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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ416EP-T1_BE3

Name: SQJ416EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJ416EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ416EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ416EP-T1_BE3.pdf

Description:: N-CHANNEL 100-V (D-S) 175C MOSFE

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Product details

Overview

SQJ416EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V V_DS, 27 A continuous drain current at 25 °C, and 0.030 Ω R_DS(on) at V_GS = 10 V, housed in a PowerPAK® SO-8L leadless package. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQJ416EP-T1_BE3 datasheet, SQJ416EP-T1_BE3 pinout, SQJ416EP-T1_BE3 application, or SQJ416EP-T1_BE3 equivalent, key selection criteria include its 100 % R_g and UIS tested reliability, low 3.3 °C/W R_thJC, and validated performance across -55 °C to +175 °C ambient extremes in automotive power systems.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2.5–3.5 V) ensures robust turn-on margin with standard 10 V gate drivers, while the 10 nC typical total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a body diode with 0.87–1.2 V forward voltage at 10 A and is rated for 23 A single-pulse avalanche current (L = 0.1 mH), enabling reliable operation during inductive load switching transients without external protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; suitable for 48 V and 60 V nominal automotive bus systems.
R_DS(on) @ V_GS = 10 V, I_D = 10 A	0.030 Ω - Confirmed on-resistance at room temperature; enables ≤ 3 W conduction loss at 10 A.
I_D (continuous, T_C = 25 °C)	27 A - Maximum steady-state current with heatsink; derates to 15 A at 125 °C case temperature.
Junction Temp Range	-55 °C to +175 °C - Fully specified operation across full automotive temperature range per AEC-Q101.
R_thJC	3.3 °C/W - Low junction-to-case thermal resistance; allows direct thermal interface to PCB copper or heatsink for high-power density layouts.
Q_g (total)	10 nC typical - Enables fast, low-loss switching with moderate gate drive strength (e.g., 1–2 A peak).
E_AS	26 mJ - Rated single-pulse avalanche energy; supports robustness against inductive switching stress without snubbers.

Pinout & Package

Package: PowerPAK® SO-8L - leadless, surface-mount, dual-side thermal pad design with exposed copper drain terminals on bottom side. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H). Compliant with IPC-7351B SOIC-8 variant footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Bottom Drain Pads)	Drain (D)	Four parallel exposed copper pads forming primary drain connection and main thermal path to PCB; no plating on singulated edge.
5	Source (S)	Top-side source terminal; connects to internal source metallization and provides return path for load current.
6	Gate (G)	Control input; requires < ±20 V rating; 2.1 Ω typical gate resistance limits ringing and eases driver sizing.
7, 8	Source (S)	Additional top-side source terminals; paralleled with Pin 5 to reduce source inductance and improve switching stability.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UHAST; supports ASIL-B system-level compliance.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-no latent field failures.
PowerPAK SO-8L thermal performance	3.3 °C/W R_thJC enables >40 W power dissipation with minimal board area vs. SO-8; bottom-side drain pads maximize heat transfer.
TrenchFET® architecture	Optimized cell pitch and trench depth deliver 22% lower R_DS(on) × Q_g figure-of-merit than planar equivalents at 100 V.
Body diode V_SD	0.87 V typical at 10 A - Low forward drop reduces reverse recovery losses in synchronous rectification and freewheeling paths.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter High-Side Switch
Use Scenario: Driving solenoid-based fuel injectors in gasoline direct injection engines with PWM-controlled pulse widths down to 100 μs. IC Role / Device Role / Timing Role: High-current, high-speed N-channel switch controlling injector coil current; must withstand 100 V flyback spikes and operate continuously at 150 °C under hood. Use Value: 0.030 Ω R_DS(on) minimizes I²R heating during sustained 12 A pulses; 175 °C rating eliminates derating in confined ECU enclosures.	Use Scenario: High-side switching in bidirectional 48 V/12 V DC-DC converters used for regenerative braking energy transfer and start-stop support. IC Role / Device Role / Timing Role: Primary power switch in synchronous buck-boost topology; handles 25 A continuous current with < 20 ns fall time to minimize switching loss. Use Value: 10 nC Q_g and 20 ns t_f enable >200 kHz operation with < 1.5 W gate drive loss; R_thJC = 3.3 °C/W sustains efficiency at full load without forced air.
Electric Power Steering (EPS) Motor Phase Leg	Automotive Battery Disconnect Switch
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters, operating in harsh vibration and thermal cycling environments. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; commutates up to 30 A peak motor current with tight dead-time control. Use Value: 23 A I_AS and 26 mJ E_AS absorb motor regeneration spikes without clamping; AEC-Q101 qualification ensures zero infant mortality in safety-critical EPS.	Use Scenario: Main isolation switch between 12 V battery and vehicle loads, activated during sleep mode or fault conditions. IC Role / Device Role / Timing Role: Normally-open, high-reliability disconnect MOSFET; must sustain 100 V off-state and conduct 27 A continuously with < 10 mΩ on-resistance drift over lifetime. Use Value: 0.030 Ω R_DS(on) yields < 7.3 W loss at 27 A; 100 % UIS test guarantees survival during jump-start transients up to 16 V surge.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter High-Side Switch

Use Scenario: Driving solenoid-based fuel injectors in gasoline direct injection engines with PWM-controlled pulse widths down to 100 μs.

IC Role / Device Role / Timing Role: High-current, high-speed N-channel switch controlling injector coil current; must withstand 100 V flyback spikes and operate continuously at 150 °C under hood.

