ω - Ensures robust turn-on with standard 5 V logic-level gate drivers, eliminating need for level-shifting in MCU-based controls.
I_D (continuous, T_C = 25 °C)	30 A - Supports high-current solenoid drivers and BLDC phase switches without parallel devices.
Q_g (total gate charge)	15 nC typ. - Reduces gate drive power and switching losses in 100–500 kHz DC–DC topologies.
R_thJC	3.3 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks, enabling >35 W power dissipation at ΔT = 115 °C.
E_AS	24.2 mJ - Withstands single-pulse avalanche energy events common in inductive load switching, enhancing system robustness.

Pinout & Package

Package: PowerPAK® SO-8L - leadless, surface-mount, thermally enhanced package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.13 mm × 1.07 mm (L × W × H); RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)	Drain (D)	Multiple bottom-side copper pads tied to internal drain metallization - primary thermal path and high-current output node.
5	Gate (G)	Control input; requires <15 nC charge for full enhancement; sensitive to ESD (±20 V rating).
6	Source (S)	Power return path and gate reference; connects to PCB ground plane for low-inductance source routing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications per stress test requirements including HTOL, TC, UHAST, and mechanical shock - supports ASIL-B system integration.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from latent parametric drift or avalanche weakness.
TrenchFET® architecture	Delivers 17 % lower R_DS(on) vs. planar equivalents at same die size - enables smaller footprint without sacrificing efficiency in space-constrained ECUs.
Low Q_gd/Q_gs ratio	Typical 1:1 ratio minimizes Miller plateau duration - improves hard-switching immunity and reduces voltage overshoot during turn-off.
175 °C rated junction	Enables operation in engine bay environments without derating below 125 °C ambient - extends usable lifetime in high-temperature zones.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed, PWM-controlled 12–24 V fuel injector actuation with 2–5 ms pulse widths and 10–20 Hz repetition. IC Role / Device Role / Timing Role: Low-side switch handling peak currents up to 30 A; provides precise current regulation via R_DS(on)-based sensing and fast turn-off (<40 ns td(off)) to prevent coil saturation. Use Value: 0.012 Ω R_DS(on) limits resistive heating during extended duty cycles, while 24.2 mJ E_AS absorbs inductive kickback without clamping diodes.	Use Scenario: Variable-speed control of 200–500 W DC brushless blower motors in climate control systems using 3-phase inverter half-bridges. IC Role / Device Role / Timing Role: High-current, high-temperature phase leg switch; operates continuously at TJ ≥ 150 °C in dashboard-mounted modules. Use Value: Stable R_DS(on) up to 175 °C (0.0227 Ω max) ensures predictable conduction loss across full ambient range; 3.3 °C/W R_thJC enables direct thermal interface to metal-core PCB.
12 V/24 V DC–DC Converter Primary Switch	Transmission Solenoid Driver Module
Use Scenario: 300 kHz synchronous buck converter stepping 24 V battery to 5 V/3.3 V for ADAS sensor rails, requiring high efficiency and minimal EMI. IC Role / Device Role / Timing Role: Primary-side high-frequency switch; leverages low Q_g (15 nC) and fast tr/tf (5–10 ns) to minimize switching loss and dv/dt-induced noise. Use Value: C_iss = 850–1110 pF and Crss = 60–80 pF support clean zero-voltage switching transitions; 17 mΩ R_DS(on) at 4.5 V allows direct MCU GPIO drive.	Use Scenario: On/off and PWM control of hydraulic pressure solenoids (10–20 Ω coils) in automatic transmission valve bodies, exposed to under-hood temperatures up to 150 °C ambient. IC Role / Device Role / Timing Role: High-reliability, high-temperature power switch with integrated avalanche ruggedness for transient suppression during coil de-energization. Use Value: AEC-Q101 qualification and 100 % UIS testing ensure survival over 100,000+ actuation cycles; 175 °C rating prevents thermal shutdown during sustained engagement.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, PWM-controlled 12–24 V fuel injector actuation with 2–5 ms pulse widths and 10–20 Hz repetition.

IC Role / Device Role / Timing Role: Low-side switch handling peak currents up to 30 A; provides precise current regulation via R_DS(on)-based sensing and fast turn-off (<40 ns td(off)) to prevent coil saturation.

Use Value: 0.012 Ω R_DS(on) limits resistive heating during extended duty cycles, while 24.2 mJ E_AS absorbs inductive kickback without clamping diodes.

Use Scenario: Variable-speed control of 200–500 W DC brushless blower motors in climate control systems using 3-phase inverter half-bridges.

IC Role / Device Role / Timing Role: High-current, high-temperature phase leg switch; operates continuously at TJ ≥ 150 °C in dashboard-mounted modules.

Use Value: Stable R_DS(on) up to 175 °C (0.0227 Ω max) ensures predictable conduction loss across full ambient range; 3.3 °C/W R_thJC enables direct thermal interface to metal-core PCB.

