My Inquiry
My Account
Vishay Siliconix SQJ415EP-T1_BE3
- Part No.:
- SQJ415EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ415EP-T1_BE3.pdf
- Description:
- P-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ415EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -40 V VDS, 0.014 Ω RDS(on) at VGS = -10 V, and -30 A continuous drain current at TC = 25 °C. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems, supporting AEC-Q101 qualification and 175 °C junction operation.
For engineers reviewing the SQJ415EP-T1_BE3 datasheet, SQJ415EP-T1_BE3 pinout, SQJ415EP-T1_BE3 application, or SQJ415EP-T1_BE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, robust UIS and Rg testing, thermal performance (RthJC = 3.3 °C/W), and compatibility with standard SO-8L PCB footprints for engine control unit (ECU) and body electronics designs.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® process to achieve optimized on-resistance and gate charge trade-offs. Its -2.0 V typical VGS(th) enables reliable turn-on with standard 3.3 V or 5 V logic-level controllers in high-side switching configurations.
The device features integrated body diode with 26 ns typical reverse recovery time (trr) and 21 nC Qrr, supporting synchronous rectification and inductive load commutation. Thermal design leverages low RthJC and validated FR4 PCB mounting per JEDEC JESD51-7.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V automotive battery systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.014 Ω - Enables ≤ 1.4 W conduction loss at -30 A, critical for thermally constrained ECU modules |
| RDS(on) @ VGS = -4.5 V | 0.020 Ω - Ensures functional switching with 5 V microcontroller GPIO without level-shifting |
| ID (continuous) | -30 A @ TC = 25 °C - Supports high-current loads such as fuel pumps, HVAC actuators, and lighting drivers |
| Qg | 63 nC typical - Balances fast switching (td(on) = 12 ns) with gate driver power efficiency |
| TJ range | -55 °C to +175 °C - Meets under-hood temperature requirements per AEC-Q101 stress test conditions |
| RthJC | 3.3 °C/W - Allows direct thermal coupling to heatsink or copper pour for >15 W power dissipation |
Pinout & Package
PowerPAK® SO-8L single-package with exposed drain pad on bottom side for enhanced thermal performance. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H). Lead (Pb)-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 internally tied to reduce source inductance in high-di/dt switching |
| 5 | Gate (G) | Control input; requires <20 V absolute max rating; low 4.6 Ω typical Rg supports stable gate drive |
| 6 | Drain (D) | Main power output; connected to large-area exposed copper pad on bottom for thermal and current path integrity |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine bay, transmission, and chassis control modules |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and unclamped inductive switching reliability |
| Low RDS(on) at -4.5 V | Enables direct interface with 5 V MCUs without external level shifters in high-side switch topologies |
| Exposed drain thermal pad | Reduces junction-to-case thermal resistance to 3.3 °C/W, enabling higher sustained power in compact layouts |
| Body diode trr = 26 ns | Minimizes switching losses during freewheeling in brushed DC motor and solenoid drive circuits |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as a controlled high-side power switch with fast turn-off (<110 ns td(off)) to prevent cross-conduction. Use Value: Low 0.014 Ω RDS(on) reduces heat generation in sealed ECU enclosures; 175 °C TJ rating ensures operation near hot engine surfaces. |
Use Scenario: Power management for door lock actuators, window lift motors, and interior lighting in BCMs. IC Role / Device Role / Timing Role: High-side load switch with integrated body diode for inductive kickback clamping during motor stop/start cycles. Use Value: 26 ns trr and 21 nC Qrr minimize energy loss during diode conduction; AEC-Q101 qualification guarantees field reliability. |
| Advanced Driver Assistance Systems (ADAS) Power Distribution | Electric Power Steering (EPS) Auxiliary Loads |
Use Scenario: Isolation and protection of radar sensor power rails and camera module supplies in ADAS domain controllers. IC Role / Device Role / Timing Role: Fault-tolerant high-side switch with overcurrent detection interface via sense-FET capability (not integrated but compatible with external sensing). Use Value: -40 V VDS withstands ISO 7637-2 pulse 5a load dump transients; 100 % UIS tested for survivability during system faults. |