Use Value: 0.030 Ω R_DS(on) minimizes I²R heating during sustained 12 A pulses; 175 °C rating eliminates derating in confined ECU enclosures.

Use Scenario: High-side switching in bidirectional 48 V/12 V DC-DC converters used for regenerative braking energy transfer and start-stop support.

IC Role / Device Role / Timing Role: Primary power switch in synchronous buck-boost topology; handles 25 A continuous current with < 20 ns fall time to minimize switching loss.

Use Value: 10 nC Q_g and 20 ns t_f enable >200 kHz operation with < 1.5 W gate drive loss; R_thJC = 3.3 °C/W sustains efficiency at full load without forced air.

Electric Power Steering (EPS) Motor Phase Leg

Automotive Battery Disconnect Switch

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters, operating in harsh vibration and thermal cycling environments.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; commutates up to 30 A peak motor current with tight dead-time control.

Use Value: 23 A I_AS and 26 mJ E_AS absorb motor regeneration spikes without clamping; AEC-Q101 qualification ensures zero infant mortality in safety-critical EPS.

Use Scenario: Main isolation switch between 12 V battery and vehicle loads, activated during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: Normally-open, high-reliability disconnect MOSFET; must sustain 100 V off-state and conduct 27 A continuously with < 10 mΩ on-resistance drift over lifetime.

Use Value: 0.030 Ω R_DS(on) yields < 7.3 W loss at 27 A; 100 % UIS test guarantees survival during jump-start transients up to 16 V surge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A pulsed, R_DS(on) = 0.0028 Ω @ 10 V - 10× lower on-resistance but in larger PowerFLAT 5x6 package; higher Q_g (45 nC).	Better suited for high-current, low-frequency applications like starter relays; less optimal for high-frequency DC-DC due to gate drive demand.	Select when peak current > 100 A is required and board space allows larger footprint; not drop-in for SQJ416EP-T1_BE3 layout.
IRF1010NSPBF	100 V, 91 A, R_DS(on) = 0.012 Ω @ 10 V - legacy TO-220 package; no AEC-Q101 qualification; R_thJC = 1.2 °C/W but requires mechanical mounting.	Applicable only in non-automotive industrial designs; lacks automotive reliability screening and thermal performance in SMT form factor.	Use only for cost-sensitive, non-automotive prototypes; not recommended for production automotive systems requiring AEC-Q101 traceability.

Compared with STL220N10F7 and IRF1010NSPBF, SQJ416EP-T1_BE3 delivers optimal balance of automotive qualification, compact SMT footprint, and mid-range R_DS(on)/Q_g trade-off-making it ideal for space-constrained, thermally demanding 25–30 A automotive power stages where AEC-Q101 compliance is mandatory.

Availability

SQJ416EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and battery management systems requiring stable component supply across extended automotive product lifecycles.

Supply support for SQJ416EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ416EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in under-hood and chassis-mounted power electronics.

FAQ

What is the maximum continuous drain current rating for SQJ416EP-T1_BE3 at 125 °C case temperature?

The SQJ416EP-T1_BE3 is rated for 15 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its 3.3 °C/W R_thJC and 175 °C maximum junction temperature. At 25 °C case temperature, the rating increases to 27 A.

Is SQJ416EP-T1_BE3 qualified to AEC-Q101, and what does that mean for automotive use?

Yes, SQJ416EP-T1_BE3 is AEC-Q101 qualified, meaning it has passed accelerated stress tests-including temperature cycling, high-temperature reverse bias, and unclamped inductive switching-required for discrete semiconductors in automotive applications. This qualification validates its reliability for under-hood use up to 175 °C junction temperature and supports ASIL-B functional safety system integration.

What is the gate threshold voltage range for SQJ416EP-T1_BE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SQJ416EP-T1_BE3 is 2.5 V to 3.5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. For full enhancement and minimum R_DS(on), a V_GS ≥ 10 V is required, as confirmed by the 0.030 Ω specification at that condition.

Can SQJ416EP-T1_BE3 be used in synchronous rectification applications, and what body diode characteristics support this?

Yes, SQJ416EP-T1_BE3 supports synchronous rectification via its integrated body diode, which exhibits a typical forward voltage (V_SD) of 0.87 V at I_F = 10 A and V_GS = 0 V. Its low reverse recovery charge (Q_rr)-implied by fast 20–35 ns fall time and 24–40 pF Crss-is critical for minimizing switching loss and shoot-through risk in high-frequency DC-DC topologies.

What is the thermal resistance from junction to ambient (R_thJA) for SQJ416EP-T1_BE3, and how should it be applied in layout design?

The R_thJA for SQJ416EP-T1_BE3 is 70 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes standardized test conditions-not real-world layouts-so actual thermal performance depends heavily on PCB copper area, layer count, and thermal vias under the drain pads. Designers should prioritize maximizing bottom-side copper and using ≥ 8 thermal vias per drain pad to approach the 3.3 °C/W R_thJC limit.

SQJ416EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ416EP-T1_BE3 FAQ

1.How can I place an order for SQJ416EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ416EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ416EP-T1_BE3 reliable?

The price and inventory of SQJ416EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ416EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJ416EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ416EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ416EP-T1_BE3?

SQJ416EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ416EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ416EP-T1_BE3?

For technical support, including SQJ416EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ416EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJ416EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJ416EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ416EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJ416EP-T1_BE3?

All SQJ416EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ416EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ416EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJ416EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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