12 V/24 V DC–DC Converter Primary Switch

Transmission Solenoid Driver Module

Use Scenario: 300 kHz synchronous buck converter stepping 24 V battery to 5 V/3.3 V for ADAS sensor rails, requiring high efficiency and minimal EMI.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch; leverages low Q_g (15 nC) and fast tr/tf (5–10 ns) to minimize switching loss and dv/dt-induced noise.

Use Value: C_iss = 850–1110 pF and Crss = 60–80 pF support clean zero-voltage switching transitions; 17 mΩ R_DS(on) at 4.5 V allows direct MCU GPIO drive.

Use Scenario: On/off and PWM control of hydraulic pressure solenoids (10–20 Ω coils) in automatic transmission valve bodies, exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: High-reliability, high-temperature power switch with integrated avalanche ruggedness for transient suppression during coil de-energization.

Use Value: AEC-Q101 qualification and 100 % UIS testing ensure survival over 100,000+ actuation cycles; 175 °C rating prevents thermal shutdown during sustained engagement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A (pulse), R_DS(on) = 1.2 mΩ @ 10 V; PowerFLAT 5×6 package; higher current but larger footprint and no AEC-Q101 documentation in public datasheet.	Targeted at industrial motor drives, not automotive-qualified; lacks documented 175 °C operation or UIS screening.	Select only if board space permits larger package and AEC-Q101 compliance is not required.
IRF7470PBF	30 V, 12 A, R_DS(on) = 13 mΩ @ 10 V; SO-8 package; non-automotive grade; R_thJA = 62 °C/W (higher thermal resistance).	Designed for consumer/commercial SMPS; not qualified for automotive temperature or reliability stress tests.	Acceptable for cost-sensitive non-automotive prototypes, but not for production ECU or powertrain use.

Compared with STL220N3LLH6 and IRF7470PBF, the SQJ414EP-T1_GE3 delivers verified AEC-Q101 compliance, guaranteed 175 °C operation, and lower thermal resistance (3.3 °C/W vs. >40 °C/W for SO-8), making it the only option qualified for under-hood deployment where reliability and thermal margin are non-negotiable.

Availability

SQJ414EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and high-temperature industrial motor control requiring stable component supply across multi-year production cycles.

Supply support for SQJ414EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQJ414EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-temperature switching in engine control, transmission, and chassis systems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

What is the maximum operating junction temperature for SQJ414EP-T1_GE3?

The SQJ414EP-T1_GE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress testing. This enables operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains T_J ≤ 175 °C under worst-case power dissipation. The device's R_DS(on) remains fully specified up to this limit.

Is SQJ414EP-T1_GE3 pin-compatible with standard SO-8 MOSFETs?

No - SQJ414EP-T1_GE3 uses the PowerPAK® SO-8L package, which is leadless and has a different pin layout and thermal pad configuration than through-hole or gull-wing SO-8. Its drain terminals occupy pins 1, 2, 3, 4, 7, and 8 on the bottom side, while gate and source are on pins 5 and 6 respectively. PCB layout must follow Vishay's recommended pad pattern (Doc. #63818) to ensure solder joint integrity and thermal performance.

Does SQJ414EP-T1_GE3 require a gate driver IC, or can it be driven directly by a microcontroller?

The SQJ414EP-T1_GE3 can be driven directly by a 5 V-tolerant microcontroller GPIO when operated at moderate switching frequencies (<50 kHz) and moderate load currents, thanks to its 4.5 V logic-level threshold and low total gate charge (15 nC typ.). However, for high-frequency (>100 kHz) or high-current (>15 A) applications, a dedicated gate driver is recommended to ensure fast, low-loss switching and prevent shoot-through in half-bridge configurations.

What does "100 % Rg and UIS tested" mean for SQJ414EP-T1_GE3?

"100 % R_g tested" means every SQJ414EP-T1_GE3 unit undergoes production screening for gate resistance to ensure consistent turn-on behavior and avoid parametric outliers. "100 % UIS tested" confirms each device passes unclamped inductive switching stress at rated current and voltage - verifying avalanche energy handling (24.2 mJ) and preventing field failure due to inductive load transients in automotive power circuits.

How does the body diode performance of SQJ414EP-T1_GE3 compare to standard MOSFETs in freewheeling applications?

The SQJ414EP-T1_GE3 body diode features a typical reverse recovery time (t_rr) of 22 ns and Q_rr of 18 nC - significantly faster and lower-charge than conventional planar MOSFETs. This reduces switching losses and EMI in synchronous rectifier and H-bridge freewheeling paths, especially in 24 V automotive DC–DC converters where diode conduction occurs during dead-time intervals.

SQJ414EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ414EP-T1_GE3 FAQ

1.How can I place an order for SQJ414EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ414EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ414EP-T1_GE3 reliable?

The price and inventory of SQJ414EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ414EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ414EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ414EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ414EP-T1_GE3?

SQJ414EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ414EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ414EP-T1_GE3?

For technical support, including SQJ414EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ414EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ414EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ414EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ414EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ414EP-T1_GE3?

All SQJ414EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ414EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ414EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ414EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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