Use Scenario: Controlled power delivery to EPS cooling fans, torque sensor bias supplies, and diagnostic circuitry. IC Role / Device Role / Timing Role: Thermally robust P-channel switch operating continuously at elevated ambient temperatures (>105 °C). Use Value: RthJC = 3.3 °C/W allows direct thermal coupling to metal-core PCBs; -55 °C to +175 °C TJ range covers full EPS operational envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, -100 V VDS, 0.3 Ω RDS(on) @ -10 V, no AEC-Q101 qualification | Higher voltage margin but 21× higher RDS(on); unsuitable for space-constrained automotive modules | Select only for non-automotive industrial use requiring higher VDS and through-hole assembly |
| DMT4005LPS-13 | PowerDI 5060 package, -40 V VDS, 0.0045 Ω RDS(on) @ -10 V, AEC-Q101 qualified, but 5.0 A ID rating | Lower RDS(on) but insufficient current capacity for 30 A loads; smaller footprint limits thermal mass | Prefer for low-power auxiliary rails where board space is critical and current ≤5 A |
Compared with IRF9530NPBF and DMT4005LPS-13, SQJ415EP-T1_BE3 uniquely balances 30 A current capability, 0.014 Ω on-resistance, AEC-Q101 compliance, and PowerPAK SO-8L thermal performance-making it optimal for mid-power automotive high-side switches where both current and thermal density matter.
Availability
SQJ415EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and ADAS power distribution requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQJ415EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJ415EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-current switching in harsh-temperature automotive environments.
FAQ
What is the maximum gate-source voltage rating for SQJ415EP-T1_BE3?
The SQJ415EP-T1_BE3 has a maximum gate-source voltage (VGS) rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should be designed to clamp VGS within -20 V to +20 V, especially during transient events like load dump or ESD.
Does SQJ415EP-T1_BE3 support 5 V logic-level gate drive?
Yes, SQJ415EP-T1_BE3 supports 5 V logic-level gate drive: its RDS(on) is specified at VGS = -4.5 V (0.0200 Ω typical), and its VGS(th) ranges from -1.5 V to -2.5 V. This ensures full enhancement and low on-resistance when driven by standard 5 V microcontrollers without level-shifting circuitry.
Is SQJ415EP-T1_BE3 qualified for automotive applications?
Yes, SQJ415EP-T1_BE3 is AEC-Q101 qualified and explicitly designated as an "Automotive P-Channel MOSFET" in its product summary. It undergoes rigorous stress testing-including 100 % Rg and UIS screening-and operates across -55 °C to +175 °C junction temperature, meeting requirements for under-hood and safety-critical automotive systems.
What is the thermal resistance from junction to case (RthJC) for SQJ415EP-T1_BE3?
The junction-to-case thermal resistance (RthJC) of SQJ415EP-T1_BE3 is 3.3 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to a heatsink or PCB copper pour, supporting up to 15 W continuous power dissipation at TC = 125 °C per the Absolute Maximum Ratings table.
Can SQJ415EP-T1_BE3 replace N-channel MOSFETs in high-side configurations?
No-SQJ415EP-T1_BE3 is a P-channel MOSFET and is inherently suited for high-side switching without requiring a floating gate driver, unlike N-channel devices. It cannot functionally replace an N-channel MOSFET in the same circuit without topology changes; however, it is the preferred solution for simplified high-side switch designs in automotive 12 V systems.
SQJ415EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ415EP-T1_BE3 FAQ
1.How can I place an order for SQJ415EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ415EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ415EP-T1_BE3 reliable?
The price and inventory of SQJ415EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ415EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ415EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ415EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ415EP-T1_BE3?
SQJ415EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ415EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ415EP-T1_BE3?
For technical support, including SQJ415EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ415EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ415EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ415EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ415EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ415EP-T1_BE3?
All SQJ415EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ415EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ415EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ415EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ415EP-T1_BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
